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JP2005123340A Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：JP2005123340A
公开(公告)日：2005-05-12
申请号：JP2003355586
申请日：2003-10-15
申请人： Rohm Co Ltd , ローム株式会社
发明人： HIGASHIDA YOSHIFUMI , YATO SHINJI
IPC分类号： H01L27/04 , H01L21/822 , H01L21/8234 , H01L27/06 , H01L27/088 , H01L29/78
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device with built-in resistor of a high resistance value for pull-up or pull-down into a semiconductor chip without raising the cost of the semiconductor chip.
SOLUTION: In the semiconductor device having a gate electrode pad 10 and a source electrode 20 on the surface of the semiconductor chip 2a, and provided with Zener diodes 21(21a, 21b, 21c) formed of polysilicon; high resistors 11(11a, 11b, 11c) formed of polysilicon are formed at the lower side of gate electrode pad 10 while both ends of them are electrically connected to the gate electrode pad 10 and the source electrode 20.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：为了提供具有高电阻值的内置电阻器的半导体器件，用于上拉或下拉到半导体芯片中，而不会增加半导体芯片的成本。解决方案：在半导体芯片2a的表面上具有栅电极焊盘10和源电极20的半导体器件中，并且设置有由多晶硅形成的齐纳二极管21（21a，21b，21c）在栅电极焊盘10的下侧形成由多晶硅形成的高电阻器11（11a，11b，11c），同时它们的两端与栅电极焊盘10和源电极20电连接。 C）2005，JPO＆NCIPI

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