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1. 发明专利

JP2571130B2 失效
公开(公告)号：JP2571130B2
公开(公告)日：1997-01-16
申请号：JP24392489
申请日：1989-09-20
申请人： NIPPON ZEON CO
发明人： OIE MASAYUKI , KAWADA MASAJI , YAMADA TAKAMASA
IPC分类号： G03F7/022 , G03F7/004 , G03F7/039 , H01L21/027 , H01L21/30

2. 发明专利

JPH0777799A RESIST COMPOSITION 失效
公开(公告)号：JPH0777799A
公开(公告)日：1995-03-20
申请号：JP31252693
申请日：1993-11-18
申请人： NIPPON ZEON CO
发明人： OIE MASAYUKI , ABE NOBUNORI
IPC分类号： G03F7/022 , G03F7/023 , G03F7/028 , G03F7/033 , G03F7/039 , H01L21/027
摘要： PURPOSE:To provide the resist material superior in resist characteristics, such as sensitivity, resolution, etching resistance, and storage stability. CONSTITUTION:This resist composition is characterized by containing a 1,2- naphthoquinonediazido compound and a copolymer having in a molecular chain, structural units represented by formula I and II in which each of R and R is, independently, H, optionally substituted 1-5C alkyl, halogen, or cyano; R is a linear or cyclic acetal group, carbonate, or -OR ; R is H, optionally substituted 1-5C alkyl, halogen, or cyano: and R is optionally substituted 5-16 cyclic alkyl.

3. 发明专利

JPH06118650A RESIST COMPOSITION 失效
公开(公告)号：JPH06118650A
公开(公告)日：1994-04-28
申请号：JP28518792
申请日：1992-09-30
申请人： NIPPON ZEON CO
发明人： OIE MASAYUKI , ABE NOBUNORI
IPC分类号： G03F7/004 , G03F7/028 , G03F7/039 , H01L21/027
摘要： PURPOSE:To obtain a resist composition highly balanced and enhanced in resist characteristics by using a hydrogenated phenol resin as an alkali-soluble resin and a specified phenol compound substituted by an acid-instable group for its hydroxyl group as a compound having an acid-instable group. CONSTITUTION:The compound having the acid-instable group is the phenol compound substituted by the acid-instable groups for one of its hydroxyl groups and represented by formulae I-IV in which each of R1-R4 is H, halogen, OH, nitro, optionally substituted alkyl or optionally substituted alkoxy; and each of R6-R7 is H, alkyl, cycloalkyl, or alkenyl.

4. 发明专利

JPH05113666A RESIST COMPOSITION 失效
公开(公告)号：JPH05113666A
公开(公告)日：1993-05-07
申请号：JP30105491
申请日：1991-10-21
申请人： NIPPON ZEON CO
发明人： OIE MASAYUKI , TANAKA HIDEYUKI , ABE NOBUNORI
IPC分类号： G03F7/004 , G03F7/023 , G03F7/029 , G03F7/038 , H01L21/027 , H01L21/30
摘要： PURPOSE:To provide a resist material having excellent resist characteristics such as sensitivity, resolution and shelf stability, especially fit for lithography with far UV having short wavelength or KrF excimer laser light and having excellent stability of sensitivity after exposure. CONSTITUTION:This resist compsn. contains alkali-soluble phenol resin, a compd. capable of producing an acid under irradiation with active rays of light, a compd. capable of crosslinking the alkali-soluble phenol resin in the presence of the produced acid and an alcohol compd. having >=170 deg.C b.p. under ordinary temp.

5. 发明专利

JPH0511441A RESIST COMPOSITION 失效
公开(公告)号：JPH0511441A
公开(公告)日：1993-01-22
申请号：JP18813891
申请日：1991-07-02
申请人： NIPPON ZEON CO
发明人： OIE MASAYUKI , TANAKA HIDEYUKI , ABE NOBUNORI
IPC分类号： G03F7/004 , G03F7/029 , G03F7/038 , H01L21/027 , H01L21/30
摘要： PURPOSE:To obtain resist characteristics superior in sensitivity, resolution, etching resistance, and storage stability by incorporating a specified polyhalophenol compound to be allowed to produce acid by irradiation with active rays. CONSTITUTION:The resist composition comprises the alkali-soluble phenol resin, the compound to be allowed to produce acid by irradiation with the active rays, and a compound capable of cross-linking in the presence of acids, and this compound is the polyhalophenol compound selected from the group consisting of the compound represented by one of forumlae I and II and the like. In formulae I and II, each of R1-R8 is halogen, H, or the like. It is preferable that the halogen atoms of this polyhalophenol compound combined with the aromatic ring are bromine or chlorine atoms, and the compound capable of cross-linking in the presence of acid is compound having a C-O-R (R is H or alkyl) group or an epoxy group.

6. 发明专利

JPH04291260A RESIST COMPOSITION 失效
公开(公告)号：JPH04291260A
公开(公告)日：1992-10-15
申请号：JP7836691
申请日：1991-03-19
申请人： NIPPON ZEON CO
发明人： OIE MASAYUKI , TANAKA HIDEYUKI , ABE NOBUNORI
IPC分类号： G03F7/004 , G03F7/022 , G03F7/023 , G03F7/038 , H01L21/027
摘要： PURPOSE:To provide a resist material which has excellent resist characteristics, such as sensitivity, definition, etching resistance, and preservation stability and is suitable for lithography using far UV rays of short wave length and KrF excimer laser beams. CONSTITUTION:This resist compsn. contains an alkali-soluble phenolic resin, a compd. to crosslink in the presence of an acid and a 1,2- naphthoquinonediazide-4-sulfonic acid compd. selected from the ester, amide and imide of the 1,2naphthoquinonediazide-4-sulfonic acid of a compd. having

7. 发明专利

JPH041653A POSITIVE TYPE RESIST COMPOSITION 失效
公开(公告)号：JPH041653A
公开(公告)日：1992-01-07
申请号：JP10231790
申请日：1990-04-18
申请人： NIPPON ZEON CO
发明人： OIE MASAYUKI , YAMADA TAKAMASA , KAWADA MASAJI
IPC分类号： G03F7/022 , H01L21/027
摘要： PURPOSE:To improve various characteristics, such as sensitivity, resolution, residual film rate, heat resistance, and preservable stability by incorporating the quinonediazide sulfonate of a specific compd. as a photosensitive agent into the above compsn. CONSTITUTION:The quinonediazide sulfonate of the compd. expressed by formula I is incorporated as the photosensitive agent into this compsn. In the formula I, A denotes an alkylene group, substd. alkylene group alkenyl group or substd. alkenyl group; R to R denote hydrogen, halogen, 1 to 4C alkyl group, 1 to 4C alkoxy group or hydroxyl group. The positive type resist compsn. which excels in the various characteristics, such as sensitivity, resolution, residual film rate, heat resistance, and preservable stability and is suitable for fine working particularly for

8. 发明专利

JPH041652A POSITIVE TYPE RESIST COMPOSITION 失效
公开(公告)号：JPH041652A
公开(公告)日：1992-01-07
申请号：JP10231690
申请日：1990-04-18
申请人： NIPPON ZEON CO
发明人： OIE MASAYUKI , URUMA TAKASHI , YAJIMA MIKIO , MIHIRA TAKAYUKI
IPC分类号： G03F7/022 , H01L21/027 , H01L21/30
摘要： PURPOSE:To improve various characteristics, such as sensitivity, resolution, residual film rate, heat resistance, and preservable stability by incorporating the quinonediazide sulfonate of a specific compd. as a photosensitive agent into the above compsn. CONSTITUTION:The quinonediazide sulfonate of the compd. expressed by formula I is incorporated as the photosensitive agent into this compsn. In the formula I, A denotes an alkylene group, substd. alkylene group, alkenyl group, substd. alkenyl group, arylene group or substd. arylene group. R to R denote hydrogen, halogen, 1 to 4C alkyl group, 1 to 4C alkoxy group, 1 to 4C alkenyl group or hydroxyl group. The positive type resist compsn. which excels in the various characteristics, such as sensitivity, resolution, residual film rate, heat resistance, and preservable stability and is suitable for fine working particularly for

9. 发明专利

JPH03144454A POSITIVE TYPE RESIST COMPOSITION 失效
公开(公告)号：JPH03144454A
公开(公告)日：1991-06-19
申请号：JP28272189
申请日：1989-10-30
申请人： NIPPON ZEON CO
发明人： OIE MASAYUKI , KAWADA MASAJI , IKEDA SHINYA
IPC分类号： G03F7/022 , C08G8/00 , C08G8/10 , H01L21/027 , H01L21/30
摘要： PURPOSE:To obtain a positive type resist composition superior in characteristics, such as sensitivity, film retentivity, resolution, heat resistance, storage stability, and adapted to microfabrication by incorporating a specified quinonediazidosulfonic ester as a potosensitive agent. CONSTITUTION:The quinonediazidosulfonic ester to be used as the photosensitive agent is represented by formula I in which each of R1 - R10 is H, halogen, OH, 1 - 3 C alkyl or alkenyl, or such optionally substituted hydroxyalkyl, each optionally same or different, thus permitting the obtained positive type resist composition to be enhanced in characteristics, such as sensitivity, resolution, film retentivity, and heat resistance, and especially adapted to microfabrication as fine as

10. 发明专利

JPH03107162A RESIST COMPOSITION 失效
公开(公告)号：JPH03107162A
公开(公告)日：1991-05-07
申请号：JP24392589
申请日：1989-09-20
申请人： NIPPON ZEON CO
发明人： OIE MASAYUKI , KAWADA MASAJI , YAMADA TAKAMASA
IPC分类号： G03F7/039 , G03F7/004 , G03F7/038 , H01L21/027 , H01L21/30
摘要： PURPOSE:To obtain a positive mold adequate for fine working of a semiconductor element having high sensitivity and resolution by constituting a resist material which can form patterns by irradiation with far UV rays of the compsn. contg. an alkaline-soluble hydrogenated phenolic resin, a compd. which can be acid-cloven by the irradiation with active rays, and a compd. which crosslinks in the presence of an acid. CONSTITUTION:The condensation reaction product of phenols and aldehydes and the condensation reaction product of phenols and ketones, a vinyl phenol polymer, isopropenyl phenol polymer are used as the alkaline-soluble hydrogenated phenolic resin. The compd. which can be acid-cloven by the irradiation with active rays, i.e., photoacid generator, is not particularly limited if the compd. is the material which generates Bronsted acid or Lewis acid; for example, an onium salt and halogenated org. compd. are used. The compd. which crosslinks in the presence of the acid is satisfactory if the compd. is the material which degrades the solubility of the hydrogenated phenolic resin in an alkaline developing agent; for example, a compd. having a C-O-R (group) (R is an alkyl group) is used.

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