专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

JP2014063141A Semiconductor device 审中-公开
标题翻译：半导体器件
公开(公告)号：JP2014063141A
公开(公告)日：2014-04-10
申请号：JP2013158663
申请日：2013-07-31
申请人： Semiconductor Energy Lab Co Ltd , 株式会社半導体エネルギー研究所
发明人： YAMAZAKI SHUNPEI , MIYAKE HIROYUKI , SHISHIDO HIDEAKI , KOYAMA JUN , MATSUBAYASHI DAISUKE , MURAYAMA KEISUKE
IPC分类号： G02F1/1368 , G09F9/30 , H01L21/822 , H01L27/04 , H01L29/786 , H01L51/50 , H05B33/14
CPC分类号： H01L27/1255 , G02F1/1339 , G02F1/134363 , G02F1/13454 , G02F1/13458 , G02F1/136204 , G02F1/136209 , G02F1/136213 , G02F1/136286 , G02F1/1368 , G02F2001/134372 , G02F2201/121 , G02F2201/123 , G02F2201/40 , H01L27/1225 , H01L27/124 , H01L27/3265 , H01L29/7869
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device including a capacitor whose charge capacity is increased without reducing the aperture ratio.SOLUTION: The semiconductor device includes a transistor including a light-transmitting semiconductor film, a capacitor where a dielectric film is provided between a pair of electrodes, an insulating film provided over the light-transmitting semiconductor film, and a light-transmitting conductive film provided over the insulating film. In the capacitor, a metal oxide film containing at least indium (In) or zinc (Zn) and formed on the same surface as the light-transmitting semiconductor film in the transistor serves as one electrode, the light-transmitting conductive film serves as the other electrode, and the insulating film provided over the light-transmitting semiconductor film serves as the dielectric film.
摘要翻译：要解决的问题：提供一种包括电容器的半导体器件，其电容增加而不降低开口率。解决方案：半导体器件包括晶体管，其包括透光半导体膜，电容器，其中介电膜设置在一对电极，设置在透光半导体膜上的绝缘膜，以及设置在绝缘膜上的透光导电膜。在电容器中，与晶体管中的透光性半导体膜相同的表面上形成至少含有铟（In）或锌（Zn）的金属氧化物膜作为一个电极，透光性导电膜作为设置在透光半导体膜上的绝缘膜用作电介质膜。

2. 发明专利

JP2014194573A Liquid crystal display device 有权
标题翻译：液晶显示装置
公开(公告)号：JP2014194573A
公开(公告)日：2014-10-09
申请号：JP2014109708
申请日：2014-05-28
申请人： Semiconductor Energy Lab Co Ltd , 株式会社半導体エネルギー研究所
发明人： YAMAZAKI SHUNPEI , MIYAKE HIROYUKI , SHISHIDO HIDEAKI , KOYAMA JUN , MATSUBAYASHI DAISUKE , MURAYAMA KEISUKE
IPC分类号： G02F1/1368 , H01L21/336 , H01L21/822 , H01L27/04 , H01L29/786
CPC分类号： H01L27/1255 , G02F1/1339 , G02F1/134363 , G02F1/13454 , G02F1/13458 , G02F1/136204 , G02F1/136209 , G02F1/136213 , G02F1/136286 , G02F1/1368 , G02F2001/134372 , G02F2201/121 , G02F2201/123 , G02F2201/40 , H01L27/1225 , H01L27/124 , H01L27/3265 , H01L29/7869
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device including a capacitor whose charge capacity is increased without reducing aperture ratio.SOLUTION: A semiconductor device comprises: a transistor including a light-transmitting semiconductor film; a capacitor where a dielectric film is provided between a pair of electrodes; an insulating film provided over the light-transmitting semiconductor film; and a light-transmitting conductive film provided over the insulating film. In the capacitor, a metal oxide film containing at least indium (In) or zinc (Zn) and formed on the same surface as the light-transmitting semiconductor film in the transistor serves as one electrode, the light-transmitting conductive film serves as the other electrode, and the insulating film provided over the light-transmitting semiconductor film serves as the dielectric film.
摘要翻译：要解决的问题：提供一种包括电容器的半导体器件，其电容量增加而不降低开口率。解决方案：一种半导体器件包括：包括透光半导体膜的晶体管; 电容器，其中电介质膜设置在一对电极之间; 设置在透光半导体膜上的绝缘膜; 以及设置在绝缘膜上的透光性导电膜。在电容器中，与晶体管中的透光性半导体膜相同的表面上形成至少含有铟（In）或锌（Zn）的金属氧化物膜作为一个电极，透光性导电膜作为设置在透光半导体膜上的绝缘膜用作电介质膜。

3. 发明专利

JP2014103390A Semiconductor device and manufacturing method of the same 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：JP2014103390A
公开(公告)日：2014-06-05
申请号：JP2013219878
申请日：2013-10-23
申请人： Semiconductor Energy Lab Co Ltd , 株式会社半導体エネルギー研究所
发明人： HIZUKA JUNICHI , SHIMA YUKINORI , TOKUNAGA HAJIME , SASAKI TOSHINARI , MURAYAMA KEISUKE , MATSUBAYASHI DAISUKE
IPC分类号： H01L29/786 , G02F1/133 , G02F1/1368 , H01L21/316 , H01L21/318 , H01L21/336 , H01L51/50 , H05B33/14
CPC分类号： H01L29/78696 , H01L21/022 , H01L21/02263 , H01L21/02554 , H01L21/02565 , H01L21/0262 , H01L29/24 , H01L29/513 , H01L29/66969 , H01L29/78648 , H01L29/7869 , H01L29/78693
摘要： PROBLEM TO BE SOLVED: To reduce defects in an oxide semiconductor film in a semiconductor device using the oxide semiconductor film; and improve electric characteristics in a semiconductor device using an oxide semiconductor film; and improve reliability in a semiconductor device using an oxide semiconductor film.SOLUTION: A semiconductor device comprises: a transistor including a gate electrode formed on a substrate, a gate insulation film which covers the gate electrode, a multilayer film which overlaps the gate electrode via the gate insulation film and a pair of electrodes which contact the multilayer film; a first oxide insulation film which covers the transistor; and a second oxide insulation film formed on the first oxide insulation film. The multilayer film includes an oxide semiconductor film and an In-containing or Ga-containing oxide film. The first oxide insulation film transmits oxygen. The second oxide insulation film contains more oxygen than oxygen which satisfies a stoichiometric composition.
摘要翻译：要解决的问题：为了减少使用氧化物半导体膜的半导体器件中的氧化物半导体膜的缺陷; 并且改善使用氧化物半导体膜的半导体器件中的电特性; 并且提高了使用氧化物半导体膜的半导体器件的可靠性。解决方案：一种半导体器件包括：晶体管，包括形成在衬底上的栅电极，覆盖栅电极的栅极绝缘膜，与栅极电极重叠的多层膜栅极绝缘膜和与多层膜接触的一对电极; 覆盖晶体管的第一氧化物绝缘膜; 以及形成在第一氧化物绝缘膜上的第二氧化物绝缘膜。多层膜包括氧化物半导体膜和含In或Ga的氧化物膜。第一氧化物绝缘膜透氧。第二氧化物绝缘膜比满足化学计量组成的氧含有更多的氧。

4. 发明专利

JP2013021316A Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：JP2013021316A
公开(公告)日：2013-01-31
申请号：JP2012135585
申请日：2012-06-15
申请人： Semiconductor Energy Lab Co Ltd , 株式会社半導体エネルギー研究所
发明人： MIYAIRI HIDEKAZU , ORIKI KOJI , MURAYAMA KEISUKE
IPC分类号： H01L29/786 , H01L21/205 , H01L29/417
摘要： PROBLEM TO BE SOLVED: To fabricate a thin-film transistor having excellent characteristics with reduced off-current.SOLUTION: In a p-type reverse-stagger-type thin-film transistor, a region where a semiconductor film including a stack of a microcrystalline semiconductor region, an amorphous semiconductor region, and an impurity semiconductor region from a gate insulating film side contacts a pair of wiring lines is overlapped with a gate electrode via the gate insulating film. The Schottky barrier φBn of electrons, which is a difference between the work function of the pair of wiring lines and the electron affinity of a microcrystalline semiconductor constituting the microcrystalline semiconductor region is more than or equal to 0.65 eV.
摘要翻译：要解决的问题：制造具有优异特性的薄膜晶体管，具有减少的截止电流。解决方案：在p型反交错型薄膜晶体管中，从栅极绝缘膜的半导体膜包括微晶半导体区域的堆叠，非晶半导体区域和杂质半导体区域的区域经由栅极绝缘膜与一对栅电极重叠的一对布线。作为一对布线的功函数与构成微晶半导体区域的微晶半导体的电子亲和性的差的电子的肖特基势垒φBn大于或等于0.65eV。版权所有（C）2013，JPO＆INPIT

5. 发明专利

JP2012064932A Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：JP2012064932A
公开(公告)日：2012-03-29
申请号：JP2011178196
申请日：2011-08-17
申请人： Semiconductor Energy Lab Co Ltd , 株式会社半導体エネルギー研究所
发明人： GOTO HIROMITSU , MURAYAMA KEISUKE
IPC分类号： H01L21/336 , G02F1/1368 , H01L29/786 , H01L51/50 , H05B33/14
CPC分类号： H01L29/7869 , H01L29/42384 , H01L29/78633 , H01L29/78696
摘要： PROBLEM TO BE SOLVED: To provide a transistor with stable electric characteristics by suppressing light degradation as much as possible, and provide a semiconductor device including the transistor.SOLUTION: Multiple interference caused by reflection of light on a film used for forming a transistor is focused. The optical film thickness of the film that causes the reflection is set to an odd-number multiple or even-number multiple of approximately λ/4. Thus, the reflectance of light with a wavelength region that is absorbed by an oxide semiconductor is increased without deteriorating the function of the film against the transistor. Accordingly, the amount of light absorbed by the oxide semiconductor is reduced and the light degradation is reduced.
摘要翻译：要解决的问题：通过尽可能地抑制光劣化来提供具有稳定电特性的晶体管，并提供包括晶体管的半导体器件。解决方案：聚焦由用于形成晶体管的膜上的光的反射引起的多重干扰。导致反射的膜的光学膜厚被设定为大约λ 0 / 4的奇数倍数或偶数倍。因此，具有被氧化物半导体吸收的波长区域的光的反射率增加，而不会降低膜对晶体管的功能。因此，氧化物半导体吸收的光量减少，光劣化降低。版权所有（C）2012，JPO＆INPIT

6. 发明专利

JP2014103389A Semiconductor device and manufacturing method of the same 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：JP2014103389A
公开(公告)日：2014-06-05
申请号：JP2013219871
申请日：2013-10-23
申请人： Semiconductor Energy Lab Co Ltd , 株式会社半導体エネルギー研究所
发明人： HIZUKA JUNICHI , SHIMA YUKINORI , TOKUNAGA HAJIME , SASAKI TOSHINARI , MURAYAMA KEISUKE , MATSUBAYASHI DAISUKE
IPC分类号： H01L29/786 , C23C14/08 , C23C16/42 , G09F9/30 , H01L21/316 , H01L21/318 , H01L21/336 , H01L21/363 , H01L21/365 , H01L51/50 , H05B33/14
CPC分类号： H01L29/78606 , H01L21/02109 , H01L21/02263 , H01L21/02554 , H01L21/02565 , H01L21/02631 , H01L27/1225 , H01L27/3262 , H01L29/51 , H01L29/66969 , H01L29/78648 , H01L29/7869 , H01L29/78696
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device which reduces defects in an oxide semiconductor film; and a semiconductor device using an oxide semiconductor film, which has improved electric characteristics or improved reliability.SOLUTION: A semiconductor device comprises a gate electrode formed on a substrate, a gate insulation film which covers the gate electrode, a multilayer film which overlaps the gate electrode via the gate insulation film, a transistor having a pair of electrodes which contact the multilayer film, and an oxide insulation film which covers the transistor. The multilayer film includes an oxide semiconductor film and an In-containing or Ga-containing oxide film. The oxide insulation film contains more oxygen than oxygen which satisfies a stoichiometric composition. The transistor has a threshold voltage which does not fluctuate due to a bias temperature stress test or has a fluctuation in a positive direction or a negative direction is not greater than 1.0 V.
摘要翻译：要解决的问题：提供减少氧化物半导体膜中的缺陷的半导体器件; 以及使用具有改善的电特性或提高的可靠性的氧化物半导体膜的半导体器件。解决方案：半导体器件包括形成在衬底上的栅电极，覆盖栅电极的栅极绝缘膜，与栅极重叠的多层膜电极经由栅极绝缘膜，具有与多层膜接触的一对电极的晶体管和覆盖晶体管的氧化物绝缘膜。多层膜包括氧化物半导体膜和含In或Ga的氧化物膜。氧化物绝缘膜比满足化学计量组成的氧含有更多的氧。晶体管具有由于偏置温度应力测试而不波动的阈值电压或正方向或负方向的波动不大于1.0V。

7. 发明专利

JP2014199907A 半導体装置及びその作製方法有权
标题翻译：半导体器件及其制造方法
公开(公告)号：JP2014199907A
公开(公告)日：2014-10-23
申请号：JP2013219875
申请日：2013-10-23
申请人：株式会社半導体エネルギー研究所 , Semiconductor Energy Lab Co Ltd
发明人： HIZUKA JUNICHI , SHIMA YUKINORI , TOKUNAGA HAJIME , SASAKI TOSHINARI , MURAYAMA KEISUKE , MATSUBAYASHI DAISUKE
IPC分类号： H01L29/786 , G02F1/1368 , H01L21/336 , H01L51/50 , H05B33/14
CPC分类号： H01L29/66969 , H01L21/022 , H01L21/02263 , H01L27/1225 , H01L29/513 , H01L29/78609 , H01L29/7869
摘要：【課題】酸化物半導体膜を用いた半導体装置において、酸化物半導体膜の欠陥を低減する。また、酸化物半導体膜を用いた半導体装置において、電気特性を向上させる。また、酸化物半導体膜を用いた半導体装置において、信頼性を向上させる。【解決手段】基板上に形成されるゲート電極、ゲート電極を覆うゲート絶縁膜、ゲート絶縁膜を介してゲート電極と重なる多層膜、及び多層膜に接する一対の電極を有するトランジスタと、該トランジスタを覆う第1の酸化物絶縁膜及び該第1の酸化物絶縁膜上に形成される第2の酸化物絶縁膜とを備える半導体装置であって、多層膜は、酸化物半導体膜及びIn若しくはGaを含む酸化物膜を有し、第1の酸化物絶縁膜は、酸素を透過する酸化物絶縁膜であり、第2の酸化物絶縁膜は、化学量論的組成を満たす酸素よりも多くの酸素を含む酸化物絶縁膜である。【選択図】図1
摘要翻译：要解决的问题：减少使用氧化物半导体膜的半导体器件中的氧化物半导体膜的缺陷; 以改善使用氧化物半导体膜的半导体器件中的电特性; 并提高使用氧化物半导体膜的半导体器件的可靠性。解决方案：半导体器件包括：晶体管，其具有形成在衬底上的栅电极，用于覆盖栅电极的栅极绝缘膜，与栅电极重叠的多层膜经由栅极绝缘膜和与多层膜接触的一对电极; 用于覆盖晶体管的第一氧化物绝缘膜; 以及形成在第一氧化物绝缘膜上的第二氧化物绝缘膜。多层膜具有氧化物半导体膜和含有In或Ga的氧化物膜，第一氧化物绝缘膜是透过氧的氧化物绝缘膜，第二氧化物绝缘膜是含有比氧更多的氧的氧化物绝缘膜，其满足化学计量组成。

8. 发明专利

JP2013243343A Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：JP2013243343A
公开(公告)日：2013-12-05
申请号：JP2013052035
申请日：2013-03-14
申请人： Semiconductor Energy Lab Co Ltd , 株式会社半導体エネルギー研究所
发明人： YAMAZAKI SHUNPEI , MATSUBAYASHI DAISUKE , MURAYAMA KEISUKE
IPC分类号： H01L29/786
CPC分类号： H01L29/7869 , H01L29/78696
摘要： PROBLEM TO BE SOLVED: To provide a transistor using an oxide semiconductor film in which a threshold voltage becoming minus is reduced, and to provide a semiconductor device with high quality having the transistor using the oxide semiconductor film.SOLUTION: An oxide semiconductor film having first to third regions is used for a transistor. In the first region, the oxide semiconductor film is in contact with a source electrode or a drain electrode on a top surface, in the second region, the film is in contact with a protective insulating film on the top surface and has a substantially even film thickness with a smaller thickness than the maximum film thickness in the first region, and in the third region, the film is in contact with the protective insulating film on the top surface and side surfaces.
摘要翻译：要解决的问题：提供一种使用其中阈值电压变为负的氧化物半导体膜的晶体管，并且提供具有使用氧化物半导体膜的晶体管的高质量的半导体器件。解决方案：具有第一到第三区域用于晶体管。在第一区域中，氧化物半导体膜与顶表面上的源电极或漏电极接触，在第二区域中，膜与顶表面上的保护绝缘膜接触，并且具有基本上均匀的膜厚度小于第一区域中的最大膜厚度的厚度，并且在第三区域中，膜与顶表面和侧表面上的保护绝缘膜接触。

9. 发明专利

JP2013236072A Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：JP2013236072A
公开(公告)日：2013-11-21
申请号：JP2013082819
申请日：2013-04-11
申请人： Semiconductor Energy Lab Co Ltd , 株式会社半導体エネルギー研究所
发明人： YAMAZAKI SHUNPEI , MATSUBAYASHI DAISUKE , MURAYAMA KEISUKE
IPC分类号： H01L29/786 , C23C14/08 , H01L21/336 , H01L21/8234 , H01L21/8242 , H01L21/8247 , H01L27/088 , H01L27/10 , H01L27/105 , H01L27/108 , H01L27/115 , H01L29/423 , H01L29/49 , H01L29/788 , H01L29/792
CPC分类号： H01L29/7869 , H01L29/7831
摘要： PROBLEM TO BE SOLVED: To provide a transistor structure which materializes a so-called normally-off switching element having a positive threshold voltage, in an n-channel transistor using an oxide semiconductor in a channel formation region.SOLUTION: A transistor is configured so that an oxide semiconductor lamination is provided between a first gate electrode layer and a second gate electrode layer with an insulation layer interposed therebetween, and the thickness of a channel formation region is smaller than that in other region. In the transistor, one gate electrode layer is provided as a so-called back gate for controlling the threshold voltage. Since the threshold voltage of the transistor can be controlled by controlling the level of a potential given to the back gate, normally-off of the transistor can be maintained easily.
摘要翻译：要解决的问题：提供在沟道形成区域中使用氧化物半导体的n沟道晶体管中实现具有正阈值电压的所谓常开开关元件的晶体管结构。解决方案：晶体管被配置为在第一栅电极层和第二栅极电极层之间设置有绝缘层，并且沟道形成区域的厚度小于其他区域中的厚度。在晶体管中，一个栅电极层被提供为用于控制阈值电压的所谓的后栅。由于可以通过控制给予背栅的电位的电平来控制晶体管的阈值电压，所以能够容易地维持晶体管的常态。

10. 发明专利

JP2013149954A Simulation method, simulation device, recording medium, and program 有权
标题翻译：模拟方法，模拟装置，记录介质和程序
公开(公告)号：JP2013149954A
公开(公告)日：2013-08-01
申请号：JP2012270895
申请日：2012-12-12
申请人： Semiconductor Energy Lab Co Ltd , 株式会社半導体エネルギー研究所
发明人： MURAYAMA KEISUKE , KATO KIYOSHI , TAKAHASHI YASUYUKI , MATSUZAKI TAKANORI
IPC分类号： H01L21/336 , G06F17/50 , H01L29/00 , H01L29/786
摘要： PROBLEM TO BE SOLVED: To provide a simulation method which can provide analytic values regarding electrical characteristics of a semiconductor device which are close to electrical characteristics of an actually manufactured semiconductor device.SOLUTION: In the simulation method, a target of analysis is a transistor whose channel formation region contains a semiconductor having a band gap wider than silicon, and a value of a drain current for a gate voltage in said transistor is obtained as a solution in a temporally metastable state by using a difference method to solve a plurality of governing equations including the Poisson equation, the electron current equation of continuity and the hole current equation of continuity.
摘要翻译：要解决的问题：提供可以提供与实际制造的半导体器件的电气特性接近的半导体器件的电特性的分析值的模拟方法。解决方案：在仿真方法中，分析目标是晶体管，通道形成区域包含具有比硅更宽的带隙的半导体，并且通过使用差分法来获得所述晶体管中的栅极电压的漏极电流作为时间亚稳态的解，以求解多个控制方程包括泊松方程，电流方程的连续性和空穴电流方程的连续性。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式