专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

JP2012197496A Composite member 审中-公开
标题翻译：复合材料
公开(公告)号：JP2012197496A
公开(公告)日：2012-10-18
申请号：JP2011063209
申请日：2011-03-22
申请人： Sumitomo Electric Ind Ltd , Allied Material Corp , 住友電気工業株式会社 , 株式会社アライドマテリアル
发明人： IWAYAMA ISAO , NISHIKAWA TAICHIRO , IKEDA TOSHIYA , KOYAMA SHIGEKI
IPC分类号： C22C29/06 , B22F7/04 , C22C1/10 , H01L23/373
CPC分类号： C22C29/065 , B22F2999/00 , C04B41/009 , C04B41/515 , C04B41/88 , C04B2111/00844 , C22C2001/1073 , C22C2204/00 , C25D7/12 , H01L23/15 , H01L23/34 , H01L23/3731 , H01L23/3735 , H01L23/3736 , H01L2924/0002 , Y10T428/24612 , Y10T428/2495 , Y10T428/263 , B22F3/02 , B22F3/10 , B22F3/26 , C25D7/00 , C23C18/00 , H01L2924/00 , C04B35/565 , C04B38/00 , C04B41/4523
摘要： PROBLEM TO BE SOLVED: To provide a composite member which can efficiently radiate heat to an installation object, a heat radiation member using the composite member, and a semiconductor device using the heat radiation member.SOLUTION: The composite member 1a has: a substrate 2 formed of a composite material that combines magnesium or a magnesium alloy and SiC; and metal coating layers 3, 4 formed on the surface of the substrate 2. One side thereof is packaged with a semiconductor element or the like, the other side is fixed to the installation object such as a cooling apparatus or the like, and it is utilized as the heat radiation member of a semiconductor element. In the composite member 1a, at least once side in the cooling side face and element side face has a warped shape. The composite member 1a is fixed to the installation object so that a warp in the cooling side is crushed. By this pressing force, the composite member 1a can be adhered to the installation object. Thus, the composite member 1a can efficiently radiate the heat of a semiconductor element or the like to the installation object, and can be suitably utilized for the radiation member of a semiconductor device.
摘要翻译：要解决的问题：提供一种可以有效地向安装对象辐射热量的复合构件，使用该复合构件的散热构件和使用该散热构件的半导体装置。解决方案：复合构件1a具有：由复合材料形成的基底2，该复合材料结合镁或镁合金与SiC; 以及形成在基板2的表面上的金属被覆层3,4，其一面与半导体元件等一体地封装，另一方固定在诸如冷却装置等的安装对象上，用作半导体元件的散热构件。在复合构件1a中，冷却侧面和元件侧面中的至少一侧为翘曲形状。复合构件1a固定在安装对象上，使得冷却侧的翘曲被压碎。通过该按压力，可以将复合构件1a粘接到安装对象。因此，复合构件1a可以有效地将半导体元件等的热量照射到安装对象上，并且可以适用于半导体器件的辐射构件。版权所有（C）2013，JPO＆INPIT

2. 发明专利

JP2011089161A Composite material 有权
标题翻译：复合材料
公开(公告)号：JP2011089161A
公开(公告)日：2011-05-06
申请号：JP2009242791
申请日：2009-10-21
申请人： Sumitomo Electric Ind Ltd , 住友電気工業株式会社
发明人： IWAYAMA ISAO , KAWAI CHIHIRO
IPC分类号： C22C1/10 , C22C23/00 , C22C26/00 , H01L23/373 , H05K7/20
摘要： PROBLEM TO BE SOLVED: To provide a composite material which is suitable for the heat radiation member of a semiconductor element, to provide a method for producing the same, to provide a heat radiation member, and to provide a semiconductor device. SOLUTION: The composite material is obtained by dispersing diamond into the metal matrix made of magnesium (Mg) or a magnesium alloy (Mg alloy). The composite material is produced by infiltrating melted Mg or melted Mg alloy (molten Mg) into a powder compact produced using diamond powder and Si powder. Before the infiltration, the powder compact is heated to a prescribed holding temperate of the melting point of Si or higher, the surface of the powder compact is converted into SiC, and is further oxidized so as to convert at least the surface side part of the SiC into silicon oxide. When the oxidized compact including the silicon oxide is brought into contact with the molten Mg, by reaction with the silicon oxide, Mg 2 Si is produced. The oxidized compact in which the silicon oxide is formed has excellent wettability with the molten Mg, and from which a composite material having excellent thermal conductivity can be obtained. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种适用于半导体元件的散热构件的复合材料，以提供其制造方法，以提供散热构件，并提供半导体器件。解决方案：通过将金刚石分散在由镁（Mg）或镁合金（Mg合金）制成的金属基体中获得复合材料。复合材料通过将熔融的Mg或熔融的Mg合金（熔融的Mg）浸渗到使用金刚石粉末和Si粉末制造的粉末压块中来制备。在渗透之前，将粉末压块加热到规定的熔点为Si以上的保持温度，将粉末成形体的表面转化成SiC，进一步氧化，至少将表面侧部分 SiC转化为氧化硅。当包含氧化硅的氧化物与熔融的Mg接触时，通过与氧化硅的反应，生成MgSb 2 Si。其中形成氧化硅的氧化体与熔融的Mg具有优异的润湿性，并且可以获得具有优良导热性的复合材料。版权所有（C）2011，JPO＆INPIT

3. 发明专利

JP2013004810A Heater for heating wafer 审中-公开
标题翻译：加热加热器
公开(公告)号：JP2013004810A
公开(公告)日：2013-01-07
申请号：JP2011135613
申请日：2011-06-17
申请人： Sumitomo Electric Ind Ltd , 住友電気工業株式会社
发明人： IWAYAMA ISAO , NISHIKAWA TAICHIRO , SAKITA SHIGENOBU , ITAKURA KATSUHIRO , MIKUMO AKIRA , NAKADA HIROHIKO
IPC分类号： H01L21/683 , H01L21/66 , H05B3/74
摘要： PROBLEM TO BE SOLVED: To provide a heater for heating a wafer which can uniformize temperature distribution relative to the wafer to be mounted and has excellent rigidity.SOLUTION: A heater 10 for heating a wafer includes: a wafer placement table 1 having a placement surface 1a on which the wafer is placed; and a heating element 2 for heating the wafer placement table 1. The wafer placement table 1 comprises a metal-ceramic composite having 250 W/mK or more of thermal conductivity and 200 GPa or more of a Young's modulus. Preferably, the metal-ceramic composite is a composite of metal comprising Mg or Mg alloy and ceramics comprising SiC.
摘要翻译：要解决的问题：提供一种用于加热晶片的加热器，其可以相对于待安装的晶片使温度分布均匀，并且具有优异的刚性。解决方案：用于加热晶片的加热器10包括：具有放置表面1a的晶片放置台1，晶片放置在该放置表面1a上; 以及用于加热晶片放置台1的加热元件2.晶片放置台1包括具有250W / mK以上的热导率和200GPa以上的杨氏模量的金属 - 陶瓷复合体。优选地，金属 - 陶瓷复合物是包含Mg或Mg合金的金属和包括SiC的陶瓷的复合材料。版权所有（C）2013，JPO＆INPIT

4. 发明专利

JP2008311632A Heat dissipating member and its manufacturing method 有权
标题翻译：散热器及其制造方法
公开(公告)号：JP2008311632A
公开(公告)日：2008-12-25
申请号：JP2008121518
申请日：2008-05-07
申请人： Allied Material Corp , Sumitomo Electric Ind Ltd , 住友電気工業株式会社 , 株式会社アライドマテリアル
发明人： IWAYAMA ISAO , KUSAKARI MISATO , TAKAGI YOSHIYUKI , NISHIKAWA TAICHIRO , NAKAI YOSHIHIRO , IKEDA TOSHIYA
IPC分类号： H01L23/373 , B22D19/00 , B22D19/14
摘要： PROBLEM TO BE SOLVED: To provide a method, for highly productively manufacturing a heat dissipating member, capable of manufacturing the heat dissipating member in which a metal layer is provided on one surface of a composite member, and the heat dissipating member. SOLUTION: A joining layer composed of a low-melting point metal having a lower liquidus temperature than a metal constituting a metal plate is formed on the metal plate. This metal plate is disposed in a mold; and a mixed molten metal in which a molten metal matrix is mixed with ceramic particles is poured in the mold. The mixed molten metal is solidified to form the composite member, and the mixed molten metal melts the joining layer to join the composite member and the metal plate to form a metal layer, thereby providing the heat dissipating member having the metal layer on one surface of the composite member. Utilization of the metal plate on which the joining layer is formed can reduce the temperature of the mold and improve the productivity of the heat dissipation member. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种能够高效地制造散热构件的方法，该方法能够制造其中在复合构件的一个表面上设置有金属层的散热构件和散热构件。解决方案：在金属板上形成由具有比构成金属板的金属低的液相线温度的低熔点金属构成的接合层。该金属板设置在模具中; 并将熔融金属基体与陶瓷颗粒混合的混合熔融金属倒入模具中。混合的熔融金属固化形成复合构件，混合熔融金属熔化接合层，以将复合构件和金属板接合以形成金属层，由此在具有金属层的一个表面上提供具有金属层的散热构件复合构件。利用形成有接合层的金属板可以降低模具的温度并提高散热构件的生产率。版权所有（C）2009，JPO＆INPIT

5. 发明专利

JP2013245374A Composite material, method for producing the same, and semiconductor device 审中-公开
标题翻译：复合材料，其制造方法和半导体器件
公开(公告)号：JP2013245374A
公开(公告)日：2013-12-09
申请号：JP2012119305
申请日：2012-05-25
申请人： Sumitomo Electric Ind Ltd , 住友電気工業株式会社 , Allied Material Corp , 株式会社アライドマテリアル
发明人： IWAYAMA ISAO , NISHIKAWA TAICHIRO , IKEDA TOSHIYA , KOYAMA SHIGEKI , OKAMOTO TADASHI
IPC分类号： C22C29/06 , C22C1/10 , H01L23/373
摘要： PROBLEM TO BE SOLVED: To provide a composite material capable of constructing a thin, light heat dissipation member, and a method for producing the composite material, and to provide a semiconductor device equipped with the heat dissipation member.SOLUTION: A composite material includes ≥50 vol.% of SiC, with the remainder comprising magnesium or a magnesium alloy and inevitable impurities, and has a plate shape having a thickness of 40 μm and ≤200 μm, and the mass ratio of the fine powder and the coarse powder is 8:2 to 5:5.
摘要翻译：要解决的问题：提供一种能够构成薄型轻质散热构件的复合材料，以及该复合材料的制造方法，提供配备有散热构件的半导体装置。解决方案：复合材料包括≥ 50体积％的SiC，其余为镁或镁合金和不可避免的杂质，并且具有厚度<3mm的板状。 SiC是平均粒径≤40μm的细粉末和平均粒径>40μm，≤200μm的粗粉末的混合粉末，细粉末和粗粉末的质量比为 8：2到5：5。

6. 发明专利

JP2011142048A Electrolyte, magnesium ion secondary battery, and power system 审中-公开
标题翻译：电解液，镁离子二次电池和电力系统
公开(公告)号：JP2011142048A
公开(公告)日：2011-07-21
申请号：JP2010003127
申请日：2010-01-08
申请人： Sumitomo Electric Ind Ltd , 住友電気工業株式会社
发明人： MASHIMA MASATOSHI , INASAWA SHINJI , SAKAI SHOICHIRO , IWAYAMA ISAO , SUGIHARA TAKAYASU
IPC分类号： H01M10/054 , H01M10/0567
CPC分类号： Y02E60/12
摘要： PROBLEM TO BE SOLVED: To provide an electrolyte for a magnesium ion secondary battery, a magnesium ion secondary battery and a power system made of the magnesium ion secondary battery, which can restrain generation of leakage or evaporation. SOLUTION: The electrolyte solution for the magnesium ion secondary battery includes: the electrolyte as a main ingredient constituting the electrolyte solution; and an additive dissolving the electrolyte, wherein the latter contains a halogen element. The halogen element is preferred to be bromine, and may be either iodine or chlorine. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于镁离子二次电池，镁离子二次电池和由镁离子二次电池制成的电力系统的电解质，其可以抑制泄漏或蒸发的产生。解决方案：用于镁离子二次电池的电解液包括：电解质作为构成电解质溶液的主要成分; 和溶解电解质的添加剂，其中后者含有卤素元素。卤素元素优选为溴，并且可以是碘或氯。版权所有（C）2011，JPO＆INPIT

7. 发明专利

JP2011116575A Method for producing magnesium silicide, magnesium silicide, electrode member and thermoelectric element 审中-公开
标题翻译：生产硅氧化镁，硅酸镁，电极部件和热电元件的方法
公开(公告)号：JP2011116575A
公开(公告)日：2011-06-16
申请号：JP2009273343
申请日：2009-12-01
申请人： Sumitomo Electric Ind Ltd , 住友電気工業株式会社
发明人： IWAYAMA ISAO , NISHIKAWA TAICHIRO , MASHIMA MASATOSHI , SAKAI SHOICHIRO
IPC分类号： C01B33/06 , H01L35/14 , H01L35/34
摘要： PROBLEM TO BE SOLVED: To provide a method for producing high purity magnesium silicide with high efficiency.
SOLUTION: The method for producing magnesium silicide includes a step (S10) of preparing a treatment object consisting mainly of Si; and a step (S20) of bringing Mg vapor into contact with the treatment object in a state where the treatment object is being heated. When the step (S10) of bringing Mg vapor into contact is carried out, a preferred heating temperature of the treatment object is 500-1,500°C. In the step of bringing Mg vapor into contact, the treatment object is preferably put in an atmosphere containing at least one gas selected from the group consisting of Ar and He.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种高效率生产高纯度硅化镁的方法。解决方案：制备硅化镁的方法包括制备主要由Si组成的处理对象的步骤（S10）以及在处理对象被加热的状态下使Mg蒸气与处理对象接触的工序（S20）。当进行使Mg蒸气接触的步骤（S10）时，处理对象的优选加热温度为500〜1500℃。在使Mg蒸气接触的工序中，优选将处理对象置于含有选自Ar和He的至少一种气体的气氛中。版权所有（C）2011，JPO＆INPIT

8. 发明专利

JP2014062329A Magnesium-base composite material 有权
标题翻译：镁基复合材料
公开(公告)号：JP2014062329A
公开(公告)日：2014-04-10
申请号：JP2013256016
申请日：2013-12-11
申请人： Sumitomo Electric Ind Ltd , 住友電気工業株式会社 , Allied Material Corp , 株式会社アライドマテリアル
发明人： IWAYAMA ISAO , TAKAGI YOSHIYUKI , KUSAKARI MISATO , NISHIKAWA TAICHIRO , IKEDA TOSHIYA
IPC分类号： C22C29/06 , C01B31/36 , C22C1/10
摘要： PROBLEM TO BE SOLVED: To provide a heat radiation member small in porosity and excellent in heat characteristics such that heat conductivity is high and a thermal expansion coefficient difference from a heat evolving object is small.SOLUTION: The heat radiation member comprises a magnesium-base composite material obtained by dispersing SiC in a base material composed of magnesium or a magnesium alloy where the content of SiC in the magnesium-base composite material is not less than 50% and not greater than 80% by a volume ratio, the porosity in the magnesium-base composite material is less than 3%, the heat conductivity is not less than 180 W/mk, and the heat expansion coefficient is not less than 4×10/K and not greater than 10×10/K.
摘要翻译：要解决的问题：提供一种孔隙率小且热特性优异的散热构件，其导热率高，并且与散热物体的热膨胀系数差异小。散热构件包括镁基通过将SiC分散在由镁或镁合金构成的基材中而获得的复合材料，其中镁基复合材料中的SiC含量以体积比不小于50％且不大于80％，其中孔隙率镁基复合材料小于3％，导热率不低于180W / mk，热膨胀系数不小于4×10 / K，不大于10×10 / K。

9. 发明专利

JP2013245373A Composite member, method for manufacturing the same, and semiconductor device 审中-公开
标题翻译：复合构件，其制造方法和半导体器件
公开(公告)号：JP2013245373A
公开(公告)日：2013-12-09
申请号：JP2012119304
申请日：2012-05-25
申请人： Sumitomo Electric Ind Ltd , 住友電気工業株式会社 , Allied Material Corp , 株式会社アライドマテリアル
发明人： IWAYAMA ISAO , NISHIKAWA TAICHIRO , IKEDA TOSHIYA , KOYAMA SHIGEKI , OKAMOTO TADASHI
IPC分类号： C22C29/06 , B22D19/00 , B22D19/14 , C04B41/88 , C22C1/10
摘要： PROBLEM TO BE SOLVED: To provide a composite member capable of constructing a heat-dissipation structure having excellent heat dissipation property, and to provide a method for manufacturing the composite member and a semiconductor device.SOLUTION: A composite member 1 includes a body part 10 constituted of a composite material containing ≥50 vol.% of SiC, with the remainder comprising magnesium or a magnesium alloy and inevitable impurities. In the body part 10, a flow passage 20 is formed to discharge a fluid supplied from the outside of the body part 10 to the outside of the body part 10 through the inside of the body part 10. The flow passage 20 is constituted of a tubular material made of, for example, metal or nonmetal, and is integrally provided in the composite material. In the composite member 1, the body part 10 is constituted of the Mg-SiC composite material having excellent heat dissipation property, and further, the body part 10 can be effectively cooled by flowing a fluid through the flow passage 20, and thereby, a cooling effect by the fluid is obtained. Accordingly, the composite member 1 can construct a heat-dissipation structure having excellent heat dissipation property.
摘要翻译：要解决的问题：提供一种能够构成散热性优异的散热结构的复合构件，提供一种复合构件和半导体装置的制造方法。复合构件1包括主体部10 由含有≥50体积％的SiC的复合材料构成，其余为镁或镁合金和不可避免的杂质。在主体部10中形成有流路20，其通过主体部10的内部将从主体部10的外部供给的流体排出到主体部10的外部。流路20由由例如金属或非金属制成的管状材料，并且整体地设置在复合材料中。在复合构件1中，主体部10由具有优异的散热性的Mg-SiC复合材料构成，并且通过使流体流过流路20能够有效地冷却主体部10，由此，获得流体的冷却效果。因此，复合构件1可以构成散热特性优异的散热结构。

10. 发明专利

JP2012144767A Composite member, heat radiation member, semiconductor device, and method of manufacturing composite member 审中-公开
标题翻译：复合构件，热辐射构件，半导体装置和制造复合构件的方法
公开(公告)号：JP2012144767A
公开(公告)日：2012-08-02
申请号：JP2011003265
申请日：2011-01-11
申请人： Allied Material Corp , Sumitomo Electric Ind Ltd , 住友電気工業株式会社 , 株式会社アライドマテリアル
发明人： IWAYAMA ISAO , NISHIKAWA TAICHIRO , IKEDA TOSHIYA , KOYAMA SHIGEKI
IPC分类号： C25D5/42 , B32B15/01 , C22C1/10 , C22C23/00 , C22C29/02 , C23C28/02 , C25D5/12 , H01L23/36 , H01L23/373
摘要： PROBLEM TO BE SOLVED: To provide: a composite member superior in adhesion with solder; a heat radiation member comprising the composite members; a semiconductor device including the heat radiation member; and a method of manufacturing the composite member.SOLUTION: A composite member 1 includes a substrate 20 made of a composite material in which magnesium or magnesium alloy is combined with SiC, and a metal covered layer 10 having multilayer structure that is formed on the surface of the substrate 20. The metal covered layer 10 includes, in order from the side of the substrate 20: an underlayer 11 having the same composition as a matrix metal of the substrate 20; a zinc layer 12 formed by zincate treatment; a copper plating layer 13; and a nickel plating layer 14. The copper plating layer 13 is comparatively thick, exceeding 1 μm in thickness. Due to such a structure, peeling strength between the composite member 1 and solder is high, and semiconductor elements or the like are hard to be peeled off from the composite member 1 when they are bonded thereto.
摘要翻译：要解决的问题：提供：与焊料的粘合性优异的复合构件; 包括所述复合构件的散热构件; 包括所述散热构件的半导体器件; 以及该复合部件的制造方法。解决方案：复合构件1包括由镁或镁合金与SiC组合的复合材料制成的基板20和形成在基板20的表面上的具有多层结构的金属覆盖层10。金属被覆层10从基板20的一侧依次包括：具有与基板20的基体金属相同组成的底层11; 通过锌酸盐处理形成的锌层12; 镀铜层13; 和镀镍层14.铜镀层13的厚度比较厚，超过1μm。由于这种结构，复合构件1和焊料之间的剥离强度高，并且当半导体元件等与它们结合时难以从复合构件1剥离。版权所有（C）2012，JPO＆INPIT

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式