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1. 发明专利

JP2004095704A Microwave plasma treatment method and apparatus thereof 审中-公开
公开(公告)号：JP2004095704A
公开(公告)日：2004-03-25
申请号：JP2002252411
申请日：2002-08-30
申请人： Shibaura Mechatronics Corp , 芝浦メカトロニクス株式会社
发明人： IINO YOSHINORI
IPC分类号： H05H1/46 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To prevent a substrate treatment speed from fluctuating by the decrease of the temperature of a dielectric plate (e.g., quartz plate), to improve the operation rate of an apparatus and to improve the throughput. SOLUTION: In the microwave plasma treatment method of applying a plasma treatment to a substrate (28) which is held on a vertically movable substrate holding stand (26) with a heater by guiding a plasma gas generated by a microwave supplied to an upper portion within a vacuum container (10) via a dielectric plate (16) to the substrate (28), before the treatment of the substrate (28), the substrate holding stand (26) is made proximate to the dielectric plate (16), and the dielectric plate (16) is heated by the substrate holding stand (26). The substrate holding stand (26) with the heater may be moved up while the substrate (28) is not held but may be also moved up while holding the substrate (28) to heat the dielectric plate (16). COPYRIGHT: (C)2004,JPO

2. 发明专利

JP2005064037A Plasma treatment apparatus and ashing method 审中-公开
标题翻译：等离子体处理装置和方法
公开(公告)号：JP2005064037A
公开(公告)日：2005-03-10
申请号：JP2003207379
申请日：2003-08-12
申请人： Shibaura Mechatronics Corp , 芝浦メカトロニクス株式会社
发明人： IINO YOSHINORI
IPC分类号： H01L21/3065 , G03F7/42 , H01J37/32 , H01L21/311
CPC分类号： H01L21/31138 , G03F7/427 , H01J37/32192 , H01J37/32357 , H01J2237/3342
摘要： PROBLEM TO BE SOLVED: To provide a plasma treatment apparatus wherein plasma treatment like ashing is enabled based on a way of thinking different from a conventional one without causing unnecessary damage, even when plasma treatment to a low dielectric constant material etc. is performed, and to provide an ashing method.
SOLUTION: The plasma treatment apparatus is provided with a chamber which can maintain an atmosphere reduced in pressure lower than that of the air, a guide tube connected to the chamber, a gas introducing mechanism which introduces gas into the guide tube, and a microwave supply source which introduces a microwave from the exterior of the guide tube to the inside. In the plasma treatment apparatus, the plasma of the gas is formed in the guide tube, and plasma treatment to a workpiece installed in the chamber is enabled. The guide tube is connected so that an aperture is formed on the inner wall of the chamber of which the inner wall is almost perpendicular to the main surface of the workpiece. The workpiece is not arranged on a straight sight line viewed from the plasma.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：为了提供一种等离子体处理装置，其中基于与传统方式不同的思维方式，可以进行等离子体处理，而不会造成不必要的损坏，即使对低介电常数材料等进行等离子体处理也是执行，并提供灰化方法。解决方案：等离子体处理装置设置有可以使压力降低的空气比空气降低的气氛，与室连接的导向管，将气体引入导管的气体导入机构，以及将微波从导管的外部引入内部的微波源。在等离子体处理装置中，在引导管中形成气体的等离子体，能够对安装在室内的工件进行等离子体处理。引导管被连接，使得在其内壁几乎垂直于工件的主表面的室的内壁上形成孔。工件未设置在从等离子体观察的直线视线上。版权所有（C）2005，JPO＆NCIPI

3. 发明专利

JP2019095467A フォトマスクの製造方法审中-公开
公开(公告)号：JP2019095467A
公开(公告)日：2019-06-20
申请号：JP2017221788
申请日：2017-11-17
申请人： SHIBAURA MECHATRONICS CORP
发明人： MIYAMOTO TAKASHI , OKAMOTO YOSHIE , KODAMA SHUMPEI , NAKAZAWA KAZUKI , IINO YOSHINORI , YOSHIMORI HIROAKI
IPC分类号： G03F1/80 , G03F1/54 , G03F1/70 , H01L21/3065
摘要：【課題】簡易な手法で、エッチングの面内均一性を向上させることができるフォトマスクの製造方法を提供することである。【解決手段】実施形態に係るフォトマスクの製造方法は、エッチング対象膜の上にエッチングマスクを形成する工程と、前記エッチングマスクを用いて前記膜をエッチングする工程と、を備えている。前記エッチングマスクは、複数のパターンと、前記複数のパターンを囲むエッチング制御部と、を有している。前記エッチングマスクを形成する工程において、前記エッチング制御部の材料、前記エッチング制御部の幅、および、前記エッチング制御部と最も外側に形成されるパターンとの間の距離、の少なくともいずれかを変化させる。前記膜をエッチングする工程において、前記エッチング制御部の上方の空間に存在するエッチャントの分圧を変化させる。【選択図】図3

4. 发明专利

JP2005236012A Method and system for ashing 有权
标题翻译：用于爬行的方法和系统
公开(公告)号：JP2005236012A
公开(公告)日：2005-09-02
申请号：JP2004042936
申请日：2004-02-19
申请人： Shibaura Mechatronics Corp , 芝浦メカトロニクス株式会社
发明人： IINO YOSHINORI , IVAN PETROV GANASHEV , TSUGAMI YOSHIZO , SHIMATANI KOHEI
IPC分类号： H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide a method and a system for ashing by which a resist can be removed quickly by suppressing the oxidation etc., of the deformed layer of an implanted resist or a base metallic layer based on an idea which is different from a conventional idea.
SOLUTION: By the method for ashing, the resist having a surface deformed layer (120B) formed by ion implantation and an undeformed section (120A) provided under the deformed layer (120B) are removed. The method includes a first step (S10) of substantially removing the surface deformed layer (120B) of the resist by performing plasma treatment at first pressure, and a second step (S20) of removing the undeformed section (120A) of the resist by performing plasma treatment at second pressure which is higher than the first pressure.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种用于灰化的方法和系统，通过该方法和系统，通过抑制植入的抗蚀剂或基底金属层的变形层的氧化等，可以快速去除抗蚀剂，基于以下思想：与传统观念不同。解决方案：通过灰化方法，去除具有通过离子注入形成的表面变形层（120B）的抗蚀剂和设置在变形层（120B）下方的未变形部分（120A）。该方法包括：通过在第一压力下进行等离子体处理，基本上除去抗蚀剂的表面变形层（120B）的第一工序（S10）;以及通过进行除去抗蚀剂的未变形部分（120A）的第二工序（S20）在比第一压力高的第二压力下进行等离子体处理。版权所有（C）2005，JPO＆NCIPI

5. 发明专利

JP2003142465A MICROWAVE PLASMA TREATMENT DEVICE 审中-公开
公开(公告)号：JP2003142465A
公开(公告)日：2003-05-16
申请号：JP2001342738
申请日：2001-11-08
申请人： SHIBAURA MECHATRONICS CORP
发明人： IINO YOSHINORI
IPC分类号： H05H1/46 , B01J3/00 , B01J3/02 , B01J19/08 , H01L21/302 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To equalize a speed of plasma treatment of the whole of a substrate surface by equalizing a flow of plasma gas guided to a substrate and equalize the quality of the substrate after the treatment. SOLUTION: In a microwave plasma treatment device formed such that a microwave (22) is guided in a vacuum vessel through an approximately circular dielectric plate (18) forming a part of the vacuum vessel (10), reaction gas guided from the inside of the vacuum vessel to the vicinity of the dielectric plate is caused to effect plasma discharge by the microwave, and a substrate (30) held in the vacuum vessel is treated by using the plasma gas. At least a part of a gas introduction port (26) through which the reaction gas is guided to the vicinity of the dielectric plate is deviated in a manner to incline toward the central direction of the dielectric plate. It is desirable that a plurality of the gas introduction ports (26) are situated at equal intervals, all the gas introduction ports are deviated in the same revolution direction as opposed to the center of the dielectric plate, and a turning flow of reaction gas is generated.

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