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1. 发明专利

JP2007074840A Semiconductor integrated circuit device 有权
标题翻译：半导体集成电路设备
公开(公告)号：JP2007074840A
公开(公告)日：2007-03-22
申请号：JP2005260344
申请日：2005-09-08
申请人： Renesas Technology Corp , 株式会社ルネサステクノロジ
发明人： TANAKA HITOSHI , ISHIBASHI MASAKAZU , FURUNO TAKESHI , UTSUNOMIYA HIROTO
IPC分类号： H02M3/07 , G06K19/07 , H01L21/822 , H01L27/04
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit device wherein an operating voltage margin is improved by a simple constitution, and in particular, a semiconductor integrated circuit device dedicated to a wireless IC tag that can lengthen a communication distance by a simple constitution. SOLUTION: Propagated energy is inputted to an input terminal in the form of an electrical signal. A direct-current voltage is generated from the inputted electrical signal at a power supply circuit. An internal voltage different from the direct-current voltage is formed at a charge pump circuit with a limited current at start, and an internal circuit is operated at the internal voltage. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：解决的问题：提供一种通过简单的结构提高工作电压裕度的半导体集成电路器件，特别是专用于无线IC标签的半导体集成电路器件，其可以通过一个简单的宪法。
解决方案：传播能量以电信号的形式输入到输入端。在电源电路处从输入的电信号产生直流电压。在起动时电流泵浦电路形成与直流电压不同的内部电压，内部电路在内部电压下工作。版权所有（C）2007，JPO＆INPIT

2. 发明专利

JP2008123074A Semiconductor integrated circuit 审中-公开
标题翻译：半导体集成电路
公开(公告)号：JP2008123074A
公开(公告)日：2008-05-29
申请号：JP2006303517
申请日：2006-11-09
申请人： Renesas Technology Corp , 株式会社ルネサステクノロジ
发明人： MATSUSHITA KOICHI , HARADA HIDEKAZU , KUWANO SHINICHI , UTSUNOMIYA HIROTO
IPC分类号： G06K19/07 , H01L21/822 , H01L27/04 , H03K3/037
摘要： PROBLEM TO BE SOLVED: To extend flag holding time with a smaller capacitance element by sharply decreasing a current leak. SOLUTION: A power supply maintenance part 5 comprises a diode 7 and a capacitance element 8 connected in series between internal power voltage and reference potential. In the diode 7, a P channel MOS transistor is connected to the diode, and internal power voltage VDD is supplied to a source terminal of the transistor, and a gate terminal, a bulk terminal of the transistor and one junction of a capacitor is connected to the drain terminal. When the internal power voltage VDD of rectifier circuit 2 stops supply, the leak of charge accumulated in the capacitance element 8 can be prevented, since it becomes reverse bias by PN junction formed of a drain and an N-WELL of the transistor. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：通过急剧减小电流泄漏来扩大具有较小电容元件的标志保持时间。解决方案：电源维护部件5包括在内部电源电压和参考电位之间串联连接的二极管7和电容元件8。在二极管7中，P沟道MOS晶体管连接到二极管，并且内部电源电压VDD被提供给晶体管的源极端子，并且栅极端子，晶体管的体积端子和电容器的一个结点被连接到漏极端子。当整流电路2的内部电源电压VDD停止供给时，可以防止累积在电容元件8中的电荷泄漏，因为由漏极和晶体管的N-WELL形成的PN结成为反向偏置。版权所有（C）2008，JPO＆INPIT

3. 发明专利

JP2008061218A Semiconductor integrated circuit device and receiving device 审中-公开
标题翻译：半导体集成电路器件和接收器件
公开(公告)号：JP2008061218A
公开(公告)日：2008-03-13
申请号：JP2007089313
申请日：2007-03-29
申请人： Renesas Technology Corp , 株式会社ルネサステクノロジ
发明人： ENDO TAKEFUMI , UTSUNOMIYA HIROTO , TAKANO AKIHIRO , IWATA SEIICHI , WATANABE KAZUYOSHI
IPC分类号： H04B1/04 , G06K17/00 , H04B1/30 , H04B1/59 , H04L27/04 , H04L27/06
CPC分类号： H04L27/04 , G06K7/0008
摘要： PROBLEM TO BE SOLVED: To provide a technique capable of reducing a circuit scale in a radio transceiver device such as an RFID reader-writer device. SOLUTION: The semiconductor integrated circuit device (IC) used for the transceiver such as the reader-writer in a UHF band electronic tag system is provided with an arithmetic unit 202 including a multiplier 208, an adder 209 and a register 207 between a baseband signal generating unit 201 and a DAC unit 203. In this way, an ASK modulation depth and a DC bias of an ASK modulation signal can be easily adjusted with a simple configuration. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供能够减少诸如RFID读写器设备的无线电收发器设备中的电路规模的技术。解决方案：用于诸如UHF频带电子标签系统中的读写器的收发器的半导体集成电路装置（IC）具有运算单元202，运算单元202包括乘法器208，加法器209和寄存器207，位于基带信号生成单元201和DAC单元203.这样，可以以简单的配置容易地调整ASK调制信号的ASK调制深度和DC偏置。版权所有（C）2008，JPO＆INPIT

4. 发明专利

JP2007133500A Semiconductor integrated circuit device 有权
标题翻译：半导体集成电路设备
公开(公告)号：JP2007133500A
公开(公告)日：2007-05-31
申请号：JP2005323833
申请日：2005-11-08
申请人： Renesas Technology Corp , 株式会社ルネサステクノロジ
发明人： UTSUNOMIYA HIROTO
IPC分类号： G06K19/07
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit device for RFID whose stable operation is achieved in simple configurations. SOLUTION: Propagated energy is input to an input terminal in the configurations of an electric signal. The input electric signal is rectified, and a DC voltage is generated, and a stabilizing voltage different from the DC voltage to be imposed on a voltage stabilization circuit is formed. The stabilizing voltage is transmitted through a resistance means to an internal circuit. The operating voltage of the internal circuit is set in a specific voltage according to voltage drop in the resistance means corresponding to the operating currents of the internal circuit. COPYRIGHT: (C)2007,JPO&INPIT

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