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1. 发明专利

JPH05340513A 失效
公开(公告)号：JPH05340513A
公开(公告)日：1993-12-21
申请号：JP19126892
申请日：1992-06-09
申请人： SHIKOKU SOGO KENKYUSHO KK , SHIKOKU ELEC POWER , NIPPON I T F KK , SUMITOMO ELECTRIC INDUSTRIES
发明人： TSUDA KENZO , SHIBAYAMA MUNEAKI , SAITO YASUHIRO , YUSHIO YASUHISA
IPC分类号： C23C14/06 , F23D11/38
摘要： PURPOSE:To extend the service life of a nozzle even though it can be industrially mass-produced, by a method wherein the components of the nozzle are made of tool steel and a ceramic coat is formed on the surface of the nozzle. CONSTITUTION:A base material 11 of a spray plate 5 having a spray hole 5a is formed of tool steel having a Vickers hardness of 800-900 into a required shape, and a coat 8 composed of ceramic is formed on its surface. To form the coat 8, a metal such as titanium is vaporized in argon gas in a treatment furnace and energized to let it discharge, so that the argon gas collides with the metal and the metal is positively ionized. Then, when a negative high-voltage is applied to the base material 11 and ethylene gas or nitrogen gas is added into the argon gas, the metal is accelerated and attracted to the base material 11 and a coat of titanium carbide or titanium nitride is formed on the base material 11.

2. 发明专利

JPH0649659A COATING MATERIAL RESISTANT TO ENVIRONMENT AND WEAR 失效
公开(公告)号：JPH0649659A
公开(公告)日：1994-02-22
申请号：JP22804992
申请日：1992-08-04
申请人： SHIKOKU ELEC POWER , SHIKOKU SOGO KENKYUSHO KK , NIPPON I T F KK , SUMITOMO ELECTRIC INDUSTRIES
发明人： SHIBAYAMA MUNEAKI , TSUDA KENZO , SAITO YASUHIRO , YUSHIO YASUHISA
IPC分类号： C23C14/06 , C23C14/32 , C23C28/04
摘要： PURPOSE:To provide an extremely stable coating material which is not eroded in a chemically active environment of high-temp. and high-pressure fuel, combus tion gas, etc., which is hardly worn even by the fuel, etc., contg. high-hardness impurity particles and especially suitable as the material for the tip of a petro leum atomizing burner of a petroleum-fired boiler. CONSTITUTION:This coating material resistant to environment and wear is formed with a heat-resistant metallic base material, an intermediate layer consisting of one or >=2 layers of the carbide, nitide or carbonitride of titanium and provided on the base material surface and a surface layer of chromium nitride furnished on the intermediate layer surface, and the material is excellent in chemical stability and wear resistance in a chemically active environment including high-temp. and high-pressure fuel, combustion gas, etc.

3. 发明专利

JP2000053470A ALUMINUM NITRIDE SINTERED BODY, ITS PRODUCTION AND SEMICONDUCTOR SUBSTRATE 失效
公开(公告)号：JP2000053470A
公开(公告)日：2000-02-22
申请号：JP11035199
申请日：1999-04-19
申请人： SUMITOMO ELECTRIC INDUSTRIES
发明人： NATSUHARA MASUHIRO , NAKADA HIROHIKO , YUSHIO YASUHISA , TANAKA MOTOYUKI , NAGAO SHUNJI , SHINODA AKIRA , SASAKI KAZUTAKA
IPC分类号： H05K1/03 , C04B35/626 , H01L23/12 , H01L23/15
摘要： PROBLEM TO BE SOLVED: To produce an aluminum nitride sintered body having high strength as well as high heat conductivity and to obtain a semiconductor substrate using the sintered body. SOLUTION: A powdery starting material consisting of 1-95 wt.% AlN powder having

4. 发明专利

JPH11212385A HEAT-FIXING DEVICE 失效
公开(公告)号：JPH11212385A
公开(公告)日：1999-08-06
申请号：JP1358898
申请日：1998-01-27
申请人： SUMITOMO ELECTRIC INDUSTRIES
发明人： TANAKA MOTOYUKI , NAKADA HIROHIKO , NATSUHARA MASUHIRO , YUSHIO YASUHISA
IPC分类号： G03G15/20 , H05B3/12 , H05B3/16 , H05B3/20
摘要： PROBLEM TO BE SOLVED: To obtain a device stably fixing a toner image on recording paper in a state where the large-size paper and the small-size paper coexist even at fixing speed near to 12 ppm while preventing a paper non-passing part from being excessively heated without making a ceramic base plate larger by setting the length of a pressure roller longer than that of the heating element of a ceramic heater by a specified range. SOLUTION: As for the ceramic heater; material excellent in heat conductivity is selected as its material so that the heat-fixing device may be ready to work as soon as the power source of a copying machine is turned on. Then, it is more desirable to set two heating elements 11 than one so as to maintain all the area of the nip part of the pressure roller 1 at equal temperature, and the ceramic heater is formed by considering the heat balance of all the area of a base plate 10 made of aluminum nitride. In this device, the length of the roller 1 is set to be longer than the entire length of the heating element 11 of the ceramic heater by 10 to 50 mm. Thus, the radiant heat of the paper non-passing part Y in the case of carrying the small-width transfer material is radiated and the paper non-passing part Y is prevented from being excessively heated, and the wrinkling of paper and high-temperature offset are restrained.

5. 发明专利

JPH03197676A LAMINATED OPTICAL WINDOW MATERIAL HAVING SUPERIOR ENVIRONMENTAL RESISTANCE AND INFRARED RAY TRANSMITTANCE 失效
公开(公告)号：JPH03197676A
公开(公告)日：1991-08-29
申请号：JP33756889
申请日：1989-12-25
申请人： SUMITOMO ELECTRIC INDUSTRIES
发明人： YUSHIO YASUHISA , KAWAI HIROSHI , DOI AKIRA , OSAKA HAJIME , YOSHIOKA TAKESHI
IPC分类号： G02B1/02 , C23C14/06 , C23C16/22 , C23C16/26 , C23C16/27 , G02B1/10 , G02B1/14
摘要： PURPOSE:To produce a laminated optical window material having superior environmental resistance and IR transmittance by successively laminating an MgF2 film, an Si film, a silicon carbide-based film and a diamondlike carbon film each in a prescribed thickness on the surface of a transparent zinc sulfide substrate. CONSTITUTION:An MgF2 film of 0.01-10mum thickness as a first layer, an Si film of 0.01-5.0mum thickness as a second layer, a silicon carbide (amorphous silicon carbide)-based film of 100Angstrom -5mum thickness as a third layer and a diamondlike carbon film of 200Angstrom -200mum thickness as a top layer are successively formed on at least one side of a transparent zinc sulfide (polycrystalline zinc sulfide) substrate to obtain a high hardness-laminated optical window material having superior environmental resistance and IR transmittance. This window material is suitable for use as the window material of an airplane, etc.

6. 发明专利

JP2000058631A HOLDER FOR MANUFACTURING SEMICONDUCTOR AND MANUFACTURE THEREOF 失效
公开(公告)号：JP2000058631A
公开(公告)日：2000-02-25
申请号：JP4454499
申请日：1999-02-23
申请人： SUMITOMO ELECTRIC INDUSTRIES
发明人： YUSHIO YASUHISA , NAKADA HIROHIKO , NATSUHARA MASUHIRO
IPC分类号： H01L21/683 , C04B35/581 , C04B37/02 , C23C16/458 , C30B25/12 , C30B31/14 , H02N13/00 , H01L21/68
摘要： PROBLEM TO BE SOLVED: To obtain an electrostatic chuck capable of being manufactured stably while ensuring shape accuracy and practical performance by laminating a plurality of aluminum-nitride ceramic base materials using adhesive layers consisting of a high melting-point metallic layer and oxide glass as interposing layers. SOLUTION: The holder for manufacturing the semiconductor, in which a plurality of aluminum-nitride ceramic base materials 11 are laminated by high melting-point metallic layers 12 for generating static electricity and adhesive layers 13 formed for bonding the metallic layers 12 as electrodes and the base materials, is used as an electrostatic chuck. Since the ceramic base materials 11 containing not less than 99 wt. % AlN are employed, the damage and consumption of the surfaces of the base materials 11 in a plasma atmosphere comprising fluorine can be reduced. The component of the grain-boundary phase of the base material 11 contains a not more than 1 wt. % group 3a element, and the mean grain size of the grain size of an AlN crystal is kept within the range of 2-5 μm. Accordingly, the electrostatic chuck having excellent plasma corrosion resistance is obtained with high dimensional accuracy.

7. 发明专利

JPH03177566A HIGH-FREQUENCY ION PLATING DEVICE 失效
公开(公告)号：JPH03177566A
公开(公告)日：1991-08-01
申请号：JP31575489
申请日：1989-12-05
申请人： SUMITOMO ELECTRIC INDUSTRIES
发明人： YUSHIO YASUHISA
IPC分类号： C23C14/32 , H01J37/317 , H01L21/203
摘要： PURPOSE:To form an extremely high purity thin film by forming the inner wall of a vacuum chamber and at least a part of the members in the chamber with a ceramic or covering those with the ceramic in the high-frequency ion plating device CONSTITUTION:A substrate 2, a substrate fixture 3 for holding the substrate, a crucible 4 contg. a vaporization source and a high-frequency wave impressing coil 5 are arranged in the vacuum chamber 1, a gaseous reactant is supplied from a gas inlet pipe 6, the reactant is excited by the high-frequency wave impressed on the coil to ionize the vapor-deposition material with the generated high-frequency plasma, and the ionized material is deposited on the substrate 2. In this case, since the mount 3, coil 5 and inner wall of the chamber 1 are sputtered by the high-frequency plasma and the metal in the material is mixed into the thin film formed on the substrate 2 as impurities, the surfaces are covered with a ceramic such as Al2O3 or made of the ceramic. Consequently, the metal is not mixed into the thin film on the substrate 2, and a high purity thin film is formed on the substrate 2.

8. 发明专利

JPH01103853A COMPONENT FOR SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH01103853A
公开(公告)日：1989-04-20
申请号：JP16267288
申请日：1988-07-01
申请人： SUMITOMO ELECTRIC INDUSTRIES
发明人： SASAME AKIRA , SAKAGAMI HITOSHI , TAKEUCHI HISAO , MIYAKE MASAYA , YAMAKAWA AKIRA , YUSHIO YASUHISA
IPC分类号： H01L23/40 , H01L23/12 , H01L23/14
摘要： PURPOSE:To prevent the generation of warpages and cracks at the time of the bonding of an insulating member and a heat dissipation member by a method wherein a soft metal or a soft alloy having a high plastic deformability is interposed between the insulating member and the heat dissipation member as a buffer material. CONSTITUTION:In order to dissolve cracks and warpages due to a thermal stress, which is generated in a cooling process at the time of soldering, it is effective that a specified thermal stress buffer material is interposed between an insulating member consisting of Al nitride and a heat dissipation member being constituted of a copper-tungsten alloy or a copper-molybdenum alloy as its main material. The buffer material consists of one of a soft metal and a soft alloy, which have a high plastic deformability, so that the buffer material itself relaxes a thermal stress, which is generated by a difference between the thermal expansion coefficients of the insulating member and the heat dissipation member in the cooling process at the time of soldering, by deforming plastically. It is desirable that the buffer material consists of one of copper, a copper alloy, nickel and a nickel alloy.

9. 发明专利

JP2012110270A AGROBACTERIUM-MEDIATED TRANSFORMATION METHOD AND METHOD FOR PRODUCING TRANSFORMED PLANT BY USING THE SAME 审中-公开
公开(公告)号：JP2012110270A
公开(公告)日：2012-06-14
申请号：JP2010261982
申请日：2010-11-25
申请人： UNIV OSAKA , SUMITOMO ELECTRIC INDUSTRIES
发明人： SHIBAGAKI NAKAKO , SINGKARABANIT SUTHITAR , IKEGUCHI NAOKI , YUSHIO YASUHISA
IPC分类号： C12N15/09 , A01H1/00
摘要： PROBLEM TO BE SOLVED: To provide an agrobacterium-mediated transformation method having increased sterilizing efficiency and accordingly improved callus induction and shoot regeneration efficiency, and to provide a method for producing a transformed plant by using the transformation method.SOLUTION: The method for transforming a plant by inoculating a plant leaf with an agrobacterium holding an exogenous DNA comprises a sterilization step absorbing a liquid containing an antibiotic substance for agrobacterium sterilization through the leaf stem of the leaf after inoculation of the agrobacterium. Preferably, the leaf blade of the leaf is immersed in an aqueous solution of hypochlorous acid after the sterilization step.

10. 发明专利

JPH11322432A GREEN BODY AND SINTERED BODY OF ALN POWDER, AND THEIR PRODUCTION 失效
公开(公告)号：JPH11322432A
公开(公告)日：1999-11-24
申请号：JP14066898
申请日：1998-05-22
申请人： SUMITOMO ELECTRIC INDUSTRIES
发明人： SASAKI KAZUTAKA , MURASE YASUHIRO , TANAKA MOTOYUKI , NATSUHARA MASUHIRO , YUSHIO YASUHISA , NAKADA HIROHIKO
IPC分类号： C04B35/581 , B28B3/02 , H01L23/15
摘要： PROBLEM TO BE SOLVED: To provide a plate-like AlN sintered body free from warps and deformations and excellent in dimensional precision, and a AlN sintered body provided with a metalized layer on its surface, which is suitable for semiconductor substrates. SOLUTION: The AlN sintered body having a warping value of =0.002 A (mm ) is a cross section of the green compact in the direction of compression; S (kg/mm ) is forming pressure}, using a forming die with a forming surface having a surface roughness, Ra of

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