专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

JP2008214126A Method for manufacturing semiconductor crystal 有权
标题翻译：制造半导体晶体的方法
公开(公告)号：JP2008214126A
公开(公告)日：2008-09-18
申请号：JP2007053321
申请日：2007-03-02
申请人： Ngk Insulators Ltd , Osaka Univ , Toyoda Gosei Co Ltd , 国立大学法人大阪大学 , 日本碍子株式会社 , 豊田合成株式会社
发明人： NAGAI SEIJI , YAMAZAKI SHIRO , SATO TOSHIYUKI , IWAI MAKOTO , IMAI KATSUHIRO , MORI YUSUKE , SASAKI TAKATOMO , KAWAMURA SHIRO
IPC分类号： C30B29/38 , C30B9/00 , H01L21/208
CPC分类号： C30B29/403 , C30B9/00 , C30B9/10
摘要： PROBLEM TO BE SOLVED: To improve the crystallinity and uniformity of a semiconductor crystal and increase effectively its yield, in a flux method, so as to become higher than those of conventional methods.
SOLUTION: The c axis of a seed crystal 10 having GaN single crystal layer is oriented to a horizontal direction (y axis direction), one of the a axes of the seed crystal 10 is oriented to a vertical direction and one of the m axes is oriented to an x axis direction. Resultingly, all of the points p1, p2 and p3 on a clamper T contact the m-plane of the seed crystal. The clamper T has clamping members T1 and T2, where both of them extend vertically but the clamping member T1 has an end portion T1a tilted by 30° to the upper surface α of a growth source solution. The reason why the seed crystal is held at the m-plane is that the m-plane has a crystal growth speed slower than that of the a-plane and the desired c-plane growth is not hindered. The seed crystals 10 and the clampers T are plurally arranged periodically to the y-axis direction respectively.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：为了提高半导体晶体的结晶度和均匀性，并且在助熔剂方法中有效地提高其产率，从而变得高于常规方法。＆lt;解决方案＆gt;具有GaN单晶层的晶种10的c轴取向为水平方向（y轴方向），晶种10的a轴之一取向为垂直方向， m轴取向为x轴方向。因此，夹持器T上的所有点p1，p2和p3接触晶种的m面。夹持器T具有夹紧构件T1和T2，其中它们都垂直延伸，但是夹紧构件T1具有相对于生长源溶液的上表面α倾斜30°的端部T1a。晶种保持在m面的原因是m面的晶体生长速度比a平面慢，并且所希望的c面生长不受阻碍。种子晶体10和夹持器T分别周期性地设置在y轴方向。版权所有（C）2008，JPO＆INPIT

2. 发明专利

JP2008254999A Crystal growing apparatus 有权
标题翻译：水晶生长装置
公开(公告)号：JP2008254999A
公开(公告)日：2008-10-23
申请号：JP2008029035
申请日：2008-02-08
申请人： Yusuke Mori , Ngk Insulators Ltd , Toyoda Gosei Co Ltd , 日本碍子株式会社 , 勇介森 , 豊田合成株式会社
发明人： YAMAZAKI SHIRO , HIRATA KOJI , SATO TOSHIYUKI , NAGAI SEIJI , IMAI KATSUHIRO , IWAI MAKOTO , HIGASHIHARA SHUHEI , SASAKI TAKATOMO , MORI YUSUKE , KAWAMURA SHIRO
IPC分类号： C30B29/38 , C30B19/02
摘要： PROBLEM TO BE SOLVED: To provide a flux method with an improved work efficiency while maintaining the purity of flux at a high level and saving the flux material cost.
SOLUTION: A sodium (Na) purifying apparatus 130 includes an apparatus 140 for holding and managing Na that keeps purified Na in a liquid state. Liquid Na is supplied to the apparatus 140 for holding and managing Na through a liquid Na supply tube 139 which is kept at 100°C. The apparatus 140 for holding and managing Na has an Ar gas purifying apparatus 141 that controls the condition of argon (Ar) gas which fills the internal space thereof. Thus, by turning a faucet 121 on and off at a desired timing, the purified liquid Na supplied from the Na purifying apparatus 130 can be introduced into a crucible c at will via the liquid Na supply tube 139, the apparatus 140 for holding and managing Na and piping 149.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供具有提高的工作效率的助焊剂方法，同时将焊剂的纯度保持在高水平并且节省焊剂材料成本。解决方案：钠（Na）纯化装置130包括用于保持和管理保持纯化的Na处于液态的Na的装置140。液体Na被供给到用于通过保持在100℃的液体Na供应管139保持和管理Na的装置140。用于保持和管理Na的装置140具有控制填充其内部空间的氩（Ar）气体的状态的Ar气体净化装置141。因此，通过在期望的时刻打开和关闭水龙头121，可以从Na净化装置130供应的净化液体Na经由液体Na供给管139，用于保持和管理的装置140被引入坩埚c Na和管道149.版权所有（C）2009，JPO＆INPIT

3. 发明专利

JP2008290929A Method for producing group iii nitride-based compound semiconductor 有权
标题翻译：生产III族氮化物化合物半导体的方法
公开(公告)号：JP2008290929A
公开(公告)日：2008-12-04
申请号：JP2008038980
申请日：2008-02-20
申请人： Ngk Insulators Ltd , Toyoda Gosei Co Ltd , 日本碍子株式会社 , 豊田合成株式会社
发明人： YAMAZAKI SHIRO , NAGAI SEIJI , SATO TOSHIYUKI , IWAI MAKOTO , IMAI KATSUHIRO , SASAKI TAKATOMO , MORI YUSUKE , KAWAMURA SHIRO
IPC分类号： C30B29/38 , C30B19/06 , H01L33/32 , H01S5/323
摘要： PROBLEM TO BE SOLVED: To provide a method by which deposition of miscellaneous crystals on the nitrogen-face of a GaN self-standing substrate and waste of raw materials are prevented, in the production of GaN through a flux method. SOLUTION: Four arrangements of crucibles 26-1-4 and a GaN self-standing substrate are exemplified. In Fig. 1 A, a nitrogen-face of a self-standing substrate 10 comes into close contact with a sloped flat inner wall of a crucible 26-1. In Fig. 1 B, a nitrogen-face of a self-standing substrate 10 comes into close contact with a horizontally facing flat inner wall of a crucible 26-2, and the substrate is fixed by means of a fixture ST-2. In Fig. 1 C, a fixture ST-3 is provided on a flat bottom of a crucible 26-3, and two GaN self-standing substrates 10-1, 10-2 are fixed by means of the fixture ST-3 so that the nitrogen-faces of the substrates come into close contact with each other. In Fig. 1 D, a fixture ST-4 is provided on a flat bottom of a crucible 26-4, and a GaN self-standing substrate 10 is fixed on the fixture so that the nitrogen-face of the substrate 10 is covered with the fixture. A flux mixture of molten gallium and sodium is charged into each crucible, and a GaN single crystal is grown on the gallium-face F Ga under pressurized nitrogen. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供通过通过焊剂法制造GaN的方法，其通过在GaN自支撑衬底的氮面上沉积杂晶并防止原料的浪费。解决方案：示例了坩埚26-1-4和GaN自立衬底的四种布置。在图如图1A所示，自立基板10的氮面与坩埚26-1的倾斜的平坦的内壁紧密接触。在图如图1B所示，自立基板10的氮面与坩埚26-2的水平面平坦的内壁紧密接触，并且基板通过固定件ST-2固定。在图如图1C所示，在坩埚26-3的平坦底部设置固定件ST-3，借助于固定件ST-3固定两个GaN自立基板10-1,10-2，基板的表面彼此紧密接触。在图如图1D所示，在坩埚26-4的平坦底部设置固定件ST-4，将固定在固定装置上的GaN自立基板10固定在基板10的氮面上。将熔融的镓和钠的助熔剂混合物装入每个坩埚中，并且在加压氮气下在镓面F Ga 上生长GaN单晶。版权所有（C）2009，JPO＆INPIT

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式