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JP2011216847A Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：JP2011216847A
公开(公告)日：2011-10-27
申请号：JP2010280431
申请日：2010-12-16
申请人： Renesas Electronics Corp , ルネサスエレクトロニクス株式会社
发明人： INOMATA HISAO
IPC分类号： H01L29/06 , H01L29/78
CPC分类号： H01L29/7813 , H01L29/0619 , H01L29/0634 , H01L29/0696 , H01L29/1095 , H01L29/402 , H01L29/7811
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device of an SJ structure having improved breakdown voltage and breakdown resistance.SOLUTION: The semiconductor device 1 includes a transistor element 200 formed on a semiconductor substrate 101, the transistor element having a parallel structure composed of a first conductive drift region 202 and a second conductive column region 205 and a second conductive base region 203. The parallel structure composed of the first conductive drift region 202 and the second conductive column regions 205 and a second conductive annular diffusion region 303 located on a side of the base region 203 to be separated therefrom are formed in an outer peripheral region 300X outside an element forming region. The annular diffusion region 303 has an innermost end 303A and a portion close thereto that are located on the column region 205, and an outermost end 303B that is located outside the outermost column region 205. A field insulating film 306 covering the annular diffusion region 303 is overlaid on a semiconductor layer 201 of the outer peripheral region 300X.
摘要翻译：要解决的问题：提供具有改进的击穿电压和耐击穿性的SJ结构的半导体器件。解决方案：半导体器件1包括形成在半导体衬底101上的晶体管元件200，该晶体管元件具有由第一导电漂移区域202和第二导电柱区域205以及第二导电基极区域203.由第一导电漂移区域202和第二导电柱区域205以及位于一侧的第二导电环形扩散区域303构成的并联结构在元件形成区域外侧的外周区域300X上形成有与基板区域203分离的基板区域203。环状扩散区域303具有位于列区域205上的最内端303A和靠近其的部分，以及位于最外侧列区域205外侧的最外端303B。覆盖环状扩散区域303的场绝缘膜306 覆盖在外周区域300X的半导体层201上。

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