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1. 发明专利

JPS5434689A FORMATION OF PROTECTIVE FILM FOR FIGHT DRAWWOUT END SURFACE OF LUMINOUS ELEMENT 失效
公开(公告)号：JPS5434689A
公开(公告)日：1979-03-14
申请号：JP10016777
申请日：1977-08-23
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： SAITOU HIDEHO , IWANE GANZOU
IPC分类号： H01L21/314 , H01L33/10 , H01L33/14 , H01L33/30 , H01S5/00
摘要： PURPOSE:To form a protective film on the light draw-out end surface of the luminous element to remove easily the dielectric film which is formed unavoidably on the electrode.

2. 发明专利

JPS5451786A MANUFACTURE OF LUMINOUS SEMICONDUCTOR DEVICE OR OPTICAL IC 失效
公开(公告)号：JPS5451786A
公开(公告)日：1979-04-23
申请号：JP11787577
申请日：1977-10-03
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： SAITOU HIDEHO , OOMACHI TOKUROU
IPC分类号： G02B6/12 , H01L27/15 , H01S5/00
摘要： PURPOSE:To form more than one mirror surface on the same surface in the multi- layer structure to which composition ratio x is varied between GaAs and AlxGa1-X As, by providing particularly high Al density layer with the side etching given selectively and thus forming the eaves part of the low Al layer with a cleavage. CONSTITUTION:Al high density n-type AlzGa1-z As 10, n-type AlyGa1-y As2', GaAs 3', p-type AlyGa1-yAs4' and n-type GaAs5' are laminated on n-type GaAs1'. Then the Zn diffusion is given reaching layer 4' from layer 5' to form P -layer in stripes, and ohmic p-type electrode 7' and n-type electrode 8' are attached. Groove 9' is formed to reach substrate 1, and a side etching is given selectively to layer 10 with use of fluoric acid, hydrochloric acid, phosphoric acid, etc. to form eaves 11. A high selecting property is ensured if x + 0.25

3. 发明专利

JPS56110283A MANUFACTURE OF EMBEDDED CIRCUIT STRUCTUREETYPE SEMICONDUCTOR LASER DEVICE 失效
公开(公告)号：JPS56110283A
公开(公告)日：1981-09-01
申请号：JP1217580
申请日：1980-02-04
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： TAKAHASHI SHINICHI , SAITOU HIDEHO
IPC分类号： H01L21/208 , H01S5/00 , H01S5/227
摘要： PURPOSE:To facilitate etching process on a high-resistance region by forming a semiconductor laminated body on a semiconductor substrate, then forming a high- resistance region and a high-resistance layer and finally a semiconductor clad layer. CONSTITUTION:A semiconductor laminated body C1 is formed on a semiconductor substrate 21. Next, in order to form a semiconductor laminated body C2 having a stripe-shaped semiconductor laminated body E on the semiconductor laminated body C1, a high-resistance region D1 is formed. Following this procedure, a high-resistance layer D2 is formed on the surface of the semiconductor laminated body C2 by etching the high-resistance region D1. Further, the stripe-shaped semiconductor laminated body E of the semiconductor laminated body C2 is embedded by means of a semiconductor layer B6. After this step, a semiconductor ohm contact layer F and metal electrode G1, G2 are formed.

4. 发明专利

JPS5423487A SEMICONUCTOR LASER OF CURRENT STENOSING TYPE 失效
公开(公告)号：JPS5423487A
公开(公告)日：1979-02-22
申请号：JP8948877
申请日：1977-07-25
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： WAKITA KOUICHI , SAITOU HIDEHO , IWANE GANZOU
IPC分类号： H01S5/00
摘要： PURPOSE:To establish the laser light of transversal mode remarkably stable, by providing the current stenosing path surrounded with less diffraction region at the center of the surface layer in contact with the substrate clad layer, informing a current stenosing type semiconductor laser.

5. 发明专利

JPS5422185A CURRENT STENOSIS TYPE PLANAR SEMICONDUCTOR LASER 失效
公开(公告)号：JPS5422185A
公开(公告)日：1979-02-19
申请号：JP8715277
申请日：1977-07-20
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： IWANE GANZOU , WAKITA KOUICHI , SAITOU HIDEHO , SHIMADA KEISUKE
IPC分类号： H01S5/00
摘要： PURPOSE:To obtain the laser beam which does not contain the lateral mode the enclosure layer by forming the current stenosis region at the end of the enclosure region formed on the semiconductor substrate.

6. 发明专利

JPS5419686A CURRENT NARROWING TYPE SEMICONDUCTOR LASER 失效
公开(公告)号：JPS5419686A
公开(公告)日：1979-02-14
申请号：JP8468977
申请日：1977-07-15
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： FUJIMOTO MASATOMO , KAWASAKI YASUHIRO , SAITOU HIDEHO , IWANE GANZOU
IPC分类号： H01L21/265 , H01S5/00
摘要： PURPOSE:To reduce distortions in active layer produced at the time of heat treatment and avert the degradation in characteristics by forming the stripe region provided perpendicularly in laser element to narrow current through ion implantation using Be of a small rate of diffusion.

7. 发明专利

JPS60133777A SEMICONDUCTOR LIGHT EMITTING DEVICE 失效
公开(公告)号：JPS60133777A
公开(公告)日：1985-07-16
申请号：JP24089283
申请日：1983-12-22
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： SAITOU HIDEHO , NAGAI HARUO
IPC分类号： H01S5/00 , H01S5/0625 , H01S5/12
摘要： PURPOSE:To oscillate the titled device by a single wavelength over a wide range of temperatures by a method wherein the carrier density is controlled by passing forward directional currents to a reflection region having a diffraction grating. CONSTITUTION:A laser is composed of an N type InP substrate 1', an N type InP clad layer 2', an undoped InGaAsP active layer 3', a P type InP clad layer 4', a P type InGaAsP contact layer 5', an InGaAsP undoped photo waveguide layer 6', an insulation region 7', a driving P type electrode 8', a wavelength control P-side electrode 9' and an N-side electrode 10'. Light emission is obtained in a region A by passing forward idrectional current between the electrodes 8' and 10'. Injecting current to the reflection region B varies the refractive index in accordance with the number of injected carriers, thus enabling the wavelength capable of selective reflection to be controlled within a distribution of gain; accordingly, the enlargement of the temperature region of single vertical mode oscillation can be realized.

8. 发明专利

JPS55105393A PROCESS OF SEMICONDUCTOR LASER DEVICE 失效
公开(公告)号：JPS55105393A
公开(公告)日：1980-08-12
申请号：JP1280079
申请日：1979-02-08
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： SAITOU HIDEHO
IPC分类号： H01S5/00
摘要： PURPOSE:To improve the efficiency of laser and to reduce the threshold current by stabilizing both current constriction and the horizontal mode and by reducing the p side electrode resistance simultaneously without heat damage to active layer below the stripe. CONSTITUTION:The n-InP clad layer 2, active layer 3, p-InP buffer layer 4 and p-InGaAs clad layer 5 are crystal-grown on the n-InP substrate 1, the layer 5 except the stripe is selectively etched to form a mesa. Next the current preventive and absorptive layer 6 is formed without heat damage to the active layer 3 below the stripe, the p area 7 is provided in the layer 6 by diffusing Zn over the whole surface of the layer 6 so that it reaches the clad layer 5 and does not pierce the absorptive layer 6, the p and n electrodes 8, 9 are formed last. In this way, the efficiency of laser can be improved and the threshold current can be reduced by stabilizing both current constriction and the horizontal mode and by reducing the p side electrode resistance without heat damage to the active layer below the stripe.

9. 发明专利

JPS5511338A SEMICONDUCTOR LASER DEVICE 失效
公开(公告)号：JPS5511338A
公开(公告)日：1980-01-26
申请号：JP8374878
申请日：1978-07-10
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： KAWAGUCHI HITOSHI , SAITOU HIDEHO , WAKITA KOUICHI
IPC分类号： H01S5/00
摘要： PURPOSE:To obtain laser oscillation in single vertical mode, by piling a plurality of semiconductor layers including a semiconductor active layer on a semiconductor base, forming a cavity on the base side, and forming a reflecting film at this cavity and on the surface opposite this cavity. CONSTITUTION:On N-type semiconductor base 1 are piled N-type semiconductor carrier sealed layer 2, N-type or P-type semiconductor active layer 3, P-type semiconductor carrier layer 4, and N-type semiconductor layer 5, for example. Also, cavity 6 of depth reaching layer 2 from the side opposite to layer 2 is formed on base 1. Reflecting film 8, which extends to electrode 7, is formed on the inner surface of cavity 6. Window 9, which partially faces layer 4, is provided at the position where layer 5 faces cavity 6. P-type region 10 is formed in the region of layer 5 facing window 9. A reflecting film and film 2, which functions as electrode, are formed in region 10 above window 9. A power source is connected between electrode 7 and electrode 12, with electrode 12 made positive. Then, it is possible to obtain laser oscillation between films 12 and 8, with their interval made as resonator, and it is taken out via film 8, for example.

10. 发明专利

JPS5420684A LIGHT EMITTING SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS5420684A
公开(公告)日：1979-02-16
申请号：JP8496777
申请日：1977-07-18
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： SAITOU HIDEHO , IWANE GANZOU , WAKITA KOUICHI
IPC分类号： H01L33/14 , H01L33/30 , H01S5/00
摘要： PURPOSE:To improve current narrowing and improve transverse oscillation mode output characteristics by implanting ions such as of N2, P, B, Al, etc. to the periphery enclosing a stripe form active region, making the implanted region nonconductive and making the refractive index smaller than that of the active region.

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