专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

JPH07307452A QUANTUM WIRE STRUCTURE AND ITS MANUFACTURE 失效
公开(公告)号：JPH07307452A
公开(公告)日：1995-11-21
申请号：JP12454094
申请日：1994-05-13
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： OSAKA JIRO , WAHO TAKAO
IPC分类号： C30B23/08 , C30B29/40 , H01L29/06 , H01L29/15 , H01L29/66
摘要： PURPOSE:To form a fractional supper lattice layer on a buffer layer in a manner that a group of a blocking layer part and well layer part (both are III-V semiconductor layer) will have a highly accurate step cycle in accordance with the tilt angle from a low-index face of a III-V compound semiconductor substrate body in a facial direction and to make the layer to operate as a uniform quantum wire structure. CONSTITUTION:A quantum wire structure is provided with a III-V compound semiconductor layer 10 that is formed on the surface comprised of a step face 4a of a III-V compound semiconductor layer 4 as a first blocking layer and whose thickness is set to be at most three molecular layer through molecular beam epitaxial growth. In addition, the layer 10 is a buffer layer having a surface comprised of a step face 10a that is made of GaAs having a narrower forbidden band width than that of the layer 4 as the first blocking layer and corresponds to a step face 3a of a III-V compound semiconductor layer 3 of a III-V compound semiconductor substrate 1. Then, a fractional supper lattice layer 5 consisting of a semiconductor layer part 5B as a blocking layer and a semiconductor layer part 5W as a well layer is provided on the step 10a.

2. 发明专利

JPH0661476A RESONANCE TUNNEL TRANSISTOR 失效
公开(公告)号：JPH0661476A
公开(公告)日：1994-03-04
申请号：JP22455292
申请日：1992-08-03
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： SHIMIZU NAOFUMI , WAHO TAKAO
IPC分类号： H01L29/06 , H01L29/68
摘要： PURPOSE:To reduce base resistance and obtain a high amplification factor of a resonance transistor. CONSTITUTION:A first barrier layer 10 which becomes a barrier for an electron which is a minority carrier, a first well layer 105 which becomes a well for the electron, a second barrier layer 106, a second well layer 107, a third barrier layer 108, a third well layer 109, and a fourth barrier layer 110 are sandwiched by an emitter layer 112 and a collector layer 101. Then, the area where the minority carrier electrons exist in a base region and the area where majority carrier positive holes exist are different, thus preventing recombination of the electrons and the positive holes at the base region when a collector current due to the resonance tunnel effect flows.

3. 发明专利

JPH0485966A RESONANCE TUNNELING STRUCTURE 失效
公开(公告)号：JPH0485966A
公开(公告)日：1992-03-18
申请号：JP20188590
申请日：1990-07-30
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： WAHO TAKAO
IPC分类号： H01L29/68 , H01L29/205
摘要： PURPOSE:To obtain a resonance current in a remarkably higher current density than a conventional structure by inserting a semiconductor laminate of a semiconductor layer as a barrier layer and a semiconductor layer as a well layer between first and second semiconductor layers under special conditions. CONSTITUTION:A semiconductor laminate 3 in which semiconductor layers B1, B2, B3 as barrier layers and semiconductor layers W1, W2 as well layers are laminated in the order of the layers B1, W1, B2, W2 and B3 is inserted between first and second semiconductor layers l and 2. The layers W1, W2 as the well layers have equal widths, and the layer B2 as the barrier layer has a thickness of 174-3/4 thinner than those of the layers W1, W2 as the well layers. When a bias voltage is applied between the layers 1 and 2, the layers B1, B3 as the barrier layers have sufficient barrier height and thickness to obtain a resonance level width of 1meV or higher, and a resonance current has a current density remarkably higher than prior art.

4. 发明专利

JPH02219271A COMPOUND SEMICONDUCTOR FIELD EFFECT TRANSISTOR AND ITS MANUFACTURE 失效
公开(公告)号：JPH02219271A
公开(公告)日：1990-08-31
申请号：JP4000189
申请日：1989-02-20
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： WAHO TAKAO , YANAGAWA FUMIHIKO , MARUO YOKO , OSHIMA MASAHARU
IPC分类号： H01L29/78 , H01L21/203
摘要： PURPOSE:To reduce the gate leak current and threshold voltage and stabilize the element operations of the title transistor by setting orientations of the first semiconductor layer and first insulating layer to plane (111) or another plane close to (111). CONSTITUTION:This compound semiconductor field effect transistor is provided with the first semiconductor layer 22 which is formed on a monocrystalline substrate 21 and has a spherical type crystal structure, first insulating layer 22 which is formed on the layer 22 and has a fluorite type crystal structure, a gate electrode provided on the layer 23, a source and drain areas 25a and 25b provided in the layer 22, and a source electrode 26a and drain electrode 26b respectively provided adjacent to areas 25a and 25b. In addition, orientations of the layers 22 and 23 are set to plane (111) or another plane close to (111). Therefore, the homogeneity of the monocrystalline insulating layer is improved, resulting in reduction of gate leak current, and, at the same time, the threshold voltage is lowered due to a reduction in interface level density. In addition, the characteristics of the transistor are stabilized, because occurrence of stress is suppressed.

5. 发明专利

JPS63204660A SEMICONDUCTOR ELEMENT 失效
公开(公告)号：JPS63204660A
公开(公告)日：1988-08-24
申请号：JP3571987
申请日：1987-02-20
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： WAHO TAKAO
IPC分类号： H01L29/205 , H01L21/338 , H01L29/775 , H01L29/778 , H01L29/78 , H01L29/80 , H01L29/812
摘要： PURPOSE:To enable transverse extension of a channel region to be defined and to obtain a very high speed element, by providing a fourth electrode between second and third electrodes for controlling current conducted through the channel region between the second and third electrodes. CONSTITUTION:A fine wire-like doped region 405 is provided in a substrate 401. A layer 403 having a lower electron affinity is provided thereon and a layer 404 having a higher electron affinity is further provided on the layer 403. An electrode 400 connected to the doped region 405 is also provided and a predetermined voltage is applied. The doped region 405 functions as a channel inducing region so that a so-called MIS-like FET structure in which channel region formed of a carrier storing layer or carrier inversion layer is induced on the lower face of the uppermost layer is provided. In this manner, a extremely miniaturized structure can be realized, vertically along the thickness of deposited films. Further, miniaturized construction is made possible also in the transverse direction, namely along the width of the channel, without being adversely affected by surface trapping and a one-dimensional channel can be formed. Accordingly, it is made possible to obtain a very high speed element taking most advantage of rapid propagation of electron.

6. 发明专利

JPS60173888A SUPERCONDUCTOR THIN FILM AND MANUFACTURE THEREOF 失效
公开(公告)号：JPS60173888A
公开(公告)日：1985-09-07
申请号：JP2819084
申请日：1984-02-17
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： WAHO TAKAO , HASUMI YUUJI , YANAGAWA FUMIHIKO
IPC分类号： H01B12/06 , H01B13/00 , H01L39/22 , H01L39/24
摘要： PURPOSE:To obtain the titled element of high reliability by using a material where the crystal grains of Pb-Ind solid solution are arranged in three dimensions with regularity, and an intermetallic compound of a metal selected from among Au, Ag, Mn, Bi, and Ni with Ind is interposed between crystal grains. CONSTITUTION:In a vacuum container 11, the surface of a cooling body 12 is pressed on a substrate 1 via Ind thin plate 13 or thin plate 13 and thermal conductor 13'. For example, at a temperature of 7.7K, Pb 14, Ind 15, and a metal 16 selected from among Au, Ag, Mn, Bi, and Ni are simultaneously evaporated from evaporation sources 17, 18 and from a Knudsen cell 20 having a heater 19, respectively. The crystal grains 3 of a Pb-Ind solution are arranged in three dimensions with regularity by heat annealing treatment, thus forming a thin film where an intermetallic compound 4 of the selected metal 16 with Ind has been interposed between the crystal grains. This enables easy formation of the superconductor thin film having high reliability.

7. 发明专利

JPS52151679A HOLDING OF SUBSTRATE 失效
公开(公告)号：JPS52151679A
公开(公告)日：1977-12-16
申请号：JP6944276
申请日：1976-06-14
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： MARUYAMA TOORU , AMANO TOSHIAKI , OGAWA SHIGEO , WAHO TAKAO
IPC分类号： C30B23/02 , C23C14/50 , C23C14/54 , C23C16/44 , C23C16/458 , C30B23/08
摘要： PURPOSE:To make adhere easily the substrate for molecular beam epitaxial growth or vacuum evaporation to the substrate holder, by producing a liquid alloy having good stability by contacting plural number of metals being able to react at room temperature to form an alloy (e.g. Ga and In), and by putting this alloy between the above-mentioned substrate and the substrate holder in the form of a thin layer.

8. 发明专利

JPH1065186A RESONANCE TUNNEL DIODE 失效
公开(公告)号：JPH1065186A
公开(公告)日：1998-03-06
申请号：JP21961796
申请日：1996-08-21
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： KITABAYASHI HIROTO , WAHO TAKAO
IPC分类号： H01L29/88
摘要： PROBLEM TO BE SOLVED: To enable improving peak current density, without decreasing the ratio of a peak current to a valley current in a structure having a constant barrier thickness by using a quantum well layer having a thickness, so that the resonance level of light positive holes in the quantum well layer is just above the lower end of the conduction band of an emitter layer. SOLUTION: The resonance level of light positive holes in a p-type GaSb quantum well layer 104 is just above the lower end of the conduction band of an n-type InAs emitter layer 106, so that the effective heights of AlSb barrier layers 103, 105 can be made minimum, under the condition that a resonance tunnel exists. Thereby the maximum width of resonance level can be obtained under the condition that a resonance tunnel exists. The increase in a valley current caused by that the resonance level being just above the lower end of the conduction band is not recognized. Thereby the peak current density can be improved, without decreasing the ratio of a peak current to a valley current, in the resonace tunnel diode structure having a constant barrier width.

9. 发明专利

JPH09321610A SEMICONDUCTOR LOGIC CIRCUIT 失效
公开(公告)号：JPH09321610A
公开(公告)日：1997-12-12
申请号：JP13712796
申请日：1996-05-30
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： KEI JIEI CHIEN , WAHO TAKAO , MAEZAWA KOICHI , YAMAMOTO MASASHI
IPC分类号： H03K19/10 , H03K17/687 , H03K17/70 , H03K19/0952 , H03K19/20
摘要： PROBLEM TO BE SOLVED: To acquires one selected logical function at high speed by ] inputting the selected logic function as a logical input signal and outputting an output signal voltage as a logical output signal. SOLUTION: A serial semiconductor element connection circuit 1 is operated by an AC power supply voltage VDA or VDB. Then, one logical function selected among logical functions such as 'AND' logical function, 'OR' logical function, 'NAND'logical function, 'NOR' logical function, 'XOR' logical function and 'XNOR' logical function is inputted with input signal voltages V1 and V2 as the logical input signals and an output signal voltage VM is outputted as the logical output signal.

10. 发明专利

JP2504442B2 失效
公开(公告)号：JP2504442B2
公开(公告)日：1996-06-05
申请号：JP3873287
申请日：1987-02-21
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： WAHO TAKAO
IPC分类号： H01L29/205 , H01L21/338 , H01L29/775 , H01L29/778 , H01L29/78 , H01L29/80 , H01L29/812

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式