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1. 发明专利

JPH04335324A PRODUCTION OF ELECTROOPTICAL DEVICE 失效
公开(公告)号：JPH04335324A
公开(公告)日：1992-11-24
申请号：JP10614691
申请日：1991-05-10
申请人： SEIKO INSTR INC , TOKUDA SEISAKUSHO
发明人： KURODA YOSHIKI , KURIYAMA NOBORU , IWAMI MUNENORI
IPC分类号： G02F1/136 , G02F1/1365 , H01L49/00
摘要： PURPOSE:To minimize the damages to films and to prevent the deterioration of the electrooptical device by minimizing the flow of a high-frequency current to a substrate. CONSTITUTION:The thin films consisting of amorphous Si contg. substantially no hydrogen are deposited on the substrate 12 by the high-frequency sputtering device which is installed with a counter electrode 13 having holes between a sputtering electrode 14 and a supporting jig 11 for the substrate 12 and is smaller in the total area of the holes of the counter electrode 13 than the area of the target material provided on the sputtering electrode 14.

2. 发明专利

JPH04335323A PRODUCTION OF ELECTROOPTICAL DEVICE 失效
公开(公告)号：JPH04335323A
公开(公告)日：1992-11-24
申请号：JP10614491
申请日：1991-05-10
申请人： SEIKO INSTR INC , TOKUDA SEISAKUSHO
发明人： KURODA YOSHIKI , KURIYAMA NOBORU , IWAMI MUNENORI
IPC分类号： G02F1/136 , G02F1/1365 , H01L49/00
摘要： PURPOSE:To minimize the damages to films and to prevent the deterioration of the electrooptical device as well as to improve the mass productivity thereof by minimizing the flow of a high-frequency current to a substrate. CONSTITUTION:The thin films consisting of amorphous Si contg. substantially no hydrogen as a base are deposited on a substrate 12 by a double-surface passage type high-frequency sputtering device which insulates the substrate 12 from a vacuum chamber and sputtering electrodes and varies the phases of the high frequencies supplied to both-surface high-frequency sputtering electrodes by about 180 deg. from each other.

3. 发明专利

JPH04335325A PRODUCTION OF ELECTROOPTICAL DEVICE 失效
公开(公告)号：JPH04335325A
公开(公告)日：1992-11-24
申请号：JP10614891
申请日：1991-05-10
申请人： SEIKO INSTR INC , TOKUDA SEISAKUSHO
发明人： KURODA YOSHIKI , KURIYAMA NOBORU , IWAMI MUNENORI
IPC分类号： G02F1/136 , G02F1/1365 , H01L49/00
摘要： PURPOSE:To suppress the damages to films and to prevent the deterioration of the electrooptical device by depositing the thin films consisting of amorphous Si as a base by high-frequency sputtering using a supporting jig from which the parts in contact with substrated are removed. CONSTITUTION:A substrate supporting plate 23 made of a stainless steel to be mounted with the transparent substrates 12 on both surfaces is hollowed to a cavity in a rectangular part 24 on the side inner by about 5mm from the outer peripheries of the transparent substrates 12 set thereon. The substrate supporting jig is constituted of a substrate supporting frame 11 used to insert and hold the transparent substrates 12 between this frame and the substrate supporting plate 23 and the substrate supporting plate 23. Transparent picture element electrodes 13 are formed by depositing indium tin oxide films over the entire surface of the transparent substrates 12 and patterning the films to prescribed shapes. The silicon nitride films are formed with the reactive sputtering method by a high-frequency sputtering device using an amorphous material 15 essentially consisting of silicon and gaseous argon contg. gaseous nitrogen. The nonlinear resistance films of silicon oxide are deposited by using gaseous oxygen as a reactive gas.

4. 发明专利

JPH02225663A SPUTTERING DEVICE 失效
公开(公告)号：JPH02225663A
公开(公告)日：1990-09-07
申请号：JP4596289
申请日：1989-02-27
申请人： TOKUDA SEISAKUSHO
发明人： KURIYAMA NOBORU
IPC分类号： C23C14/34 , C23C14/35 , H01L21/203
摘要： PURPOSE:To form sputtered and vapor deposited films having a uniform film thickness distribution on a large-sized substrate by concentrically disposing plural targets and providing plural gas supplying means and discharging means around the respective targets. CONSTITUTION:The plural circular or polygonal annular targets 3, 5, 7 are concentrically disposed on a circular table 1. Plural gas supplying pipes 9 are erected around the respective targets 3, 5, 7 and prescribed gases are uniformly released into a chamber 2b. The gases are uniformly discharged through the spacings of supporting materials 1 around the respective targets 3, 5, 7 to uniformize the concns. of the gases in the chamber 2b. High-pressure DC electric powers are supplied from 3 units of DC power source to the respective targets 3, 5, 7. The DC powers are detected and are fed back to a control circuit, by which the supply electric energies are independently controlled.

5. 发明专利

JPS63136627A ETCHING APPARATUS 失效
公开(公告)号：JPS63136627A
公开(公告)日：1988-06-08
申请号：JP28323486
申请日：1986-11-28
申请人： TOKUDA SEISAKUSHO
发明人： KOGO MINORU , KURIYAMA NOBORU
IPC分类号： H01L21/302 , H01L21/3065
摘要： PURPOSE:To observe a plasma state during etching or the state of a wafer in the plasma by composing the ceiling plate of a chamber of a transparent insulating material, disposing a metal mesh which becomes an earth electrode on the lower surface of the ceiling plate, and placing a workpiece to be processed, such as a wafer thereunder. CONSTITUTION:A ceiling plate 2 is composed of a transparent insulator, such as glass, and a metal mesh 4 which becomes the earth side electrode of a high frequency discharge is adhered to the lower surface of the plate. This mesh 4 is more preferably to be formed in a triangular sectional shape than to be formed, for example, in a semicircular sectional shape, and in order to reduce the reflection due to the mesh 4, it is preferable to surface treat it with a black color. A high frequency is applied oppositely to the mesh 4 to provide a discharge electrode 6 for generating plasma gas, the upper surface is flatly formed, and a tray 7 is placed thereon. A wafer 8 is contained as a workpiece in the tray 7. Thus, the etching state of the workpiece can be observed wholly.

6. 发明专利

JPS61290804A MICROWAVE GENERATOR 失效
公开(公告)号：JPS61290804A
公开(公告)日：1986-12-20
申请号：JP13165185
申请日：1985-06-19
申请人： TOKUDA SEISAKUSHO
发明人： KURIYAMA NOBORU
IPC分类号： H05B6/66 , H03B9/10 , H05B6/68
摘要： PURPOSE:To attain highly accurate process control by inserting a smoothing circuit smoothing the output of a rectifier circuit between the rectifier circuit and a magnetron. CONSTITUTION:A smoothing capacitor 36 is connected to the output terminal of the rectifier circuit 31, the high potential of the capacitor 36 is grounded and connected to the anode of the magnetron 39 via a parallel circuit comprising a current detection resistor 37 and a bypass capacitor 38. A potential across the current detecting resistor 37 is given as a control input to a control circuit 30 and the low potential side of the smoothing capacitor 36 is connected to the heater of the magnetron via a choke coil 40 and a filter 41. That is, the smoothing capacitor 36 and the choke coil 40 form a smoothing circuit. Then a variable AC voltage generated by the control of transistors 28, 29 constituting an inverter is given to the rectifier circuit 31 via a transformer 27, full rectifying is applied and the voltage is smoothed by the smoothing capacitor 36 and the coke coil 40.

7. 发明专利

JPS60206137A DRY ETCHING DEVICE 失效
公开(公告)号：JPS60206137A
公开(公告)日：1985-10-17
申请号：JP6276984
申请日：1984-03-30
申请人： TOSHIBA KK , TOKUDA SEISAKUSHO
发明人： SUGIHARA KAZUYOSHI , TOUJIYOU TOORU , NINOMIYA MASAHARU , YAMAZAKI TAKASHI , OKANO HARUO , KURIYAMA NOBORU
IPC分类号： H01L21/302 , H01L21/3065
摘要： PURPOSE:To make even etching process of a sample feasible at high speed without extending magnet size while increasing the diameter thereof by a method wherein magnet pairs are shifted in one direction scanning the high density plasma region above s sample constantly in one direction as well as equalizing the integral values while they are exposed to the region making the magnet pairs repulse with each other. CONSTITUTION:A high density plasma region 32 is shifted above a sample 18 by means of scanning permanent magnets 19 in one direction of endless track so as to etch the sample 18 at high speed. At this time, the times when the permanent magnets 19 are exposed to the high density plasma region 32 at an arbitrary point are almost equalized due to the one directional shifting of said region 32. Any failure such as attraction of magnet pairs shifting in parallel with each other may not happen since the magnet pairs comprising permanent magnets 19 are arranged to make the adjoining pairs repulse with each other. Through these procedures, a speed change of the permanent magnets 19 in the parallel shifting direction due to a load fluctuation in case of changing from parallel shifting to rotary shifting may be prevented from happening so as to etch the overall sample evenly at high speed.

8. 发明专利

JPS6063367A SPUTTERING DEVICE 失效
公开(公告)号：JPS6063367A
公开(公告)日：1985-04-11
申请号：JP17044883
申请日：1983-09-14
申请人： TOKUDA SEISAKUSHO
发明人： KURIYAMA NOBORU
IPC分类号： C23C14/40 , C23C14/54 , H01J37/34
摘要： PURPOSE:To perform exact film formation by supplying respectively independently high-frequency electric power with good reproducibility to the cathode on a target side and a substrate holder. CONSTITUTION:A power supply device is provided with the 1st and the 2nd high- frequency power sources 101, 102 consisting of oscillators, amplifiers, etc. and the outputs therefrom are applied respectively via the 1st and 2nd high-frequency cables 111, 112 to the 1st and 2nd matching circuits 121, 122. The 1st circuit 121 is provided with a capacitor 131 for matching, a coil 151 and a capacitor 161 for interrupting DC and is housed in a matching box 181. The 2nd matching circuit 122 is provided with a capacitor 132 for matching, a coil 152 and a capacitor 162 for interrupting DC and is housed in a matching box 182. Wattmeters 201, 202 for high frequencies are connected respectively to the 1st and 2nd high-frequency cables 111, 122 and voltmeters 21, 22 for monitoring self-biasing voltage are connected respectively to the output side of the respective matching circuits 121, 122.

9. 发明专利

JPS59104476A Spattering device 失效
标题翻译：散热装置
公开(公告)号：JPS59104476A
公开(公告)日：1984-06-16
申请号：JP21109482
申请日：1982-12-01
申请人： Tokuda Seisakusho Ltd
发明人： KURIYAMA NOBORU , WATANABE OSAMU
IPC分类号： C23C14/36 , C23C14/35 , H01J37/34
CPC分类号： H01J37/3408
摘要： PURPOSE:To obtain the titled device which holds discharge voltage constant, by providing a mechanism for moving a magnet along a vertical direction to a target-supporting plate, and separating the magnet from a target in response to the lowering of said discharge voltage. CONSTITUTION:A power source 15 for reference voltage and a variable resistor 16 for adjustment are parallely connected to a target-supporting plate 3 to which a target 5 is fixed and a power source 14 connected to a vacuum tank 1. Predetermined voltage is preset by the variable resistor 16 for adjustment, and discharge voltage is measured by a variable resistor 19 for detection. The measured discharge voltage and the preset voltage are comparatively operated with each other by a comparator 18. When the discharge voltage becomes below the preset voltage, a signal is dispatched to a driving circuit 21. Hence, a moving stand 11 is moved by the driving of a moving motor 12 to separate a magnet 6 from the target-supporting plate 3. Thus, a magnetic field is weakened, while the discharge voltage is raised again.
摘要翻译：目的：为了获得保持放电电压恒定的标题装置，通过提供将磁体沿着垂直方向移动到目标支撑板的机构，并且响应于所述放电电压的降低而将磁体与目标分离。构成：用于参考电压的电源15和用于调节的可变电阻器16平行地连接到目标5固定到的目标支撑板3和连接到真空容器1的电源14.预定电压由用于调节的可变电阻器16和放电电压由用于检测的可变电阻器19测量。测量的放电电压和预设电压通过比较器18相互操作。当放电电压变得低于预设电压时，将信号发送到驱动电路21.因此，移动支架11通过驱动移动电动机12将磁体6与目标支撑板3分离。因此，磁场减弱，同时放电电压再次升高。

10. 发明专利

JPS56120130A SPATTERING DEVICE 失效
公开(公告)号：JPS56120130A
公开(公告)日：1981-09-21
申请号：JP2266980
申请日：1980-02-27
申请人： TOKYO SHIBAURA ELECTRIC CO , TOKUDA SEISAKUSHO
发明人： HORIIKE YASUHIRO , JIYOU HIDETAKA , KURIYAMA NOBORU
IPC分类号： C23C14/34 , C23C14/56 , H01L21/302 , H01L21/3065
摘要： PURPOSE:To effectively exhaust gas from a spattering process chamber by changing the area of an overlapped part while maintaining it in a triangle and also fully throttling a valve following the rotation of a rotor of a conductance valve. CONSTITUTION:A variable conductance valve is installed across an exhaust system of a diffusion pump, etc. which exhaust gas from a process chamber for etching and piling through spattering under decompression. Said valve is composed of a cylindrical rotor 30 and a valve seat 31 tightly attached to the external periphery of the rotor 30 and gas is exhausted through an overlapped opening of the rotor 30 and the valve seat 31. In this case, the overlapped part is maintained in a triangle following the rotation of the rotor 30 and at the same time, its area is changed and also the valve can be fully throttled. Thus it is possible to effectively exhaust gas from the process chamber for etching or piling through spattering.

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