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1. 发明专利

JP2013189318A Method for producing raw material for silicon-based solar cell 审中-公开
标题翻译：用于生产硅基太阳能电池原料的方法
公开(公告)号：JP2013189318A
公开(公告)日：2013-09-26
申请号：JP2010141164
申请日：2010-06-22
申请人： Sumco Corp , 株式会社Sumco
发明人： MORITA ETSURO , IZUMI TATSUNORI , FUKUDA YASUO , OKITA KENJI , ENDO MITSUHIRO
IPC分类号： C01B33/037 , C02F11/00 , C02F11/12
CPC分类号： C01B33/037
摘要： PROBLEM TO BE SOLVED: To provide a method for producing a raw material for a silicon-based solar cell, capable of producing a melt raw material for a silicon-based solar cell in a short time from a silicon sludge generated in various types of silicon working processes and contaminated with metals in high concentrations.SOLUTION: Meal impurities of ≥1×10atoms/cmcontaminating a silicon powder in a silicon sludge are removed by cleaning; the silicon sludge after vacuum drying is charged in a vacuum chamber upstream of a melting chamber of an electron beam apparatus, and vacuum dried; then, the silicon sludge is moved to the melting chamber, and irradiated with electron beams and melted. Thereby, a melt raw material for a silicon-based solar cell can be produced in a short time from the silicon sludge generated in various silicon working processes and contaminated with metals in high concentrations.
摘要翻译：要解决的问题：提供一种用于生产硅基太阳能电池原料的方法，其能够在短时间内从在各种硅中产生的硅污泥生产用于硅基太阳能电池的熔融原料工作流程和高浓度金属污染。解决方案：通过清洗去除硅污泥中硅粉的≥1×10原子/厘米的杂质杂质; 将真空干燥后的硅污泥装入电子束装置的熔融室上游的真空室内，真空干燥; 然后将硅污泥移动到熔化室，并用电子束照射并熔化。因此，硅系太阳能电池用熔融原料能够在短时间内从各种硅加工工序中生成的硅污泥中高浓度地被金属污染。

2. 发明专利

JP2012024866A Method of collecting wire saw cutting sludge and device therefor 审中-公开
标题翻译：收集线切割泥浆的方法及其设备
公开(公告)号：JP2012024866A
公开(公告)日：2012-02-09
申请号：JP2010164375
申请日：2010-07-21
申请人： Sumco Corp , 株式会社Sumco
发明人： ENDO MITSUHIRO , MORITA ETSURO , IZUMI TATSUNORI
IPC分类号： B24B27/06 , B24B55/12 , B28D5/04 , B28D7/02 , H01L21/304
摘要： PROBLEM TO BE SOLVED: To provide a method of collecting wire saw cutting sludge capable of preventing the cutting waste of an adhesive layer and the cutting waste of a fixed plate from being mixed into silicon sludge for reusable resources.SOLUTION: After starting cutting of silicon ingots, the method of collecting the wire saw cutting sludge separately collects the silicon sludge for the resources generated immediately before a wire row reaches the adhesive layer, and waste sludge including the cutting waste of the adhesive layer and the cutting sludge of the fixed plate generated in slices thereafter. Thereby, the method can prevent the cutting waste of the adhesive layer and the cutting waste of the fixed plate from being mixed into the silicon sludge for the reusable resources.
摘要翻译：要解决的问题：提供一种收集线切割污泥的方法，其能够防止粘合剂层的切割浪费和固定板的切割废弃物被混入用于可再利用资源的硅污泥中。
解决方案：开始切割硅锭后，收集线锯切割污泥的方法分别收集硅污泥，以便在丝线到达粘合剂层之前立即产生的资源，以及废弃污泥，包括粘合剂的切割废料层和其后的切片产生的固定板的切割污泥。因此，该方法可以防止粘合剂层的切割浪费和固定板的切割废料混入用于可再利用资源的硅污泥中。版权所有（C）2012，JPO＆INPIT

3. 发明专利

JP2011230232A Quality control method of grinding wheel in grinding work 审中-公开
标题翻译：砂轮研磨轮质量控制方法
公开(公告)号：JP2011230232A
公开(公告)日：2011-11-17
申请号：JP2010102911
申请日：2010-04-28
申请人： Sumco Corp , 株式会社Sumco
发明人： HIRANO KATSUYA , MORITA ETSURO
IPC分类号： B24B7/22 , H01L21/304
摘要： PROBLEM TO BE SOLVED: To provide a quality control method of a grinding wheel in grinding work, capable of detecting a grinding mark caused by a fixed abrasive grain of a large grain size.SOLUTION: While determining the reference surface area of silicon powder in silicon sludge generated when grinding a grinding object by a reference grinding wheel, the measured surface area of the silicon powder in the silicon sludge generated when grinding the same grinding object as the grinding object by using the grinding wheel, is determined. Afterwards, since quality of the grinding wheel is detected from a difference between the measured surface area and the reference surface area, the grinding mark caused by the fixed abrasive grain of a large diameter can be easily detected from a change in the surface area of the silicon powder of the silicon sludge.
摘要翻译：要解决的问题：为了提供研磨工作中的砂轮的质量控制方法，能够检测由大粒径的固定磨粒引起的磨痕。
解决方案：在通过参考砂轮研磨研磨对象时，确定在硅污泥中产生的硅粉末的参考表面积时，测量在与相同研磨物体磨削相同的研磨物体时产生的硅污泥中的硅粉表面积通过使用砂轮研磨物体，确定。之后，由于从被测表面积与基准面积之间的差异来检测砂轮的品质，因此可以容易地从大直径的固定磨粒的变化引起由大直径的固定磨粒引起的磨痕硅粉硅粉。版权所有（C）2012，JPO＆INPIT

4. 发明专利

JP2010153844A Method of producing wafer for active layer 审中-公开
标题翻译：生产活性层的方法
公开(公告)号：JP2010153844A
公开(公告)日：2010-07-08
申请号：JP2009269536
申请日：2009-11-27
申请人： Sumco Corp , 株式会社Sumco
发明人： NISHIHATA HIDEKI , ENDO AKIHIKO , MORITA ETSURO
IPC分类号： H01L21/304
CPC分类号： H01L21/02008 , H01L21/02024
摘要： PROBLEM TO BE SOLVED: To provide a method of producing a wafer for active layer in which an active layer having a good flatness can be produced easily and inexpensively, particularly when a large-size wafer having a diameter of not less than 300 mm is used.
SOLUTION: The method includes a slicing step of cutting out a disc-shaped wafer from a single crystal silicon ingot (Fig.1(a)), a beveling step of beveling an edge portion of the sliced wafer (Fig.1(b)), a grinding step for grinding each surface of the beveled wafer (Fig.1(c)), an etching step of etching the surface of the ground wafer (Fig.1(d)) and a single-sided mirror-polishing step of mirror-polishing only one surface of the etched wafer (Fig.1(e)).
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：解决的问题：提供一种制造有源层的晶片的方法，其中可以容易且廉价地制造具有良好平坦度的有源层，特别是当直径不小于300的大尺寸晶片时 mm。解决方案：该方法包括从单晶硅锭切割圆盘状晶片的切片步骤（图1（a）），将切片晶片的边缘部分倾斜的斜切步骤（图1 （b）），用于研磨斜面晶片的每个表面的磨削步骤（图1（c）），蚀刻步骤，蚀刻接地晶片的表面（图1（d））和单面镜仅抛光蚀刻晶片的一个表面的抛光步骤（图1（e））。版权所有（C）2010，JPO＆INPIT

5. 发明专利

JP2007194336A Method for manufacturing semiconductor wafer 审中-公开
标题翻译：制造半导体波形的方法
公开(公告)号：JP2007194336A
公开(公告)日：2007-08-02
申请号：JP2006009881
申请日：2006-01-18
申请人： Sumco Corp , 株式会社Sumco
发明人： MATSUMOTO KOJI , HORA TOMOYUKI , ENDO AKIHIKO , MORITA ETSURO , NINOMIYA MASAHARU
IPC分类号： H01L21/20
CPC分类号： H01L21/7624 , H01L21/02532 , H01L21/0262
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing semiconductor wafer to form, on an insulating layer within an SOI wafer, a lattice-relaxed or a partly lattice-relaxed SiGe layer including less amount of defect, and also including uniform and high concentration Ge.
SOLUTION: The method for manufacturing semiconductor wafer includes the step of forming a lattice-relaxed or a partly lattice-relaxed SiGe layer 5 on an insulating layer 2 within an SOI wafer 4. In the step of forming the lattice-relaxed SiGe layer 5, heat treatment is conducted under the oxidation atmosphere after at least upper layer side 7 of the SiGe layer 6 is formed on the SOI layer 3 in the gradient of Ge concentration that is gradually reduced toward the surface 7a thereof.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种制造半导体晶片的方法，以在SOI晶片内的绝缘层上形成包含较少量缺陷的晶格弛豫或部分晶格弛豫的SiGe层，并且还包括均匀的和高浓度Ge。解决方案：制造半导体晶片的方法包括在SOI晶片4内的绝缘层2上形成晶格弛豫或部分晶格弛豫的SiGe层5的步骤。在形成晶格弛豫SiGe的步骤中层5在SiGe层6的至少上层侧7以朝向其表面7a逐渐减小的Ge浓度的梯度形成在SOI层3上之后，在氧化气氛下进行热处理。版权所有（C）2007，JPO＆INPIT

6. 发明专利

JP2007220974A Wafer and method of manufacturing same 有权
标题翻译：其制造方法及其制造方法
公开(公告)号：JP2007220974A
公开(公告)日：2007-08-30
申请号：JP2006041101
申请日：2006-02-17
申请人： Sumco Corp , 株式会社Sumco
发明人： MORITA ETSURO , FUJIE KAZUO , ONO ISOROKU
IPC分类号： H01L21/304 , B24D11/00
CPC分类号： B24B37/042 , B24D13/147
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing a wafer which is capable of effectively removing minute projections of not less than 1 μm on the rear surface of the wafer generated due to retaining by a susceptor, while maintaining excellent flatness in the heat treatment process of the wafer, and the wafer manufactured by the manufacturing method. SOLUTION: In a polishing process for smoothing the predetermined surface of the wafer 6 while supplying polishing solution on a fixed abrasive grain polishing cloth 2, the fixed abrasive grain polishing cloth is provided with urethane bonding material constituted of soft segment having multi-functions isocyanate and hard segment having multi-functions polyole while having expansion ratio of 1.1-4 times, and silica having an average grain size within the range of 0.2-10 μm. In this case, the occupying ratio of the hard segment in the urethane bonding material is 40-55% in molecular weight, and the occupying volumetric ratio of the silica in the whole of fixed abrasive grain polishing cloth is within the range of 20-60% while the shore D-hardness of the fixed abrasive grain polishing cloth is 40-80. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种制造晶片的方法，其能够有效地除去由于基座保持而产生的晶片的后表面上的不小于1μm的微小突起，同时保持优异的平坦度晶片的热处理工艺和通过制造方法制造的晶片。解决方案：在将抛光溶液供给到固定磨粒抛光布2上的同时平滑晶片6的预定表面的抛光工艺中，固定磨粒抛光布设置有由具有多层结构的软段构成的聚氨酯粘结材料，具有多功能聚烯烃的异氰酸酯和硬链段，发泡倍率为1.1-4倍，二氧化硅的平均粒径在0.2-10μm的范围内。在这种情况下，聚氨酯接合材料中的硬链段的占有率分子量为40-55％，整个固定磨粒抛光布中二氧化硅的占有体积比在20-60 ％，固定磨粒抛光布的岸硬度为40-80。版权所有（C）2007，JPO＆INPIT

7. 发明专利

JP2006216807A Process for producing soi substrate 有权
标题翻译：生产SOI衬底的工艺
公开(公告)号：JP2006216807A
公开(公告)日：2006-08-17
申请号：JP2005028502
申请日：2005-02-04
申请人： Sumco Corp , 株式会社Sumco
发明人： ENDO AKIHIKO , KUSABA TATSUMI , OKUDA HIDEHIKO , MORITA ETSURO
IPC分类号： H01L27/12 , H01L21/02
CPC分类号： H01L21/76254
摘要： PROBLEM TO BE SOLVED: To make the thickness of an SOI film uniform by reducing variations in the film thickness, without causing damages to the SOI layer.
SOLUTION: The process for producing an SOI substrate 11 comprises a step of forming an oxide film 21 on the surface of a first silicon substrate 14, a step of forming an ion implantation region 16 in the first silicon substrate 14 by implanting hydrogen ions, a step of laying the first silicon substrate 14 on top of a second silicon substrate 12 via an oxide film 21, a step of making a bonding substrate 18 on which an SOI layer 13 is formed by performing a first heat treatment at a predetermined temperature, thereby separating the first silicon substrate 14 in the ion implanted region 16, a step of smoothing the separation plane of the SOI layer 13 by wet etching, a step of reducing damage by performing a second heat treatment of the bonding substrate 18 in oxygen atmosphere of 750-900°C, and a step of reinforcing the bonding strength through a third heat treatment of 900-1,200°C.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：为了使SOI膜的厚度通过减小膜厚度的变化而均匀，而不会对SOI层造成损害。解决方案：SOI衬底11的制造方法包括在第一硅衬底14的表面上形成氧化膜21的步骤，通过注入氢气在第一硅衬底14中形成离子注入区16的步骤离子，通过氧化膜21将第一硅衬底14放置在第二硅衬底12的顶部上的步骤，通过以预定的方式进行第一热处理来制造其上形成有SOI层13的接合衬底18的步骤从而分离离子注入区域16中的第一硅衬底14，通过湿蚀刻平滑SOI层13的分离面的步骤，通过对氧接触衬底18进行第二次热处理来减少损伤的步骤气氛为750-900℃，以及通过900-1200℃的第三次热处理来增强接合强度的步骤。版权所有（C）2006，JPO＆NCIPI

8. 发明专利

JP2012193070A Method for producing raw material for silicon-based solar cell 审中-公开
标题翻译：用于生产硅基太阳能电池原料的方法
公开(公告)号：JP2012193070A
公开(公告)日：2012-10-11
申请号：JP2011058024
申请日：2011-03-16
申请人： Sumco Corp , 株式会社Sumco
发明人： KANEHARA TAKAHIRO , UBUKATA TAKEFUMI , MORITA ETSURO
IPC分类号： C01B33/037
摘要： PROBLEM TO BE SOLVED: To provide a method for producing a raw material for a silicon-based solar cell, by which silicon oxide-based foreign matter floating on the surface of a melt of silicon sludge can be evaporated and vanished for a short time.SOLUTION: A melt prepared from silicon powder as raw material is boiled before pulling out a polycrystalline silicon ingot from the melt by the Czochralski method. By the boiling, oxygen in foreign matter comprising silicon oxide and floating on the surface of the melt is evaporated and the foreign matter is vanished. As a result, when a polycrystalline silicon ingot is pulled out by the Czochralski method, foreign matter comprising silicon oxide does not adhere to the outer peripheral surface of the ingot.
摘要翻译：解决的问题：提供一种用于制造硅基太阳能电池的原料的方法，通过这种硅基太阳能电池的原料漂浮在硅污泥的熔体表面上的氧化硅类杂质可以蒸发并消失短时间。解决方案：以硅粉为原料制备的熔体在通过Czochralski法从熔体中拉出多晶硅锭之前被煮沸。通过沸腾，包含氧化硅的异物中的氧气漂浮在熔体的表面上被蒸发，异物消失。结果，当通过切克劳斯基法（Czochralski）方法拉出多晶硅锭时，含有氧化硅的异物不粘附到锭的外周表面。版权所有（C）2013，JPO＆INPIT

9. 发明专利

JP2012025606A Method for cleaning silicon sludge with filtration under decompression 审中-公开
标题翻译：在降解过程中清洗硅渣的方法
公开(公告)号：JP2012025606A
公开(公告)日：2012-02-09
申请号：JP2010164372
申请日：2010-07-21
申请人： Sumco Corp , 株式会社Sumco
发明人： IZUMI TATSUNORI , MORITA ETSURO , FUKUDA YASUO , OKITA KENJI , ENDO MITSUHIRO
IPC分类号： C01B33/02 , B01D29/01 , B01D37/04
摘要： PROBLEM TO BE SOLVED: To provide a method for cleaning silicon sludge under decompression which can prevents choke of a filter during filtration under decompression.SOLUTION: The condition of filtration is set so that the mean particle diameter of solid contents containing silicon powder S falls within a range between 1 and 10 μm, the concentration of solid contents in a cleaning liquid of a rinse liquid falls within a range between 1 to 10 wt.%, and the mesh size of a mesh filter falls within a range between 5 and 10 times larger than the size of the solid contents. With this condition, negative pressure generated just above each mesh 14a gathers the solid contents to form an aggregate dome 15 of the solid contents right after the initiation of filtration under decompression. Porosity of the dome 15 prevents choke of the mesh filter during filtration under decompression.
摘要翻译：要解决的问题：提供一种在减压下清洗硅污泥的方法，其可以在减压过程中防止过滤器的扼流圈。解决方案：将过滤条件设定为使含硅粉末S的固体成分的平均粒径在1〜10μm的范围内，冲洗液的清洗液中的固体成分浓度落入范围在1至10重量％之间，网筛的网眼尺寸在固体内容物的尺寸的5至10倍之间的范围内。在这种条件下，正好在每个网状物14a上方产生的负压收集固体内容物，以在减压开始过滤之后立即形成固体内容物的聚集圆顶15。圆顶15的孔隙度在减压过程中防止网状过滤器的扼流圈。版权所有（C）2012，JPO＆INPIT

10. 发明专利

JP2011225399A Manufacturing method of raw material for silicon solar cell 审中-公开
标题翻译：硅太阳能电池原料的制造方法
公开(公告)号：JP2011225399A
公开(公告)日：2011-11-10
申请号：JP2010097028
申请日：2010-04-20
申请人： Sumco Corp , 株式会社Sumco
发明人： UBUKATA TAKEFUMI , KANEHARA TAKAHIRO , KAWANO SHIGERU , MORITA ETSURO
IPC分类号： C01B33/02 , C02F11/00 , C02F11/12
CPC分类号： Y02W10/37
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing method of a raw material for a silicon solar cell which utilizes non-solidifying sandy silicon and manufactures a fused raw material with low oxygen content for a silicon solar cell easily and inexpensively.SOLUTION: Both the sandy silicon and a silicon sludge are produced by a silicon processing process, and 20-30 wt.% of concentrated wastewater drained during concentrating the silicon sludge is added and mixed to 60-79 wt.% of sandy silicon with an average particle size of 0.1-1 mm and 1-10 wt.% of silicon sludge containing a fine silicon powder with a maximum particle size of 2 μm or less, and the obtained mixture is solidified. The fused raw material with a low oxygen content for the silicon solar cell is manufactured easily and inexpensively utilizing the non-solidifying sandy silicon thereby.
摘要翻译：要解决的问题：提供一种利用非固化砂硅的硅太阳能电池原料的制造方法，并且容易且廉价地制造具有低氧含量的熔融原料用于硅太阳能电池。解决方案：通过硅加工工艺生产硅砂和硅污泥，并加入20-30重量％浓缩硅污泥中的浓缩废水，并混合至60-79重量％的砂质平均粒径为0.1-1mm的硅和含有最大粒度为2μm以下的细硅粉末的硅污泥的1-10重量％，所得混合物固化。硅太阳能电池的氧含量低的熔融原料通过使用非固化砂硅而容易且廉价地制造。版权所有（C）2012，JPO＆INPIT

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