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1. 发明专利

JP2002107687A METHOD AND DEVICE FOR MANUFACTURING LIQUID CRYSTAL DISPLAY DEVICE 失效
公开(公告)号：JP2002107687A
公开(公告)日：2002-04-10
申请号：JP2000295810
申请日：2000-09-28
申请人： SHARP KK
发明人： WATAYA KIMIHIDE , TANAKA HIROHISA
IPC分类号： G02F1/13 , G09F9/00
摘要： PROBLEM TO BE SOLVED: To efficiently substitute an area including a liquid crystal(LC) panel discriminated as a defective panel for an area including a good quality LC panel. SOLUTION: When an LC panel 11 on a mother glass board 10 is discriminated as a defective LC panel by inspection, a scribed scratch shown by a broken line is formed and the panel 11 is cut off from the scribed scratch. A good quality LC panel 21 advanced up to the same process as the cut defective LC panel 11 is cut off from another mother glass board. Then the LC panel 21 is struck to a position where the defective LC panel 11 is cut off from the mother glass board 10. After sticking the LC panel 21, the processing of a succeeding process is performed.

2. 发明专利

JP2000188257A MANUFACTURE OF CRYSTALLINE SILICON-BASED SEMICONDUCTOR THIN FILM 失效
公开(公告)号：JP2000188257A
公开(公告)日：2000-07-04
申请号：JP36426398
申请日：1998-12-22
申请人： SHARP KK , NISSIN ELECTRIC CO LTD
发明人： TSUCHIMOTO SHUHEI , TANAKA HIROHISA , OGATA KIYOSHI , KIRIMURA HIROYA
IPC分类号： H01L21/205 , C30B25/10 , H01L21/20
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing a crystalline silicon-based semiconductor thin film, capable of good crystallization at low temperatures and can be manufactured less expensively and with less energy than the prior art method adopting 3 steps. SOLUTION: In this method for manufacturing a crystalline silicon-based semiconductor thin film on a substrate S, a plasma P of a film source gas containing at least a silicon-based gas in the vicinity of the substrate S to form a thin film containing silicon as its main component, excited particles generated from the exciting-particle source gas are irradiated towards the substrate S to make silicon in the silicon-based thin film crystallization, and an impurity gas for formation of a silicon semiconductor is previously included in at least one of the film source gas and exciting-particle source gas.

3. 发明专利

JPH08293609A METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH08293609A
公开(公告)日：1996-11-05
申请号：JP9715295
申请日：1995-04-21
申请人： SHARP KK
发明人： MURAMOTO MASAHIKO , TANAKA HIROHISA
IPC分类号： G02F1/1333 , G02F1/136 , G02F1/1368 , H01L21/20 , H01L21/268 , H01L21/336 , H01L29/786
摘要： PURPOSE: To avoid sticking of blocking material to a substrate while maintaining the transparency of the substrate and suppressing the raising dust. CONSTITUTION: A silicon oxide as an impurity diffusion preventive film 210 is formed on a transparent insulating substrate 200 so as to form a semiconductor layer 220 on this silicon oxide film. At this time, since a conventional block member is not placed on the back side of this transparent insulating substrate 200, a semiconductor film 230 is naturally bonded to the back side. After the formation of a semiconductor layer surface roughening preventive film 240, the semiconductor layer 220 is irradiated with a laser beam to be crystallized. Next, the semiconductor film 230 is etched away using said film 240 as a surface protective film. Through these procedures, film sticking or dust production can be reduced during the formation step, furthermore, enabling the transmission LCD device, etc., to be manufactured without deteriorating the transmission factor of vissible light from back side by etching the rear side semiconductor film 230.

4. 发明专利

JPH07263704A THIN FILM TRANSISTOR AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH07263704A
公开(公告)日：1995-10-13
申请号：JP5409994
申请日：1994-03-24
申请人： SHARP KK
发明人： GOTO MASAHITO , TANAKA HIROHISA
IPC分类号： G02F1/136 , G02F1/1368 , H01L21/336 , H01L29/78 , H01L29/786
摘要： PURPOSE:To provide a thin film transistor, having little damage on an insulating film and the like, on which OFF current can be made small and the manufacturing process can be simplified. CONSTITUTION:A first poolycrystalline semiconductor layer 2 is formed on an insulative substrate 1, and a gate electrode 5 is formed thereon through the first insulating film 3. A second insulating film 6 is formed on the gate electrode 5, and the second semiconductor layers 7a and 7b, where impurities are introduced in high density, are deposited on the first semiconductor layer 2 in such a manner that at least a part of the layers 7a and 7b is partially brought into contact with each other. A metal layer, which constitutes a source electrode and a drain electrode, is formed in contact with the divided second semiconductor layers 7a and 7b. As the second semiconductor layers are formed by deposition, high density ion doping with impurities is unnecessitated.

5. 发明专利

JPH0758338A SEMICONDUCTOR DEVICE AND ITS PRODUCTION 失效
公开(公告)号：JPH0758338A
公开(公告)日：1995-03-03
申请号：JP21815693
申请日：1993-08-10
申请人： SEMICONDUCTOR ENERGY LAB , SHARP KK
发明人： FUNADA FUMIAKI , MORITA TATSUO , TANAKA HIROHISA , CHIYOU KOUYUU , TAKAYAMA TORU
IPC分类号： G02F1/136 , G02F1/1368 , H01L21/00 , H01L21/20 , H01L21/336 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/78 , H01L29/786
摘要： PURPOSE:To realize a high-speed operation in a peripheral circuit part and decrease OFF-state current value in a pixel part by forming TFTs in both parts by crystalline silicon films which are respectively crystal-grown in a parallel direction to the carrier flow in the peripheral circuit part and in a vertical direction against it in the pixel part. CONSTITUTION:An amorphous silicon film 104 is annealed for crystallization in a hydrogen reduction atmosphere or inactive atmosphere. At this time, the film 104 is crystallized in a vertical direction against a substrate 101 in an area where a nickel silicide film is formed selectively. In region adjacent to the substrate 100, crystal growth is progressed in a horizontal direction against the region 100 (a direction parallel to the substrate) as indicated in an arrow mark 105. The source/drain regions of the TFT in the peripheral circuit part are formed in such a crystal growth direction. In addition, those of the TFT in the pixel part are formed in a direction which crosses at a right angle the crystal growth direction indicated by the mark 105. Thus high speed operation can be realized.

6. 发明专利

JPH0680449B2 失效
公开(公告)号：JPH0680449B2
公开(公告)日：1994-10-12
申请号：JP29246587
申请日：1987-11-19
申请人： SHARP KK
发明人： KATAYAMA MIKIO , TANAKA HIROHISA , SHIMADA YASUNORI , MORIMOTO HIROSHI
IPC分类号： G09F9/30 , G02F1/133 , G02F1/136 , G02F1/1368 , H01L21/82

7. 发明专利

JPH05232465A 失效
公开(公告)号：JPH05232465A
公开(公告)日：1993-09-10
申请号：JP3112792
申请日：1992-02-19
申请人： SHARP KK
发明人： SHIMADA YASUNORI , TANIGUCHI KOJI , TANAKA HIROHISA , NAKAMURA HISAKAZU , MITSUI SEIICHI , KIMURA TADASHI
IPC分类号： G02F1/1333 , G02B5/08 , G02F1/1335
摘要： PURPOSE:To improve the contrast of the reflection type liquid crystal display device by obtaining reflection plates having uniform light scatterability and good reflection characteristics. CONSTITUTION:This liquid crystal display device is constituted by having an insulating substrate 1b on which transparent electrodes 14 are formed, an active matrix substrate 1a which is constituted by forming pixel electrodes consisting of reflection films 5 on a substrate having many pieces of fine ruggedness including curved surface parts consisting of first films 2 having ruggedness and second films 4 formed by applying liquid on the first films 2 and curing the liquid and a liquid crystal layer 16 which is encapsulated between the insulating substrate 1b and the active matrix substrate 1a. The liquid for forming the second films 4 is applied on the first films 2 having many pieces of the fine ruggedness and curing the coating, by which the above-mentioned ruggedness having the plane parts are made into the ruggedness having the curved surface parts. The light scattering characteristic of the reflection films 5 formed thereon is thereby improved.

8. 发明专利

JPH0555256A ION IMPLANTATION 失效
公开(公告)号：JPH0555256A
公开(公告)日：1993-03-05
申请号：JP21724991
申请日：1991-08-28
申请人： SHARP KK , NISSIN ELECTRIC CO LTD
发明人： MITANI YASUHIRO , TANAKA HIROHISA , MORIMOTO HIROSHI , ANDO YASUNORI
IPC分类号： H01L21/265 , H01L21/336 , H01L29/78 , H01L29/786
摘要： PURPOSE:To implant impurity ions in an amorphous silicon film without reducing the resistance value of a gate insulating film by a method wherein mixed ion energy is applied from the side of the amorphous silicon formed on the upper surface of the gate insulating film. CONSTITUTION:A mixed ion beam proceeds to the direction of an ion beam irradiation object 1 and is applied to the whole surface of the object 1 in a shower form. In the mixed ion beam, an impurity ion beam in the solid body has a large slowing-down action, while a hydrogen ion beam has a small slowing-down action and the distance of the impurity ion beam to proceed in an amorphous silicon film 19 and a gate insulating film 18 is smaller than that of the hydrogen ion beam to proceed in the films 19 and 18. Accordingly, impurity ions are implanted in both regions 19a and 19c of the film 19 and hydrogen ions do not stagnate in the film 18. Thereby, it becomes possible to form a thin film transistor having the gate insulating film of a large resistance value.

9. 发明专利

JPH0468318A ACTIVE MATRIX SUBSTRATE 失效
公开(公告)号：JPH0468318A
公开(公告)日：1992-03-04
申请号：JP18193990
申请日：1990-07-09
申请人： SHARP KK
发明人： TANAKA HIROHISA , TANIGUCHI KOJI , HISHIDA TADANORI
IPC分类号： G02F1/1333 , G02F1/136 , G02F1/1362 , G02F1/1368
摘要： PURPOSE:To easily form an inter-layer insulating film in a fine shape and to eliminate a defect in insulation between a signal line and a pixel electrode by forming the inter-layer insulating film in multi-layered structure of an organic insulating film and an organic insulating film. CONSTITUTION:This active matrix substrate is equipped with the inter-layer insulating film 10 which is formed covering a switching element 13 formed on an insulating substrate 1, a contact hole 12 formed at the part of the inter- layer insulating film 10 on the output terminal of the switching element 13, and the picture element electrode 11 which is connected to the output terminal of the switching element 13 through the contact hole 12 formed on the inter- layer insulating film. The inter-layer insulating film 10 is formed in the multi- layered structure of the organic insulating film 10a of polyimide resin, etc., and the inorganic insulating film 10b of silicon oxide, etc., and the organic insulating film 10a is etched by using the inorganic insulating film 10b as an etching mask, and then the inter-layer insulating film 10 can be patterned in the fine shape. Consequently, the inter-layer insulating film 10 in the fine shape can easily be formed and an insulation defect between a signal line and a picture element electrode is eliminated.

10. 发明专利

JPH03215834A ACTIVE MATRIX SUBSTRATE 失效
公开(公告)号：JPH03215834A
公开(公告)日：1991-09-20
申请号：JP1154390
申请日：1990-01-19
申请人： SHARP KK
发明人： HISHIDA TADANORI , TANAKA HIROHISA
IPC分类号： G02F1/1333 , G02F1/1343 , G02F1/1345 , G02F1/136 , G02F1/1368
摘要： PURPOSE:To decrease the signal delay on additive capacity wirings and to obtain the display device having a high image grade by electrically connecting the adjacent additive capacity wirings to each other and taking out leader wires from the junctures at both ends of the respective additive capacity wirings. CONSTITUTION:The additive capacity wirings 2 are formed between gate bus wirings 1a and 1b. The additive capacity wirings 2 adjacent to each other are connected on the side where leader wires 21a and 21b of the gate bus wirings 1a and 1b positioned therebetween are not provided. The leader wires 22 and 22b are led out of the junctures thereof and terminals 12a and 12b for the additive capacities of the width larger than the leader wires 22a and 22b are provided at the terminals thereof. The signals corresponding to the video signals impressed to picture element electrodes are supplied through common wirings 3a and 3b of the additive capacities from both ends of the additive capacity wirings 2 and, therefore, the signal delay wirings on the additive capacity wirings 2 are decreased.

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