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    • 2. 发明专利
    • AIRTIGHT CONTAINER WITH LIGHT TRANSMISSION OPENING
    • JPS5637656A
    • 1981-04-11
    • JP11332779
    • 1979-09-04
    • NIPPON ELECTRIC CO
    • NAKASHIMA MASATOISHIDA AKIRA
    • H01L23/02H01L31/0203
    • PURPOSE:To avoid the decrease is light transmission performance of an airtight container with a light transmission opening without coating a low melting point glass directly on when opening by interposing a ring-like spacer coated with a low melting point glass therebetween the securing a semiconductor element for emitting a light and for receiving a light on a substrate and forming the opening at an interval thereon. CONSTITUTION:A photosemiconductor 8 is secured to the central portion on a planar ceramic substrate 4 formed with a metallized wire 6 on the periphery thereof while exposing the central portion thereof with an low melting point solder such as an AuSi or the like or Ag paste. Then, electrodes fromed thereon are connected through fine wires made of Au, Al or the like to the wire 6, and external lead wires 7 are led from the wires 6. When a planar light transmission opening 5 made of glass, saphhire, quarts or the like is confronted thereafter with the photosemiconductor 8, a ring-shaped ceramic support 8 having low metling point glass-coated layers 2, 3 on each of both the front surface and the back surface of a circular or rectangular shape is fixedly disposed between the wire 6 and the opening 5.
    • 3. 发明专利
    • SEMICONDUCTOR LASER DEVICE
    • JPS55153389A
    • 1980-11-29
    • JP6200679
    • 1979-05-18
    • NIPPON ELECTRIC CO
    • NAKASHIMA MASATO
    • H01L29/43H01L21/28H01S5/00H01S5/024
    • PURPOSE:To obtain a highly reliable device capable of withstanding high temperature by the heat welding technique that metals joint together under the mechanical pressure at a high temperature. CONSTITUTION:AlGaAs undergoes the multi-layer epitaxial growth to form a semiconductor laser 1 with a double heterostructure. To dissipate the heat on an active layer 5 as a thermal surface, the laser is bonded on a diamond heat sink 2 with p side downward. The highly adhesive first metal layers 3, 3' and 3'' including Ti, Zr, Hf, Cr, Mo and W is fomed at the thickness of about 0.01-0.1mum and highly conductive and malleable second metal layers 4, 4' and 4'' including Au, Ag, Cu and Al is evaporated under vacuum on the first metal layers at the thickness of about 1-5mum. Then, the pressure is applied on the laser above the specified level to joint the components by the heat welding while it is maintained above the specified temperature. Thus, a highly reliable semiconductor laser device withstanding high temperature can be produced.
    • 8. 发明专利
    • SEMICONDUCTOR ELEMENT CONTAINER
    • JPS5637654A
    • 1981-04-11
    • JP11332879
    • 1979-09-04
    • NIPPON ELECTRIC CO
    • NAKASHIMA MASATOISHIDA AKIRA
    • H01L23/08H01L23/057
    • PURPOSE:To improve the accuracy of the external shape of a semiconductor element container of the type containing a semiconductor element in a recess formed on the surface of a laminated ceramic and sealing it with a cap by extending the periphery of container externally from the cap while maintaining the surface of placing the element as the same level as the periphery of the container. CONSTITUTION:The first ceramic layer 1 is formed of laminate ceramics, and a second ceramic layer 3 of ring shape is formed thereon as projected. Thus, a semiconductor element container is formed. Then, a semiconductor element 6 is soldered to the central portion on the surface 7 of the first layer 1 as surrounded by the second layer 3, and an electrode is connected to a metallized layer 2 formed on the first layer 2 using a fine bonding wire 8. Thereafter, an external lead wire 5 is connected to the end of the metallized layer 2 passing through the wall of the layer 3, and a cap 9 is fixed onto the surface of the second layer 3 using a low melting poing glass seal layer 10. Since the container may deform due to the sintering treatment in this configuration when forming the container, an externally extended exposed portion 4 is formed on the first layer 1 upon production of the container, and the deformation can be thus reduced at the container.