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1. 发明专利

JPH0397693A CASIFYING AND SUPPLYING DEVICE FOR ORGANIC METALLIC COMPOUND 失效
公开(公告)号：JPH0397693A
公开(公告)日：1991-04-23
申请号：JP23476789
申请日：1989-09-12
申请人： STEC KK , SHINETSU CHEMICAL CO
发明人： MIHIRA HIROSHI , SHIMIZU TETSUO , HIRAHARA KAZUHIRO , ISHIHARA TOSHINOBU , TAKAYA MASATERU
IPC分类号： C30B25/14 , B01J7/02 , H01L21/205
摘要： PURPOSE:To lower dispersion of composition by arranging the route of a gaseous raw material which is connected to a crystal growing furnace from a vessel with organic metallic compd. filled thereinto and the route of carrier gas into a thermostatic chamber. CONSTITUTION:A base plate 13 is fitted to a crystal growing furnace 11 and heated and also the inside of a system is evacuated. valves 61, 62 for carrier gas are opened and the carrier gas is quantified by the mass flow controllers 81, 82 and introduced into the furnace 11. Then a thermostatic chamber 20 is raised at the prescribed temp. to gasify organic metallic compd. 1 and the vapor pressure thereof is raised. A main valve 3 and the valves 51, 52 for supplying a gaseous raw material are opened. The gasified organic metallic compd. 1 is regulated to the prescribed amount by the mass flow controlled 41, 42. Thereafter this is mixed with the carrier gas in the block valves 71, 72 and this mixture is supplied to the furnace 11. The epitaxial thin film of a compd. semiconductor is formed on the base plate 13 in the furnace 11.

2. 发明专利

JPH0397692A GASIFYING AND SUPPLYING DEVICE FOR ORGANIC METALLIC COMPOUND 失效
公开(公告)号：JPH0397692A
公开(公告)日：1991-04-23
申请号：JP23476689
申请日：1989-09-12
申请人： STEC KK , SHINETSU CHEMICAL CO
发明人： MIHIRA HIROSHI , SHIMIZU TETSUO , HIRAHARA KAZUHIRO , ISHIHARA TOSHINOBU , TAKAYA MASATERU
IPC分类号： C30B25/14 , B01J7/02 , H01L21/205
摘要： PURPOSE:To lower dispersion of composition by arranging the route of a gaseous raw material which reaches a crystal growing furnace from a vessel with organic metallic compd. filled thereinto, a mass flow controller for carrier gas and a heat exchanger into a thermostatic chamber. CONSTITUTION:A base plate 13 is fitted to a crystal growing furnace 11 and heated at the prescribed temp. and also the inside of a system is evacuated. Then an air thermostatic chamber 24 is raised at fixed temp. to gasify organic metallic compd. 26. The gasified organic metallic compd. is allowed to flow to a mass flow controller 22 by opening a main valve 21 and supplied to the furnace 11 via a raw material supplying valve 23 and a connecting part 32 after regulating the flow rate. On the other hand, carrier gas such as gaseous H2 is regulated to constant flow rate via a valve 30 and a mass flow controller 28 and heated by a heat exchanger 29. The carrier gas of several hundreds times of the gaseous raw material is continuously supplied from the connecting part. The organic metallic compd. 26 is always supplied at uniform concn. into the furnace 11. The epitaxial thin film of a compd. semiconductor is formed on the base plate 13 in the furnace 11.

3. 发明专利

JPH02255595A METHOD AND DEVICE FOR VAPORIZING AND SUPPLYING ORGANOMETALLIC COMPOUND 失效
公开(公告)号：JPH02255595A
公开(公告)日：1990-10-16
申请号：JP7702089
申请日：1989-03-29
申请人： STEC KK , SHINETSU CHEMICAL CO
发明人： MIHIRA HIROSHI , SHIMIZU TETSUO , HIRAHARA KAZUHIRO , ISHIHARA TOSHINOBU , TAKAYA MASATERU
IPC分类号： C23C16/448 , C30B25/02 , C30B25/14 , H01L21/205
摘要： PURPOSE:To uniformly supply a vaporized organometallic compd. even on a large-area substrate with good reproducibility and working safety by heating the compd. to a fixed temp. and supplying a fixed value of the vaporized compd. having a fixed vapor pressure onto the substrate surface placed in the heated and reduced-pressure atmosphere. CONSTITUTION:A cylinder vessel 20 is heated to a fixed temp. by an air thermostatic bath 24, and an air thermostatic bath 25 is kept at a slightly higher temp. A substrate 13 is placed in a crystal growth furnace 11 and heated to a specified temp. by a heater 12, and the furnace is evacuated by a vacuum pump 14. As the vessel 20 is heated, the organometallic compd. 2 which is solid at ordinary temp. begins to vaporize, and a pneumatic inlet and outlet valve 21 and a supply stopping valve 23 are opened. The vaporized compd. 26 is introduced into a mass-flow controller 22, the mass flow rate is directly measured and adjusted to a fixed value, the vaporized compd. is supplied to the furnace 11, and the epitaxial thin film of a compd. semiconductor is formed on the substrate 13. By this method, the amt. of the vaporized compd. 26 is controlled to a fixed value at all times, the compd. 26 need not be powdered, and hence the contamination by the powdery compd. 26 in the packing operation is prevented.

4. 发明专利

JP2000344836A POLYMER COMPOUND AND ITS PRODUCTION 失效
公开(公告)号：JP2000344836A
公开(公告)日：2000-12-12
申请号：JP2000060992
申请日：2000-03-06
申请人： SHINETSU CHEMICAL CO
发明人： WATANABE OSAMU , TAKEDA TAKANOBU , HATAKEYAMA JUN , KOBAYASHI TOMOHIRO , ISHIHARA TOSHINOBU , WATANABE ATSUSHI
IPC分类号： G03F7/032 , C08F212/14
摘要： PROBLEM TO BE SOLVED: To obtain polymer compound used as a base resin of a resist material to form a very fine pattern for the production of VLSIs, which compound is a phenol derivative dendrimer or hyperbranched polymer having a specified weight-average molecular weight. SOLUTION: Provided is a high-molecular compound having a weight-average molecular weight of 500-10,000,000. It is desirably one which comprises repeating units of formulae I and/or II and repeating units of formula III and in which the number of repeating units of formula III is 1-1,000. In the formulae, R1 is H or methyl; R2 is a 1-30C linear, branched, or cyclic alkyl, or a 6-30C aryl; R3 is OH or OR4 (wherein R4 is a not acid-stable group or an acid-stable group); x is 0 or a positive integer; y is a positive integer; x+y

5. 发明专利

JPH10204125A PRODUCTION OF POLYMER COMPOUND WITH CROSSLINKING GROUP 失效
公开(公告)号：JPH10204125A
公开(公告)日：1998-08-04
申请号：JP11039697
申请日：1997-04-11
申请人： SHINETSU CHEMICAL CO
发明人： WATANABE SATOSHI , WATANABE OSAMU , FURUHATA TOMOYOSHI , TAKEDA YOSHIFUMI , NAGURA SHIGEHIRO , ISHIHARA TOSHINOBU , YAMAOKA TSUGIO
IPC分类号： G03F7/039 , C08F8/00 , C08F112/14 , G03F7/004
摘要： PROBLEM TO BE SOLVED: To obtain a polymer compd. which gives a chemically amplified positive resist having high sensitivity, resolution, exposure allowance, and process adaptability by reacting a specific alkali-soluble polymer compd. with a specific alkenyl ether compd. SOLUTION: A polymer compd. having a wt. average mol.wt. of 1,000-500,000 and repeating units represented by formula I (R is H or methyl; R is 1-8C alkyl; x is 0 or a positive integer; y is a positive integer provided x+y and R are each H or alkyl; R is alkylene; A is a c-valent hydrocarbon group; c is 2-8; and d is 0 or 1-10) and a compd. represented by formula III (R and R are each H or alkyl; and R is a hydrocarbon group) to give a polymer compd. having repeating units represented by formula IV (each symbol is the same as in formulas I to III; and Q is a group represented by formula V).

6. 发明专利

JPH1017572A PURIFICATION OF ORGANOMETAL COMPOUND 失效
公开(公告)号：JPH1017572A
公开(公告)日：1998-01-20
申请号：JP18410596
申请日：1996-06-25
申请人： SHINETSU CHEMICAL CO
发明人： OSAKI HIROMI , HIRAHARA KAZUHIRO , ISHIHARA TOSHINOBU , KANEKO ISAO
IPC分类号： B01D8/00 , B01D5/00 , B01D7/00 , C07F3/00 , C07F5/00 , C23C16/44
摘要： PROBLEM TO BE SOLVED: To industrially efficiently purify an organometal compound containing impurities into the highly pure product useful as a material for compound semiconductors by using a specific device. SOLUTION: This method for purifying an organic metal compound comprises evaporating the organometal compound of the formula or the formula: R-M -R (R is a 1-3C alkyl; M is a trivalent metal atom; M is a divalent metal atom) (preferably trimethylindium), passing the vapor through a heat exchange device 8 having a double pipe structure comprising an inner pipe 8a and an outer pipe 8b wherein the outer pipe 8b is cooled at a lower temperature than the melting point of the compound, once depositing the compound on the inner surface of the inner pipe 8a of the heat exchange device 8, heating the outer pipe 8b of the heat exchange device 8 to again evaporate the compound deposited on the inner surface of the inner pipe 8a of the heat exchange device 8, and depositing and filling the reevaporated compound in a filling vessel 5 connected to the heat exchange device 8 and cooled to a described temperature. The cooling temperature is preferably -70 to 10 deg.C, and the heating temperature is preferably 20-100 deg.C.

7. 发明专利

JPH0950129A ANTIREFLECTION FILM MATERIAL AND PATTERN FORMING METHOD 失效
公开(公告)号：JPH0950129A
公开(公告)日：1997-02-18
申请号：JP29048095
申请日：1995-10-12
申请人： SHINETSU CHEMICAL CO
发明人： TSUCHIYA JUNJI , WATANABE SATOSHI , TAKEMURA KATSUYA , NAGURA SHIGEHIRO , ISHIHARA TOSHINOBU
IPC分类号： G03F7/004 , G03F7/11 , G03F7/30 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To obtain an antireflection film material excellent in film forming property and capable of forming a resist pattern with high reproducibility by using a specified water-soluble fluororesin in combination with an amine salt of an F-contg. org. acid. SOLUTION: This antireflection film material consists essentially of a water- soluble fluororesin represented by the formula and an amine salt of an F-contg. org. acid. In the formula, R is H or methyl, R is-(CH2 )a(CF2 )b X, etc., R is carboxyl, etc., R is-CH2 COOH, etc., R is-C(= O)YR COOH, etc., R is- COONR R R R , etc., R is-CH2 COONR R R R , etc., R is -C(= O)YR SO3 NR R R R , etc., R is an alkylene, each of R -R is an alkyl, etc., X is H or F and Y is -O- or -NH-.

8. 发明专利

JPH0934115A WATER-SOLUBLE PATTERN FORMING MATERIAL 失效
公开(公告)号：JPH0934115A
公开(公告)日：1997-02-07
申请号：JP20791095
申请日：1995-07-21
申请人： SHINETSU CHEMICAL CO
发明人： HATAKEYAMA JUN , WATANABE SATOSHI , ISHIHARA TOSHINOBU , OKAZAKI SATOSHI , UMEMURA MITSUO
IPC分类号： G03F7/004 , C08K5/05 , C08L101/14 , G03F7/095
摘要： PROBLEM TO BE SOLVED: To suppress the occurrence of striation and unevenness in coating after spin coating and to prevent the occurrence of pattern defects by adding an aliphatic monohydric alcohol having a specified number of C atoms. SOLUTION: A l-7C aliphatic monohydric alcohol is added by 0.00001-30 pts.wt., especially 0.01-10 pts.wt. based on 100 pts.wt. water. The aliphatic alcohol is, e.g. ethanol, propanol, butanol, heptanol, allyl alcohol, crotyl alcohol or cyclohexyl alcohol but propanol or butanol is preferably used. In order to improve film forming property, various water-soluble high molecular compds. as wel as an acetylene alcohol compd. are preferably added. The high molecular compds. include PVA and its ether deriv.

9. 发明专利

JPH0912537A SULFONIUM SALT 失效
公开(公告)号：JPH0912537A
公开(公告)日：1997-01-14
申请号：JP18616895
申请日：1995-06-29
申请人： SHINETSU CHEMICAL CO
发明人： OSAWA YOICHI , TAKEMURA KATSUYA , WATANABE SATOSHI , ISHIHARA TOSHINOBU , NAGURA SHIGEHIRO
IPC分类号： G03F7/004 , C07C381/12 , G03F7/039 , H01L21/027
摘要： PURPOSE: To obtain a new sulfonium salt having an acid unstable group at the 3-site of the phenyl group of the sulfonium salt and useful as a component of a chemical amplification positive resist material suitable for fine processing technology. CONSTITUTION: This sulfonium salt is expressed by formula I (R is H, an alkyl, etc.; OR is an acid unstable group; Y is an alkylsulfonate, etc.; n is 0, 1 or 2; m is 1, 2 or 3; n+m:3), e.g. trifluoromethanesulfonic acid tris(3-t- butoxyphenyl)sulfonium salt. The exemplified substance of the compound of formula I having t-butyl group at the 3-site of the phenyl group and expressed by formula V can be produced by reacting a sulfoxide compound of formula II with a trialkylsilyl sulfonate compound of formula III (R is methyl or t-butyl) and further reacting with a Grignard reagent of formula IV (X is Br, etc.).

10. 发明专利

JPH08254834A PHOTORESIST OVERCOATING MATERIAL AND RESIST PATTERN FORMING METHOD 失效
公开(公告)号：JPH08254834A
公开(公告)日：1996-10-01
申请号：JP8340095
申请日：1995-03-15
申请人： SHINETSU CHEMICAL CO
发明人： TSUCHIYA JUNJI , OBA KAZUHIRO , TAKEMURA KATSUYA , ISHIHARA TOSHINOBU
IPC分类号： G03F7/039 , G03F7/11 , G03F7/38 , H01L21/027
摘要： PURPOSE: To prevent the deformation of a resist pattern due to the deactivation of an acid on the surface of a photoresist layer and to enable fine working by using a photoresist overcoating material based on a specified copolymer. CONSTITUTION: A photoresist overcoating material based on a copolymer represented by the formula is dissolved in a hydrocarbon type org. solvent to prepare a soln. The surface of a photoresist layer which is insoluble in the org. solvent, becomes soluble in an aq. alkali soln. after exposure and can be developed with the alkali soln. is coated with the prepd. soln. to form an overcoating layer on the photoresist layer and the photoresist layer is exposed. The overcoating layer is then removed with an aq. alkali soln. and simultaneously the photoresist layer is developed. In the formula, each of R and R is H, methyl, etc., R is -COOH, -SO2 H, etc., R is H, methyl, etc., R is -COOR , -OR , etc., R is 1-20C straight chain, branched or cyclic alkyl and the ratio of x:y is 5:95 to 90:10.

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