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1. 发明专利

JP2006133759A System and method for manufacturing liquid crystal display 审中-公开
标题翻译：用于制造液晶显示器的系统和方法
公开(公告)号：JP2006133759A
公开(公告)日：2006-05-25
申请号：JP2005293467
申请日：2005-10-06
申请人： Samsung Electronics Co Ltd , 三星電子株式会社Samsung Electronics Co.,Ltd.
发明人： KIM JIN-SUNG , RI INKO , WON MIN-YOUNG , LEE HYUN-SU
IPC分类号： G02F1/13 , G02F1/1341
CPC分类号： G02F1/1341 , G02F2001/13415
摘要： PROBLEM TO BE SOLVED: To provide a system and a method for manufacturing a liquid crystal display having the advantage of higher dropping speed of a liquid crystal (LC), precise control of the amount dropped of the LC and reduced attachment and detachment time when replacing the LC.
SOLUTION: The system for manufacturing the liquid crystal display includes a liquid crystal vessel storing the LC, a liquid crystal nozzle for dropping the LC, a liquid crystal pressurizer configured to draw a predetermined amount of the LC from the vessel and discharge the drawn LC into the nozzle, and a valve alternately communicating the pressurizer with the vessel or with the nozzle.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：为了提供具有液晶（LC）的下降速度更高的优点的液晶显示器的制造系统和方法，精确地控制LC的下降量和减少的附着和分离更换LC时的时间。解决方案：用于制造液晶显示器的系统包括存储LC的液晶容器，用于滴下LC的液晶喷嘴，液晶加压器，其构造成从容器中抽取预定量的LC并将其排出将抽出的LC引入喷嘴，并且阀将交换器与容器或喷嘴交替地连通。版权所有（C）2006，JPO＆NCIPI

2. 发明专利

JP2008199017A Chuck assembly and high density plasma device using same 审中-公开
标题翻译：使用相同的卡盘组件和高密度等离子体装置
公开(公告)号：JP2008199017A
公开(公告)日：2008-08-28
申请号：JP2008026699
申请日：2008-02-06
申请人： Samsung Electronics Co Ltd , 三星電子株式会社Samsung Electronics Co.,Ltd.
发明人： RI SOKON , CHOI MIN HO , PARK SUNG-UK , KIM JIN-SUNG , PARK JONG-SUK , KIM DAE-HYUN
IPC分类号： H01L21/683 , C23C16/458 , C23C16/50 , H01L21/205 , H01L21/3065
CPC分类号： H01L21/68735 , H01L21/68742
摘要： PROBLEM TO BE SOLVED: To provide a chuck assembly that reduces damage to the film quality of a wafer backside due to plasma during a high density plasma processing, and a high density plasma device using same. SOLUTION: The chuck assembly 150 includes a chuck 151 on an upper surface of which a semiconductor substrate 90 is mounted and around outer peripheral portion of which a plurality of pin holes is formed, a substrate guide 159 to prevent the separation of the semiconductor substrate 90 mounted on an upper surface of the chuck 151 from the chuck 151, a fixed plate 158 disposed under the chuck 151, a lift pin 157 which is not only fitted in a fixed plate 158 but also insertedly disposed in a pin hole 152a while being formed with extension to the position contiguous to a top surface of the chuck 151, and a chuck lifter 156 to lower and raise the chuck 151 through the fixed plate 158. This results in reducing damage to the film quality of the wafer backside due to plasma generated during the high density plasma processing. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种卡盘组件，其减少了在高密度等离子体处理期间由等离子体引起的晶片背面的膜质量的损坏，以及使用其的高密度等离子体装置。解决方案：卡盘组件150包括在其上表面上安装有半导体基板90并且围绕其形成有多个销孔的外周部分的卡盘151，用于防止分离从卡盘151安装在卡盘151的上表面上的半导体基板90，设置在卡盘151下方的固定板158，不仅安装在固定板158上而且插入地设置在销孔152a中的升降销157 同时形成为延伸到与卡盘151的顶表面相邻的位置，以及卡盘升降器156，以通过固定板158降低和升高卡盘151.这导致减少对晶片背面的膜质量的损害，由此在高密度等离子体处理期间产生的等离子体。版权所有（C）2008，JPO＆INPIT

3. 发明专利

JP2005039293A Method of cleaning cmp pad conditioning disk 审中-公开
标题翻译：清洗CMP抛光调节盘的方法
公开(公告)号：JP2005039293A
公开(公告)日：2005-02-10
申请号：JP2004288276
申请日：2004-09-30
申请人： Samsung Electronics Co Ltd , 三星電子株式会社
发明人： CHO SUNG-BUM , CHOI BAIK-SOON , KIM JIN-SUNG , SAI KEISO
IPC分类号： B24B53/14 , B24B53/017 , B24B53/12 , B24D3/00 , B24D3/06 , B24D7/00 , B24D7/06 , B24D7/14 , B24D18/00 , H01L21/304
CPC分类号： B24B53/017 , B24B53/12 , B24D3/06 , B24D7/06 , B24D18/0072 , Y10S438/959
摘要： PROBLEM TO BE SOLVED: To provide a method of cleaning a CMP (Chemical Mechanical Polishing) pad conditioning disk which regenerates a life-expired CMP pad conditioning disk to reduce the cost thereof and to extend the life thereof. SOLUTION: The method of cleaning the CMP pad conditioning disk comprises (1) a step for soaking the CMP pad conditioning disk which was already used in the CMP process in a predetermined chemical to remove a membranous by-product present between the polishing grains, (2) a step for cleaning the conditioning disk from which the membranous by-product is moved with a deionized water and (3) a step for drying the cleaned conditioning disk. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种清洁CMP（化学机械抛光）垫调节盘的方法，其再生寿命过长的CMP垫调节盘以降低其成本并延长其寿命。解决方案：清洁CMP垫调节盘的方法包括（1）将CMP工艺中已经使用的CMP垫调节盘浸入预定化学品中以去除抛光之间存在的膜副产物的步骤颗粒，（2）用去离子水清洗膜副产物的调理盘的步骤和（3）用于干燥清洁的调理盘的步骤。版权所有（C）2005，JPO＆NCIPI

4. 发明专利

JP2005040946A Cmp pad conditioner 审中-公开
标题翻译： CMP PAD调节器
公开(公告)号：JP2005040946A
公开(公告)日：2005-02-17
申请号：JP2004288275
申请日：2004-09-30
申请人： Samsung Electronics Co Ltd , 三星電子株式会社
发明人： CHO SUNG-BUM , CHOI BAIK-SOON , KIM JIN-SUNG , SAI KEISO
IPC分类号： B24B53/14 , B24B53/017 , B24B53/12 , B24D3/00 , B24D3/06 , B24D7/00 , B24D7/06 , B24D7/14 , B24D18/00 , H01L21/304 , B24B37/00 , B24B53/02
CPC分类号： B24B53/017 , B24B53/12 , B24D3/06 , B24D7/06 , B24D18/0072 , Y10S438/959
摘要： PROBLEM TO BE SOLVED: To provide a CMP pad conditioner having long life for efficiently conditioning a grinding pad. SOLUTION: The CMP pad conditioner 50 is equipped with a bar 52 whose end is turnably installed on a specified fixture, a conditioning disk holder mounting part 54 formed on the one side of the bar 52, a conditioning disk holder 56 mounted to the conditioning disk holder mounting part 54, and a conditioning disk 58 which an area divided by the size of a grinding grain is partitioned on the surface mounted to the conditioning disk holder 56. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种具有长寿命以有效调节研磨垫的CMP垫调节器。解决方案：CMP垫调节器50配备有杆52，杆52的端部可转动地安装在指定的夹具上，形成在杆52的一侧的调节盘保持器安装部54，调节盘保持器56，安装到调理盘保持器安装部分54和调整盘58，其面积除以研磨颗粒的尺寸在安装到调节盘保持器56的表面上分隔。（C）2005年，JPO和NCIPI

5. 发明专利

JP2004165660A Method of forming porous material film of semiconductor device 有权
公开(公告)号：JP2004165660A
公开(公告)日：2004-06-10
申请号：JP2003378718
申请日：2003-11-07
申请人： Samsung Electronics Co Ltd , 三星電子株式会社
发明人： LEE SENREI , JEONG HYUN DAM , KIM JIN-SUNG , KIN EINAN
IPC分类号： H01L21/768 , H01L21/3105 , H01L21/316 , H01L21/76
CPC分类号： H01L21/02129 , H01L21/02131 , H01L21/02271 , H01L21/02337 , H01L21/02348 , H01L21/3105 , H01L21/31625 , H01L21/7682 , H01L2221/1047 , Y10S438/96
摘要： PROBLEM TO BE SOLVED: To provide a method of forming a porous material film permitting the radical removal of a carbon residue and the generation of pores in an inorganic material film containing impurities, and a method of manufacturing a high integration semiconductor device adopting the porous material film.
SOLUTION: There is provided a method of forming the porous material film of a semiconductor device. This method comprises the formation of a material film containing impurities reacting with a water molecule on a substrate. The substrate having the material film is cured under the conditions having a high pressure higher than atmospheric pressure and a high temperature higher than a steam atmosphere and a room temperature, so as to generate pores in the material film.
COPYRIGHT: (C)2004,JPO

6. 发明专利

JP2004056129A Apparatus which dries semiconductor substrate by means of azeotrope mixture layer and drying method by using the apparatus 审中-公开
公开(公告)号：JP2004056129A
公开(公告)日：2004-02-19
申请号：JP2003187268
申请日：2003-06-30
申请人： Samsung Electronics Co Ltd , 三星電子株式会社
发明人： YI HUN-JUNG , KO YONG-KYUN , JUN PIL-KWON , PARK SANG-O , CHON SANG-MOON , KIM JIN-SUNG , LIM KWANG-SHIN
IPC分类号： F26B3/04 , F26B9/06 , F26B21/00 , F26B23/04 , H01L21/00 , H01L21/304 , H01L21/306
CPC分类号： H01L21/02052 , H01L21/02057 , H01L21/67028 , H01L21/67034
摘要： PROBLEM TO BE SOLVED: To provide an apparatus which dries semiconductor substrates by means of an azeotrope mixture layer.
SOLUTION: This drying apparatus has a liquid tank (1) which contains a liquid (5), a chamber (3) provided over the liquid tank, a dispenser (11) which supplies an organic solvent to the surface of the liquid. When the organic solvent is supplied through the dispenser, an azeotrope mixture layer (5a) is formed on the surface of the liquid, and an organic solvent layer (11a) is formed over the azeotrope mixture layer. The organic solvent layer and atmosphere over it are heated by a heater (13). The inside of the chamber is filled with a dry gas supplied through a dry gas pipe (17).
COPYRIGHT: (C)2004,JPO

7. 发明专利

JPH11219940A MANUFACTURE OF CATHODE FOR PLASMA ETCHING APPARATUS AND CATHODE MANUFACTURED THEREBY 失效
公开(公告)号：JPH11219940A
公开(公告)日：1999-08-10
申请号：JP26941698
申请日：1998-09-24
申请人： SAMSUNG ELECTRONICS CO LTD
发明人： KIM JIN-SUNG , RI EIKYU , CHIN KYOMAN , SAI KEISO
IPC分类号： H05H1/46 , H01J9/14 , H01J17/04 , H01J37/32 , H01L21/302 , H01L21/306 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing a cathode for a plasma etching apparatus which can previously remove a particle generating source to minimize a defect rate, and also to provide the cathode. SOLUTION: A step of etching a silicon substrate to be carried out includes a hole formation step S4 of making a plurality of holes for introduction of a gas into an etching chamber, a physical surface treatment step S6 of polishing a surface of the substrate with use of a slurry, and a chemical surface treatment step S10 of removing projections or the like remaining on inner faces of the holes made in the substrate and on the surface of the substrate by utilizing potassium hydroxide. Accordingly when the surface of the substrate and the inner faces of the holes to be manufactured as cathodes are made smooth, particle generating sources can be previously removed, thus minimizing a fraction defective and improving a reliability of a semiconductor element.

8. 发明专利

JP2002305201A METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
公开(公告)号：JP2002305201A
公开(公告)日：2002-10-18
申请号：JP2002005054
申请日：2002-01-11
申请人： SAMSUNG ELECTRONICS CO LTD
发明人： RI EIKYU , KIM TAE-RYONG , KIM JIN-SUNG , KIM JIN-JOO , AN JUNG-SOO , SONG JONG-KOOK
IPC分类号： H01L21/3213 , H01L21/302 , H01L21/304 , H01L21/306 , H01L21/308 , H01L21/3205
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device, which can prevent particle contamination. SOLUTION: This manufacturing method includes a stage of depositing a deposition film, having a different thickness, and a stage of planarizing the deposition film. A photoresist film 30 is applied on the deposition film. The edge part of the applied photoresist film 30 is removed, to expose the dead space of the deposition film. At this time, the dead space corresponds to a part of the initial deposition film not removed in planarizing process. The deposition film exposed at the dead space is etched, and a photoresist film 30 remaining on a wafer 10 is removed, thus a desired pattern layer 40 is made.

9. 发明专利

JP2001143499A DETECTION DEVICE FOR DETECTIVE CELL OF SEMICONDUCTOR MEMORY, AND METHOD THEREFOR 失效
公开(公告)号：JP2001143499A
公开(公告)日：2001-05-25
申请号：JP2000280714
申请日：2000-09-14
申请人： SAMSUNG ELECTRONICS CO LTD
发明人： KIM JIN-SUNG
IPC分类号： G01R31/28 , G11C11/413 , G11C29/00 , G11C29/04 , G11C29/14 , G11C29/50
摘要： PROBLEM TO BE SOLVED: To provide a detection device for a defective cell of a semiconductor memory and its method. SOLUTION: This device is a memory cell array 100, comprising many memory blocks 110-114, the memory blocks 110-114 are many defective cell detectors 140-144 corresponding to each of the memory cell array 100 having many memory cells address-selected in accordance with the prescribed memory address and many memory blocks 110-114, and the device is provided with many defective cell detectors 140-144 which detect the existence of a defect of a memory cell address-selected by comparing a current generated in corresponding memory blocks 110-114 with the prescribed reference current. The existence of each defect of selected memory cell is outputted by detecting a current flowing in each of many memory blocks 110-114 by a memory address.

10. 发明专利

JP2002313863A MICROSCOPE APPARATUS FOR SEMICONDUCTOR WAFER INSPECTION 审中-公开
公开(公告)号：JP2002313863A
公开(公告)日：2002-10-25
申请号：JP2002076664
申请日：2002-03-19
申请人： SAMSUNG ELECTRONICS CO LTD
发明人： U ZAIEI , KIM KYUNG DAE , KIM JIN-SUNG , LEE YOUNG GOO
IPC分类号： G02B21/00 , G02B21/26 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To provide a microscope apparatus for semiconductor wafer inspection that can precisely inspect edge, rear, and bevel sections. SOLUTION: The microscope apparatus for semiconductor wafer inspection has an optical system 110 for observing a wafer through an objective lens 111 and an eyepiece 113, a display means 120 for expanding the image of the wafer observed through the optical system 110 for displaying, a sample rest 130 for fixing the wafer, a means 210 for moving the sample rest 130 in X-, Y-, and Z-axis directions, a sample rest rotation means 180 for rotating the wafer within the surface, a means 240 for inclining the wafer, and a control section 170 for controlling the actuation of the microscope apparatus. By the microscope apparatus for semiconductor wafer inspection, the entire surface of the wafer including the edge, bevel, and bottom sections can be collectively inspected.

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