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1. 发明专利

JPH06237072A CERAMIC SUBSTRATE FOR ELECTRONIC PART 失效
公开(公告)号：JPH06237072A
公开(公告)日：1994-08-23
申请号：JP4460293
申请日：1993-02-09
申请人： SUMITOMO ELECTRIC INDUSTRIES
发明人： NATSUHARA MASUHIRO , UKEKAWA JIHEI , NAKADA HIROHIKO , SHIMODA KOHEI , SASAME AKIRA
IPC分类号： H05K1/03 , H05K3/34
摘要： PURPOSE:To provide an AlN ceramic substrate for electronic parts, which can be easily metallized or gold plated by electrodeposition in two or more sections on it without using a special plating jig, wherein the metallized sections can be connected with electronic parts using different brazing materials while the brazing materials are not mixed. CONSTITUTION:On the surface of a metallized layer 2 provided on a sintered substrate 1 mainly composed of AlN, an insulation dam 3 is provided so as to partition the surface into two or more regions 21 and 22 which are discontinuous each other. A ceramic substrate for electronic parts is provided, in which the metallized layer is made of 60 to 99wt.% W and 1 to 40wt.% oxide chosen from a group of Al2O3, SiO2, CaO and Y2O3, and the insulation dam 3 is made of 50 to 99.9wt.% AlN and 0.1 to 50wt.% oxide chosen from a group of Al2O3, SiO2, CaO and Y2O3.

2. 发明专利

JPH0521627A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH0521627A
公开(公告)日：1993-01-29
申请号：JP17523891
申请日：1991-07-16
申请人： SUMITOMO ELECTRIC INDUSTRIES
发明人： MAEDA TAKAO , SHIMODA KOHEI , SHIRAISHI JUNICHI , HIROSE YOSHIYUKI
IPC分类号： H01L23/08
摘要： PURPOSE:To restrain the environmental deterioration in the insulation resistance when aluminum nitride (AlN) is used for a package for insulating the wiring between outer leads with the AlN. CONSTITUTION:An alumina thin film 5 is provided on the AlN surface of a package 1 facing outside and located between outer leads 2. At this time, the environmental deterioration hardly occurs due to the high insulation resistance of alumina. This alumina thin film 5 covers the AlN surface to avoid the reaction between the atmospheric water content and the AlN surface for precluding the possibility of making a path in lower volume resistivity on the surface so that stable insulation may be assured between outer leads 2 to avoid the miss-switching by any leakage current between the leads 2.

3. 发明专利

JPH04139067A PRODUCTION OF ALUMINUM NITRIDE SINTERED BODY 失效
公开(公告)号：JPH04139067A
公开(公告)日：1992-05-13
申请号：JP25953590
申请日：1990-09-27
申请人： SUMITOMO ELECTRIC INDUSTRIES
发明人： SHIMODA KOHEI , MAEDA TAKAO , SOGABE KOICHI , MIYAKE MASAYA , YAMAKAWA AKIRA
IPC分类号： C04B35/581 , C04B35/58
摘要： PURPOSE:To obtain an AlN sintered body enhanced in chemical stability while maintaining high thermal conductivity by adding B2O3 and the oxides of groups IIa and IIIa elements to AlN powder and burning the mixture in the nonoxidative atmosphere. CONSTITUTION:(A) B2O3 or boron compd. (e.g. H3BO3) generating B2O3 at a time of burning is added at 0.01-5wt.% expressed in terms of B2O3 to AlN powder (preferably having =100ppm Ca and 0.1wt.% total amount of impurities of transition metal). (B) The compds. of groups IIa and IIIa elements (the compds. of Ca, Sr, Ba, Sc, Y, La and Ce are especially preferable) are added at 0.1-10wt.% expressed in terms of oxide to the said AlN powder. These are uniformly mixed and then the mixture is burned at 1600-2100 deg.C in a nonoxidative atmosphere contg. CO to obtain the objective AlN sintered body.

4. 发明专利

JP2001032170A METAL NONWOVEN FABRIC AND ITS PRODUCTION 失效
公开(公告)号：JP2001032170A
公开(公告)日：2001-02-06
申请号：JP2000100397
申请日：2000-04-03
申请人： SUMITOMO ELECTRIC INDUSTRIES
发明人： SHIMODA KOHEI , MIZUNO OSAMU , TSUBOUCHI TOSHIYASU
IPC分类号： B01D39/20 , D01F9/08 , D04H1/4234 , D06M11/00 , D06M11/83 , H01M4/80 , D04H1/42
摘要： PROBLEM TO BE SOLVED: To provide a metal nonwoven fabric without reducing apparent rust, brazing properties or bending workability in the metal nonwoven fabric comprising iron and extra fine metal fiber having >=30 μm fiber diameter. SOLUTION: This metal nonwoven fabric is produced by making an iron oxide layer on the surface of a metal nonwoven fabric comprising iron and bringing the oxygen content of the metal fiber to 0.02-0.8 wt.%. Its production is to electroplate iron on the fiber surface of a carbon nonwoven fabric and subsequently carry out a heat treatment to remove the carbon nonwoven fabric and bake the iron in an oven containing a reducing gas at 930-1,350 deg.C with keeping the moisture dew point to -40 to 50 deg.C.

5. 发明专利

JPH10220218A INTERNAL COMBUSTION ENGINE EXHAUST EMISSION CLEANING DEVICE 失效
公开(公告)号：JPH10220218A
公开(公告)日：1998-08-18
申请号：JP2140997
申请日：1997-02-04
申请人： TOYOTA MOTOR CORP , SUMITOMO ELECTRIC INDUSTRIES
发明人： WATANABE YOSHIMASA , ARAKI YASUSHI , HENDA YOSHIMITSU , OKAMOTO AKIRA , SHIMODA KOHEI , NAGAI YOICHI
IPC分类号： F01N3/02 , F01N3/021
摘要： PROBLEM TO BE SOLVED: To satisfactorily scale off and emit ash from a filter even with slight exciting force. SOLUTION: This internal combustion engine exhaust cleaning device is provided with guide mechanisms 4, 6, which are arranged on an engine exhaust passage with the exhaust gas upstream side end of a particulate catching filter 1 facing downward and supporting the filter 1 inside the exhaust passage in the movable manner in its axial direction, an abutment part 4b provided on the filter 1, and a stopper member 6c, which faces the abutment part 4b with a gap in between and regulates the movable quantity of the filter 1 in its axial direction by abutting on the abutment part 4b when the filter 1 moves in its axial direction.

6. 发明专利

JPH1047035A PARTICULATE TRAP FOR DIESEL ENGINE 失效
公开(公告)号：JPH1047035A
公开(公告)日：1998-02-17
申请号：JP20951596
申请日：1996-08-08
申请人： SUMITOMO ELECTRIC INDUSTRIES
发明人： SHIMODA KOHEI , NAKAYAMA AKIRA , IHARA HIROHIKO , OKAMOTO AKIRA
IPC分类号： F01N3/02 , B01D53/86 , B01D53/94 , B01J23/40 , B01J23/63
摘要： PROBLEM TO BE SOLVED: To provide a filter to simultaneously remove particulate, such as liquid or gasified hydrocarbon, in addition to carbon particles contained in diesel exhaust gas. SOLUTION: A particulate trap for a diesel engine consists of a skeleton formed of a heat resistant metal tertiary foam structure porous substance having communication holes; one kind or more of oxides selected from a group consisting of titanium oxide, zirconium, and a rare earth oxide laminated on a surface; and a platinum metal further laminated thereon. An average diameter of the communication hole of the element is 10-100μm or less. Further, the oxide contains one kind or more of a group consisting of an iron oxide, a chrome oxide, and a nickel oxide.

7. 发明专利

JPH0840773A ALUMINUM NITRIDE CERAMIC AND ITS PRODUCTION 失效
公开(公告)号：JPH0840773A
公开(公告)日：1996-02-13
申请号：JP18214594
申请日：1994-08-03
申请人： SUMITOMO ELECTRIC INDUSTRIES
发明人： SHIMODA KOHEI , KAMITAKE KAZUYA , NAKADA HIROHIKO
IPC分类号： C04B35/581
摘要： PURPOSE:To provide an aluminum nitride ceramic high in thermal conductivity and having a high strength. CONSTITUTION:100 pts.wt. of aluminum nitride powder having an oxygen content of =180(W/m.k) at 25 deg.C.

8. 发明专利

JPH0750369A CERAMIC HEAT RADIATOR FOR SEMICONDUCTOR AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH0750369A
公开(公告)日：1995-02-21
申请号：JP21231693
申请日：1993-08-04
申请人： SUMITOMO ELECTRIC INDUSTRIES
发明人： UKEKAWA JIHEI , NATSUHARA MASUHIRO , SHIMODA KOHEI , NAKADA HIROHIKO
IPC分类号： H01L23/373
摘要： PURPOSE:To obtain a highly efficient ceramic heat radiator for semiconductor at low cost using neither a cutting process nor an abrasion process, etc., by a method wherein a base part and a fin part are formed using separate members, and they are bonded by a bonding means. CONSTITUTION:The surface of the base part 1 of an AlN sintered body is coated in parallel lines with the paste 2 containing AlN and CaO of 9:1 in weight ratio and also containing a vehicle and organic solvent. Then, using a jig 10 having parallel grooves, an AlN sintered plate 3, which becomes a fin part, is arranged on the coating of paste 2 on the base part 1, and they are fired at 1600 deg.C in a non-oxydizing atmosphere. As a result, an AlN heat radiator, which is formed by junctioning the base part and the fin part, can be manufactured at low cost, the radiator has a high production efficiency, and as it has low probability in generation of defective products such as cracks, chippings and the like, high yield of production and high reliability can be accomplished.

9. 发明专利

JPH06203636A INSULATING PASTE AND FORMING METHOD OF INSULATING LAYER USING INSULATING PASTE 失效
公开(公告)号：JPH06203636A
公开(公告)日：1994-07-22
申请号：JP35945492
申请日：1992-12-25
申请人： SUMITOMO ELECTRIC INDUSTRIES
发明人： NATSUHARA MASUHIRO , YORO KATSUHIKO , SHIMODA KOHEI , UKEKAWA JIHEI , NAKADA HIROHIKO
IPC分类号： H01B3/12 , H05K3/28 , H05K3/46
摘要： PURPOSE:To simultaneously bake an AIN substrate and a W or Mo metallized layer and to form an insulating layer which excels in adhesion on the AIN substrate and the W or Mo metallized layer. CONSTITUTION:An inorganic component includes an AlN powder and at least one kind of oxide powder of 1 to 100 parts by weight as against the AlN power of 100 parts by weight, which is selected from a group comprising elements of group 2A, and 3A in a periodic table, aluminium and silicon oxide. The AIN substrate 1 and the W metallized layer 3 or the Mo metallized layer are simultaneously baked, thereby forming an insulating layer 2 which excels in adhesion thereto.

10. 发明专利

JPH05102341A BOARD FOR SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH05102341A
公开(公告)日：1993-04-23
申请号：JP25927891
申请日：1991-10-07
申请人： SUMITOMO ELECTRIC INDUSTRIES
发明人： MAEDA TAKAO , SHIMODA KOHEI
IPC分类号： H01L23/12
摘要： PURPOSE:To provide a board for a semiconductor device where the density in mounting is elevated sharply to realize the further miniaturization of the semiconductor device, the reduction of the installation area of a printed board, etc. CONSTITUTION:Loading parts 9 for semiconductor elements 1 and relay wiring parts 4 are provided on both sides of the body 2 which is made by stacking insulators. And, i/o parts of the upper and lower semiconductor elements 1 are connected via the inner wiring 6 inside the body connected by viafil conductors 7, and the i/o part of the external lead out of the main element is connected to the i/o pin 3 via the inner wiring 6 similarly. Therefore, it becomes possible to load a plurality of elements with the area for one piece, and the mounting density nearly doubles as compared with a conventional board of single-face mounting. Moreover, the number of i/o pins gets off nearly the same as the time of single loading or fewer than that, and the speed up by the shortening of the wiring between elements can be materialized.

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