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1. 发明专利

JP2013129549A Method and system for producing silicon material for solar cell 审中-公开
标题翻译：用于生产太阳能电池用硅材料的方法和系统
公开(公告)号：JP2013129549A
公开(公告)日：2013-07-04
申请号：JP2011278413
申请日：2011-12-20
申请人： Sharp Corp , シャープ株式会社
发明人： WADA KENJI , NAGATA YOSHIHIKO , NAKANO TAKAHIRO , YAMAZAKI YUJI , YAMANE SATOSHI
IPC分类号： C01B33/037 , H01L31/04
CPC分类号： Y02E10/546
摘要： PROBLEM TO BE SOLVED: To provide a method for producing a silicon material for a solar cell, capable of producing a high-purity silicon mass without spending long hours and without causing high cost.SOLUTION: A method for producing a silicon material for a solar cell includes: a step of purifying a silicon material to obtain a silicon mass; a step of measuring at least one of a conductivity type and a specific resistance value in the silicon mass; and a step of determining whether the step of obtaining the silicon mass is continued or not based on measurement results obtained through the step of measuring at least one of the conductivity type and the specific resistance value in the silicon mass.
摘要翻译：要解决的问题：提供一种太阳能电池用硅材料的制造方法，其能够在不花费长时间的情况下制造高纯度硅质量并且不会导致高成本。解决方案：一种用于制造太阳能硅材料的方法电池包括：纯化硅材料以获得硅质量的步骤; 测量硅质量中的导电类型和电阻率值中的至少一种的步骤; 以及基于通过测量硅质量中的至少一种导电类型和电阻率值的步骤获得的测量结果来确定获得硅质量的步骤是否继续的步骤。

2. 发明专利

JP2006104030A Method of purifying silicon 审中-公开
标题翻译：纯化硅的方法
公开(公告)号：JP2006104030A
公开(公告)日：2006-04-20
申请号：JP2004294890
申请日：2004-10-07
申请人： Sharp Corp , シャープ株式会社
发明人： WADA KENJI , HAYAKAWA HISASHI , FUKUYAMA TOSHIAKI , FUJIWARA HIROYASU , OTSUKA YOSHITATSU
IPC分类号： C01B33/037
摘要： PROBLEM TO BE SOLVED: To provide a method of efficiently purifying silicon by improving the removal rate of boron from silicon.
SOLUTION: In the method of purifying silicon, molten silicon (8) containing impurities is held in a crucible (2) and a treating gas is blown into the molten silicon (8). The flow rate of a reducing gas contained in the treating gas is set to ≥0.05 L/hr and ≤1 L/hr per 1 g silicon.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供通过提高硅从硅中的去除率来有效地净化硅的方法。解决方案：在硅的纯化方法中，将含有杂质的熔融硅（8）保持在坩埚（2）中，并将处理气体吹入熔融硅（8）中。包含在处理气体中的还原气体的流量设定为≥0.05L/ hr，并且每1g硅为≤1L/ hr。版权所有（C）2006，JPO＆NCIPI

3. 发明专利

JP2004262746A Method for refining silicon, and silicon 有权
公开(公告)号：JP2004262746A
公开(公告)日：2004-09-24
申请号：JP2003423070
申请日：2003-12-19
申请人： Sharp Corp , シャープ株式会社
发明人： WADA KENJI , FUKUYAMA TOSHIAKI , OTSUKA YOSHITATSU , FUJIWARA HIROYASU
IPC分类号： C01B33/037
摘要： PROBLEM TO BE SOLVED: To provide a method for refining silicon efficiently by increasing the removing rate of boron and silicon obtained by the method.
SOLUTION: The method for refining silicon is that a carbon-containing gas which contains at least a kind selected from the group consisting of carbon monoxide, carbon dioxide and a hydrocarbon is blown into silicon after melting or alternatively that at least one of carbon and silicon carbide is mixed with silicon before and/or after melting. The refined silicon is provided by the refining method.
COPYRIGHT: (C)2004,JPO&NCIPI

4. 发明专利

JP2003068651A Plasma treatment apparatus, plasma cvd system, plasma treatment method, thin film produced using them, substrate, and semiconductor device 审中-公开
标题翻译：等离子体处理装置，等离子体CVD系统，等离子体处理方法，使用其制造的薄膜，基板和半导体器件
公开(公告)号：JP2003068651A
公开(公告)日：2003-03-07
申请号：JP2001253733
申请日：2001-08-24
申请人： Sharp Corp , シャープ株式会社
发明人： INAMASU TAKASHI , WADA KENJI , MORITA HARUYUKI
IPC分类号： H05H1/46 , B01J19/08 , C23C16/509 , H01L21/205 , H01L31/04
CPC分类号： Y02E10/50
摘要： PROBLEM TO BE SOLVED: To solve the problem of plasma treatment being made locally non-uniform by making discharging unstable on the boundry of the central part and peripheral part of a high-frequency electrode by the step of the high-frequency electrode, when the distances of the central part and peripheral part of the high-frequency electrode to a member to be treated and made different by dividing the high-frequency electrode into the central part and the peripheral part for improving in-plane uniformity in large area treatment. SOLUTION: When a divided high-frequency electrode is used, in order to eliminate nonuniformity of plasma treatment in the central part and peripheral part of the electrode, in one arbitrary small electrode of the divided electrode, the distances of a principal face the member to be treated and the face to be treated of the member to be treated are made different continuously, so that uniformity in the plasma treatment can be improved, further, the distances of the principal face of the small electrode and the face to be treated of the member to be treated are controlled to be continuously different, so that plasma treatment can be made uniform, by controlling the distance of the member to be treated and the divided electrode into suitable state corresponding to plasma generation conditions.
摘要翻译：要解决的问题：为了通过高频电极的步骤，通过使高频电极的中心部分和周边部分的边界放电不稳定来解决等离子体处理局部不均匀的问题，当通过将高频电极分割成中心部分和周边部分，将高频电极的中心部分和周边部分的距离与待处理的部件的距离不同，以提高大面积处理中的面内均匀性。解决方案：当使用分频高频电极时，为了消除电极的中心部分和周边部分的等离子体处理的不均匀性，在分离电极的一个任意的小电极中，主体面向构件的距离待处理的被处理物体的面被连续地变化，从而可以提高等离子体处理的均匀性，此外，小电极的主面和被处理面的距离被处理物被控制为连续不同，通过将待处理的构件和分割电极的距离控制在与等离子体产生条件相对应的适当状态，可以使等离子体处理均匀。

5. 发明专利

JP2003059840A Apparatus and method for plasma treatment 审中-公开
标题翻译：用于血浆处理的装置和方法
公开(公告)号：JP2003059840A
公开(公告)日：2003-02-28
申请号：JP2001246148
申请日：2001-08-14
申请人： Sharp Corp , シャープ株式会社
发明人： INAMASU TAKASHI , WADA KENJI , MORITA HARUYUKI
IPC分类号： H05H1/46 , C23C16/509 , H01L21/205
摘要： PROBLEM TO BE SOLVED: To provide an apparatus for plasma treatment, capable of increasing the size of the treatment area, improving the treatment speed and improving the treatment quality.
SOLUTION: The apparatus for plasma treating comprises a reaction vessel 4, a high-frequency electrode 20 provided in the vessel 4, and a dielectric 6 associated with the electrode 20. The electrode 20 has a plurality of small electrodes 21 to 24 separated from each other. High-frequency voltages, applied to at least two of the electrodes 21 to 24, are different in phases from each other. The dielectric 6 is protruded to a plasma-generating atmosphere side with respect to the electrodes 21 to 24. The strength distribution of an electric field which is applied by the electrode 20 can be made uniform by the dielectric 6.
COPYRIGHT: (C)2003,JPO
摘要翻译：要解决的问题：提供一种等离子体处理装置，能够增加处理面积的大小，提高处理速度，提高处理质量。解决方案：用于等离子体处理的装置包括反应容器4，设置在容器4中的高频电极20和与电极20相关联的电介质6.电极20具有多个与每个电极分离的小电极21至24 其他。施加到至少两个电极21至24的高频电压在相位上彼此不同。电介质6相对于电极21至24突出到等离子体产生气氛侧。通过电介质6可以使由电极20施加的电场的强度分布均匀。

6. 发明专利

JP2003059839A Apparatus and method for plasma treatment 审中-公开
标题翻译：用于血浆处理的装置和方法
公开(公告)号：JP2003059839A
公开(公告)日：2003-02-28
申请号：JP2001246147
申请日：2001-08-14
申请人： Sharp Corp , シャープ株式会社
发明人： INAMASU TAKASHI , WADA KENJI
IPC分类号： H05H1/46 , C23C16/505 , H01L21/205 , H01L21/302 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide an apparatus for plasma treatment, capable of increasing the size of the treatment area, improving the treatment speed and improving the treatment quality.
SOLUTION: The apparatus for plasma treatment comprises a reaction vessel 4, a high-frequency electrode 20 provided in the vessel 4, and a dielectric 6 associated with the electrode 20. The electrode 20 has a plurality of small electrodes 21 to 24 separated from each other. High-frequency voltages, applied to at least two of the electrodes 21 to 24, are different in phases from each other. The dielectric 6 is protruded to a plasma-generating atmosphere side with respect to the electrodes 21 to 24. The strength distribution of an electric field to be applied by the electrode 20 can be made uniform by the dielectric 6.
COPYRIGHT: (C)2003,JPO
摘要翻译：要解决的问题：提供一种等离子体处理装置，能够增加处理面积的大小，提高处理速度，提高处理质量。解决方案：用于等离子体处理的装置包括反应容器4，设置在容器4中的高频电极20和与电极20相关联的电介质6.电极20具有多个与每个电极分离的小电极21至24 其他。施加到至少两个电极21至24的高频电压在相位上彼此不同。电介质6相对于电极21〜24突出到等离子体产生气氛侧。通过电介质6可以使由电极20施加的电场的强度分布均匀。

7. 发明专利

JP2012129569A Multi-junction thin film solar cell and method of manufacturing the same 审中-公开
标题翻译：多层薄膜太阳能电池及其制造方法
公开(公告)号：JP2012129569A
公开(公告)日：2012-07-05
申请号：JP2012083744
申请日：2012-04-02
申请人： Sharp Corp , シャープ株式会社
发明人： WADA KENJI
IPC分类号： H01L31/04
CPC分类号： Y02E10/50
摘要： PROBLEM TO BE SOLVED: To provide an amorphous-crystalline junction thin film solar cell in which defect density is reduced in the crystalline semiconductor layer, and sufficient light confinement effect can be attained by a texture structure of protrusions and recesses.SOLUTION: In the thin film solar cell, the surface supporting a photoelectric conversion element structure forms a texture structure where the average value of the ratio R/L of the size R and the interval L of protrusions and recesses is in the range of 0.1-1.5. In the photoelectric conversion element structure formed on the surface, a p-type semiconductor layer 13 and an intrinsic semiconductor layer 14 in contact with the surface are crystalline layers mainly composed of columnarly grown crystal grains having a height of 100 nm or higher.
摘要翻译：要解决的问题：提供一种其中晶体半导体层中的缺陷密度降低的非晶结结薄膜太阳能电池，并且通过突起和凹陷的纹理结构可以获得足够的光限制效果。解决方案：在薄膜太阳能电池中，支撑光电转换元件结构的表面形成纹理结构，其中R和L的比R / L的平均值和突起和凹陷的间隔L在该范围内为0.1-1.5。在表面形成的光电转换元件结构中，与表面接触的p型半导体层13和本征半导体层14是主要由高度为100nm以上的柱状生长晶粒构成的结晶层。版权所有（C）2012，JPO＆INPIT

8. 发明专利

JP2007261944A Purification method for silicon 有权
标题翻译：硅的纯化方法
公开(公告)号：JP2007261944A
公开(公告)日：2007-10-11
申请号：JP2007180997
申请日：2007-07-10
申请人： Sharp Corp , シャープ株式会社
发明人： FUKUYAMA TOSHIAKI , WADA KENJI
IPC分类号： C01B33/037
摘要： PROBLEM TO BE SOLVED: To inexpensively provide silicon for a solar cell by efficiently purifying silicon without reducing purification speed.
SOLUTION: The purification method for a molten invention, has, repeatedly, a process for removing a product containing the impurity elements from the molten silicon by bringing a purification gas containing a component reacting with the impurity elements into contact with the molten silicon to which a purification additive comprising an acidic oxide as a main component is added, and a process for removing a product formed by an oxidation reaction of the molten silicon and the purification gas by bringing a treating gas having lower reactivity with the molten silicon into contact with the molten silicon are repeatedly provided, wherein the purification additive is at least one kind selected from a group consisting of an alkali metal oxide, an alkali metal carbonate, an alkali metal hydrogen carbonate and an alkali metal silicate.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：通过在不降低净化速度的情况下有效地净化硅来廉价地为太阳能电池提供硅。解决方案：熔融发明的净化方法重复地，通过使含有与杂质元素反应的成分的净化气体与熔融硅接触而从熔融硅中除去含有杂质成分的产物的方法添加包含酸性氧化物作为主要成分的净化添加剂的添加剂，以及通过使与熔融硅反应性低的处理气体接触而除去由熔融硅和净化气体的氧化反应形成的物质的工序重复提供熔融硅，其中纯化添加剂是选自由碱金属氧化物，碱金属碳酸盐，碱金属碳酸氢盐和碱金属硅酸盐组成的组中的至少一种。版权所有（C）2008，JPO＆INPIT

9. 发明专利

JP2005255417A Method for purifying silicon 审中-公开
标题翻译：纯化硅的方法
公开(公告)号：JP2005255417A
公开(公告)日：2005-09-22
申请号：JP2002073523
申请日：2002-03-18
申请人： Sharp Corp , シャープ株式会社
发明人： FUKUYAMA TOSHIAKI , WADA KENJI , HAYAKAWA HISASHI , NUNOI TORU
IPC分类号： C01B33/037 , H01L31/04 , H01L31/18
CPC分类号： C01B33/037 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： PROBLEM TO BE SOLVED: To purify metal silicon to about 7N(nines) purity and to provide silicon for solar cells at a low cost by making a large-scale purification facility unnecessary, by reducing energy loss caused by repetition of dissolution and solidification of silicon or slag, in particular, by making a process of removing a purification additive to silicon unnecessary.
SOLUTION: Purification of silicon is carried out in steps of: first, heating silicon containing impurities with an additive for impurity purification to obtain melted silicon; decreasing the amount of nonvolatile impurities while agitating the melt to mix the additive with the melted silicon; decreasing the amount of volatile impurities; and further immersing a crystallization substrate in the melted silicon to crystallize silicon on the surface of the crystallization substrate to decrease the amount of impurities.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：为了将金属硅纯化至约7N（九种）纯度，并且通过不需要大规模净化设备，通过减少由于重复的溶解引起的能量损失，以低成本提供太阳能电池的硅，并且硅或渣的固化，特别是通过不需要除去硅的纯化添加剂的方法。解决方案：硅的纯化步骤如下：首先，用添加剂加热含硅杂质以进行杂质净化以获得熔融的硅; 在搅拌熔体的同时减少非挥发性杂质的量以将添加剂与熔融的硅混合; 减少挥发性杂质的量; 并且将结晶衬底进一步浸入熔融硅中以在结晶衬底的表面上结晶硅以减少杂质的量。版权所有（C）2005，JPO＆NCIPI

10. 发明专利

JP2003068659A Apparatus and method for plasma treatment, thin film produced by using the same, substrate, and semiconductor device 审中-公开
标题翻译：用于等离子体处理的装置和方法，使用其制造的薄膜，基板和半导体器件
公开(公告)号：JP2003068659A
公开(公告)日：2003-03-07
申请号：JP2001259011
申请日：2001-08-29
申请人： Sharp Corp , シャープ株式会社
发明人： INAMASU TAKASHI , WADA KENJI , MORITA HARUYUKI , HAYAKAWA HISASHI
IPC分类号： H05H1/46 , C23C16/505 , H01L21/205 , H01L31/04
CPC分类号： Y02E10/50
摘要： PROBLEM TO BE SOLVED: To solve the problem of film thickness being made locally non-uniform by a strong electric field, since that strong electric field is generated between adjacent small electrodes when there is a phase difference between the high-frequency voltages of the adjacent small electrodes, even though film thickness distribution or distribution of an etching rate is improved by controlling the phase of the high-frequency voltage which is to be impressed to each of small electrodes, since a too large or too small electric field is generated close to a gap on each of small electrode surfaces by superimposing of a high-frequency impressed to each of small electrodes and it is not enouch to generate uniform plasma, when a high-frequency electrode is just divided into a plurality of small electrodes. SOLUTION: In the plasma treatment apparatus for impressing the high frequency voltage to a plurality of small electrodes comprising high frequency electrode, while shifting the phase of the high-frequency voltage, a size dc of the gap between the adjacent small electrodes can be controlled and the relation with a distance da between a plurality of small electrodes and a member to be treated is controlled to be within the range of 0.5
摘要翻译：要解决的问题：为了解决由于强电场而局部地不均匀的膜厚度的问题，由于在相邻的小电极之间产生强电场，当相邻的小电极的高频电压之间存在相位差即使通过控制要施加到每个小电极的高频电压的相位来改善蚀刻速率的膜厚度分布或分布，因此小电极由于产生接近于...的电场太大或太小每个小电极表面上的间隙通过叠加在每个小电极上的高频，并且当高频电极刚被分成多个小电极时，它不会产生均匀的等离子体。解决方案：在用于将高频电压施加到包括高频电极的多个小电极的等离子体处理装置中，在移动高频电压的相位的同时，可以控制相邻小电极之间的间隙的尺寸dc，将多个小电极和要处理的部件之间的距离da的关系控制在0.5 <= dc / da <= 3的范围内。

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