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1. 发明专利

JP2000058433A EXPOSURE SYSTEM 失效
公开(公告)号：JP2000058433A
公开(公告)日：2000-02-25
申请号：JP23629498
申请日：1998-08-07
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： DEGUCHI KIMIKICHI , NAKAMURA JIRO , FUKUDA MAKOTO , TAKEUCHI NOBUYUKI
IPC分类号： G03F7/20 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To prevent an undesirable component from penetrating into an exposure work by a method wherein an undesirable gas component, is removed from gas that is introduced into an exposure chamber and the residual gas is dehumidified and sent to a blowing pump, and the gas is provided through the blowing pump as gas used in an air conditioner. SOLUTION: Instead of that gas exhausted from an exposure chamber 6 through an exhaust means 12 is sent direct to a blowing pump 14 in a usual exposure system, gas is sent as shown by an arrow 21 to an undesirable component removing means 15 which removes an undesirable component from gas so as not to make the gas generate a component that is undesirable for an exposure work when gas is irradiated with exposure light, then sent to a dehumidifying means as shown by an arrow 23 and a blowing pump 14 as shown by an arrow 24, and then supplied to an air conditioner 11 as operating gas as shown by an arrow 22.

2. 发明专利

JPH08160620A POSITIVEE TYPE RESIST MATERIAL 失效
公开(公告)号：JPH08160620A
公开(公告)日：1996-06-21
申请号：JP33172094
申请日：1994-12-09
申请人： SHINETSU CHEMICAL CO , NIPPON TELEGRAPH & TELEPHONE
发明人： TAKEMURA KATSUYA , TSUCHIYA JUNJI , ISHIHARA TOSHINOBU , TANAKA HARUYORI , KAWAI YOSHIO , NAKAMURA JIRO
IPC分类号： G03F7/004 , G03F7/029 , G03F7/039 , G03F7/075 , H01L21/027
摘要： PURPOSE: To provide a positive type resist material sensitive to high-energy beams and excellent in sensitivity and resolution. CONSTITUTION: This positive type resist material can be developed by an alkaline aqueous solution containing two components of a silicone polymer expressed by formula I and an acid generating agent decomposed by the action of the illuminated radioactive rays to generate acid. The acid generating agent is the onium salt expressed by formula II (R)PJM. In formula I, Q indicates the t-butoxy carbonyl group, (n) indicates an integer of 1-3, x+m=1, and (x) is non-zero. In formula II, R is the aromatic group or substituted aromatic group, at least one of R is the phenyl group substituted with the t-alkoxy group expressed by R 3 CO- (R is the substituted or unsubstituted monovalent hydrocarbon group), J indicates sulfonium or iodonium, M indicates the p-toluene sulfonate group or trifluoromethane sulfonate group, and (p) is 2 or 3.

3. 发明专利

JPH08110635A CHEMICALLY AMPLIFIED POSITIVE RESIST MATERIAL 失效
公开(公告)号：JPH08110635A
公开(公告)日：1996-04-30
申请号：JP27057994
申请日：1994-10-07
申请人： SHINETSU CHEMICAL CO , NIPPON TELEGRAPH & TELEPHONE
发明人： OIKAWA KATSUYUKI , ISHIHARA TOSHINOBU , YAGIHASHI FUJIO , TANAKA HARUYORI , KAWAI YOSHIO , NAKAMURA JIRO
IPC分类号： G03F7/004 , G03F7/039
摘要： PURPOSE: To obtain a positive resist material sensitive to high energy beams such as far UV, electron beams or X-rays as a positive resist, excellent in sensitivity, resolution and plasma etching resistance, giving a resist pattern excellent in heat resistance, not causing PED or trailing phenomenon as the cause of the T-top shape of a pattern, excellent in dimensional precision and having high resolution fit for fine working technique. CONSTITUTION: A salt of pyridine or its deriv. represented by the formula is added to a chemically amplified positive resist material contg. an org. solvent, an alkali-soluble resin and an acid generating agent or further contg. a dissolution inhibits In the formula, R is H, alkyl, alkoxy, amino or dialkylamino and Y is alkylsulfonic acid, arylsulfonic acid or halogen.

4. 发明专利

JPH07239558A DEVELOPER AND PATTERN FORMING METHOD 失效
公开(公告)号：JPH07239558A
公开(公告)日：1995-09-12
申请号：JP5254694
申请日：1994-02-28
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： TANAKA HARUYORI , KAWAI YOSHIO , NAKAMURA JIRO
IPC分类号： G03F7/039 , G03F7/30 , G03F7/32 , G03F7/38 , G03F7/40 , H01L21/027
摘要： PURPOSE:To provide a pattern forming method using a positive type resist material for exposure with high energy beams excellent in applicability to a process. CONSTITUTION:One or more kinds of crosslinking agents selected from among hexamethylolmelamine, phenylenediamine and xylylene glycol are added to a developer contg. tetraalkylammonium hydroxide to obtain the objective developer used for a chemical amplification type positive resist material. A pattern of a chemical amplification type positive resist contg. a polyhydroxystyrene deriv. is formed through a heat treating process after exposure, a developing process using a developer obtd. by adding a crosslinking agent to an aq. alkali soln. and a deihydrating and baking process. Irradiation with far UV may be carried out after the development or development with only an aq. alkali soln. and processing with a soln. contg. a crosslinking agent may be carried out. The deformation of the formed pattern during etching can be inhibited.

5. 发明专利

JPH0547653A APPARATUS AND METHOD FOR CURING RESIN 失效
公开(公告)号：JPH0547653A
公开(公告)日：1993-02-26
申请号：JP23076391
申请日：1991-08-19
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： ISHII TETSUYOSHI , NAKAMURA JIRO , MATSUDA KOREHITO
IPC分类号： B29C35/02 , B29C35/08 , B29K105/24 , H01L21/027
摘要： PURPOSE:To always obtain a predetermined degree of cure to be obtained for resin in which curing sensitivity is largely varied due to an aging change, etc. CONSTITUTION:After a sample 8 coated with resist is pattern-exposed, it is placed on a heating plate 3, heated at 105 deg.C, and its curing is advanced. On the other hand, as a process is started, a polarized laser light 7 from a laser light source 4 is obliquely incident to an exposure resin to be monitored on the surface of the sample 8, its reflected light is detected by a detector 5, its refractive index is calculated, a refractive index change is monitored in real time with curing process, and a predetermined degree of cure is obtained.

6. 发明专利

JPH04269756A RESIST FILM SUITABLE FOR LIFT-OFF WORKING 失效
公开(公告)号：JPH04269756A
公开(公告)日：1992-09-25
申请号：JP5019691
申请日：1991-02-25
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： BAN KOJI , NAKAMURA JIRO , SAITO TORAO , TANAKA HARUYORI
IPC分类号： G03F7/095 , G03F7/26 , H01L21/027
摘要： PURPOSE:To obtain such a resist film useful for formation of a mushroom-shape gate electrode, which can be developed in an alkali soln. and has high sensitivity and high heat resistance. CONSTITUTION:The above resist film has a three-layer structure comprising a lower layer, intermediate layer comprising water-soluble polymer, and upper layer. The lower layer consists of a positive resist (A) of alkali developing type which responds to electron beams. The upper layer consists of a positive resist (B) of alkali developing type and may be same as or different from (A). It is preferable that (A) contains three components of novolac resin, bis(t- butylphenyl) iodonium fluoromethyl sulfonate, and 2,2-bis(t-butoxy carbonyl oxyphenyl) propane and that the intermediate layer has an antistatic effect. This resist film is useful for microfabrication of semiconductor elements.

7. 发明专利

JPH04212159A POSITIVE TYPE RESIST MATERIAL 失效
公开(公告)号：JPH04212159A
公开(公告)日：1992-08-03
申请号：JP1913491
申请日：1991-01-21
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： BAN KOJI , NAKAMURA JIRO , TANAKA HARUYORI , SAITO TORAO
IPC分类号： G03F7/004 , G03F7/029 , G03F7/039 , H01L21/027 , H01L21/30
摘要： PURPOSE:To obtain a positive type resist material for exposure with high energy beams having high sensitivity, high resolution and superior processability. CONSTITUTION:When a positive type resist sensitive to energy beams, developable with an aq. alkali soln. and contg. novolak resin (A), a dissolution inhibitor (B) and an acid generating agent (C) is produced, a compd. contg. one or more t-butoxycarbonyloxy groups in one molecule is used as the component A, bis(p-t- butylphenyl)iodonium trifluoromethylsulfonate is used as the component B and the weight ratio of A:B:C is regulated to (0.07-0.40):(0.005-0.15):

8. 发明专利

JPH0470662A SILOXANE POLYMER AND RESIST COMPOSITION 失效
公开(公告)号：JPH0470662A
公开(公告)日：1992-03-05
申请号：JP17725590
申请日：1990-07-06
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： TANAKA HARUYORI , BAN KOJI , NAKAMURA JIRO , KIMURA TAKAO
IPC分类号： G03F7/039 , C08G77/06 , C08G77/14 , C08G77/22 , C08G77/38 , C08L83/04 , C08L83/06 , G03F7/075 , H01L21/027
摘要： PURPOSE:To obtain a higher glass transition temp. and to improve oxygen plasma resistance by protecting a part or the whole of the hydroxyl group of specific polysiloxane with an alkyl group, substd. alkyl group, arom. group or silyl group. CONSTITUTION:The chemical structure of a ladder type which adopts the siloxane bond as a skeletal structure and uses the multifunctional alkoxysilane as a raw material is adopted in such a manner and the hydroxyl group subjected to ring opening by the introduction of the oxysilane ring is protected by the suitable functional groups, by which alkaline development is enabled. The higher glass transition temp. is obtd. in this way and the oxygen plasma resistance is improved.

9. 发明专利

JPH03276713A PATTERN FORMING MATERIAL AND PATTERN FORMING METHOD 失效
公开(公告)号：JPH03276713A
公开(公告)日：1991-12-06
申请号：JP7567390
申请日：1990-03-27
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： BAN KOJI , TANAKA HARUYORI , NAKAMURA JIRO
IPC分类号： H01L21/027
摘要： PURPOSE:To improve the shape of accumulated energy profile which is formed as a latent image by electron beam lithography and to improve the shape of a pattern and resolution by performing the electron beam lithography and the projection of light within a specified wavelength range for resist at the same level. CONSTITUTION:In negative-type elecron-beam resit comprising novolak resin or p-hydroxystyrene resin, melamine compound and acid generating agent, the acid generating agent forms acid by the projection of the electron beam. With the acid as a catalyst, the resin and the melamine compound are bridged, and negatives property is obtained. In resist material, intense absorption is present in far infrared region. There is a window part where the absorbance becomes the minimum value in the vicinity of 240-260nm. In the p-hydroxystirene resin, the window is located in the vicinity of 248nm. In the vicinity of 265nm, epsilonbecomes large up to about 0.7mum . Then, the light is projected at this wavelength region. Thus the shape of a pattern is improved. The light is selectively projected on the wavelength region at the optimum value in the range of 0.5-1.2mum for epsilon of the resist material. Thus, the shape of the pattern is improved.

10. 发明专利

JP2009125263A TENSE MUSCLE RELIEVING APPARATUS AND METHOD 审中-公开
公开(公告)号：JP2009125263A
公开(公告)日：2009-06-11
申请号：JP2007302715
申请日：2007-11-22
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： YAMADA TAKUMI , NAKAMURA MASAYUKI , NAKAMURA JIRO
IPC分类号： A61N1/36
摘要： PROBLEM TO BE SOLVED: To relieve tense which need not be generated in muscles automatically. SOLUTION: An opposite phase signal 12S showing an opposite phase to the phase of a myoelectric signal 11S detected by a detecting electrode 11 is generated in a signal generating circuit 12, and a feedback signal 13S is generated by making the opposite phase signal 12S undergo processing and conditioning in a signal processing circuit 13 and is outputted to the muscles from an output electrode 14. COPYRIGHT: (C)2009,JPO&INPIT

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