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1. 发明专利

JP2014209446A 有機エレクトロルミネッセンス装置の製造方法审中-公开
标题翻译：用于生产有机电致发光器件的方法
公开(公告)号：JP2014209446A
公开(公告)日：2014-11-06
申请号：JP2014047130
申请日：2014-03-11
申请人：日東電工株式会社 , Nitto Denko Corp
发明人： OSAKI HIROISA , YAMAMOTO SATORU , KAWAMOTO YUSUKE , SOGA MASATSUGU
IPC分类号： H05B33/10 , B65H23/185 , H01L51/50 , H05B33/02 , H05B33/04
CPC分类号： H01L51/56 , B65H23/1825 , B65H23/185 , B65H2513/11 , B65H2515/31 , H01L51/5253 , B65H2220/01 , B65H2220/02
摘要：【課題】ロールツーロール方式を用いた製造方法であって、湾曲し難く且つ耐久性に優れた有機EL装置を製造する方法を提供する。【解決手段】ロールツーロール方式を用い、有機エレクトロルミネッセンス素子が形成された帯状の支持基板21に張力を加えながらその基板を長手方向に搬送する途中で、張力を加えながら搬送される帯状の封止基板5を、前記支持基板21上に貼着する工程を有し、前記支持基板21又は封止基板5の何れか一方の基板が、他方の基板よりも引張弾性率が大きく、前記工程において、前記引張弾性率の小さい基板に、170N/m以下の張力を加え、且つ、前記引張弾性率の大きい基板に、前記引張弾性率の小さい基板に加える張力よりも大きい張力を加える有機エレクトロルミネッセンス装置の製造方法。【選択図】図5
摘要翻译：要解决的问题：为了提供使用卷对卷系统制造有机电致发光器件的方法，有机电致发光器件几乎不弯曲，并且耐久性优异。解决方案：一种制造使用辊压式有机电致发光器件的有机电致发光器件的方法，卷绕系统包括以下步骤：在向基板施加张力的同时沿着长度方向输送其上形成有有机电致发光元件的带状支撑基板21的过程中，带状封装基板在支撑基板21上固定张力施加到基板的输送部5。另外，支承基板21或封装基板5中的一方的拉伸弹性模量比其他基板大。在该步骤中，拉伸弹性模量对基板施加170N / m以下的张力，并且对张力较小的弹性模量施加到施加到基板上的张力大的张力施加到基体具有较大的拉伸弹性模量。

2. 发明专利

JP2014007246A Radiation-heat-conduction-suppressing sheet 有权
标题翻译：辐射导热抑制片
公开(公告)号：JP2014007246A
公开(公告)日：2014-01-16
申请号：JP2012141184
申请日：2012-06-22
申请人： Nitto Denko Corp , 日東電工株式会社
发明人： HYODO TOMOKI , SOGA MASATSUGU , HIRAO AKIRA , KAWAMOTO YUSUKE , MAIKAWA HIDETOSHI
IPC分类号： H05K7/20
CPC分类号： B32B7/02 , B32B3/26 , B32B3/30 , B32B9/007 , B32B9/046 , B32B15/046 , B32B15/20 , B32B2266/0278 , B32B2266/06 , B32B2305/022 , B32B2307/302 , B32B2307/306 , B32B2307/542 , B32B2457/00 , H05K7/20472 , Y10T428/24942
摘要： PROBLEM TO BE SOLVED: To provide a radiation-heat-conduction-suppressing sheet which makes possible to suppress the rise in the temperature at the surface of a housing and to reduce the occurrence of a heat spot, and which is very easy to attach to the housing and is superior in the adhesion thereto.SOLUTION: The radiation-heat-conduction-suppressing sheet has a heat conduction-suppressing layer, and a heat conductive layer. The heat conduction-suppressing layer has a heat conductivity of 0.06 W/m K or smaller. The heat conductive layer has a far-infrared absorption rate of 0.6 or smaller at a wavelength of 7-10 μm, and a heat conductivity of 200 W/m K or larger. In use, the radiation-heat-conduction-suppressing sheet is fixed to a housing having therein an exothermic unit on its heat conduction-suppressing layer side in position so that the heat conductive layer is never put in close contact with the exothermic unit, but is opposed to a heat-radiation face thereof.
摘要翻译：要解决的问题：提供一种辐射热传导抑制片，其能够抑制壳体表面的温度上升并且减少发热点，并且其非常容易附着到壳体并且具有优异的附着力。解决方案：辐射热传导抑制片材具有热传导抑制层和导热层。热传导抑制层的导热率为0.06W / m·K以下。导热层的波长为7〜10μm的远红外线吸收率为0.6以下，导热率为200W / m·K以上。在使用中，辐射热传导抑制片在其热传导抑制层一侧固定在具有放热单元的壳体的位置，使得导热层不会与放热单元紧密接触，而与其热辐射面相反。

3. 发明专利

JP2014007247A Radiation-heat-conduction-suppressing sheet 审中-公开
标题翻译：辐射导热抑制片
公开(公告)号：JP2014007247A
公开(公告)日：2014-01-16
申请号：JP2012141185
申请日：2012-06-22
申请人： Nitto Denko Corp , 日東電工株式会社
发明人： HIRAO AKIRA , HYODO TOMOKI , SOGA MASATSUGU , KAWAMOTO YUSUKE , MAIKAWA HIDETOSHI
IPC分类号： H05K7/20
摘要： PROBLEM TO BE SOLVED: To provide a radiation-heat-conduction-suppressing sheet which makes possible to suppress the rise in the temperature at the surface of a housing and to reduce the occurrence of a heat spot, and which is very easy to attach to the housing.SOLUTION: The radiation-heat-conduction-suppressing sheet has a heat conductive layer, and an adhesive layer having a thickness of 100 μm or smaller. The heat conductive layer has a far-infrared absorption rate of 0.6 or smaller at a wavelength of 7-10 μm, and a heat conductivity of 200 W/m K or larger. In use, the radiation-heat-conduction-suppressing sheet is fixed to a housing having therein an exothermic unit on its heat conduction-suppressing layer side in position so that the heat conductive layer is never put in close contact with the exothermic unit, but is opposed to a heat-radiation face thereof.
摘要翻译：要解决的问题：提供一种辐射热传导抑制片，其能够抑制壳体表面的温度上升并且减少发热点，并且其非常容易附着到壳体。解决方案：辐射热传导抑制片材具有导热层和厚度为100μm以下的粘合剂层。导热层的波长为7〜10μm的远红外线吸收率为0.6以下，导热率为200W / m·K以上。在使用中，辐射热传导抑制片在其热传导抑制层一侧固定在具有放热单元的壳体的位置，使得导热层不会与放热单元紧密接触，而与其热辐射面相反。

4. 发明专利

JP2014103015A Organic electroluminescent device 审中-公开
标题翻译：有机电致发光器件
公开(公告)号：JP2014103015A
公开(公告)日：2014-06-05
申请号：JP2012254853
申请日：2012-11-21
申请人： Nitto Denko Corp , 日東電工株式会社
发明人： OSAKI HIROISA , KAWAMOTO YUSUKE , SOGA MASATSUGU , MURASHIGE TAKESHI , HATTORI DAISUKE , NAGASE JUNICHI
IPC分类号： H05B33/04 , H01L51/50 , H05B33/02
摘要： PROBLEM TO BE SOLVED: To provide an organic electroluminescent device which is hardly distorted even when used for a long period of time, is excellent in durability, and is stably driven.SOLUTION: An organic electroluminescent device 1 of the present invention has an element substrate 2, an organic electroluminescent element 3 provided on the element substrate 2, and a sealing plate 4 provided on the organic electroluminescent element 3. One of the element substrate 2 and the sealing plate 4 includes a metal foil, and the other of the element substrate 2 and the sealing plate 4 includes a glass plate. The absolute value of a difference between the linear expansion coefficient of the element substrate 2 and the linear expansion coefficient of the sealing plate 4 is 12 ppm/°C or less.
摘要翻译：要解决的问题：为了提供即使长时间使用也难以扭曲的有机电致发光元件，其耐久性优异，并被稳定地驱动。本发明的有机电致发光元件1具有元件基板 2，设置在元件基板2上的有机电致发光元件3和设置在有机电致发光元件3上的密封板4.元件基板2和密封板4中的一个包括金属箔，元件基板中的另一个 2，密封板4包括玻璃板。元件基板2的线膨胀系数与密封板4的线膨胀系数之差的绝对值为12ppm /℃以下。

5. 发明专利

JP2012033554A Film for flip-chip type semiconductor rear face, film for dicing tape integrated semiconductor rear face, method of manufacturing semiconductor device, and flip-chip type semiconductor device 有权
标题翻译：片状薄膜半导体后表面的薄膜，贴片半导体集成电路后面的薄膜，制造半导体器件的方法和芯片型半导体器件
公开(公告)号：JP2012033554A
公开(公告)日：2012-02-16
申请号：JP2010169501
申请日：2010-07-28
申请人： Nitto Denko Corp , 日東電工株式会社
发明人： KAWAMOTO YUSUKE , TAKAMOTO HISAHIDE , SHIGA GOSHI , ASAI FUMITERU
IPC分类号： H01L23/00 , B32B15/08 , H01L21/301
CPC分类号： H01L23/3157 , C09J163/00 , H01L21/563 , H01L21/6836 , H01L24/13 , H01L24/16 , H01L24/81 , H01L2221/68327 , H01L2221/68336 , H01L2221/68386 , H01L2224/131 , H01L2224/13111 , H01L2224/13144 , H01L2224/13147 , H01L2224/16225 , H01L2224/16227 , H01L2224/16245 , H01L2224/73204 , H01L2224/81007 , H01L2224/81191 , H01L2224/81203 , H01L2224/81815 , H01L2924/0001 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/0102 , H01L2924/01024 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01042 , H01L2924/01045 , H01L2924/01047 , H01L2924/0105 , H01L2924/01051 , H01L2924/01056 , H01L2924/01074 , H01L2924/01075 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/15787 , H01L2924/15788 , H01L2924/181 , Y10T428/31504 , H01L2924/00014 , H01L2924/01083 , H01L2224/13099 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a film for a flip-chip type semiconductor rear face capable of suppressing or preventing generation of warpage in a semiconductor element that is flip-chip bonded onto an adherend.SOLUTION: A film 2 for a flip-chip type semiconductor rear face is formed on a rear face of a semiconductor element that is flip-chip bonded onto an adherend. A volume shrinkage rate in a range of 23-165°C in thermal hardening of the film 2 for a flip-chip type semiconductor rear face before thermal hardening, is 100 ppm/°C or higher and 400 ppm/°C or lower.
摘要翻译：要解决的问题：提供一种用于倒装芯片型半导体后表面的膜，其能够抑制或防止在倒装芯片上粘合到被粘物上的半导体元件中产生翘曲。解决方案：用于倒装芯片型半导体后表面的膜2形成在倒装芯片粘合到被粘物上的半导体元件的背面上。在热硬化之前的倒装芯片型半导体背面的膜2的热硬化中，在23-165℃的范围内的体积收缩率为100ppm /℃以上且400ppm /℃以下。版权所有（C）2012，JPO＆INPIT

6. 发明专利

JP2013149952A Semiconductor device, optical semiconductor device and heat dissipation member 有权
标题翻译：半导体器件，光学半导体器件和散热器件
公开(公告)号：JP2013149952A
公开(公告)日：2013-08-01
申请号：JP2012265191
申请日：2012-12-04
申请人： Nitto Denko Corp , 日東電工株式会社
发明人： TERADA YOSHIO , KAWAMOTO YUSUKE , FURUTA KENJI , TOJO MIDORI , NAKAYAMA JUNICHI
IPC分类号： H01L23/373 , H01L23/36 , H01L33/64
CPC分类号： C09J133/066 , C08F222/1006 , H01L23/3737 , H01L23/4006 , H01L33/64 , H01L2924/0002 , H01L2933/0075 , C08F2220/1858 , C08F2220/281 , C08F226/08 , C08F220/58 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide an optical semiconductor device including a semiconductor device which can effectively prevent uplift of a mounting substrate and a heat dissipation member; and provide a heat dissipation member used for the semiconductor device and the optical semiconductor device.SOLUTION: An optical semiconductor device 5 comprises: an optical semiconductor mounting substrate 6 on which an optical semiconductor element 8 is mounted; a heat sink 7 arranged at a distance from the optical semiconductor mounting substrate 6 in an opposed manner; and an adhesive heat dissipation sheet 1 which is sandwiched between the optical semiconductor mounting substrate 6 and the heat sink 7, and which adheres to the optical semiconductor mounting substrate 6 and the heat sink 7. The adhesive heat dissipation sheet has an interchuck distance of 20 mm, a tensile rate of 300 mm/min and tensile elasticity measured at 23°C of 600 MPa and under.
摘要翻译：要解决的问题：提供一种包括可以有效防止安装基板和散热构件的隆起的半导体装置的光学半导体装置; 并提供用于半导体器件和光学半导体器件的散热构件。解决方案：光学半导体器件5包括：安装有光学半导体元件8的光学半导体安装基板6; 以相对的方式与光半导体安装基板6一定距离配置的散热器7; 以及夹在光半导体安装基板6和散热器7之间并附着于光半导体安装基板6和散热片7的粘合性散热片1。粘合散热片的间隙距离为20 mm，拉伸速度为300mm / min，在23℃下测定的拉伸弹性为600MPa以下。

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