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1. 发明专利

JP2008066701A Device for generating plasma, and method of generating plasma 审中-公开
标题翻译：用于产生等离子体的装置和产生等离子体的方法
公开(公告)号：JP2008066701A
公开(公告)日：2008-03-21
申请号：JP2007103928
申请日：2007-04-11
申请人： Samsung Electronics Co Ltd , 三星電子株式会社Samsung Electronics Co.,Ltd.
发明人： USHAKOV ANDREY , YURI TOLMACHEV , VOLYNETS VLADIMIR , PARK WON-TAEK , VASILY PASHKOVSKIY , PARK SUNG CHANG , LEE YUNG-HEE
IPC分类号： H01L21/3065 , H05H1/46
CPC分类号： H01J37/321 , H01J37/32091
摘要： PROBLEM TO BE SOLVED: To provide a device and a method for generating plasma employed for a semiconductor process. SOLUTION: The device for generating plasma is provided with: a chamber having a plasma generating space; a lower electrode section positioned within the chamber; an upper electrode section positioned within the chamber facing the lower electrode section to define a first plasma-generating source section; a second plasma-generating source section which is defined in the outer periphery of the upper electrode section in a position higher than the lower plane of the upper electrode section; and an electric power supply section which supplies electric power to the first and second plasma-generating source sections. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供用于产生用于半导体工艺的等离子体的装置和方法。解决方案：用于产生等离子体的装置设置有：具有等离子体产生空间的室; 位于所述室内的下电极部分; 位于所述腔室内的面对所述下部电极部分以限定第一等离子体产生源部分的上部电极部分; 第二等离子体产生源部分，其在比上电极部分的下平面高的位置限定在上电极部分的外周; 以及向第一等离子体产生源部供给电力的电力供给部。版权所有（C）2008，JPO＆INPIT

2. 发明专利

JP2008166822A Etching apparatus using neutral beam 审中-公开
标题翻译：使用中性光束的蚀刻装置
公开(公告)号：JP2008166822A
公开(公告)日：2008-07-17
申请号：JP2007340549
申请日：2007-12-28
申请人： Samsung Electronics Co Ltd , 三星電子株式会社Samsung Electronics Co.,Ltd.
发明人： JEON YUN-KWANG , LEE JIN-SEOK , LEE YUNG-HEE , KIM GI TAE
IPC分类号： H01L21/3065
CPC分类号： H01J37/3233 , H01J37/32357
摘要： PROBLEM TO BE SOLVED: To provide an etching apparatus using a neutral beam, which prevents neutralization means from being damaged and contaminations from being generated.
SOLUTION: The etching apparatus includes an electron emitting portion 13, by which an ion beam extracted from plasma by means of a plurality of grid 12 is smashed into an electron and converted to a neutral beam. Hence, the ion beam is prevented from physically colliding against the electron emission portion 13, and is converted into a neutral beam at high neutralization efficiency without loss of directional property and energy, so that the neutral beam having large area is produced, and a semiconductor wafer is etched uniformly.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种使用中性光束的蚀刻装置，其防止中和装置被损坏并且产生污染。解决方案：蚀刻装置包括电子发射部分13，通过多个栅极12将从等离子体提取的离子束捣碎成电子并转换成中性光束。因此，防止离子束与电子发射部分13物理碰撞，并且以高中和效率转换成中性光束，而不损失定向特性和能量，从而产生具有大面积的中性光束，并且半导体晶片被均匀地蚀刻。版权所有（C）2008，JPO＆INPIT

3. 发明专利

JP2007096299A Substrate processing device and substrate processing method 审中-公开
标题翻译：基板处理装置和基板处理方法
公开(公告)号：JP2007096299A
公开(公告)日：2007-04-12
申请号：JP2006249980
申请日：2006-09-14
申请人： Samsung Electronics Co Ltd , 三星電子株式会社Samsung Electronics Co.,Ltd.
发明人： JEON YUN-KWANG , LEE YUNG-HEE , LEE JIN-SEOK
IPC分类号： H01L21/302 , H01J37/305 , H05H1/46
CPC分类号： H01J37/321 , H01J37/32357
摘要： PROBLEM TO BE SOLVED: To provide a substrate processing device having a simple structure in which dielectric breakdown of an insulating film to be processed is reduced. SOLUTION: This device comprises: a substrate mounting part on which a substrate to be processed is mounted; a first plasma space and a second plasma space sequentially provided above the substrate mounting part; a first extraction electrode positioned between the first plasma space and the second plasma space for selectively extracting one from a positive ion and an electron of a plasma generated in the second plasma space; a second extraction electrode positioned between the first plasma space and the substrate mounting part for extracting the positive ion and the electron from the plasma of the first plasma space; and a vacuum chamber housing the substrate mounting part, the first plasma space and the second plasma space. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种具有简单结构的基板处理装置，其中要处理的绝缘膜的绝缘击穿减小。解决方案：该装置包括：基板安装部，其上安装有待加工的基板; 依次设置在所述基板安装部的上方的第一等离子体空间和第二等离子体空间; 位于第一等离子体空间和第二等离子体空间之间的第一提取电极，用于从第二等离子体空间中产生的等离子体的正离子和电子中选择性地提取一个; 位于第一等离子体空间和基板安装部之间的第二提取电极，用于从第一等离子体空间的等离子体中提取正离子和电子; 以及容纳基板安装部，第一等离子体空间和第二等离子体空间的真空室。版权所有（C）2007，JPO＆INPIT

4. 发明专利

JP2013222972A Graphene switching device including tunable barrier 有权
标题翻译：石墨切换装置，包括可调节障碍物
公开(公告)号：JP2013222972A
公开(公告)日：2013-10-28
申请号：JP2013085518
申请日：2013-04-16
申请人： Samsung Electronics Co Ltd , 三星電子株式会社Samsung Electronics Co.,Ltd.
发明人： DAVID SEO , KIM SANG-WOOK , PARK SEONG-JUN , YUN YOUNG-JUN , LEE YUNG-HEE , RI SHOSHO
IPC分类号： H01L29/66 , H01L21/336 , H01L29/06 , H01L29/78 , H01L29/786 , H01L29/80 , H01L51/05 , H01L51/30
CPC分类号： H01L29/775 , H01L29/1079 , H01L29/1606 , H01L29/42376 , H01L29/7781 , H01L29/7789
摘要： PROBLEM TO BE SOLVED: To provide a graphene switching device including a tunable barrier.SOLUTION: A graphene switching device includes: a first electrode and an insulating layer disposed in a first region and a second region of a semiconductor substrate, respectively; a plurality of metal particles formed on a surface of the semiconductor substrate between the first region and the second region; a graphene layer extending on the insulating layer from the plurality of metal particles; a second electrode facing the insulating layer on the graphene layer in the second region; a gate oxide covering the graphene layer; and a gate electrode on the gate oxide. The semiconductor substrate includes a tunable barrier that is a semiconductor forming an energy barrier between the graphene layer and the first electrode.
摘要翻译：要解决的问题：提供一种包括可调屏障的石墨烯开关装置。解决方案：石墨烯开关装置，包括：分别设置在半导体基板的第一区域和第二区域中的第一电极和绝缘层; 在所述第一区域和所述第二区域之间形成在所述半导体衬底的表面上的多个金属颗粒; 在所述绝缘层上从所述多个金属颗粒延伸的石墨烯层; 面向第二区域中的石墨烯层上的绝缘层的第二电极; 覆盖石墨烯层的栅极氧化物; 和栅极氧化物上的栅电极。半导体衬底包括可调谐势垒，其是在石墨烯层和第一电极之间形成能量势垒的半导体。

5. 发明专利

JP2008041651A Ion analysis system based on ion energy distribution analyzer using delayed electric field 有权
标题翻译：使用延迟电场的离子能分布分析仪的离子分析系统
公开(公告)号：JP2008041651A
公开(公告)日：2008-02-21
申请号：JP2007167630
申请日：2007-06-26
申请人： Samsung Electronics Co Ltd , 三星電子株式会社Samsung Electronics Co.,Ltd.
发明人： LEE YUNG-HEE , USHAKOV ANDREY , YURI TOLMACHEV , VOLYNETS VLADIMIR , PARK WON-TAEK , VASILY PASHKOVSKIY
IPC分类号： H01J49/48 , H01L21/265 , H01L21/3065
CPC分类号： H01L21/67069 , H01J37/32412 , H01J37/32422 , H01L21/67253
摘要： PROBLEM TO BE SOLVED: To provide an ion analysis system for measuring an ion energy distribution at a number of points at a semiconductor circuit manufacturing process.
SOLUTION: The system is provided with at least two ion flux sensors 331, 332 combined into one system for measuring an ion energy distribution function. The ion flux sensor is equipped with a cell having pores with a size of less than 50 μm.
COPYRIGHT: (C)2008,JPO&INPIT

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