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1. 发明专利

JP2006049688A Semiconductor device 审中-公开
标题翻译：半导体器件
公开(公告)号：JP2006049688A
公开(公告)日：2006-02-16
申请号：JP2004230642
申请日：2004-08-06
申请人： Sanyo Electric Co Ltd , 三洋電機株式会社
发明人： OKUDA TOSHIHIRO , SANO TORU , KANEKO SATOSHI , IHARA YOSHIKAZU , FUJIWARA HIDEJI
IPC分类号： H01L21/331 , H01L21/28 , H01L29/417 , H01L29/732
摘要： PROBLEM TO BE SOLVED: To solve the problem that, in the conventional semiconductor device, a collector buried diffusion layer creeps up more than necessary, resulting in making it difficult to obtain a desired breakdown voltage characteristic.
SOLUTION: The semiconductor device uses the STI method instead of the LOCOS method. A trench 11 is filled with an NSG film 12 deposited by high-density plasma CVD method. Due to this structure, an n-type buried diffusion layer 2 does not creep up more than necessary. The n-type buried diffusion layer 2 as a collector region and a p-type diffusion region 7 as an active base region are separated by a prescribed distance, and thereby a desired breakdown voltage characteristic can be realized. Since the thickness of an epitaxial layer 4 can be made thin while keeping the desired breakdown voltage characteristic, a high-frequency characteristic can also be improved.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：解决的问题为了解决在现有的半导体装置中，集电体埋入扩散层不必要地蠕变，导致难以获得期望的击穿电压特性的问题。
解决方案：半导体器件使用STI方法而不是LOCOS方法。沟槽11填充有通过高密度等离子体CVD法沉积的NSG膜12。由于这种结构，n型埋入扩散层2不会超过必要的范围。作为集电极区域的n型埋入扩散层2和作为有源基极区域的p型扩散区域7分开规定的距离，能够实现期望的击穿电压特性。由于能够使保持期望的击穿电压特性的外延层4的厚度变薄，因此也能够提高高频特性。版权所有（C）2006，JPO＆NCIPI

2. 发明专利

JP2004013520A Thermal noise generation circuit 有权
公开(公告)号：JP2004013520A
公开(公告)日：2004-01-15
申请号：JP2002166028
申请日：2002-06-06
申请人： Sanyo Electric Co Ltd , 三洋電機株式会社
发明人： MEYA MASATO , KANEKO SATOSHI
IPC分类号： G06F7/58
摘要： PROBLEM TO BE SOLVED: To provide a thermal noise generation circuit outputting thermal noise effectively by a simple circuit and to improve temperature characteristics of a direct current component especially. SOLUTION: A serial connection of resistors R1 and R2 is arranged between a power source VCC and a gland. The resistors R1 and R2 are constructed of polysilicon and provided with negative temperature characteristics. The dimension of the thermal noise is proportional to 4kT (k: a Boltzmann constant, T: an absolute temperature) and R (a resistance value). When the resistor has the negative temperature characteristic, the fluctuation of the generated thermal noise according to a temperature can be reduced. COPYRIGHT: (C)2004,JPO

3. 发明专利

JP2005038881A Semiconductor device and voltage dividing circuit 审中-公开
标题翻译：半导体器件和电压分压电路
公开(公告)号：JP2005038881A
公开(公告)日：2005-02-10
申请号：JP2003197067
申请日：2003-07-15
申请人： Sanyo Electric Co Ltd , 三洋電機株式会社
发明人： KANEKO SATOSHI
IPC分类号： H01L27/04 , H01L21/822 , H01L27/08 , H01L29/94
CPC分类号： H01L29/94 , H01L27/0805
摘要： PROBLEM TO BE SOLVED: To reduce a unit capacitor element array in size, to improve a semiconductor device in accuracy, and to provide a voltage dividing circuit.
SOLUTION: The semiconductor device is equipped with capacitor elements C1 and C2 composed of a plurality of unit capacitor elements Cu. The lower electrode leading electrodes 8 of the unit capacitor elements Cu of the capacitor elements C1 and C2 are arranged around the whole upper electrodes 7 of the capacitor elements C1 and C2. The prescribed capacitor elements can be connected to the capacitor elements C1 and C2, and are set at prescribed capacitance so as to remove, at least, the influence of the parasitic capacitance of the capacitor elements C1 and C2. The prescribed capacitor elements can be formed of the capacitor elements C1 and C2.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：为了减小单元电容器元件阵列的尺寸，提高半导体器件的精度，并提供分压电路。解决方案：半导体器件配备有由多个单位电容器元件Cu组成的电容器元件C1和C2。电容器元件C1和C2的单位电容器元件Cu的下电极引出电极8布置在电容器元件C1和C2的整个上电极7周围。规定的电容器元件可以连接到电容器元件C1和C2，并且被设置为规定的电容，以便至少去除电容器元件C1和C2的寄生电容的影响。规定的电容器元件可以由电容器元件C1和C2形成。版权所有（C）2005，JPO＆NCIPI

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