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1. 发明专利

JPH11307832A PIEZOELECTRIC THIN FILM ELEMENT, ITS MANUFACTURE AND INK JET-TYPE RECORDING HEAD 失效
公开(公告)号：JPH11307832A
公开(公告)日：1999-11-05
申请号：JP11509398
申请日：1998-04-24
申请人： SEIKO EPSON CORP , UBE INDUSTRIES
发明人： MURAI MASAMI , NISHIWAKI MANABU , HASHIMOTO KAZUO , ABU TOSHIHIKO
IPC分类号： B41J2/045 , B41J2/055 , B41J2/135 , B41J2/14 , B41J2/16 , H01L41/09 , H01L41/22 , H01L41/23 , H01L41/317 , H01L41/319
摘要： PROBLEM TO BE SOLVED: To prevent adhesion between a protection film and a substrate from deteriorating by forming a protection layer and a base layer on the almost whole face of a substrate and forming a piezoelectric thin film on the base layer. SOLUTION: A protection layer 14 formed of platinum is formed on the whole face of a nickel electroforming substrate 12. A base layer 16 formed of titanium is formed on the whole face of the protection layer 14. Patter etching is executed so that the base layer 16 remains based on a photo-lithography method using resist. The crystal of a film formed of zirconate titanate is formed on the base layer 16. A film 18 formed of zirconate titanate is grown on the crystal by water/heat synthesis method. An individual electrode 22 is stacked/ formed on the film 18. Thus, the deterioration of adhesion between the protection layer 14 and the substrate 12 can be prevented.

2. 发明专利

JPH1117239A MANUFACTURE OF THIN FILM PIEZOELECTRIC ELEMENT AND THIN FILM PIEZOELECTRIC ELEMENT AND INK JET TYPE RECORDING HEAD 失效
公开(公告)号：JPH1117239A
公开(公告)日：1999-01-22
申请号：JP16428097
申请日：1997-06-20
申请人： SEIKO EPSON CORP , UBE INDUSTRIES
发明人： NISHIWAKI MANABU , MURAI MASAMI , HASHIMOTO KAZUO , ABU TOSHIHIKO
IPC分类号： B41J2/045 , B41J2/055 , B41J2/135 , B41J2/14 , B41J2/16 , C23C28/02 , H01L41/09 , H01L41/22 , H01L41/39 , H01L41/24
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing a thin film piezoelectric element, in which a piezoelectric film with excellent piezoelectric characteristics can be selectively formed in a prescribed area by a hydrothermal synthesizing method. SOLUTION: This manufacturing method is constituted of a first process for forming an alkaliproof protecting film 5 at a part except a piezoelectric film formation area on a substrate 1 on which a lower electrode is formed, a second process for forming a seed crystal 6 for forming a piezoelectric film on the substrate 1 on which the protecting film 5 is formed, a third process for removing the protecting film 5 from the substrate 1 on which the seed crystal 6 is formed, and a fourth process for removing the protecting film 5 and crystal-growing the seed crystal 6.

3. 发明专利

JP2004006735A POLYIMIDE FILM FOR INSULATING INSIDE OF SEMICONDUCTOR PACKAGE AND LAMINATED SUBSTRATE 审中-公开
公开(公告)号：JP2004006735A
公开(公告)日：2004-01-08
申请号：JP2003079611
申请日：2003-03-24
申请人： UBE INDUSTRIES
发明人： TAKAHASHI TAKUJI , ABU TOSHIHIKO , NARUI KOJI , KATSUKI SHOZO
IPC分类号： C08J7/00 , B32B27/34 , H01L21/60
摘要： PROBLEM TO BE SOLVED: To provide a polyimide film for insulating the inside of a semiconductor package with which a thinned copper-polyimide film laminated body is supplied and destruction due to steam inside the semiconductor package is easily reduced, and to provide a laminated substrate. SOLUTION: The polyimide film for insulating the inside of the semiconductor package is provided with a surface to which a vacuum plasma electric discharge processing is executed, and satisfies the following conditions: (1) a thickness is 20-60 μm; (2) a steam transmission coefficient is 0.05-0.8 g/mm/m 2 ×24 hours; (3) a water absorption coefficient is 2.0% or less; and (4) a tensile elastic modulus is 5,000 MPa or more. The laminated substrate is provided with an electric copper plating layer surface on at least one surface of the polyimide film, initial peel strength is 1 kgf/cm or more, and the peel strength after being heated at 150°C for 24 hours is 0.6 kgf/cm or more. The polyimide film for insulating the inside of the semiconductor package is supplied by a vacuum electric discharge processing. COPYRIGHT: (C)2004,JPO

4. 发明专利

JP2002293965A METHOD FOR TREATING SURFACE AND POLYIMIDE FILM HAVING METAL THIN FILM 失效
公开(公告)号：JP2002293965A
公开(公告)日：2002-10-09
申请号：JP2001096253
申请日：2001-03-29
申请人： UBE INDUSTRIES
发明人： KATSUKI SHOZO , ABU TOSHIHIKO , NAKAYAMA OSAMU , YAMAGUCHI HIROAKI
IPC分类号： C08J7/04 , B32B15/08 , B32B15/088 , B32B27/34 , C08J7/02 , C08J7/14 , C23C14/02 , C23C14/20 , H05K1/03 , H05K3/38
摘要： PROBLEM TO BE SOLVED: To provide a method for treating the surface of a polyimide film by which lowering of peel strength is slight even after a metal thin film is formed on the surface of the biphenyltetracarboxylic acid polyimide film and is placed under a high temperature or high humidity, and to provide the polyimide film having the metal thin film. SOLUTION: The method consists of treating the surface of the polyimide film having a biphenyltetracarboxylic acid component with a solution containing potassium permanganate and/or sodium permanganate and potassium hydroxide and/or sodium hydroxide, and then treating the resultant surface with an acid and thereby improving the adhesive strength to a metal.

5. 发明专利

JPH0955452A BOARD FOR ELECTRICAL CIRCUIT USE 失效
公开(公告)号：JPH0955452A
公开(公告)日：1997-02-25
申请号：JP20572495
申请日：1995-08-11
申请人： UBE INDUSTRIES
发明人： ABU TOSHIHIKO , SHIMIZU MICHIMASA , FUJII KAZUHIRO
IPC分类号： C03B19/01 , H01L23/12
摘要： PROBLEM TO BE SOLVED: To provide a board for electrical circuit use, which can be used suitably for hybrid IC use or the like and has little warpage. SOLUTION: The first major surface of a thin plate 12 consisting of a semiconductor film or a conductor film is covered with a first glass material 11 and a support substrate 15 is joined to the second main surface, which opposes to the first major surface of the thin plate 12, in contact with the second major surface with a second glass material 14.

6. 发明专利

JPH0936220A COMPOSITE SEMICONDUCTOR SUBSTRATE 失效
公开(公告)号：JPH0936220A
公开(公告)日：1997-02-07
申请号：JP18179095
申请日：1995-07-18
申请人： UBE INDUSTRIES
发明人： ABU TOSHIHIKO , SHIMIZU MICHIMASA , FUJII KAZUHIRO
IPC分类号： H01L21/762 , H01L21/02 , H01L21/76 , H01L27/12
摘要： PROBLEM TO BE SOLVED: To provide a composite semiconductor substrate which does not warp much even when the wafer diameter is large. SOLUTION: In a composite semiconductor substrate constituted by sticking one or a plurality of single-crystal semiconductor areas 11 separated from each other to a supporting substrate which supports the areas 11 with a vitreous material, the bottom and side faces of the semiconductor areas 11 are coated with insulating films 12 and the supporting substrate is composed of two substrates 14 and 16 stuck to each other with a vitreous material 15.

7. 发明专利

JPH08264639A MANUFACTURE OF COMPOSITE SEMICONDUCTOR SUBSTRATE 失效
公开(公告)号：JPH08264639A
公开(公告)日：1996-10-11
申请号：JP6443295
申请日：1995-03-23
申请人： UBE INDUSTRIES
发明人： FUJII KAZUHIRO , KUNISAWA TETSUO , ABU TOSHIHIKO
IPC分类号： H01L21/762 , H01L21/02 , H01L21/316 , H01L27/12
摘要： PURPOSE: To suppress the irregularities in the composition and characteristics of glass substance, to improve the humidity resistance of a composite semiconductor substrate and to reduce the warpage of the substrate by controlling the deposition of vitreous fine particles by scanning plural times an oxy-hydrogen flame burner to the junction surface side of a semiconductor single crystalline region. CONSTITUTION: A glass substance layer 13 for connecting a plurality of semiconductor single crystalline regions 11 isolated from each other to a support board 15 is obtained by heating and sintering vitreous fine particles containing SiO2 and B2 O3 as main ingredients obtained by supplying a raw material containing silicon compound as a main ingredient into an oxy-hydrogen flame burner to burn it. The irregularity in the composition ratio of the SiO2 to the B2 O3 in the particles in the thickness direction of the junction surface is reduced when the particles are deposited in multilayer state by scanning plural times the burner at the junction surface side of the region 11 on a semiconductor substrate 10, and depositing the particles in multilayer state on the junction surface. Thus, the irregularity in the atomic ratio of the layer 13 in the thickness direction after heating and connecting is reduced.

8. 发明专利

JPH02184553A PRODUCTION OF SPUTTERING TARGET FOR THIN FILM OF HIGH-TEMPERATURE SUPERCONDUCTOR 失效
公开(公告)号：JPH02184553A
公开(公告)日：1990-07-19
申请号：JP191989
申请日：1989-01-10
申请人： UBE INDUSTRIES
发明人： ODAN KYOJI , DAIMON HIROSHI , MIURA HIROSHI , FUJII KAZUHIRO , BANDO YASUO , ABU TOSHIHIKO
IPC分类号： C04B35/00 , C01G1/00 , C04B35/45 , C23C14/34 , H01B13/00 , H01L39/24
摘要： PURPOSE:To obtain a sputtering target having exceedingly uniform element composition and able to obtain high-temperature superconductor thin film in excellent reproducibility by forming precipitate containing whole elements of high-temperature superconductor with contact of solutions of compound of every elements constructing high-temperature superconductor to precipitant. CONSTITUTION:In a production of sputtering target for forming thin film of high-temperature superconductor composed of one element selected from rare earth elements, Bi and Tl, alkaline earth element, copper and oxygen, following method is adopted. That is, solutions of compounds of above-mentioned every elements, or solutions in which at least two of the every elements are mixed, are brought to contact with precipitant to form precipitate containing whole elements of high-temperature superconductor, then said precipitate is calcined, molded and sintered.

9. 发明专利

JP2011068016A Tentering machine 有权
标题翻译：丝网机
公开(公告)号：JP2011068016A
公开(公告)日：2011-04-07
申请号：JP2009220604
申请日：2009-09-25
申请人： Ube Industries Ltd , 宇部興産株式会社
发明人： IKEUCHI HIROMICHI , NODA YUJIRO , NAGOSHI YASUHIRO , FUJINAGA TAKESHI , ABU TOSHIHIKO , KIMURA MASAKATSU
IPC分类号： B29C55/02
摘要： PROBLEM TO BE SOLVED: To provide a tentering machine in which the generation of metal powder by friction is reduced by forming its structure so that the sliding friction resistance of the tenter chain is reduced to make it hardly slant. SOLUTION: The tentering machine has tenter rails arranged on both sides of a film transportation path and a pair of the tenter chains 5 moving along the tenter rails. The tenter chain 5 has a bearing 61 supported rotatably around a shaft member 60 extending in parallel to a film transportation surface and perpendicularly to the longitudinal direction of the tenter rails. The shaft member 60 is fixed to an outer plate 54a constituting an outer link. A film holding mechanism for gripping the edge part of the film which has a pin plate 64 and a plurality of pins 63 is fixed to the outer plate 54a through an attachment plate 63. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：解决的问题：提供一种拉幅机，其中通过形成其结构来减少摩擦产生金属粉末，使得拉幅机链的滑动摩擦阻力减小，使其几乎不倾斜。解决方案：拉幅机具有布置在胶片输送路径两侧的拉幅轨道和沿着拉幅轨道移动的一对拉幅机链条5。拉幅机链5具有轴承61，该轴承61围绕平行于薄膜输送表面并垂直于拉幅机纵向方向延伸的轴构件60可旋转地支撑。轴构件60固定在构成外链节的外板54a上。用于夹持具有销板64和多个销63的膜的边缘部分的胶片保持机构通过安装板63固定到外板54a。版权所有（C）2011，JPO＆INPIT

10. 发明专利

JP2002331628A POLYIMIDE SHEET MOLDED OBJECT AND METHOD FOR MANUFACTURING THE SAME 失效
公开(公告)号：JP2002331628A
公开(公告)日：2002-11-19
申请号：JP2001141524
申请日：2001-05-11
申请人： UBE INDUSTRIES
发明人： YAMAMOTO TOMOHIKO , TAKAHASHI TAKUJI , KATO KATSUZO , ABU TOSHIHIKO
IPC分类号： C08J7/00 , B32B27/34 , C08G73/10
摘要： PROBLEM TO BE SOLVED: To provide a polyimide sheet molded object having a thick polyimide sheet, excellent in heat resistance and suitable as a moldable spacer film for TAB, and also to provide a method for manufacturing the same. SOLUTION: The polyimide sheet molded object is constituted by laminating a hot-press bonding multilayered polyimide film. Hot-press bonding polyimide layers are provided on both surfaces of a heat-resistant polyimide layer, on a plurality of polyimide films each of which is obtained from a 3,3',4,4'- biphenyltetracarboxylic acid dianhydride or a derivative thereof and 4-4'- diaminophenyl ether as essential components. Both ends of the polyimide sheet with a thickness of 150 μm or more are processed.

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