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1. 发明专利

JP2012132816A Pressure detection device, electronic apparatus and robot 审中-公开
标题翻译：压力检测装置，电子装置和机器人
公开(公告)号：JP2012132816A
公开(公告)日：2012-07-12
申请号：JP2010285967
申请日：2010-12-22
申请人： Seiko Epson Corp , セイコーエプソン株式会社
发明人： TAKENAKA SATOSHI
IPC分类号： G01L5/16
摘要： PROBLEM TO BE SOLVED: To provide a pressure detection device that can detect direction and size of external pressure with high accuracy, and an electronic apparatus and a robot that include the pressure detection device.SOLUTION: A pressure detection device 10 comprises: a sensor substrate 11 including a plurality of pressure sensors 15 formed by a plurality of sensor electrodes 13 arranged around a reference point and pressure-sensitive elastic body layers 14 provided on regions including the sensor electrodes 13; and a second substrate 21 including an elastic body projection 23 which is elastically deformed by external pressure in a state in which a tip thereof overlaps with the reference point of the sensor substrate 11 and abuts on the pressure-sensitive elastic body layers 14, the second substrate 21 having conductivity.
摘要翻译：要解决的问题：提供一种能够高精度地检测外部压力的方向和尺寸的压力检测装置，以及包括压力检测装置的电子设备和机器人。压力检测装置10包括：传感器基板11，其包括多个压力传感器15，多个压力传感器15由围绕参考点布置的多个传感器电极13和设置在包括传感器的区域上的压敏弹性体层14 电极13; 以及第二基板21，其包括在尖端与传感器基板11的基准点重叠并抵靠在压敏弹性体层14上的状态下由外部压力弹性变形的弹性体突起23，第二基板21 具有导电性的基板21。版权所有（C）2012，JPO＆INPIT

2. 发明专利

JP2012108021A Detecting device, electronic equipment and robot 审中-公开
标题翻译：检测设备，电子设备和机器人
公开(公告)号：JP2012108021A
公开(公告)日：2012-06-07
申请号：JP2010257567
申请日：2010-11-18
申请人： Seiko Epson Corp , セイコーエプソン株式会社
发明人： TAKENAKA SATOSHI
IPC分类号： G01L5/16
摘要： PROBLEM TO BE SOLVED: To solve the problem of a known detecting device having a configuration in which a pressure baring sheet on which conic projections are arranged in a substantially uniform way on the rear face is used to measure an external pressure distribution from the projections, in which the inward force of the external pressure working on the face to be measured (slipping force) cannot be measured.SOLUTION: A detecting device has a plurality of electrodes arranged on a first face of a substrate. The first face has a wavy shape and the detecting device is provided with a pressure-sensitive layer which covers the first face and whose electric characteristics are changed by the application of an external pressure and return to the original state upon release from the external pressure. When the external pressure is applied to the pressure-sensitive layer in an oblique direction, as the first face of the substrate has a wavy shape, a force in the transverse direction is given to the oblique face of the wavy shape of the first face, and therefore the force is given at an angle close to the normal direction of the electrodes with the result that the sensitivity to the external pressures can be made higher than that in the absence of the wavy shape.
摘要翻译：解决的问题为了解决现有的检测装置的问题，该检测装置具有这样一种结构，其中以背面大致均匀的方式将锥形突起布置在其上的压力弹性片用于测量外部压力分布不能测量作用在被测定面上的外部压力的向内力（滑动力）的突起。解决方案：检测装置具有布置在基板的第一面上的多个电极。第一面具有波状形状，并且检测装置设置有覆盖第一面的压敏层，并且其电特性通过施加外部压力而改变，并且在从外部压力释放时恢复到初始状态。当外部压力沿倾斜方向施加到压敏层时，由于基板的第一面具有波浪形状，因此横向上的力被赋予第一面的波浪形状的倾斜面，因此力以与电极的法线方向接近的角度给出，结果是可以使得对外部压力的敏感度高于没有波形形状的灵敏度。版权所有（C）2012，JPO＆INPIT

3. 发明专利

JP2012098148A Pressure detection device, electronic device, and robot 审中-公开
标题翻译：压力检测装置，电子装置和机器人
公开(公告)号：JP2012098148A
公开(公告)日：2012-05-24
申请号：JP2010245976
申请日：2010-11-02
申请人： Seiko Epson Corp , セイコーエプソン株式会社
发明人： TAKENAKA SATOSHI
IPC分类号： G01L5/16 , G01L5/00
摘要： PROBLEM TO BE SOLVED: To provide a pressure detection device, an electronic device, and a robot which allow improvement of detection accuracy and detection sensitivity.SOLUTION: A pressure detection device 10 includes a sensor board 11 having a plurality of pressure sensors 13 arranged around a reference point, and a projection sheet 21 having elastic projections 23 whose tip ends 23a are superposed on the reference points of the sensor board 11 and which elastically deform due to external force under a state that the tip ends contact the pressure sensors 13. Further, an elastic flattening layer 14 is arranged in area around adjacent elastic projections 23, the area sandwiched between the sensor board 11 and the projection sheet 21.
摘要翻译：要解决的问题：提供一种能够提高检测精度和检测灵敏度的压力检测装置，电子装置和机器人。解决方案：压力检测装置10包括具有布置在参考点周围的多个压力传感器13的传感器板11和具有弹性突起23的突出片21，突出片23的末端23a重叠在传感器的基准点上板11在尖端与压力传感器13接触的状态下由于外力而弹性变形。此外，弹性压平层14布置在相邻的弹性突起23周围的区域中，夹在传感器板11和投影纸21.版权所有（C）2012，JPO＆INPIT

4. 发明专利

JP2012026906A Detector, electric equipment and robot 审中-公开
标题翻译：检测器，电气设备和机器人
公开(公告)号：JP2012026906A
公开(公告)日：2012-02-09
申请号：JP2010166794
申请日：2010-07-26
申请人： Seiko Epson Corp , セイコーエプソン株式会社
发明人： TAKENAKA SATOSHI
IPC分类号： G01L5/00 , G01L5/16
摘要： PROBLEM TO BE SOLVED: To provide a detector capable of accurately detecting external force, and to provide an electric equipment and a robot.SOLUTION: The detector includes: a first substrate 10 having a plurality of first capacitor electrodes 12 formed therein; a dielectric 30 formed on the first substrate 10 so as to cover the entire exposed part of the plurality of first capacitor electrodes 12; a pressure-sensitive conductive elastic body 31 formed by covering the dielectric 30; and a second capacitor electrode 20 arranged on the pressure-sensitive conductive elastic body 31.
摘要翻译：要解决的问题：提供能够精确地检测外力的检测器，并提供电气设备和机器人。检测器包括：具有形成在其中的多个第一电容器电极12的第一基板10; 形成在第一基板10上以覆盖多个第一电容器电极12的整个暴露部分的电介质30; 通过覆盖电介质30形成的压敏导电性弹性体31; 以及布置在压敏导电弹性体31上的第二电容器电极20.版权所有（C）2012，JPO＆INPIT

5. 发明专利

JP2007189235A Thin film semiconductor device and display system 审中-公开
标题翻译：薄膜半导体器件和显示系统
公开(公告)号：JP2007189235A
公开(公告)日：2007-07-26
申请号：JP2007006140
申请日：2007-01-15
申请人： Seiko Epson Corp , セイコーエプソン株式会社
发明人： MIYASAKA MITSUTOSHI , MATSUEDA YOJIRO , TAKENAKA SATOSHI
IPC分类号： H01L21/336 , H01L21/205 , H01L21/8238 , H01L27/08 , H01L27/092 , H01L29/786
摘要： PROBLEM TO BE SOLVED: To provide an LDD type thin film semiconductor device capable of a high-speed operation without adding new process steps, and to provide a manufacturing method of the thin film semiconductor device and a display system. SOLUTION: In the thin film semiconductor device including a non-single crystalline semiconductor film that is formed on an insulating substance of a substrate with the insulating substance at least in a part of a surface, the semiconductor film comprises: first impurity semiconductor films (3 and 4) arranged at a source section and a drain section of the thin film transistor; and a second impurity semiconductor film (9) of high resistance arranged at least either between the drain section and the channel section of the thin film transistor or between the source section and the channel section. In the case of expressing an LDD length at the drain section as Llddd and a distance between the edge side on the channel section side of the contact hole at the drain section to the gate electrode as Lcontd, they are in such a relationship that 0.8×Llddd≤Lcontd≤1.2×Llddd. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种能够在不添加新的工艺步骤的情况下进行高速操作的LDD型薄膜半导体器件，并且提供薄膜半导体器件和显示系统的制造方法。解决方案：在包括非晶单体半导体膜的薄膜半导体器件中，半导体膜包括：第一杂质半导体布置在薄膜晶体管的源极部分和漏极部分的膜（3和4）; 以及布置在薄膜晶体管的漏极部分和沟道部分之间或源极部分和沟道部分之间的至少任一个的高电阻的第二杂质半导体膜（9）。在泄漏部分的LDD长度为Llddd，漏极部分的接触孔的沟道部侧的边缘侧与栅电极的距离为Lcontd的情况下，它们的关系为0.8× Llddd≤Lcontd≤1.2×Llddd。版权所有（C）2007，JPO＆INPIT

6. 发明专利

JP2006313776A Thin film semiconductor device, method of manufacturing the same, and electronic apparatus 审中-公开
标题翻译：薄膜半导体器件，其制造方法和电子设备
公开(公告)号：JP2006313776A
公开(公告)日：2006-11-16
申请号：JP2005134994
申请日：2005-05-06
申请人： Seiko Epson Corp , セイコーエプソン株式会社
发明人： TAKENAKA SATOSHI
IPC分类号： H01L21/336 , G02F1/1368 , H01L29/41 , H01L29/423 , H01L29/49 , H01L29/786 , H01L51/50
摘要： PROBLEM TO BE SOLVED: To provide a thin film semiconductor device having a TFT excellent in all of on-state current characteristics, off leakage current characteristics, and a drain breakdown voltage; and to provide an electronic apparatus using this thin film semiconductor device and a method of manufacturing the thin film semiconductor device. SOLUTION: In the thin film semiconductor device 1, the gate electrode 5 of the TFT 10 is disposed opposite to a channel region 30 and border regions 33 and 38. A gate insulating film 4 has a first insulating film 46 overlapped with the channel region 30, a second insulating film 47 overlapped with border regions 33 and 38, and a third insulating film 48 overlapped with a drain region 32 and a source region 37. The second insulating film 47 becomes thicker than the first insulating film 46 in the part adjacent to the first insulating film 46, and becomes thin as it keeps away from the first insulating film 46. The border regions 33 and 38 gradually increase in an impurity concentration on separating from the side of the channel region 30. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种薄膜半导体器件，其具有在导通状态电流特性，漏电流特性以及漏极击穿电压方面均优异的TFT; 并提供使用该薄膜半导体器件的电子设备和制造薄膜半导体器件的方法。解决方案：在薄膜半导体器件1中，TFT10的栅电极5与沟道区域30和边界区域33和38相对设置。栅极绝缘膜4具有与第一绝缘膜46重叠的第一绝缘膜46 沟道区域30，与边界区域33和38重叠的第二绝缘膜47以及与漏极区域32和源极区域37重叠的第三绝缘膜48.第二绝缘膜47比第一绝缘膜46厚与第一绝缘膜46相邻的部分，并且随着远离第一绝缘膜46而变薄。边界区域33和38在从沟道区域30侧分离时杂质浓度逐渐增加。（C）2007，JPO＆INPIT

7. 发明专利

JP2006100506A Thin film semiconductor device, photoelectric device, electronic instrument, method of manufacturing thin film semiconductor device and thin film electronic device 审中-公开
标题翻译：薄膜半导体器件，光电器件，电子仪器，制造薄膜半导体器件和薄膜电子器件的方法
公开(公告)号：JP2006100506A
公开(公告)日：2006-04-13
申请号：JP2004283641
申请日：2004-09-29
申请人： Seiko Epson Corp , セイコーエプソン株式会社
发明人： TAKENAKA SATOSHI , EGUCHI TSUKASA
IPC分类号： H01L29/786 , G02F1/1362 , G02F1/1368 , H01L21/336
摘要： PROBLEM TO BE SOLVED: To raise voltage withstand property and reduce off leakage current, in a thin film semiconductor device such as TFT (Thin Film Transistor) or the like, for example. SOLUTION: A semiconductor film comprises a channel region and a source region as well as a drain region, into both of which impurity is doped and which are provided with an island-type plane pattern, and a gate electrode arranged so as to be opposed to the channel region through a gate insulating film. The concentration of the impurity in a first part neighbored to at least the channel region among the peripheral regions of the island-type plane patterns in respective source region and drain region is lower compared with a central region excluding a second part, excluding the peripheral region and neighbored to the channel region along the channel region. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：例如在诸如TFT（薄膜晶体管）等的薄膜半导体器件中提高耐压性和减小漏电流。解决方案：半导体膜包括沟道区和源极区以及漏极区，掺杂了这两个杂质并且设置有岛型平面图案，栅电极被布置为通过栅极绝缘膜与沟道区域相对。与除了周边区域之外的第二部分以外的中心区域相比，在源极区域和漏极区域中，与岛状平面图案的周边区域中的至少沟道区域相邻的第一部分中的杂质的浓度较低并且与通道区域相邻的通道区域相邻。版权所有（C）2006，JPO＆NCIPI

8. 发明专利

JP2004341540A Liquid crystal display device and its manufacturing method, and electronic equipment 有权
公开(公告)号：JP2004341540A
公开(公告)日：2004-12-02
申请号：JP2004153257
申请日：2004-05-24
申请人： Seiko Epson Corp , セイコーエプソン株式会社
发明人： MIYASAKA MITSUTOSHI , TAKENAKA SATOSHI
IPC分类号： G02F1/1368 , G02F1/1345 , H01L21/336 , H01L27/08 , H01L29/786
摘要： PROBLEM TO BE SOLVED: To make the operation of a CMOS circuit fast by forming respective TFTs in LDD structure, to individually optimize electric characteristics, and to improve display quality and so on. SOLUTION: On an active matrix substrate 1, a source area and a drain area include a low concentration source area and a low concentration drain area at parts facing an end of a gate electrode to lower the electric field strength at a drain end. In a 2nd configuration, each TFT has an LDD structure and the impurity concentration of low concentration source and drain areas of a TFT for pixel of a 1st conductivity type is lower than the impurity concentration of low concentration source and drain areas of a TFT for driving circuit of the 1st conductivity type. In addition to effects by the LDD structure, the off-current of the TFT for pixel is reduced more and the on-current of the TFT for pixel is increased more as well to realize a liquid crystal display device which generates no display unevenness and includes a driving circuit part whose operating speed is faster. COPYRIGHT: (C)2005,JPO&NCIPI

9. 发明专利

JP2004045754A Semi-transmissive/reflective electrooptical device and electronic appliance using the same 审中-公开
公开(公告)号：JP2004045754A
公开(公告)日：2004-02-12
申请号：JP2002203007
申请日：2002-07-11
申请人： Seiko Epson Corp , セイコーエプソン株式会社
发明人： TAKENAKA SATOSHI
IPC分类号： G02F1/1335
摘要： PROBLEM TO BE SOLVED: To provide a semi-transmissive/reflective electrooptical device capable of increasing the quantity of display light in both of a reflection mode and a transmission mode, and an electronic appliance provided with it. SOLUTION: In the TFT array substrate 10 of a reflective electrooptical device 100, the back surface of a light reflection film 8a is provided with a lightguide reflection surface 8e for reflecting light made incident from the back surface side of a light transmissive substrate 10' and guiding the reflected light to the front surface (reflection surface 8f) of the light reflection film 8a opposing across a light transmission window 8d. Since light transmissive films 13a and 7a in a region surrounded by a frame-like projection 13b are removed, the reflection surface 8f can secure a wide area. Further, since the light transmissive films 13a and 7a at a part adjacent on the outer side to the frame-like projection 13b are removed and a groove 16 is formed, the lightguide reflection surface 8e has a wide area. COPYRIGHT: (C)2004,JPO

10. 发明专利

JP2004045753A Translucent/reflective electrooptical device and electronic appliance using the same 有权
公开(公告)号：JP2004045753A
公开(公告)日：2004-02-12
申请号：JP2002203006
申请日：2002-07-11
申请人： Seiko Epson Corp , セイコーエプソン株式会社
发明人： TAKENAKA SATOSHI
IPC分类号： G02F1/1335
CPC分类号： G02F1/133555 , G02F1/133504 , G02F2001/133776
摘要： PROBLEM TO BE SOLVED: To provide a translucent/reflective electrooptical device in which display light quantity in both of a reflection mode and a transmission mode is increased, and an electronic appliance provided with it. SOLUTION: In the TFT array substrate 10 of a reflective electrooptical device 100, the rear surface of a light reflection film 8a is provided with a light transmitting reflection surface 8f facing the light reflection film 8a with a light transmission window 8d therebetween and for reflecting light made incident from the back surface side of the a light transmissive substrate 10' and guiding it to the front surface of the light reflection film 8a. Thus, among the light made incident from the back surface side of the light transmissive substrate 10', even the light which is shielded by the light reflection film 8a and does not contribute to the display in the transmission mode conventionally is partially reflected on the light transmitting reflection surface 8e and contributes to the display. COPYRIGHT: (C)2004,JPO

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