专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

JP2013079835A Height measuring device for pointed bump 有权
标题翻译：高度测量装置
公开(公告)号：JP2013079835A
公开(公告)日：2013-05-02
申请号：JP2011218993
申请日：2011-10-03
申请人： Soft Works Kk , ソフトワークス株式会社 , Eiko Sangyo Kk , 英光産業株式会社
发明人： SHIOMI TOSHIO
IPC分类号： G01B11/02 , H01L21/60
CPC分类号： H01L2224/11 , H01L2224/1134 , H01L2924/00012
摘要： PROBLEM TO BE SOLVED: To measure the height of a pointed bump of a semiconductor chip.SOLUTION: A surface illumination device 33 is disposed above a semiconductor wafer 21 on which a plurality of semiconductor chips including pointe bumps are formed, and the surface illumination device 33 illuminates the upper surface of the semiconductor wafer 21. A pair of imaging devices 34 and 35 are disposed obliquely above the semiconductor wafer 21 and capture images of the semiconductor chips including the pointed bumps on the semiconductor wafer 21 from the obliquely above position. A computer 36 detects the length of the pointed bump from the bottom to the tip end respectively on the basis of the pair of images captured by the pair of imaging devices 34 and 35, and calculates the height of the pointed bump using the detected pair of lengths and an angle formed between optical axes of the pair of imaging devices 34 and 35 and the upper face of the semiconductor waver 21.
摘要翻译：要解决的问题：测量半导体芯片的尖锐凸起的高度。解决方案：表面照明装置33设置在其上形成有包括尖头凸起的多个半导体芯片的半导体晶片21的上方，并且表面照明装置33照射半导体晶片21的上表面。一对成像器件34和35倾斜地设置在半导体晶片21的上方，并且从倾斜的上方位置捕获包括半导体晶片21上的尖锐凸起的半导体芯片的图像。计算机36基于由一对成像装置34和35捕获的一对图像分别检测从底部到尖端的尖锐凸起的长度，并且使用检测到的一对成像装置计算尖锐凸起的高度长度和一对成像装置34和35的光轴与半导体摇摆21的上表面之间形成的角度。（C）2013，JPO＆INPIT

2. 发明专利

JP2004311715A Measuring method and measuring device of bonding wire 审中-公开
公开(公告)号：JP2004311715A
公开(公告)日：2004-11-04
申请号：JP2003103105
申请日：2003-04-07
申请人： Soft Works Kk , ソフトワークス株式会社
发明人： SHIOMI TOSHIO
IPC分类号： H01L21/60
CPC分类号： H01L2224/45015 , H01L2224/45124 , H01L2224/45144 , H01L2224/78 , H01L2924/00014 , H01L2924/14 , H01L2924/00 , H01L2224/48 , H01L2924/00012
摘要： PROBLEM TO BE SOLVED: To easily and automatically perform measurement relating to a bonding wire by using an inexpensive device.
SOLUTION: A light source 14 and a translucent mirror 13 illuminate the part of a wire 41 on a chip 40 from a direction vertical to the chip upper surface 42. A camera 16 picks up the image of the part of the wire 41. A computer main body 21 acquires a plurality of images of the part of the wire 41 respectively corresponding to different focus positions from the camera 16, while controlling an actuator 17 through a drive circuit 18 and moving and controlling an objective lens 11 in a vertical direction. The computer main body 21 selects the image in which the difference of the contrast between a dark part where the wire 41 is positioned and a bright part where the wire 41 is not positioned is maximum from the plurality of images, and detects the height from the chip upper surface 42 of the wire 41 by the focus position corresponding to the selected image.
COPYRIGHT: (C)2005,JPO&NCIPI

3. 发明专利

JP2005114587A Inspection device and method of silicon wafer 审中-公开
标题翻译：硅片检查装置及方法
公开(公告)号：JP2005114587A
公开(公告)日：2005-04-28
申请号：JP2003350074
申请日：2003-10-08
申请人： Natsume Optical Corp , Soft Works Kk , ソフトワークス株式会社 , 夏目光学株式会社
发明人： SHIOMI TOSHIO , NODA MASAHIKO
IPC分类号： G01B11/30 , G01N21/956 , G06T1/00 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To detect a crack generated on the surface of a silicon wafer with a simple constitution in a short time.
SOLUTION: An optical device 30 comprises an optical fiber 31, an eye lens 32, a pinhole member 33, a half mirror 34 and a collimating lens 35. In the device, parallel light is generated from light emitted from a light source 20, and the surface of the silicon wafer SIL is vertically irradiated therewith. Reflected light A (parallel light) reflected vertically from the silicon wafer SIL is introduced into an imaging camera unit 40 through the collimating lens 35, the half mirror 34 and an imaging lens unit 36. The imaging camera unit 40 images an image of the surface of the silicon wafer SIL by the reflected light. Crack generation is detected by the existence of dark and bright linear parts appearing in the image along the crack resulting from crack generation.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：以简单的结构在短时间内检测在硅晶片的表面上产生的裂纹。解决方案：光学装置30包括光纤31，眼睛透镜32，针孔构件33，半透半反镜34和准直透镜35.在该装置中，从光源发出的光产生平行光 20，并且硅晶片SIL的表面被垂直地照射。从硅晶片SIL垂直反射的反射光A（平行光）通过准直透镜35，半反射镜34和成像透镜单元36被引入成像照相机单元40.成像照相机单元40将表面的图像的硅晶片SIL。裂纹产生是通过存在由裂纹产生而产生的裂缝的图像中存在的暗和亮线性部分来检测的。版权所有（C）2005，JPO＆NCIPI

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式