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1. 发明专利

JP2008113000A Semiconductor element capable of tuning macro and micro frequencies, and antenna and frequency tuning circuit including the semiconductor element 有权
标题翻译：具有微调和微波频率的半导体元件，以及包含半导体元件的天线和频率调谐电路
公开(公告)号：JP2008113000A
公开(公告)日：2008-05-15
申请号：JP2007277548
申请日：2007-10-25
申请人： Samsung Electronics Co Ltd , 三星電子株式会社Samsung Electronics Co.,Ltd.
发明人： JUNG CHANG-WON , CHOI JUNG-HAN , SO INSO , KIM YOUNG-EIL
IPC分类号： H01L29/861 , H01L21/329 , H01L21/822 , H01L27/04 , H01L29/868 , H01L29/93 , H01Q5/00 , H01Q5/10 , H01Q5/321 , H01Q9/42
CPC分类号： H01L29/0821 , H01L27/0676 , H01L27/0808 , H01L27/0814 , H01L29/0804 , H01L29/73 , H01L29/868 , H01L29/93 , H01Q9/0407
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor element capable of tuning macro and micro frequencies, and to provide an antenna and a frequency tuning circuit including the semiconductor element, the semiconductor element in which a PIN diode and a varactor diode are configured by a single element, thereby solving insertion loss, complexity of DC power supply circuit, increase in circuit volume, deterioration of varactor diode linearity, and the like. SOLUTION: The present invention relates to a semiconductor element capable of tuning macro and micro frequencies, and an antenna and a frequency tuning circuit including the semiconductor element. The semiconductor element includes a first semiconductor and a second semiconductor having a same polarity, a third semiconductor disposed between the first semiconductor and the second semiconductor and having a polarity differing from that of the first semiconductor and the second semiconductor, and a pair of intrinsic semiconductors respectively disposed between the first semiconductor and the third semiconductor and between the third semiconductor and the second semiconductor. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：为了提供能够调谐宏观和微观频率的半导体元件，并且提供包括半导体元件的天线和频率调谐电路，其中配置有PIN二极管和变容二极管的半导体元件被配置通过单个元件，由此解决插入损耗，直流电源电路的复杂性，电路容量的增加，变容二极管线性的劣化等。解决方案：本发明涉及能够调谐宏观和微观频率的半导体元件，以及包括半导体元件的天线和频率调谐电路。半导体元件包括具有相同极性的第一半导体和第二半导体，设置在第一半导体和第二半导体之间并且具有与第一半导体和第二半导体的极性不同的极性的第三半导体以及一对本征半导体分别设置在第一半导体和第三半导体之间以及第三半导体和第二半导体之间。版权所有（C）2008，JPO＆INPIT

2. 发明专利

JP2007202130A Rf module, multi-rf module, and rf module fabricating method 有权
标题翻译： RF模块，多RF模块和RF模块制造方法
公开(公告)号：JP2007202130A
公开(公告)日：2007-08-09
申请号：JP2006347859
申请日：2006-12-25
申请人： Samsung Electronics Co Ltd , 三星電子株式会社Samsung Electronics Co.,Ltd.
发明人： HONG SEOG-WOO , SO INSO , KA HEICHU , PARK HAE-SEOK , HWANG JUN-SIK , LEE JOO HO
IPC分类号： H01L41/09 , H01L41/18 , H01L41/22 , H01L41/23 , H01L41/311 , H03H3/02 , H03H9/17 , H03H9/54 , H03H9/70 , H04B1/3822 , H04B1/40
CPC分类号： H03H9/0547 , H01L2924/0002 , H03H9/587 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide an RF module, a multi-RF module, and an RF module fabricating method. SOLUTION: The RF module comprises a base substrate 100, a first element 150 provided on the base substrate 100 and for processing an RF signal, a second element 250 separated from and disposed above the the first element 150 for processing the RF signal, a cap substrate 300 joined with the base substrate 100, enclosing the first and second elements 150, 250, and having a plurality of through electrodes 310 formed therein for electrically connecting the first and second elements 150, 250 to the outside, and a bonding pad 190 for enclosing and joining the base substrate 100 and the cap substrate 300 and electrically connecting the first and second elements 150, 250 and the through electrodes 310. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供RF模块，多RF模块和RF模块制造方法。解决方案：RF模块包括基底基板100，设置在基底基板100上并用于处理RF信号的第一元件150，与第一元件150分离并设置在第一元件150上方的第二元件250，用于处理RF信号与基底基板100连接的盖基板300，包围第一元件150和第二元件250，并且具有形成在其中的多个通孔310，用于将第一元件150和第二元件250与外部电连接，垫190，用于封装和连接基底基板100和盖基板300，并电连接第一和第二元件150,250和通孔电极310.（C）2007，JPO＆INPIT

3. 发明专利

JP2007028612A Film bulk acoustic resonator and its manufacturing method 有权
标题翻译：电影胶卷声谐振器及其制造方法
公开(公告)号：JP2007028612A
公开(公告)日：2007-02-01
申请号：JP2006189256
申请日：2006-07-10
申请人： Samsung Electronics Co Ltd , 三星電子株式会社Samsung Electronics Co.,Ltd.
发明人： KIM DUCK-HWAN , KIM CHUL SOO , PARK YUN-KWON , SUL SANG CHUL , KA HEICHU , SO INSO
IPC分类号： H03H9/17 , H01L41/09 , H01L41/18 , H01L41/187 , H01L41/22 , H01L41/23 , H01L41/316 , H03H3/02
CPC分类号： H03H9/172 , H03H3/02 , H03H9/02015 , H03H9/02118
摘要： PROBLEM TO BE SOLVED: To provide a FBAR and its manufacturing method capable of reducing manufacturing processes that simplify the structure of the FBAR, and of stably mounting a resonating part on a substrate. SOLUTION: The FBAR comprises the substrate 101 a lower electrode 110 formed on the upper surface of the substrate 101; a piezoelectric film 113, formed on the upper surface of the lower electrode 110 and having a crystal axis formed by tilt of all the reflections generated, when acoustic waves advance to the lower electrode 110; and an upper electrode 115 formed on the upper surface of the piezoelectric film 113. The piezoelectric film 113 is formed of a high-refractive index medium, and the lower electrode 110 is formed of a low-refractive index medium. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种FBAR及其制造方法，其能够减少简化FBAR的结构的制造工艺，并且将谐振部件稳定地安装在基板上。解决方案：FBAR包括基板101，形成在基板101的上表面上的下电极110; 形成在下部电极110的上表面上并且当声波前进到下部电极110时具有通过产生的全部反射的倾斜而形成的晶体轴的压电膜113; 以及形成在压电膜113的上表面上的上电极115.压电膜113由高折射率介质形成，下电极110由低折射率介质形成。版权所有（C）2007，JPO＆INPIT

4. 发明专利

JP2006217606A Piezoelectric thin-film resonator and manufacture method therefor 有权
标题翻译：压电薄膜谐振器及其制造方法
公开(公告)号：JP2006217606A
公开(公告)日：2006-08-17
申请号：JP2006021686
申请日：2006-01-31
申请人： Samsung Electronics Co Ltd , 三星電子株式会社Samsung Electronics Co.,Ltd.
发明人： KA HEICHU , HONG SEOG-WOO , SO INSO , CHOI HYUNG
IPC分类号： H03H9/17 , H01L41/09 , H01L41/18 , H01L41/22 , H01L41/29 , H03H3/007
CPC分类号： H03H3/02 , H03H9/174 , Y10T29/42
摘要： PROBLEM TO BE SOLVED: To provide an air-gap type FBAR and a manufacture method which can form air gaps through etching process, while reducing damages to a resonator. SOLUTION: It comprises a substrate by which the air gap of predetermined capacity is etched and penetrated; the resonator in the upper part of the air gap with a first electrode, a piezo-electric film, and a second electrode laminated thereon, in this order; and an etching stop layer which is prepared between the air gap and the resonator, and restricts an etching depth at the time of formation of the air gap, to prevent from damages to the resonator. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种气隙型FBAR和通过蚀刻工艺形成气隙的制造方法，同时减少对谐振器的损伤。解决方案：它包括一个衬底，通过该衬底蚀刻并穿透预定容量的气隙; 该气隙上部的谐振器依次层叠有第一电极，压电膜和第二电极; 以及在气隙和谐振器之间制备的蚀刻停止层，并且限制形成气隙时的蚀刻深度，以防止对谐振器的损坏。版权所有（C）2006，JPO＆NCIPI

5. 发明专利

JP2008054337A Duplexer fabricated utilizing substrate bonding, and fabricating method thereof 有权
标题翻译：双层复合材料利用基板结合及其制造方法
公开(公告)号：JP2008054337A
公开(公告)日：2008-03-06
申请号：JP2007246430
申请日：2007-09-25
申请人： Samsung Electronics Co Ltd , 三星電子株式会社Samsung Electronics Co.,Ltd.
发明人： PARK YUN-KWON , SO INSO , KA HEICHU , SONG IL-JONG , KIM DUCK-HWAN
IPC分类号： B81B3/00 , H03H9/70 , B81C1/00 , H01L41/08 , H01L41/09 , H01L41/18 , H01L41/22 , H01L41/23 , H01L41/313 , H03H3/02 , H03H9/17 , H03H9/54
CPC分类号： H03H9/173 , H03H3/02 , H03H9/02133 , H03H9/0571 , H03H9/587 , H03H9/706 , Y10T29/42
摘要： PROBLEM TO BE SOLVED: To provide a method of fabricating a duplexer simply and robustly by utilizing a substrate bonding process. SOLUTION: The method of fabricating the duplexer utilizing an air-gap type FBAR includes the steps of: fabricating a first substrate part in which a plurality of layered resonance parts are formed; fabricating a second substrate part in which a plurality of air gaps and an isolation part formed therebetween are produced; and bonding the first substrate part and the second substrate part. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：通过利用基板接合工艺简单且鲁棒地提供制造双工器的方法。解决方案：利用气隙型FBAR制造双工器的方法包括以下步骤：制造其中形成有多个层状共振部件的第一基板部分; 制造其中形成有多个气隙和形成在其间的隔离部分的第二基板部分; 以及接合所述第一基板部分和所述第二基板部分。版权所有（C）2008，JPO＆INPIT

6. 发明专利

JP2007035640A Mems switch 审中-公开
标题翻译： MEMS开关
公开(公告)号：JP2007035640A
公开(公告)日：2007-02-08
申请号：JP2006204866
申请日：2006-07-27
申请人： Samsung Electronics Co Ltd , 三星電子株式会社Samsung Electronics Co.,Ltd.
发明人： KWON SANG-WOOK , KIM JUN-O , SO INSO , LEE SANG HOON , KIM DONG KYUN , JEONG HEE-MOON , HONG YOUNG-TACK , KIM JONG-SEOK , KIM CHE-HEUNG
IPC分类号： H01H59/00 , B81B3/00
CPC分类号： H01H59/0009 , H01H2057/006
摘要： PROBLEM TO BE SOLVED: To provide an MEMS switch driven by piezoelectric force and electrostatic force and capable of preventing stiction between contacts.
SOLUTION: This MEMS switch comprises a substrate 110, a first contact 120 located in a prescribed first area on an upper surface of the substrate 110, a supporting layer 130 floating and separated from the upper surface of the substrate 110 by a prescribed distance, a second contact 140 formed in a lower surface of the supporting layer 130, a first actuator 150 moving the supporting layer 130 in a prescribed direction by using the electrostatic force, and a second actuator 160 moving the supporting layer 130 in a prescribed direction by using the piezoelectric force.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供由压电力和静电力驱动并能够防止触点之间的静摩擦的MEMS开关。解决方案：该MEMS开关包括基板110，位于基板110的上表面上的规定的第一区域中的第一触点120，从基板110的上表面浮动并与规定的分隔开的支撑层130 形成在支撑层130的下表面的第二触点140，通过使用静电力使支撑层130沿预定方向移动的第一致动器150以及沿着规定方向移动支撑层130的第二致动器160 通过使用压电力。版权所有（C）2007，JPO＆INPIT

7. 发明专利

JP2007027762A Packaging chip equipped inductor 有权
标题翻译：包装芯片设备电感器
公开(公告)号：JP2007027762A
公开(公告)日：2007-02-01
申请号：JP2006197139
申请日：2006-07-19
申请人： Samsung Electronics Co Ltd , 三星電子株式会社Samsung Electronics Co.,Ltd.
发明人： SHIM DONG-HA , SO INSO , KIM DUCK-HWAN , PARK YUN-KWON , YUN SEOK-CHUL , NAM KUANG-WOO
IPC分类号： H01L23/12 , H01L21/822 , H01L27/04
CPC分类号： H01L23/10 , H01F17/0006 , H01F27/027 , H01L23/49838 , H01L23/645 , H01L2924/16152
摘要： PROBLEM TO BE SOLVED: To enhance the quality of a chip, while reducing its size.
SOLUTION: An inductor is realized by utilizing a sealing material that is laminated over a large width on the edges of the substrate and is used for packaging. A packaging chip comprises a substrate 100, on which a circuit element 110 is mounted; a port 120 formed on the top surface of the substrate; a sealing line 130 that is electrically connected to terminals 140 and 150 of the circuit element and to the port 120 on the substrate; and a packaging substrate 160, that is bonded to the substrate 100 through the sealing line 130 and packages the circuit element. The sealing line 130 is made of a conductive material, thereby serving as an inductor, and thus, a packaging chip housing an inductor can be realized in a smaller size.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提高芯片的质量，同时减小其尺寸。解决方案：通过利用层叠在基板边缘上的大宽度上的密封材料来实现电感器并且用于包装。包装芯片包括其上安装有电路元件110的基板100; 形成在基板的顶表面上的端口120; 密封线130，其电连接到电路元件的端子140和150以及衬底上的端口120; 以及通过密封线130接合到基板100并封装电路元件的封装基板160。密封线130由导电材料制成，从而用作电感器，因此可以以更小的尺寸实现容纳电感器的封装芯片。版权所有（C）2007，JPO＆INPIT

8. 发明专利

JP2007027126A Mems switch and its manufacturing method 有权
标题翻译： MEMS开关及其制造方法
公开(公告)号：JP2007027126A
公开(公告)日：2007-02-01
申请号：JP2006195341
申请日：2006-07-18
申请人： Samsung Electronics Co Ltd , 三星電子株式会社Samsung Electronics Co.,Ltd.
发明人： KIM JONG-SEOK , SO INSO , LEE SANG HOON , KWON SANG-WOOK , KIM DUCK-HWAN , PARK YUN-KWON , JEONG HEE-MOON , HONG YOUNG-TACK , KIM CHE-HEUNG , YUN SEOK-CHUL , NAM KUANG-WOO
IPC分类号： H01H61/00 , B81B3/00 , B81C1/00 , B81C3/00 , H01H11/00 , H01H37/52 , H01H49/00
CPC分类号： H01H61/02 , H01H61/063 , H01H2061/006
摘要： PROBLEM TO BE SOLVED: To provide a MEMS (Micro Electro Mechanical System) switch capable of being driven with low voltage, and to provide its manufacturing method. SOLUTION: The disclosed MEMS switch comprises a lower board having a signal line formed on the upper face, an upper board installed on the upper face of the lower board at a predetermined space and having a membrane layer formed on the lower face and a cavity formed inside, a bimetal layer installed inside the cavity on the upper face of the membrane layer, a heating layer installed on the lower face of the membrane layer, and a contact member formed on the lower face of the heating layer for contacting or leaving the signal line. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供能够以低电压驱动的MEMS（微机电系统）开关，并提供其制造方法。解决方案：所公开的MEMS开关包括在上表面上形成有信号线的下板，上板以预定的空间安装在下板的上表面上，并且在下表面上形成有膜层，形成在内部的空腔，安装在膜层上表面的空腔内的双金属层，安装在膜层下表面的加热层，以及形成在加热层的下表面上的接触构件，用于接触或离开信号线。版权所有（C）2007，JPO＆INPIT

9. 发明专利

JP2006141029A Filter using one trimming inductor 审中-公开
标题翻译：过滤器使用一个TRIMMING电感器
公开(公告)号：JP2006141029A
公开(公告)日：2006-06-01
申请号：JP2005326277
申请日：2005-11-10
申请人： Samsung Electronics Co Ltd , 三星電子株式会社Samsung Electronics Co.,Ltd.
发明人： PARK YUN-KWON , KIM DUCK-HWAN , NAM KUANG-WOO , SO INSO , YUN SEOK-CHUL , KA HEICHU , KIM JONG-SEOK
IPC分类号： H03H9/54 , H01F27/00 , H01F27/42 , H01L41/09 , H01L41/18 , H03H9/02 , H03H9/17
CPC分类号： H03H9/0542 , H03H9/542 , H03H9/564 , H03H9/566
摘要： PROBLEM TO BE SOLVED: To provide a filter which can be small-sized by using one trimming inductor. SOLUTION: The filter includes: a substrate with a first port, a second port and a ground port which are formed on the upper surface of the substrate and are electrically connectable with an external terminal; first and second series-connected resonators directly connecting the first port and the second port in the substrate; a first shunt resonator connected to a node formed between the first port and the first series-connected resonator on the substrate; a second shunt resonator connected to a node formed between the first and second series-connected resonators on the substrate; and a trimming inductor having one end connected with each of the first and second shunt resonators and another end connected with the ground port. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：通过使用一个微调电感器来提供可以小型化的滤波器。滤波器包括：具有第一端口，第二端口和接地端口的基板，其形成在基板的上表面上并且可与外部端子电连接; 第一和第二串联谐振器，直接连接基板中的第一端口和第二端口; 连接到形成在基板上的第一端口和第一串联谐振器之间的节点的第一并联谐振器; 连接到形成在基板上的第一和第二串联连接的谐振器之间的节点的第二并联谐振器; 以及修整电感器，其一端与第一和第二并联谐振器中的每一个连接，另一端与接地端口连接。版权所有（C）2006，JPO＆NCIPI

10. 发明专利

JP2007273451A Piezoelectric mems switch and manufacturing method therefor 审中-公开
标题翻译：压电MEMS开关及其制造方法
公开(公告)号：JP2007273451A
公开(公告)日：2007-10-18
申请号：JP2007001638
申请日：2007-01-09
申请人： Samsung Electronics Co Ltd , 三星電子株式会社Samsung Electronics Co.,Ltd.
发明人： KIM JONG-SEOK , SO INSO , LEE SANG HOON , KWON SANG-WOOK , LEE CHANG-SEUNG , HONG YOUNG-TACK , KIM CHE-HEUNG
IPC分类号： H01H57/00 , B81B3/00 , B81C1/00 , H01H49/00 , H01L41/09 , H01L41/18 , H01L41/22 , H01L41/29 , H02N2/00
CPC分类号： H01H57/00 , H01H2057/006 , Y10T403/7026
摘要： PROBLEM TO BE SOLVED: To provide a piezoelectric MEMS switch eliminating the process of enforcing the etching of the back side of a substrate as conventionally performed, and also eliminating process constraints, by improving the structure as a piezoelectric actuator is formed, before an RF signal line is formed. SOLUTION: The piezoelectric MEMS switch includes a substrate 101, a first fixed signal line 103 and a second fixed signal line 105, formed symmetrically on the upper plane of the substrate 101 by holding a predetermined space G; a vertically actuating piezo-electric actuator 130, which is arranged in line with the first fixed signal line 103 and the second fixed signal line 105 in space, and in which one edge is held by the substrate; and a movable signal line 150, in which at least one side is connected to the upper plane of the piezoelectric actuator 130, one edge is connected to one of the first fixed signal line 103 or the second fixed signal line 105, and other lines are connected to or disconnected from either of the first fixed signal line 103 or the second fixed signal line 105. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：为了提供一种压电MEMS开关，消除了如常规执行的对基板背面的蚀刻的过程，并且还消除了工艺限制，在形成压电致动器的结构之前，形成了形成RF信号线。解决方案：压电MEMS开关包括通过保持预定空间G对称地形成在基板101的上平面上的基板101，第一固定信号线103和第二固定信号线105; 垂直致动的压电致动器130，其在空间中与第一固定信号线103和第二固定信号线105成一直线，并且其中一个边缘被基板保持; 以及可动信号线150，其中至少一侧连接到压电致动器130的上平面，一个边缘连接到第一固定信号线103或第二固定信号线105中的一个，其他线是连接到第一固定信号线103或第二固定信号线105中的任何一个或与其断开。版权所有：（C）2008，JPO＆INPIT

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