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1. 发明专利

JP2008100861A Sapphire single crystal substrate and group iii nitride-based compound semiconductor 审中-公开
标题翻译： SAPPHIRE单晶基板和III类氮化物化合物半导体
公开(公告)号：JP2008100861A
公开(公告)日：2008-05-01
申请号：JP2006282841
申请日：2006-10-17
申请人： Sumitomo Metal Mining Co Ltd , 住友金属鉱山株式会社
发明人： OYAMA HIROSHI , IINO TAKAYUKI
IPC分类号： C30B29/20 , C30B25/18 , C30B29/38 , H01L33/32
摘要： PROBLEM TO BE SOLVED: To provide a sapphire single crystal substrate on whose surface a group III nitride-based compound semiconductor having improved crystallinity can be stacked; and to provide the group III nitride-based compound semiconductor obtained by using the substrate. SOLUTION: The sapphire single crystal substrate is characterized in that the distribution of the variation of the lattice constant in the same plane of the sapphire crystal is within 0.002 Å. The group III nitride-based compound semiconductor is AlN, GaN or the like and expressed by general formula: Al x Ga y In 1-x-y N (wherein, 0≤x≤1, 0≤y≤1, and 0≤x+y≤1) and is used as a light-emitting element of an LED or the like. The group III nitride-based compound semiconductor is obtained by stacking on the sapphire single crystal substrate in which the distribution of the variation of the lattice constant in the same plane of the sapphire crystal is within 0.002 Å, and the obtained group III nitride-based compound semiconductor has uniform in-plane lattice constant and excellent crystallinity. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种蓝宝石单晶衬底，其表面上可以堆叠具有改善的结晶度的III族氮化物基化合物半导体; 并提供通过使用基板获得的III族氮化物基化合物半导体。蓝宝石单晶基板的特征在于，蓝宝石晶体的同一平面中的晶格常数的变化分布在0.002以内。 III族氮化物系化合物半导体是AlN，GaN等，并用通式表示：在 1-xy 中， N（其中，0≤x≤1,0≤y≤1，0≤x+y≤1），用作LED等的发光元件。通过在蓝宝石单晶衬底中层叠蓝宝石晶体的同一平面中的晶格常数的变化分布在0.002内的蓝宝石单晶衬底和所获得的III族氮化物基化合物半导体化合物半导体具有均匀的面内晶格常数和优异的结晶度。版权所有（C）2008，JPO＆INPIT

2. 发明专利

JP2008000971A Method and apparatus for producing sapphire single crystal block 审中-公开
标题翻译：用于生产SAPPHIRE单晶块的方法和装置
公开(公告)号：JP2008000971A
公开(公告)日：2008-01-10
申请号：JP2006172174
申请日：2006-06-22
申请人： Shibuya:Kk , Sumitomo Metal Mining Co Ltd , Yamakatsu Kogyo Kk , 住友金属鉱山株式会社 , 山勝工業株式会社 , 株式会社シブヤ
发明人： SHO YOSHIHIKO , KOJIMA MASAMI , IINO TAKAYUKI , URAMOTO MIKIO , OKINO HISASHI , SEKI TAKASHI , FUJITA MINORU
IPC分类号： B28D5/02 , C30B29/20
摘要： PROBLEM TO BE SOLVED: To provide a method for producing a sapphire single crystal block having a desired crystal orientation accurately in a short time at a low cost and an apparatus for the method.
SOLUTION: The apparatus for producing the sapphire single crystal block comprises a table 2 for fixing a sapphire single crystal ingot 1 to be processed, a core bit 4 for boring the ingot 1, a core drill unit 5 in which a motor for rotating the core bit is set, and a prop 6 for supporting the motor vertically movably.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：解决的问题：提供一种以低成本在短时间内精确地制造具有期望的晶体取向的蓝宝石单晶块的方法和该方法的装置。解决方案：用于制造蓝宝石单晶块的装置包括用于固定待处理的蓝宝石单晶锭1的工作台2，用于镗锭1的芯钻头4，钻芯单元5，其中用于旋转芯钻头被设置，以及用于支撑电机的支柱6可垂直移动。版权所有（C）2008，JPO＆INPIT

3. 发明专利

JP2006015424A Non-magnetic garnet substrate manufacturing method, non-magnetic garnet substrate, and bismuth substitution type magnetic garnet film obtained using the substrate 有权
标题翻译：非磁性GARNET基板制造方法，非磁性基板和使用基板获得的双相替代型磁性薄膜
公开(公告)号：JP2006015424A
公开(公告)日：2006-01-19
申请号：JP2004193033
申请日：2004-06-30
申请人： Sumitomo Metal Mining Co Ltd , 住友金属鉱山株式会社
发明人： IINO TAKAYUKI , SASAKI TATSUYA , OYAMA HIROSHI
IPC分类号： B24B9/00 , C30B19/12 , C30B29/28
摘要： PROBLEM TO BE SOLVED: To provide a non-magnetic garnet substrate manufacturing method, a non-magnetic garnet substrate, and a bismuth substitution type magnetic garnet film hardly breaking the non-magnetic garnet substrate during the growth of the bismuth substitution type magnetic garnet film and hardly causing a crystal defect in the grown bismuth substitution type magnetic garnet film.
SOLUTION: This non-magnetic garnet substrate manufacturing method having a process for beveling an outer peripheral end face of a non-magnetic garnet single crystal wafer, and a process for polishing a wafer surface, is applied to grow the bismuth substitution type magnetic garnet film by a liquid-phase epitaxial growth method. Micro cracks and a machined distorted layer existing in a beveled surface is eliminated by mechanochemical polishing for mechanically polishing the beveled surface while causing chemical action between an abrasive material and the beveled surface of the single crystal wafer subjected to beveling treatment.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：为了提供非磁性石榴石基板的制造方法，非磁性石榴石基板以及在铋取代型生长期间几乎不破坏非磁性石榴石基板的铋取代型磁性石榴石薄膜磁性石榴石膜，并且在生长的铋取代型磁性石榴石膜中几乎不引起晶体缺陷。解决方案：应用这种具有使非磁性石榴石单晶晶片的外周端面倾斜的工艺以及晶片表面抛光工艺的非磁性石榴石基板的制造方法来生长铋取代型磁性石榴石膜通过液相外延生长法。存在于斜面中的微裂纹和加工变形层通过机械抛光来消除，用于机械抛光斜面，同时在研磨材料与经过斜切处理的单晶晶片的斜面之间引起化学作用。版权所有（C）2006，JPO＆NCIPI

4. 发明专利

JP2004331454A Bismuth substitution type magnetic garnet film and its manufacturing method 审中-公开
公开(公告)号：JP2004331454A
公开(公告)日：2004-11-25
申请号：JP2003129834
申请日：2003-05-08
申请人： Sumitomo Metal Mining Co Ltd , 住友金属鉱山株式会社
发明人： IINO TAKAYUKI , SASAKI TATSUYA , OYAMA HIROSHI
IPC分类号： C30B29/28 , C30B19/12 , H01F10/12 , H01F41/28
摘要： PROBLEM TO BE SOLVED: To provide a bismuth substitution type magnetic garnet film having a high extinction ratio which is grown by a liquid phase epitaxial method, and to provide a method for manufacturing the same by which the film can be obtained with a high yield.
SOLUTION: In the method for manufacturing the bismuth substitution type magnetic garnet film by the liquid phase epitaxial method using a non-magnetic garnet substrate, YbTbBiFe-based magnetic garnet film or the like having a thickness of ≥1,000 μm is manufactured. In the bismuth substitution type magnetic garnet films such as the YbTbBiFe-based magnetic garnet film manufactured by the method, the difference between lattice constants at the surface and the rear surface is ≤0.0002 nm and the extinction ratio is ≥45 dB.
COPYRIGHT: (C)2005,JPO&NCIPI

5. 发明专利

JP2007091540A Method for growing sapphire single crystal 有权
标题翻译：用于生长SAPPHIRE单晶的方法
公开(公告)号：JP2007091540A
公开(公告)日：2007-04-12
申请号：JP2005283898
申请日：2005-09-29
申请人： Sumitomo Metal Mining Co Ltd , 住友金属鉱山株式会社
发明人： IINO TAKAYUKI , KOMI TOSHIYUKI
IPC分类号： C30B29/20 , C30B15/20
摘要： PROBLEM TO BE SOLVED: To provide a method for growing a sapphire single crystal, by which the sapphire single crystal having a small projection degree can be easily and inexpensively grown by using an inexpensive conventional apparatus.
SOLUTION: In the method for growing the sapphire single crystal by a pulling method, the crystal is grown by controlling the number of revolutions of the crystal, the pulling speed, and the temperature of a melt so that the ratio of B to A becomes within a range of 2-4.5, wherein A is the length of a shoulder part ranging from a seed crystal part to the constant diameter part, that is to say, the distance between an intersection point of the surface constituted by the shoulder part and the straight line passing the center of the seed crystal and drawn in the pulling direction and the lower part of the seed crystal, and B is an average diameter of the constant diameter part.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：解决的问题：为了提供一种用于生长蓝宝石单晶的方法，通过这种方法可以通过使用廉价的传统装置来容易且廉价地生长具有小投影度的蓝宝石单晶。解决方案：在通过牵引方法生长蓝宝石单晶的方法中，通过控制晶体的转数，拉伸速度和熔体的温度来生长晶体，使得B与 A变为2-4.5的范围，其中A是从晶种部分到恒定直径部分的肩部的长度，也就是说，由肩部构成的表面的交点之间的距离并且通过晶种的中心的直线并且在拉晶方向和晶种的下部被拉伸，B是恒定直径部分的平均直径。版权所有（C）2007，JPO＆INPIT

6. 发明专利

JP2006315136A Cup-type grindstone for grinding sapphire 审中-公开
标题翻译：用于研磨SAPPHIRE的CUP型砂光石
公开(公告)号：JP2006315136A
公开(公告)日：2006-11-24
申请号：JP2005141095
申请日：2005-05-13
申请人： Sumitomo Metal Mining Co Ltd , 住友金属鉱山株式会社
发明人： SHO YOSHIHIKO , KOJIMA MASAMI , IINO TAKAYUKI
IPC分类号： B24D7/06 , B24D3/00 , B24D3/06
摘要： PROBLEM TO BE SOLVED: To provide a cup-type grindstone for grinding sapphire which can highly accurately and highly efficiently execute surface grinding to sapphire being a highly hard material with stable grinding ability.
SOLUTION: A plurality of segments 13, to which diamond abrasive grains are applied, are mounted to a ring-like mounting face 11 of a cup-type base metal 12 over in the circumferential direction of the mounting face via clearances in the cup-type grindstone 10. When the total of areas surrounded by the outer peripheral edge part 13a, the inner peripheral edge part 13b, and both circumferential end parts 13c, 13d of each segment is set as (A) and the total of areas in each arcuate clearance part 14 surrounded by the facing circumferential end parts 13c, 13d of the adjacent segments and an outer peripheral line part 14a/an inner peripheral line part 14b respectively connecting corner parts of each end part is set as (B), a ratio (B/A) of the total area (B) at the arcuate clearance parts to the total area (A) of the segments is set to ≥50% and ≤200%.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于研磨蓝宝石的杯型砂轮，其能够高度准确和高效地对具有稳定研磨能力的高硬度材料的蓝宝石进行表面研磨。解决方案：将金刚石磨粒施加到其上的多个段13通过在安装面上的间隙安装到杯形基座金属12的环状安装面11上杯形磨石10.当由每个部分的外周边缘部分13a，内周边缘部分13b和两个圆周端部分13c，13d包围的面积的总和设定为（A）时，由相邻部分的相对周向端部13c，13d围绕的每个弓形间隙部分14和分别连接每个端部的角部的外周线部分14a /内周线部分14b设置为（B），比率弓形间隙部分的总面积（B）与片段总面积（A）的比（B / A）设定为≥50％和≤200％。版权所有（C）2007，JPO＆INPIT

7. 发明专利

JP2005314135A Method for producing bismuth-substitution type magnetic garnet membrane, and membrane 审中-公开
标题翻译：生产双相替代型磁性膜和膜的方法
公开(公告)号：JP2005314135A
公开(公告)日：2005-11-10
申请号：JP2004131652
申请日：2004-04-27
申请人： Sumitomo Metal Mining Co Ltd , 住友金属鉱山株式会社
发明人： IINO TAKAYUKI , SASAKI TATSUYA , OYAMA HIROSHI
IPC分类号： G02F1/09 , C30B19/12 , C30B29/28
摘要： PROBLEM TO BE SOLVED: To provide a method for producing a bismuth-substitution type magnetic garnet membrane having larger quenching ratio than ever before and low insertion loss, low pitting defects factor and low crack defects factor, and a method for obtaining the membrane. SOLUTION: This method for producing the bismuth-substitution type magnetic garnet membrane employs an LPE(liquid phase epitaxy) process, characterized in that a non-magnetic garnet single crystal substrate having a half-value width of the rocking curve in lattice(8 8 8) plane of the substrate of ≤140 seconds is used for growing the bismuth-substitution type magnetic garnet membrane by the LPE process. Also the non-magnetic garnet single crystal substrate preferably has a composition expressed by general formula (Gd, Ca) 3 (Ga, Mg, Zr) 5 O 12 . COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：待解决的问题：提供一种具有比以往更高的淬火比和低插入损耗，低点蚀缺陷因子和低裂纹缺陷因子的铋取代型磁性石榴石膜的制造方法，以及获得膜。解决方案：该铋取代型磁性石榴石膜的制造方法采用LPE（液相外延）法，其特征在于，具有晶格中摇摆曲线的半值宽度的非磁性石榴石单晶基板（8 8 8）平面的衬底用于通过LPE工艺生长铋取代型磁性石榴石膜。此外，非磁性石榴石单晶基板优选具有通式（Gd，Ca）3 SB（Ga，Mg，Zr），SB 5，SB 12，。版权所有（C）2006，JPO＆NCIPI

8. 发明专利

JP2008100860A Method for producing single crystal aluminum nitride laminated substrate 审中-公开
标题翻译：用于生产单晶氮化铝层压衬底的方法
公开(公告)号：JP2008100860A
公开(公告)日：2008-05-01
申请号：JP2006282840
申请日：2006-10-17
申请人： Sumitomo Metal Mining Co Ltd , 住友金属鉱山株式会社
发明人： OYAMA HIROSHI , IINO TAKAYUKI
IPC分类号： C30B29/38 , C30B1/10 , H01L21/20 , H01L33/16 , H01L33/32
摘要： PROBLEM TO BE SOLVED: To provide a method for producing a single crystal aluminum nitride laminated substrate, which comprises forming a single crystal aluminum nitride film by converting an alumina component into aluminum nitride toward inside from the surface of a single crystal α-Al 2 O 3 substrate, such as a sapphire substrate or the like, and by which the production efficiency can be improved. SOLUTION: The method for producing the single crystal aluminum nitride laminated substrate comprises forming a single crystal aluminum nitride film by nitriding the single crystal α-Al 2 O 3 substrate under a temperature condition of 1,600-1,750°C. The method is characterized by subjecting the surface of the single crystal α-Al 2 O 3 substrate to an activation treatment at 800-1,400°C in an H 2 -gas atmosphere in a pre-stage before nitriding. The reaction rate of a nitriding reaction performed after the activation treatment can be drastically enhanced by the activation treatment, and thereby, it becomes possible to remarkably improve the production efficiency of the single crystal aluminum nitride laminated substrate. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种单晶氮化铝层压基板的制造方法，其包括通过将单晶氮化铝膜从单晶α-烯烃的表面向内侧转变为氮化铝，形成单晶氮化铝膜，例如蓝宝石衬底等，并且可以提高生产效率。解决方案：制造单晶氮化铝层叠基板的方法包括：通过氮化单晶α-Al 2 SB 3 O 3 / SB>基板来形成单晶氮化铝膜在1600〜1750℃的温度条件下。该方法的特征在于使单晶α-Al 2 3 衬底的表面在800-1400℃下在H SB 2中进行活化处理在氮化前的前期阶段气体气氛。通过活化处理可以显着提高活化处理后的氮化反应的反应速度，从而可以显着提高单晶氮化铝层叠基板的制造效率。版权所有（C）2008，JPO＆INPIT

9. 发明专利

JP2008023677A Wheel-shaped rotating grinding wheel for hard and brittle material substrate 审中-公开
标题翻译：用于硬质和轻质材料基材的轮形旋转砂轮
公开(公告)号：JP2008023677A
公开(公告)日：2008-02-07
申请号：JP2006200390
申请日：2006-07-24
申请人： Sumitomo Metal Mining Co Ltd , 住友金属鉱山株式会社
发明人： YOSHIDA TAKAYUKI , IINO TAKAYUKI
IPC分类号： B24B55/02 , B24B9/00
摘要： PROBLEM TO BE SOLVED: To provide a wheel-shaped rotating grinding wheel capable of chamfering the peripheral part of a substrate made of a material with a high degree of hardness, such as sapphire, with stable grinding capacity, a high degree of accuracy, and a long life.
SOLUTION: This wheel-shaped rotating grinding wheel is provided with a wheel-shaped metal base 1, a diamond grinding wheel layer 2 provided in the circumferential direction of the peripheral surface of this metal base, and a plurality of circular grinding grooves 3 substantially U-shaped in cross section, provided in parallel with each other in the circumferential direction of the surface of this grinding wheel layer. A plurality of through-holes 4 are provided in each bottom face section of the circular grinding grooves, and the open end of a grinding fluid feeding bore hole 5 provided radially from the central part of the rotation of the wheel-shaped metal base is connected to the open end of each through-hole. Herein, W>H is established when the diameter of the through-hole is expressed as H, and the width of the bottom face section is expressed as W.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：为了提供一种能够使具有高硬度的材料的诸如蓝宝石的材料的周边部分倒角的轮形旋转砂轮，具有稳定的研磨能力，高的准确，寿命长。解决方案：该轮形旋转砂轮设置有轮形金属基座1，金属砂轮层2，该金刚石砂轮层2设置在该金属基座的周面的圆周方向上，以及多个圆形磨削槽 3，其横截面大致U形，在该砂轮层的表面的圆周方向上彼此平行设置。在圆形磨削槽的每个底面部分设置有多个通孔4，并且从轮形金属基座的旋转的中心部径向设置的磨削液供给孔5的开口端连接到每个通孔的开口端。这里，当通孔的直径表示为H时，建立W> H，底面部的宽度表示为W.版权所有（C）2008，JPO＆INPIT

10. 发明专利

JP2005231958A Apparatus for growing sapphire single crystal 审中-公开
标题翻译：用于生长SAPPHIRE单晶的装置
公开(公告)号：JP2005231958A
公开(公告)日：2005-09-02
申请号：JP2004044508
申请日：2004-02-20
申请人： Sumitomo Metal Mining Co Ltd , 住友金属鉱山株式会社
发明人： IINO TAKAYUKI , NAKAJI TOSHIHIKO , KOMI TOSHIYUKI
IPC分类号： C30B29/20 , C30B15/14
摘要： PROBLEM TO BE SOLVED: To provide a single crystal growing apparatus for producing a sapphire single crystal, whose protruding degree is small and in whose crystal no bubble is mixed.
SOLUTION: This single crystal growing apparatus for producing the sapphire single crystal has the following structure. The principal part of the apparatus consists of a high-frequency induction coil, a refractory crucible, an iridium crucible, a heat insulating material, a refractory crucible-support cylinder, and a cylindrical heater. The iridium crucible is housed in the refractory crucible through the heat insulating material. The refractory crucible-support cylinder, inside which the cylindrical heater is provided, is provided on the bottom part of the refractory crucible in a manner that the upper face of the cylindrical heater is in contact with the bottom face of the refractory crucible. All of above articles are housed in a spatial part inside the high-frequency induction coil.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种用于制造突出度小并且其晶体中没有气泡混合的蓝宝石单晶的单晶生长装置。解决方案：用于制造蓝宝石单晶的单晶生长装置具有以下结构。设备的主要部分由高频感应线圈，耐火坩埚，铱坩埚，隔热材料，耐火坩埚支撑筒和圆柱形加热器组成。铱坩埚通过绝热材料容纳在耐火坩埚中。在耐火坩埚的底部设置有圆柱形加热器内部的耐火坩埚支撑筒，其圆筒形加热器的上表面与耐火坩埚的底面相接触。所有上述物品都容纳在高频感应线圈内部的空间部分中。版权所有（C）2005，JPO＆NCIPI

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