专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

JP2014179537A Inorganic and organic hybrid photoelectric conversion device 审中-公开
标题翻译：无机和有机混合光电转换器件
公开(公告)号：JP2014179537A
公开(公告)日：2014-09-25
申请号：JP2013053741
申请日：2013-03-15
申请人： Sumitomo Chemical Co Ltd , 住友化学株式会社 , Osaka Univ , 国立大学法人大阪大学
发明人： MATSUMURA MICHIO , ONISHI TOSHIHIRO , OGUMA JUN
IPC分类号： H01L51/42
CPC分类号： Y02E10/549 , Y02P70/521
摘要： PROBLEM TO BE SOLVED: To provide an inorganic and organic hybrid photoelectric conversion device excellent in photoelectric conversion efficiency.SOLUTION: An inorganic and organic hybrid photoelectric conversion device includes a first electrode, a second electrode, and an active layer which is provided between the first electrode and the second electrode and has a first active layer and a second active layer in contact with the first active layer. The first active layer has a plurality of needle-like inorganic oxide semiconductor structures that project within a thickness of the second active layer from a surface in contact with the second active layer, have a length in a range of 50-1,000 nm, and have an aspect ratio of 15 or less. The second active layer contains an organic material, and has a thickness twice as large as a length of the needle-like inorganic oxide semiconductor structure, or less.
摘要翻译：要解决的问题：提供光电转换效率优异的无机和有机混合光电转换装置。解决方案：一种无机和有机混合光电转换装置，包括第一电极，第二电极和有源层，其设置在第一电极和第二电极，并且具有与第一有源层接触的第一有源层和第二有源层。第一有源层具有多个针状无机氧化物半导体结构，其从与第二有源层接触的表面突出第二有源层的厚度，其长度在50-1,000nm的范围内，并且具有长宽比为15以下。第二活性层含有有机材料，其厚度为针状无机氧化物半导体结构的长度的2倍以下。

2. 发明专利

JP2013179181A Organic photoelectric conversion element 审中-公开
标题翻译：有机光电转换元件
公开(公告)号：JP2013179181A
公开(公告)日：2013-09-09
申请号：JP2012042260
申请日：2012-02-28
申请人： Sumitomo Chemical Co Ltd , 住友化学株式会社 , Osaka Univ , 国立大学法人大阪大学
发明人： MATSUMURA MICHIO , ONISHI TOSHIHIRO
IPC分类号： H01L51/42
CPC分类号： Y02E10/549
摘要： PROBLEM TO BE SOLVED: To provide an organic photoelectric conversion element which has a heterojunction-type active layer and is excellent in photoelectric conversion efficiency.SOLUTION: An organic photoelectric conversion element comprises: a first electrode; a second electrode; and a first active layer and a second active layer abutting against the first active layer which are provided between the first electrode and the second electrode. The first active layer contains a first active material as an organic material, and the second active layer contains a second active material. Electrons or holes are injected from the first active layer to the second active layer. Excitons generated by photoexcitation in the first or second active layer have a diffusion length of at least 20 nm in the first or second active layer.
摘要翻译：要解决的问题：提供具有异质结型有源层的有机光电转换元件，并具有优异的光电转换效率。有机光电转换元件包括：第一电极; 第二电极; 以及设置在第一电极和第二电极之间的抵靠第一有源层的第一有源层和第二有源层。第一活性层含有作为有机材料的第一活性物质，第二活性层含有第二活性物质。电子或空穴从第一活性层注入到第二活性层。在第一或第二活性层中通过光激发产生的激子在第一或第二活性层中具有至少20nm的扩散长度。

3. 发明专利

JP2010010636A Impurity analysis method in depth direction of semiconductor wafer by electrochemical method 审中-公开
标题翻译：通过电化学方法对半导体波长深度方向的强度分析方法
公开(公告)号：JP2010010636A
公开(公告)日：2010-01-14
申请号：JP2008187871
申请日：2008-06-24
申请人： Osaka Univ , Purex Corp , 国立大学法人大阪大学 , 株式会社ピュアレックス
发明人： MATSUMURA MICHIO , RI KARYU , INAGAKI SEIICHI
IPC分类号： H01L21/66
摘要： PROBLEM TO BE SOLVED: To provide a pretreatment method which is an analysis method of metal impurities of a silicon wafer capable of analyzing impurities in one silicon wafer with high sensitivity in a short period of time without bringing contamination from an external, and which is for measuring the metal impurities in an optional depth at an optional part on a surface of the one silicon wafer.
SOLUTION: A platinum needle is vertically set on an optional measurement part of the one cleaned silicon wafer surface. A vertical hole is opened on the silicon wafer by dropping etchant on a tip of the needle and applying a voltage. The etchant in the hole is recovered, and a volume of the recovered etchant is measured to analyze by various minor constituent analyzing devices.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种预处理方法，该预处理方法是能够在短时间内以高灵敏度分析一个硅晶片中的杂质的硅晶片的金属杂质的分析方法，而不会引起外部污染，以及其用于在一个硅晶片的表面上的可选部分处以可选深度测量金属杂质。
解决方案：将铂针垂直设置在一个清洁的硅晶片表面的可选测量部分上。通过在针尖上滴加蚀刻剂并施加电压，在硅晶片上打开垂直孔。回收孔中的蚀刻剂，并测量回收的蚀刻剂的体积以通过各种次要成分分析装置进行分析。版权所有（C）2010，JPO＆INPIT

4. 发明专利

JP2008177400A Determining method of adding quantity of fullerenes 审中-公开
标题翻译：确定满足FULLERENES数量的方法
公开(公告)号：JP2008177400A
公开(公告)日：2008-07-31
申请号：JP2007010119
申请日：2007-01-19
申请人： Dainippon Printing Co Ltd , Osaka Univ , 国立大学法人大阪大学 , 大日本印刷株式会社
发明人： MATSUMURA MICHIO , OSASA TAKAHIRO , SUZUKI HIROYUKI
IPC分类号： H01L51/42
CPC分类号： Y02E10/549
摘要： PROBLEM TO BE SOLVED: To provide a method of determining the adding quantity of the fullerenes contained in an organic film whereby an organic thin-film solar battery having high photoelectric converting efficiency is formed. SOLUTION: The impedance of a laminate wherein a positive-hole deriving electrode, an organic film including fullerenes and an electron donating material, and an electron deriving electrode are laminated in succession is measured in darkness. Then, the impedance is analyzed by a Modulus Plot method and an extent of the adding quantity of the fullerenes contained in the organic film is determined to obtain a curve including two circular arcs. Further, based on the extent of the adding quantity of the fullerenes, the adding quantity of the fullerenes whereby the organic thin-film solar battery having a high photoelectric converting efficiency is formed is determined. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种确定有机膜中所含富勒烯的添加量的方法，由此形成具有高光电转换效率的有机薄膜太阳能电池。解决方案：在黑暗中测量其中将空穴导出电极，包括富勒烯和给电子材料的有机膜以及电子衍射电极的层压体的阻抗相继层叠。然后，通过模量绘图法分析阻抗，并确定包含在有机膜中的富勒烯的添加量的程度以获得包括两个圆弧的曲线。此外，基于富勒烯的添加量的程度，确定形成具有高光电转换效率的有机薄膜太阳能电池的富勒烯的添加量。版权所有（C）2008，JPO＆INPIT

5. 发明专利

JP2008311597A Method for analyzing impurity in depth direction of silicon wafer 审中-公开
标题翻译：用于分析硅砂深度方向的污染物的方法
公开(公告)号：JP2008311597A
公开(公告)日：2008-12-25
申请号：JP2007179011
申请日：2007-06-12
申请人： Osaka Univ , Purex Corp , 国立大学法人大阪大学 , 株式会社ピュアレックス
发明人： MATSUMURA MICHIO , INAGAKI SEIICHI , TOKUTAKE FUMIO , IMAI SHIGENORI , RI KARYU
IPC分类号： H01L21/66
摘要： PROBLEM TO BE SOLVED: To provide a method for analyzing metal impurities of a silicon wafer, analyzing impurities in the silicon wafer of one sheet, without any introduction of contamination from the outside with excellently high sensitivity and in a short time, which is a pre-treatment method for measuring metal impurities at an arbitrary depth at an arbitrary place of the silicon wafer surface of one sheet.
SOLUTION: In the method for analyzing impurities, the impurities are analyzed by measuring a volume of sucked recovered solution with a hydrofluoric acid applied from pores of the silicon wafer of one sheet treated by a pre-treatment technology in which homogeneous pores are formed to the depth direction of the silicon wafer by using a wet chemical etching solution method called as an electroless deposition method, and by analyzing by an inductive coupled plasma mass spectrometry or an ICP mass spectrometry.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：解决问题的方法：为了提供一种用于分析硅晶片的金属杂质的方法，分析一片硅晶片中的杂质，而不会以极高的灵敏度和短时间从外部引入污染物，其中是在一片硅晶片表面的任意位置测量任意深度的金属杂质的预处理方法。解决方案：在分析杂质的方法中，通过用从预处理技术处理的一片的硅晶片的孔中施加的氢氟酸测量吸收的回收溶液的体积来分析杂质，其中均匀的孔是通过使用被称为无电解沉积法的湿化学蚀刻溶液法，通过感应耦合等离子体质谱法或ICP质谱法进行分析，形成硅晶片的深度方向。版权所有（C）2009，JPO＆INPIT

6. 发明专利

JP2007194485A Manufacturing method of silicon substrate for solar battery 审中-公开
标题翻译：太阳能电池用硅基板的制造方法
公开(公告)号：JP2007194485A
公开(公告)日：2007-08-02
申请号：JP2006012669
申请日：2006-01-20
申请人： Kansai Tlo Kk , Osaka Univ , 国立大学法人大阪大学 , 関西ティー・エル・オー株式会社
发明人： MATSUMURA MICHIO , TSUJINO KAZUYA , TSURU SHINSUKE
IPC分类号： H01L31/04 , H01L21/306
CPC分类号： Y02E10/50
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing method of a silicon substrate wherein the unevenness of a submicron order is formed on its surface having the unevenness of a micron order in excellent mass productivity. SOLUTION: The manufacturing method of a silicon substrate for solar batteries has a process for preparing the silicon substrate having on its surface a formed texture comprising the unevenness whose difference of altitude is 1-20 μm, a process (a) for etching the substrate by the mixed aqueous solution of an oxidant with hydrofluoric acid after subjecting the substrate having the texture to an electroless plating using metal particles, and a process (b) for etching the substrate by the mixed aqueous solution of an oxidant with hydrofluoric acid which contains metal ions. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种硅基板的制造方法，其中在其具有微米级不均匀性的表面上形成亚微米级的不均匀性，具有优异的批量生产率。解决方案：太阳能电池用硅衬底的制造方法具有制造硅衬底的工艺，该衬底在其表面上具有形成的纹理，其包括高差为1-20μm的不均匀性，蚀刻工艺（a）在使用金属粒子对具有纹理的基板进行无电解镀覆之后，通过氧化剂与氢氟酸的混合水溶液的底物，以及通过氧化剂与氢氟酸的混合水溶液蚀刻基材的工序（b），（b）含有金属离子。版权所有（C）2007，JPO＆INPIT

7. 发明专利

JP2014045030A Method for forming pore in crystal substrate, and functional device having wiring and piping in crystal substrate 有权
标题翻译：在晶体衬底中形成孔的方法，以及在晶体衬底中具有接线和管线的功能器件
公开(公告)号：JP2014045030A
公开(公告)日：2014-03-13
申请号：JP2012185715
申请日：2012-08-24
申请人： Osaka Univ , 国立大学法人大阪大学
发明人： MATSUMURA MICHIO , NAGATA DAICHI , KUGIMIYA KOICHI
IPC分类号： H01L21/302 , B81C1/00 , H01L21/306
摘要： PROBLEM TO BE SOLVED: To provide a method for forming a pore having arc-shaped, L-shaped or spiral-shaped cross-section in depth direction of a crystal substrate with high aspect ratio and at low cost in a simple process.SOLUTION: Disclosed is a method for forming pores in a crystal substrate 1 whose main component is composed of silicon. On the surface of the crystal substrate 1, metal films 2, 3 are arranged which are formed by making a plurality of kinds of metals adjacent to each other and bringing them into close contact with the crystal substrate, and metal films arranged on the surface thereof are chemically etched. Moreover, a functional device is formed by utilizing the pores.
摘要翻译：要解决的问题：提供一种在高纵横比下以低成本形成具有圆形，L形或螺旋状横截面的孔的深度方向的方法，并且以简单的方法成本低。公开了一种在主要成分由硅构成的晶体基板1中形成孔的方法。在晶体基板1的表面上，通过使多个金属彼此相邻并使其与晶体基板紧密接触而形成金属膜2,3，并且在其表面上配置金属膜被化学蚀刻。此外，通过利用孔形成功能装置。

8. 发明专利

JP2008243850A Method of processing workpiece and wiring formation method, and method of manufacturing semiconductor substrate 有权
标题翻译：工件加工方法和制造半导体基板的方法
公开(公告)号：JP2008243850A
公开(公告)日：2008-10-09
申请号：JP2007077760
申请日：2007-03-23
申请人： Osaka Univ , Sharp Corp , シャープ株式会社 , 国立大学法人大阪大学
发明人： IMAI SHIGENORI , MATSUMURA MICHIO , TSUJINO KAZUYA , RI KARYU
IPC分类号： H01L21/3063 , C25F3/00 , H01L21/316 , H01L21/3205 , H01L23/52
摘要： PROBLEM TO BE SOLVED: To provide a method of processing a workpiece capable of easily processing the workpiece in a desired shape without giving mechanical damage and thermal damage. SOLUTION: A sample 1 made of at least one type of material selected from a group comprising a semiconductor including silicon, silicon carbide, and group III-V elements is used as a workpiece. The sample 1 is immersed into a processing liquid 8 comprising a solution containing hydrofluoric acid or a fluoride ion. In the processing liquid 8, the workpiece is brought into contact with a wire 2 having a layer made of a catalyst in the oxidation reaction of the material at least on the surface and an electrochemical reaction is generated at the contact section with the sample 1 with the wire 2 as a positive electrode, thus oxidizing the contact section with the wire 2 in the material 1 for dissolving into the processing liquid 8, moving the wire 2 with gravity following the dissolution of the sample 1, and cutting the sample 1 or forming a cut in the sample 1. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种处理能够容易地以期望的形状加工工件的工件的方法，而不产生机械损伤和热损伤。解决方案：使用从包括硅，碳化硅和III-V族元素的半导体的组中选择的至少一种材料制成的样品1作为工件。将样品1浸入包含含有氢氟酸或氟离子的溶液的处理液8中。在处理液8中，工件在材料的至少表面的氧化反应中与具有由催化剂形成的层的导线2接触，并且在与样品1的接触部分处产生电化学反应，电线2作为正极，由此将用于溶解在处理液体8中的材料1中的线材2的接触部分氧化，在样品1溶解后使引线2重力移动，并切割样品1或形成（C）2009年，JPO＆INPIT

9. 发明专利

JP2008243838A Method of processing workpiece and wiring formation method, and method of manufacturing semiconductor substrate 有权
标题翻译：工件加工方法和制造半导体基板的方法
公开(公告)号：JP2008243838A
公开(公告)日：2008-10-09
申请号：JP2007077609
申请日：2007-03-23
申请人： Osaka Univ , Sharp Corp , シャープ株式会社 , 国立大学法人大阪大学
发明人： IMAI SHIGENORI , MATSUMURA MICHIO , TSUJINO KAZUYA , RI KARYU
IPC分类号： H01L21/306 , H01L21/316 , H01L21/3205 , H01L23/52
摘要： PROBLEM TO BE SOLVED: To provide a method of processing a workpiece capable of easily processing the workpiece in a desired shape without giving mechanical damage and thermal damage. SOLUTION: A sample 1 made of at least one type of material selected from a group comprising a semiconductor including silicon, silicon carbide, and group III-V elements is used as a workpiece. The sample 1 is immersed into a processing liquid 8 comprising a solution containing an oxidizing agent, and hydrofluoric acid or a fluoride ion. In the processing liquid 8, the workpiece is brought into contact with a wire 2 having a layer made of a catalyst in the oxidation reaction of the material at least on the surface, thus oxidizing the contact section with the wire 2 in the material 1 for dissolving into the processing liquid 8, moving the wire 2 with gravity following the dissolution of the sample 1, and cutting the sample 1 or forming a cut in the sample 1. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种处理能够容易地以期望的形状加工工件的工件的方法，而不产生机械损伤和热损伤。解决方案：使用从包括硅，碳化硅和III-V族元素的半导体的组中选择的至少一种材料制成的样品1作为工件。将样品1浸入包含含有氧化剂和氢氟酸或氟离子的溶液的处理液8中。在处理液8中，工件在材料的至少表面的氧化反应中与具有由催化剂制成的层的导线2接触，从而在材料1中与导线2氧化接触部分溶解在处理液8中，在样品1溶解后使重力移动线2，并切割样品1或在样品1中形成切口。版权所有（C）2009，JPO＆INPIT

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式