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    • 1. 发明专利
    • Method and apparatus for measuring osmotic pressure
    • 测量动态压力的方法和装置
    • JPS6150062A
    • 1986-03-12
    • JP17160884
    • 1984-08-20
    • Sumitomo Bakelite Co Ltd
    • IDEMOTO MORIHITONOGUCHI YASUO
    • G01N13/04G01N29/00G01N29/024
    • G01N13/04G01N29/024G01N2291/02881
    • PURPOSE:To measure the osmotic pressure of a sample solution simply and quickly, by directly measuring the propagation speed of ultrasonic waves in the sample solution and the temperature of the sample solution. CONSTITUTION:A sensor section 2 is emmersed into a sample solution, an ultrasonic wave is transmitted from an ultrasonic transducer 4 and reflected waves from a passive reflector 3 received with the transducer 4 again. When the distance between the passive reflector and the transducer 4 is represented by L0 and the time to the transmission of the subsequent ultrasonic pulse after the reception of the reflected wave T0, the propagation speed V of ultrasonic waves in the sample solution can be calculated by the formula by measuring the time (t) spent in the repetition of the transmission by n+1 times. This information is inputted into a CPU12. On the other hand, changes in the voltage of a temperature sensor 5 are converted into temperature information with a temperature measuring circuit 9 to be inputted into the CPU12. The constant of a multi- degree polynomial for determining osmotic pressure of a sample solution with the temperature and propagation speed as variables is memorized in a memory circuit 13 and it is used to determine the osmotic pressure in the sample solution.
    • 目的:通过直接测量样品溶液中超声波的传播速度和样品溶液的温度,简单快速地测量样品溶液的渗透压。 构成:将传感器部分2浸入样品溶液中,再次从超声波换能器4传送超声波和从与换能器4接收的被动反射体3的反射波。 当无源反射器和换能器4之间的距离由L0表示,并且在接收到反射波T0之后传输随后的超声波脉冲的时间时,样品溶液中的超声波的传播速度V可以通过 该公式通过测量在n + 1次重复传输中花费的时间(t)。 该信息被输入到CPU12中。 另一方面,温度传感器5的电压的变化被转换为具有温度测量电路9的温度信息,以输入到CPU12中。 用于将温度和传播速度作为变量确定的样品溶液的渗透压的多级多项式的常数存储在存储器电路13中,并且用于确定样品溶液中的渗透压。
    • 2. 发明专利
    • Moisture resisting type ultrasonic wave sensor
    • 湿度电阻型超声波传感器
    • JPS6166126A
    • 1986-04-04
    • JP18801884
    • 1984-09-10
    • Sumitomo Bakelite Co Ltd
    • IDEMOTO MORIHITONOGUCHI YASUO
    • G01N29/28G01H11/08G01N29/00G01N29/024
    • G01N29/024
    • PURPOSE:To improve moisture resistance, in an ultrasonic wave sensor comprising an ultrasonic wave vibrator, a holder and a sealing material, by forming a film of a conducting or non-conducting material on the surface of the sealing material, and preventing the intrusion of moisture. CONSTITUTION:An ultrasonic wave vibrator 3 is stuck to a holder 2 by a bonding agent. The electrodes of the vibrator 3 are connected to terminals 6 and 7 by cables 4 and 5. The terminals 6 and 7 are fixed by a substrate 8. The upper part of the substrate is sealed by a sealing material 9. A thin film 10 is formed on the surface of the sealing material 9 and the like. The material of the thin film is a non-conducting material, which can be formed, by e.g., vacuum evaporation sputtering, ion plating and the like. SiO, SiO2 and fluorine resins such as polytetrafluoroethylene and the like are used. A cover is applied on the part of the terminals 6 and 7, which are protruded to the outside of the holder 2, so that a thin film is no formed, and the thin film 10 is formed. Thus the intrusion of moisture is prevented and the moisture resistance can be improved.
    • 目的:为了提高防潮性,在包含超声波振动器,保持器和密封材料的超声波传感器中,通过在密封材料的表面上形成导电材料或非导电材料的膜,并防止侵入 湿气。 构成:超声波振动器3通过粘合剂粘合到保持器2。 振动器3的电极通过电缆4和5连接到端子6和7.端子6和7由基板8固定。基板的上部被密封材料9密封。薄膜10是 形成在密封材料9的表面上等。 薄膜的材料是非导电材料,其可以通过例如真空蒸发溅射,离子电镀等形成。 使用SiO,SiO 2和氟树脂如聚四氟乙烯等。 在端子6和7上突出到保持器2的外部的部分上施加盖,使得不形成薄膜,形成薄膜10。 因此防止了水分的侵入,并且可以提高耐湿性。