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    • 4. 发明专利
    • Mirror element
    • 镜子元素
    • JP2007248809A
    • 2007-09-27
    • JP2006072212
    • 2006-03-16
    • Nippon Telegr & Teleph Corp 日本電信電話株式会社
    • SHIMOKAWA FUSAOUCHIYAMA SHINGOMAKIHARA MITSUHIRO
    • G02B26/08G02B26/10
    • PROBLEM TO BE SOLVED: To more strongly bond an electrode substrate and a mirror substrate.
      SOLUTION: On the electrode substrate 300 (mirror element) shown in Fig.1 as an example, rib structural bodies 310 are formed at the parts between vertically adjacent element regions (inter-element regions) other than wiring regions in which electrodes or the like are provided. Focusing on one element region, the rib structural bodies 310 are formed outside the wiring regions surrounding the element region. Further, on the electrode substrate 300, a supporting walls 101 having the same height as that of the rib structural bodies 310 are formed (fixed) separately from the electrode substrate 300 in the peripheral regions (inter-element regions) of the respective element regions, in which the rib structural bodies 310 are not provided. The upper face of the supporting walls 101 and the upper face of the rib structural bodies 310 are arranged on the same plane.
      COPYRIGHT: (C)2007,JPO&INPIT
    • 要解决的问题:更牢固地结合电极基板和反射镜基板。 解决方案:在图1所示的电极基板300(反射镜元件)为例,肋结构体310形成在布线区域之外的垂直相邻的元件区域(元件间区域)之间的部分,其中电极 或类似物。 聚焦在一个元件区域上,肋结构体310形成在围绕元件区域的布线区域的外部。 此外,在电极基板300上,在各个元件区域的周边区域(元件间区域)中,与电极基板300分开地形成(固定)具有与肋结构体310相同高度的支撑壁101 ,其中不设置肋结构体310。 支撑壁101的上表面和肋结构体310的上表面布置在同一平面上。 版权所有(C)2007,JPO&INPIT
    • 5. 发明专利
    • Semiconductor device and its manufacturing method
    • 半导体器件及其制造方法
    • JP2005228803A
    • 2005-08-25
    • JP2004033630
    • 2004-02-10
    • Nippon Telegr & Teleph Corp Shindengen Electric Mfg Co Ltd新電元工業株式会社日本電信電話株式会社
    • SHIMIZU TAKASHISHIMOKAWA FUSAOMAKIHARA MITSUHIROSATO MAKOTOYODOGAWA HIROYUKIYAMAZAKI TAKESHI
    • H01L21/3065
    • PROBLEM TO BE SOLVED: To provide a semiconductor device that can suppress the reduction of pattern size of a polyimide film by etching and hardly changes device characteristics through processing; and to provide its manufacturing method.
      SOLUTION: A polyimide is deposited on a semiconductor substrate 2 by spin coating so as to form a polyimide film 1. Next, an SiO
      2 is deposited on the polyimide film 1 through CVD to form an SiO
      2 film 3. The SiO
      2 film 3 is subjected to patterning, and while the SiO
      2 film 3 is used as a mask, the polyimide film 1 is dry-etched by a plasma 4 using O
      2 . A thin SiO
      2 film is deposited on the semiconductor substrate 2 including the polyimide film 1 through CVD, and a conductive film 5 as a material for a heater is deposited thereon by vacuum vapor deposition method or sputtering method. When the conductive film 5 is patterned by dry etching, an optional structure can be obtained.
      COPYRIGHT: (C)2005,JPO&NCIPI
    • 解决的问题:提供能够通过蚀刻抑制聚酰亚胺膜的图案尺寸的降低的半导体装置,并且通过加工几乎不改变装置特性; 并提供其制造方法。 解决方案:通过旋涂将聚酰亚胺沉积在半导体衬底2上以形成聚酰亚胺膜1.接下来,通过CVD在聚酰亚胺膜1上沉积SiO 2 ,以形成 SiO 2 膜3.将SiO 2 膜3进行图案化,而当使用SiO 2 SB 3膜作为掩模时, 聚酰亚胺薄膜1用等离子体4使用O SB SB2进行干式蚀刻。 通过CVD将包括薄膜1的薄SiO 2薄膜沉积在包含聚酰亚胺薄膜1的半导体衬底2上,通过真空气相沉积法或溅射法沉积作为加热器材料的导电膜5。 当通过干蚀刻图案化导电膜5时,可以获得任选的结构。 版权所有(C)2005,JPO&NCIPI
    • 8. 发明专利
    • Micromirror element
    • MICROMIRROR元素
    • JP2009282467A
    • 2009-12-03
    • JP2008137116
    • 2008-05-26
    • Nippon Telegr & Teleph Corp 日本電信電話株式会社
    • UCHIYAMA SHINGOSHIMOKAWA FUSAO
    • G02B26/08B81B3/00
    • PROBLEM TO BE SOLVED: To easily obtain a state that a mirror turnably provided in a mirror substrate and an electrode provided in an electrode substrate are adjacent to each other, with high positional (pitch) accuracy.
      SOLUTION: A micromirror element includes: a support substrate 101; the mirror substrate 102, supported by a support section (a frame section 126) above the support substrate 101, and having the turnable mirror 125; and the electrode substrate 103, having a control electrode section 132 disposed so as to face the mirror 125, and fixed on the support substrate 101 under the mirror substrate 102.
      COPYRIGHT: (C)2010,JPO&INPIT
    • 要解决的问题:为了容易地获得在镜面基板中设置的反射镜和设置在电极基板中的电极彼此相邻的位置(间距)精度的状态。 解决方案:微镜元件包括:支撑基板101; 镜基板102由支撑基板101上方的支撑部(框架部126)支撑,并具有可转动反射镜125; 以及电极基板103,其具有设置成面向反射镜125的控制电极部132,并且在反射镜基板102的下方固定在支撑基板101上。版权所有(C)2010,JPO&INPIT
    • 9. 发明专利
    • Method for forming mirror substrate
    • 形成镜面基板的方法
    • JP2006201541A
    • 2006-08-03
    • JP2005013740
    • 2005-01-21
    • Nippon Telegr & Teleph Corp 日本電信電話株式会社
    • SHIMOKAWA FUSAOYAMAGUCHI JOJIUCHIYAMA SHINGOSATO MAKOTO
    • G02B26/08G02B26/10
    • PROBLEM TO BE SOLVED: To form a metallic film more accurately and selectively for a mirror formed on a mirror substrate having a large level difference such as a frame part.
      SOLUTION: With a stencil mask 107 arranged on the frame part 101a, the vapor-deposited atoms 110 flying from a vapor deposition source through an opening 171 are made to reach the mirror 135, making a condition with a metallic film 108 formed only on the mirror 135. The stencil mask 107 is equipped, on a planar substrate 172, with an engaging part 173 that fits to the opening of the frame part 101a, wherein the opening 171 is formed on the tip end face 174 of the engaging part 173. The engaging part 173 corresponds to one part of the mirror 135 constituting a mirror array, with one circular opening 171 provided for each mirror. The tip end face 174 having the opening 171 is formed nearly in parallel to the flat face of the substrate 172.
      COPYRIGHT: (C)2006,JPO&NCIPI
    • 要解决的问题:为形成在诸如框架部分的具有大水平差的镜面基板上的反射镜更精确和选择地形成金属膜。 解决方案:通过布置在框架部分101a上的模板掩模107,使从气相沉积源通过开口171飞行的气相沉积原子110到达反射镜135,从而形成金属膜108的状态 模板掩模107在平面基板172上配备有与框架部分101a的开口配合的接合部分173,其中开口171形成在接合部分的顶端面174上 部分173。接合部分173对应于构成反射镜阵列的反射镜135的一部分,为每个反射镜提供一个圆形开口171。 具有开口171的末端面174大致平行于基板172的平面形成。版权所有(C)2006,JPO&NCIPI