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1. 发明专利

JP2005247474A Winding method for wire body and winding device 有权
标题翻译：用于线体和绕线装置的绕线方法
公开(公告)号：JP2005247474A
公开(公告)日：2005-09-15
申请号：JP2004058269
申请日：2004-03-02
申请人： Sumitomo Electric Ind Ltd , 住友電気工業株式会社
发明人： ASANO HIROSHI , MORITA YUKIFUSA , FUKUDA KENJI , TAKAI YASUHIRO
IPC分类号： B65H57/16 , H01B13/00
摘要： PROBLEM TO BE SOLVED: To prevent a plurality of wire bodies from getting loose at paying out even if a plurality of wire bodies are simultaneously wound on one bobbin.
SOLUTION: In the winding device 1 for the wire body, a parallel guide rollers 9 having a guide area 14 for guiding seven wires W by every one in parallel are provided relative to one winding bobbin 7 for winding the wire W. Further, in the winding method for the wire body, seven wires W are divided to respective guide areas 14 formed on the parallel guide rollers 9 and are guided toward the winding bobbin 7 in parallel. Then, the seven wires W are simultaneously wound on the winding bobbin 7 while retaining the arrangement.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：即使多个线体同时缠绕在一个线轴上，也可防止多个线体松散。解决方案：在用于线体的绕线装置1中，相对于卷绕线W的一个绕线架7，设置有具有用于平行地引导七线W的引导区域14的平行导辊9。在线体的绕线方法中，七根线W被分割成形成在平行导辊9上的各个引导区域14，并且并行地被引向绕线架7。然后，在保持该布置的同时，将七根电线W同时缠绕在绕线筒管7上。版权所有（C）2005，JPO＆NCIPI

2. 发明专利

JP2009152237A Vacuum lead-free soldering method of wide-gap semiconductor chip 有权
标题翻译：真空无铅焊接半导体芯片的无铅焊接方法
公开(公告)号：JP2009152237A
公开(公告)日：2009-07-09
申请号：JP2007326226
申请日：2007-12-18
申请人： National Institute Of Advanced Industrial & Technology , Sumitomo Electric Ind Ltd , 住友電気工業株式会社 , 独立行政法人産業技術総合研究所
发明人： NAKAGAWA HIROSHI , TANAKA YASUNORI , FUKUDA KENJI , AOYAGI MASAHIRO , OHASHI HIROMICHI , TOKUDA HITOMOTO
IPC分类号： H01L21/52
摘要： PROBLEM TO BE SOLVED: To provide a vacuum lead-free soldering method of a wide-gap semiconductor chip which so makes the junction state generated when performing a soldering by using a lead-free solder good as to be able to suppress the generation of voids effectively, in the electrode structure of the wide-gap semiconductor chip.
SOLUTION: In the method for performing the soldering of the electrode junction of a wide-gap semiconductor chip by a lead-free solder in a vacuum environment, a pressure reducing state is so created in the case of the melting state of the lead-free solder by heating it as to combine this pressure reducing state with the ordinary-pressure state.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种宽间隙半导体芯片的真空无铅焊接方法，其使得通过使用无铅焊料进行焊接时产生的结状态能够抑制在宽间隙半导体芯片的电极结构中有效地产生空隙。解决方案：在真空环境中通过无铅焊料进行宽间隙半导体芯片的电极结的焊接的方法中，在熔融状态的情况下，产生减压状态通过加热无铅焊料将该减压状态与普通压力状态相结合。版权所有（C）2009，JPO＆INPIT

3. 发明专利

JP2005251608A Manufacturing method of twisted conductor, twisted conductor, and electric wire 审中-公开
标题翻译：双向导体，双向导体和电线的制造方法
公开(公告)号：JP2005251608A
公开(公告)日：2005-09-15
申请号：JP2004061841
申请日：2004-03-05
申请人： Sumitomo Electric Ind Ltd , 住友電気工業株式会社
发明人： ASANO HIROSHI , MORITA YUKIFUSA , FUKUDA KENJI
IPC分类号： H01B5/08 , H01B7/00 , H01B13/02
摘要： PROBLEM TO BE SOLVED: To prevent a center child-stranded conductor from protruding in a wire in which six child-stranded conductors are parent-stranded at the surrounding of the center child-stranded conductor.
SOLUTION: As for a manufacturing method of the twisted conductor, in the periphery of the center child-stranded conductor 2 in which a plurality of strand conductors are twisted together, the twisted conductor 1 is manufactured by parent-twisting the six child-stranded conductors 3 in which a plurality of the child-stranded conductors are twisted together in the same direction as the twisting direction of the strand conductor in the center child-stranded conductor 2. Furthermore, as for the electric wire 10, coating 11 is prepared at the surrounding of the twisted conductor 1.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：为了防止中心的儿童绞合导体突出在其中六根儿童绞合导体在中心儿童绞合导体周围的母线绞合的电线中。解决方案：对于绞合导体的制造方法，在多根绞线导体被绞合在一起的中心儿童绞合导体2的周围，绞合导体1通过母线扭转六个孩子横列导体3，其中多条子线绞合导体沿与中心儿童绞合导体2中绞线导体的扭转方向相同的方向绞合在一起。此外，对于电线10，涂层11为在绞合导体1周围准备。版权所有（C）2005，JPO＆NCIPI

4. 发明专利

JP2009099655A Lead-free soldering method of wide-gap semiconductor chip 审中-公开
标题翻译：无缝焊接半导体芯片的无铅焊接方法
公开(公告)号：JP2009099655A
公开(公告)日：2009-05-07
申请号：JP2007267697
申请日：2007-10-15
申请人： National Institute Of Advanced Industrial & Technology , Sumitomo Electric Ind Ltd , 住友電気工業株式会社 , 独立行政法人産業技術総合研究所
发明人： NAKAGAWA HIROSHI , TANAKA YASUNORI , FUKUDA KENJI , AOYAGI MASAHIRO , OHASHI HIROMICHI , TOKUDA HITOMOTO
IPC分类号： H01L21/52
摘要： PROBLEM TO BE SOLVED: To provide a lead-free soldering method of a wide-gap semiconductor chip, which can achieve a satisfactory junction state in soldering using lead-free solder in the electrode structure of the wide-gap semiconductor chip, and to provide the wide-gap semiconductor chip by the lead-free soldering.
SOLUTION: In the lead-free soldering method of the wide-gap semiconductor chip, a protective layer, which prevents the oxidation of the outermost surface of an electrode in the lead-free soldering, is formed on the electrode of the wide-gap semiconductor chip, and soldering is performed on the protective layer by lead-free solder.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题为了提供宽间隙半导体芯片的无铅焊接方法，其能够在宽间隙半导体芯片的电极结构中使用无铅焊料实现令人满意的接合状态，并通过无铅焊接提供宽间隙半导体芯片。解决方案：在宽间隙半导体芯片的无铅焊接方法中，在宽电极的电极上形成防止无铅焊接中电极的最外表面的氧化的保护层差的半导体芯片，并且通过无铅焊料在保护层上进行焊接。版权所有（C）2009，JPO＆INPIT

5. 发明专利

JP2011141032A Magnesium-base alloy screw 有权
标题翻译：镁基合金螺丝
公开(公告)号：JP2011141032A
公开(公告)日：2011-07-21
申请号：JP2011018329
申请日：2011-01-31
申请人： Maruemu Works Co Ltd , Sumitomo Electric Ind Ltd , 住友電気工業株式会社 , 株式会社丸ヱム製作所
发明人： OISHI YUKIHIRO , KAWABE NOZOMI , HASHIMOTO KENSABURO , FUKUDA KENJI
IPC分类号： F16B35/00 , B21H3/06 , C22C23/00 , C22C23/02 , C22C23/04 , C22C23/06 , C22F1/00 , C22F1/06 , F16B37/00
摘要： PROBLEM TO BE SOLVED: To provide a screw made of a magnesium-base alloy excellent in strength.
SOLUTION: The magnesium-base alloy screw is made of the magnesium-base alloy containing Al by 5.5-12 mass%. The magnesium-base alloy screw is formed by forming and shaping a drawn material wire made of the magnesium-base alloy obtained by drawing. The average crystal grain size of the wire is ≤10 μm, and the maximum crystal grain size is ≤15 μm, and moreover, the tension strength of the screw is ≥220 MPa. Furthermore, the magnesium-base alloy may contain one or more kinds selected from Mn: 0.1-2.0%, Zn: 0.1-5.0%, and Si: 0.1-5.0% by mass%.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种强度优异的镁基合金制螺杆。解决方案：镁基合金螺杆由含有5.5-12质量％的Al的镁基合金制成。镁基合金螺杆通过由通过拉伸获得的由镁基合金制成的拉丝材料线形成和成形而形成。线的平均晶粒尺寸≤10μm，最大结晶粒径≤15μm，螺杆的拉伸强度≥220MPa。此外，镁基合金可以含有选自Mn：0.1〜2.0％，Zn：0.1-5.0％，Si：0.1-5.0质量％的一种或多种。版权所有（C）2011，JPO＆INPIT

6. 发明专利

JP2010010383A Method of bonding semiconductor chip electrode 审中-公开
标题翻译：键合半导体芯片电极的方法
公开(公告)号：JP2010010383A
公开(公告)日：2010-01-14
申请号：JP2008167759
申请日：2008-06-26
申请人： National Institute Of Advanced Industrial & Technology , Sumitomo Electric Ind Ltd , 住友電気工業株式会社 , 独立行政法人産業技術総合研究所
发明人： NAKAGAWA HIROSHI , TANAKA YASUNORI , FUKUDA KENJI , AOYAGI MASAHIRO , OHASHI HIROMICHI , TOKUDA HITOMOTO
IPC分类号： H01L21/60
CPC分类号： H01L2224/37 , H01L2224/37147 , H01L2224/40 , H01L2224/40245 , H01L2224/83801 , H01L2224/8485 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/01082 , H01L2924/01322 , H01L2924/00014 , H01L2924/00012
摘要： PROBLEM TO BE SOLVED: To provide a bonding method using a high temperature adhesive hardly influenced by the surface condition of an electrode formed on a semiconductor chip. SOLUTION: The electrode of the semiconductor chip is bonded by application of an adhesive and flux for soldering and by curing them in a nitrogen atmosphere. COPYRIGHT: (C)2010,JPO&INPIT

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