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1. 发明专利

JP2005311269A Light-emitting element with lens 有权
标题翻译：带镜头的发光元件
公开(公告)号：JP2005311269A
公开(公告)日：2005-11-04
申请号：JP2004166560
申请日：2004-06-04
申请人： Nippon Sheet Glass Co Ltd , 日本板硝子株式会社
发明人： HAMANAKA KENJIRO , HASHIMOTO TAKAHIRO , NAGATA HIDESHI , ONO SEIJI , MURAGUCHI ISAO , KOMABA NOBUYUKI
IPC分类号： G02B3/00 , H01L33/08 , H01L33/30 , H01L33/44 , H01L33/58 , H01L33/00
摘要： PROBLEM TO BE SOLVED: To improve the light utilization efficiency of a light-emitting element having a lens.
SOLUTION: A compound lens 30 is provided on an almost U-shaped light emitting unit 22 of a light-emitting element. When the maximal positions of a light emission intensity of the almost U-shaped light emitting unit 22 are connected, a polygonal line 32 is formed. Parts of four spherical lenses 43, 44, 45, 46, having their centers positioned at respective both ends of three line segments of this polygonal line 32, are provided, and parts of three cylindrical lenses 48, 50, 52 having axes parallel to the respective three line segments are provided in their intermediate portions to form the compound lens 30, by adjacently disposing them to each another. In addition, the light emitting element is provided with an antireflection film for covering the light-emitting unit 22, and the compound lens 30 is provided on a surface of the antireflection film.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提高具有透镜的发光元件的光利用效率。解决方案：复合透镜30设置在发光元件的大致U形发光单元22上。当连接大致U字形发光单元22的发光强度的最大位置时，形成折线32。设有四个球面透镜43,44,45,46，其中心位于该折线32的三个线段的相应两端，并且具有平行于该多边形线32的轴线的三个柱面透镜48,50,52的部分在它们的中间部分设置相应的三个线段，以通过将它们相互放置而形成复合透镜30。此外，发光元件设置有用于覆盖发光单元22的防反射膜，并且复合透镜30设置在防反射膜的表面上。版权所有（C）2006，JPO＆NCIPI

2. 发明专利

JP2003289152A Compound semiconductor epitaxial growth film and structure of compound semiconductor film 有权
标题翻译：化合物半导体外延生长膜和化合物半导体膜的结构
公开(公告)号：JP2003289152A
公开(公告)日：2003-10-10
申请号：JP2002091313
申请日：2002-03-28
申请人： Nippon Sheet Glass Co Ltd , 日本板硝子株式会社
发明人： NAGATA HISAO , ARIMA YASUTOMO , KOMABA NOBUYUKI
IPC分类号： H01L21/205 , H01L21/20 , H01L27/14 , H01L29/167 , H01L31/06 , H01L31/10
CPC分类号： H01L31/105 , H01L31/184 , H01L31/1844 , Y02E10/544
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor epitaxial growth film in which the defect density in a compound semiconductor crystal film is reduced when the compound semiconductor crystal is grown.
SOLUTION: On an n-type InP substrate 10, the crystal film constituted of an n-type InP buffer layer 12, an undoped InGaAs optical absorption layer 14, and an n-type InP cap layer 16 is grown by a MOCVD method. In the InGaAs optical absorption layer 14, a composition rate is periodically changed based on a lattice matching condition of ±2%, namely between In
0.54 Ga
0.46 As and In
0.52 Ga
0.48 As every 80 nm in the thickness direction.
COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：提供当化合物半导体晶体生长时化合物半导体晶体膜中的缺陷密度降低的半导体外延生长膜。解决方案：在n型InP衬底10上，通过MOCVD生长由n型InP缓冲层12，未掺杂的InGaAs光吸收层14和n型InP帽层16构成的晶体膜方法。在InGaAs光吸收层14中，基于±2％的晶格匹配条件，即In 0.54 Ga 0.46 As和In 0.52 Ga 0.48 厚度方向每80nm。版权所有（C）2004，JPO

3. 发明专利

JP2007129033A Avalanche photodiode and manufacturing method thereof 审中-公开
标题翻译： AVALANCHE光电及其制造方法
公开(公告)号：JP2007129033A
公开(公告)日：2007-05-24
申请号：JP2005319708
申请日：2005-11-02
申请人： Nippon Sheet Glass Co Ltd , 日本板硝子株式会社
发明人： NAGATA HISAO , KOMABA NOBUYUKI
IPC分类号： H01L31/107
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing method of avalanche photodiode that can manufacture a guard-ring structure, using the simplified processes. SOLUTION: A diffusion control layer 24 is provided to a part of an aperture 28 of a diffusing mask 26 in a process of form p-n junction with diffusion. Zn is diffused into a window layer 20 via the diffusion mask to simultaneously form a photosensitive portion and the guard ring. When diffusion coefficients are almost equal in the diffusion control layer and window layer, thickness corresponding to the thickness of diffusion control layer simply becomes equal to the difference in depth at the diffusion front. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供可以使用简化的工艺制造防护环结构的雪崩光电二极管的制造方法。解决方案：扩散控制层24在扩散形成p-n结的过程中提供给扩散掩模26的孔28的一部分。 Zn经由扩散掩模扩散到窗口层20中，以同时形成光敏部分和保护环。当扩散控制层和窗口层中的扩散系数几乎相等时，对应于扩散控制层的厚度的厚度简单地等于扩散前沿的深度差。版权所有（C）2007，JPO＆INPIT

4. 发明专利

JP2006058488A Illumination optical device and projection type display device using the same 审中-公开
标题翻译：照明光学装置和使用其的投影型显示装置
公开(公告)号：JP2006058488A
公开(公告)日：2006-03-02
申请号：JP2004238801
申请日：2004-08-18
申请人： Nippon Sheet Glass Co Ltd , 日本板硝子株式会社
发明人： AZUMA HIDEKI , KOMABA NOBUYUKI , HAMANAKA KENJIRO
IPC分类号： G03B21/14 , G02B19/00 , G02B27/09 , G03B21/00
摘要： PROBLEM TO BE SOLVED: To provide an illumination optical device whose light quantity is very large and whose illuminance irregularity is small in using a light emitting element array such as an LED array as a light source, and to provide a projection type display device using the same.
SOLUTION: In the illumination optical device 10, the surface to be irradiated 30 being the incident surface of a liquid crystal panel 80 is irradiated with emitted light from the respective LEDs 21 of the LED array 20 through two microlens arrays 50 and 60 and a condenser lens 70. An LED array surface 22 and the principal surface of the microlens array 60 have nearly conjugate relation, and the principal surface of the microlens array 50 and the surface to be irradiated 30 have conjugate relation. The LED array surface 22 and the surface to be irradiated 30 do not have conjugate relation. By adopting an optical system where the LED array surface 22 and the surface to be irradiated 30 do not have conjugate relation, three design parameters on a light quantity transmission rate, the illuminance irregularity and the parallelism of illuminating light are easily optimized with good balance.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：解决的问题：为了提供使用诸如LED阵列的发光元件阵列作为光源的光量非常大并且其照度不规则性小的照明光学装置，并且提供投影型显示器设备使用相同。解决方案：在照明光学装置10中，作为液晶面板80的入射表面的被照射的表面30，通过两个微透镜阵列50和60照射来自LED阵列20的各个LED 21的发射光 LED阵列表面22和微透镜阵列60的主表面几乎具有共轭关系，微透镜阵列50的主表面和待照射表面30的主表面具有共轭关系。 LED阵列表面22和被照射的表面30不具有共轭关系。通过采用LED阵列表面22和被照射面30的光学系统不具有共轭关系的光学系统，能够容易地优化光量透射率，照度不均匀性和照明光的平行度的三个设计参数。版权所有（C）2006，JPO＆NCIPI

5. 发明专利

JP2004327886A Semiconductor photo-receiving element 审中-公开
公开(公告)号：JP2004327886A
公开(公告)日：2004-11-18
申请号：JP2003123261
申请日：2003-04-28
申请人： Nippon Sheet Glass Co Ltd , 日本板硝子株式会社
发明人： KOMABA NOBUYUKI
IPC分类号： H01L31/10
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor photo-receiving element which allows improvement of photo-sensitivity and increase of photo-response rate which are contradictory each other.
SOLUTION: An n-type InP buffer layer 22, a reflector layer 23, an i-type InGaAs photo-absorption layer 24, and an n-type InP cap layer 28 are laminated on an n-type InP substrate, and zinc(Zn) is diffused in the n-type InP cap layer 28 to form a p-type diffusion region 32 as a photo-receiving portion. The reflector layer 23 is formed of a laminated structure where 16 to 22 pairs of InP and AlGaInAs are laminated. The light passing through the i-type InGaAs photo-absorption layer 24, in light incident from the p-type diffusion region 32, is reflected to the i-type InGaAs photo-absorption 24 by the reflector layer 23, and a film thickness of the i-type InGaAs photo-absorption layer 24 may increase in appearance. Since carriers, produced in the i-type InGaAs photo-absorption layer 24, pass through the reflector layer 23 as it is, an effect on a photo-response rate does not occur.
COPYRIGHT: (C)2005,JPO&NCIPI

6. 发明专利

JPH05251352A 失效
公开(公告)号：JPH05251352A
公开(公告)日：1993-09-28
申请号：JP8077391
申请日：1991-03-19
申请人： HIKARI GIJUTSU KENKYU KAIHATSU , NIPPON SHEET GLASS CO LTD
发明人： NAGATA HISAO , KOMABA NOBUYUKI
IPC分类号： C30B25/00 , H01L21/203 , H01L21/205
摘要： PURPOSE:To manufacture a semiconductor quantum-well box without performing an electron-beam exposure process and an etching process by a method wherein the initial process of a crystal growth operation is utilized, by an MOVPE method or the like, in a substrate in which a laminar single-crystal film cannot be formed by an epitaxial growth operation. CONSTITUTION:The gas raw material of a compound semiconductor is supplied, under the same growth condition as the condition of an epitaxial growth operation, to a substrate 10 in which a laminar single-crystal film by the compound semiconductor cannot be formed by an epitaxial growth operation. The supply amount of the raw material of the compound semiconductor is set to an amount which forms a film thickness of 30nm or lower when it is grown by using the substrate 10 whose raw-material adhesion ratio mu is 1. The mu in this case is a rate at which the raw material which has been adsorbed participates in a growth operation. When mu=1, the whole of the raw material which has been adsorbed participates in a crystal growth operation. When mu=0, this means that no crystal growth operation is performed even when the raw material is absorbed by the substrate.

7. 发明专利

JPH0563305A MANUFACTURING METHOD OF SEMICONDUCTOR QUANTUM WELL CASE 失效
公开(公告)号：JPH0563305A
公开(公告)日：1993-03-12
申请号：JP8605091
申请日：1991-03-26
申请人： HIKARI GIJUTSU KENKYU KAIHATSU , NIPPON SHEET GLASS CO LTD
发明人： NAGATA HISAO , KOMABA NOBUYUKI
IPC分类号： H01L21/203 , H01S5/00
摘要： PURPOSE:To enable the etching step, etc., to be eliminated by a method wherein MOVPE process etc., is utilized for the initial crystal growing process on a substrate not to form a laminar single crystal film in the epitaxial growing step. CONSTITUTION:The title manufacturing method of quantum well case utilizing MOVPE process is described as follows. That is, when a III group material, e.g. trimethylgallium(TMG), etc., is fed to a heated substrate 10, the material is cracked on the substrate 10 to produce Ga atoms sucking at the substrate 10 if the substrate 10 temperature exceeds the cracking temperature of the organic metal. However, when the wettability of liquid Ga to the substrate 10 is inferior and the feed of Ga material to the substrate 10 runs short, Ga is formed into droplets (islands) on the substrate 10. Furthermore, when As material 11 is fed to the substrate 10 having such islands, the As atoms are diffused in the islands so as to be GaAs 11 crystallized. At this time, the total feed of organic gallium compound shall not exceed the feed by which the mean film thickness of the metallic film formed of the Ga material on the substrate 10 may be made to attain to 50mum.

8. 发明专利

JP2001189526A SELF-SCANNING TYPE SURFACE EMISSION LASER ARRAY 失效
公开(公告)号：JP2001189526A
公开(公告)日：2001-07-10
申请号：JP2000000349
申请日：2000-01-05
申请人： NIPPON SHEET GLASS CO LTD
发明人： TAGAMI TAKASHI , TAKEUCHI KENICHIRO , KUSUDA YUKIHISA , ONO SEIJI , KOMABA NOBUYUKI
IPC分类号： H01S5/183 , H01S5/323
摘要： PROBLEM TO BE SOLVED: To provide a surface emission laser array in which wire bonding connecting a driver circuit and a VCSEL is made unnecessary and high definition, compacting and the reduction of cost are enabled. SOLUTION: A thyristor type VCSEL 2 having an N-P-N-P structure has a structure in which a tyristor having the N-P-N-P structure is held by N-type and P-type Bragg reflectors (DBR) 26, 28. The gate layers (P-type layers) 30 of the thyristors are connected to power-supply voltage VGA through load resistors RL, and sections among the gate layers of each thyristor are connected by diodes D. The cathodes (N-type layers) 31 of the thyristors are connected to clock lines ϕ1, ϕ2 at every one element through the N-type DBR layer 26.

9. 发明专利

JP2001119004A LIGHT-RECEIVING ELEMENT ARRAY CHIP 失效
公开(公告)号：JP2001119004A
公开(公告)日：2001-04-27
申请号：JP29492999
申请日：1999-10-18
申请人： NIPPON SHEET GLASS CO LTD
发明人： KOMABA NOBUYUKI , TAGAMI TAKASHI , KUSUDA YUKIHISA
IPC分类号： H01L31/10 , H01L27/14
摘要： PROBLEM TO BE SOLVED: To provide a light-receiving element array chip, in which the size and the pitch of the light-receiving element array can be miniaturized and the chip size per the number of the light-receiving elements can be miniaturized. SOLUTION: On the side of a light-receiving element array, eight pieces of light-receiving elements are arranged in a single block, and a bonding pad Bi to which an n-type electrode 42 of each light-receiving element is commonly connected is formed. If the number of the light-receiving elements is 128, i=1-16, whereas wiring Lj (j=1 to 8) to which p-type electrodes 40 of the light-receiving elements of the eight pieces are connected and eight bonding pads B(Lj) that are connected to the respective wiring are formed. The light-receiving-element array is of a mesa structure.

10. 发明专利

JP2002100796A PHOTODETECTION ELEMENT ARRAY 失效
公开(公告)号：JP2002100796A
公开(公告)日：2002-04-05
申请号：JP2001119872
申请日：2001-04-18
申请人： NIPPON SHEET GLASS CO LTD
发明人： KOMABA NOBUYUKI , TAGAMI TAKASHI , ARIMA YASUTOMO , KUSUDA YUKIHISA
IPC分类号： H01L31/10
摘要： PROBLEM TO BE SOLVED: To provide a photodetection element array which can prevent the characteristics of the photodetecting elements from deteriorating due to crosstalks and stray lights. SOLUTION: A pin photodiode is formed by laminating an n-InP layer 22, an I-InGaAs layer 24, and an n-InP layer 26 on an n-InP substrate 20 and forming p-type diffusion areas 28 by diffusing Zn in the n-InP layer 26. On this structure, an insulating film 30 is formed to a thickness satisfying nonreflection conditions. On this insulating film 30, light-shielding layers 32 are provided to cover the parts between the photodetecting elements.

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