专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

JPH0743523A OPTICAL ARTICLE AND PRODUCTION THEREFOR 失效
公开(公告)号：JPH0743523A
公开(公告)日：1995-02-14
申请号：JP20708293
申请日：1993-07-29
申请人： NIPPON SHEET GLASS CO LTD , KOBE STEEL LTD
发明人： ITO TOSHIYA , NAKAI HIDEMI , KUMAKIRI TADASHI , INUISHI NORIYUKI
IPC分类号： G02B5/22
摘要： PURPOSE:To easily control thickness of a particle dispersion region and to easily control an absorption wavelength region by forming a thin film having light transmitting property on a transparent substrate and injecting a metal element into this thin film by ion implantation method. CONSTITUTION:This optical article consists of a transparent base body, thin film having light transmitting property formed on the transparent base material, and at least one kind of metal element injected into the thin film by ion implantation method. The metal element is preferably Au, Ag, Cu, Ti or Fe. When noble metal elements are used, it is advantageous that fine particles are easily formed even with a small amt. of implantation since noble metal is hardly oxidized and has a large diffusion const. of the univalent ion. The transparent base material is preferably made of a soda lime glass plate which is inexpensive, however glass or transparent synthetic resin plates may be used. Glass is advantageous since it has chemical stability.

2. 发明专利

JP2000182527A DEVICE AND METHOD FOR GENERATING ION AND DEVICE AND METHOD FOR IMPLANTING ION 失效
公开(公告)号：JP2000182527A
公开(公告)日：2000-06-30
申请号：JP35337698
申请日：1998-12-11
申请人： KOBE STEEL LTD
发明人： YUKIMURA KEN , KUMAKIRI TADASHI
IPC分类号： H01J27/08 , C23C14/48 , H01J37/08 , H01J37/317
摘要： PROBLEM TO BE SOLVED: To generate different kinds of plasma in one process without changing the device structure by flowing the pulse current to a conductive ion source so as to generate the pulse discharge, and securely implanting the ion into a work surface layer. SOLUTION: A linear or a foil-like ion generating source 5 is fixed between electrodes in a discharge chamber 3 at a low pressure, and when the pulse current is flowed, temperature is raised so as to form a particle cloud with the steam in the periphery of the raw material. Resistance of the raw material is increased by the temperature rise, and the voltage between the electrodes is increased. When the voltage between the electrodes achieves the discharge starting voltage of the medium, discharge is generated in the medium, and shunting discharge for generating the plasma including the raw material ion, namely, the pulse discharge is generated. Pulse ion is evenly implanted from the periphery by applying the pulse high voltage to a work 9 dipped in the plasma. Consequently, ions can be implanted into the complicated shaped material, and plasma can be formed with one power supply. Furthermore, the high dose ion can be implanted in a short time.

3. 发明专利

JPH10302658A ION SOURCE DEVICE 失效
公开(公告)号：JPH10302658A
公开(公告)日：1998-11-13
申请号：JP10757097
申请日：1997-04-24
申请人： KOBE STEEL LTD
发明人： MUNEMASA ATSUSHI , KUMAKIRI TADASHI , ADACHI SHIGETO
IPC分类号： H01J27/08 , H01J37/08
摘要： PROBLEM TO BE SOLVED: To provide an ion source device whose cost is lower than expenses required for insulation tube body replacement caused by insulation deterioration of the insulation tube body, hence operation cost, by preventing contamination of the insulation tube body of the ion source device. SOLUTION: This device is made up such that a first electrode 1 and a second electrode 2 are disposed in order along the extraction direction of ions in order to extract ions generated in an arc chamber, that an insulation tube body 4 is provided between respective peripheral edges of these electrodes 1, 2, and that the two electrodes 1, 2 are fixed thereto. In this event, a gap being provided inside the insulation tube body 4, an insulating inner tube body 9 being disposed therein, this insulating inner tube body 9 being fixed to the insulation tube body 4 via an insulation member 10, a gap d1 being provided between the insulating inner tube body 9 and the first electrode 1 while a gap d2 between the insulating inner tube body 9 and the second electrode 2, the gap d1 and the gap d2 are each adapted to keep such a distance as not to cause spatial electric breakdown.

4. 发明专利

JPH062118A DYNAMIC MIXER 失效
公开(公告)号：JPH062118A
公开(公告)日：1994-01-11
申请号：JP15706592
申请日：1992-06-16
申请人： KOBE STEEL LTD
发明人： KUMAKIRI TADASHI , MUNEMASA ATSUSHI , INUISHI NORIYUKI
IPC分类号： C23C14/32 , C23C14/24 , C23C14/48
摘要： PURPOSE:To stably form a uniform coating film on a material to be treated of intricate shape by making the metal ion beam source and metal vaporization source in the dynamic mixer of an arc discharge system. CONSTITUTION:A material 27 to be treated impressed with a negative bias voltage by a power source 29 is fixed on a turntable 28 in a vacuum vessel 26 and rotated, an arc discharge is generated between an Al cathode 42 and a trigger electrode 43 in an ion beam source 30 by a power source 41, and hence the Al constituting the cathode 42 is vaporized, ionized, accelerated by an electrode 44 and injected into the material 27. Menwhile, an arc discharge is generated between a Ti target 36 and an anode 37 by a power source 35 in a metal vaporization source 31 with Ti, etc., as the targets, and the generated Ti vapor is injected into the negative-potential material 27 to form a Ti-Al coating film on the surface. When a ceramic coating film is formed, a reactive gas ion source of nitrogen, etc., is provided in the vessel to form an AlTiN ceramic coating film.

5. 发明专利

JPH0445262A VACUUM ARC VAPOR-DEPOSITION DEVICE 失效
公开(公告)号：JPH0445262A
公开(公告)日：1992-02-14
申请号：JP15311290
申请日：1990-06-12
申请人： KOBE STEEL LTD
发明人： AKARI KOUICHIROU , KUMAKIRI TADASHI , MUNEMASA ATSUSHI
IPC分类号： C23C14/24
摘要： PURPOSE:To form an excellent deposited film free of vaporized particles by the vacuum arc vapor-deposition device by leading the plasma produced from an arc spot on the circular surface of a cylindrical arc vaporization source onto a substrate arranged orthogonally to the center axis of the source. CONSTITUTION:A cylindrical arc vaporization source 2 with only its periphery used as the vaporization surface 3 is connected to the cathode side of an arc power source 9 through a cathode holder 8. A cylindrical anode 4 connected to the anode side of the power source 9 is concentrically arranged in front of the source 2, and the substrate 5 is set orthogonally to the center axis X of the source 2. Under such a constitution, a vacuum arc discharge is generated between both electrodes by the power source 9, hence an air-core coil 6 is excited, and a line M of magnetic force is formed almost in parallel with the vaporization surface 3. Consequently, most of the molten particles generated from the source 2 do not arrive at the substrate 5, and an excellent film is formed with good productivity by vacuum arc vaporization.

6. 发明专利

JPH02270961A SPLIT AND ASSEMBLED TARGET FOR COATING INNER SURFACE OF BENT PIPE BY SPUTTERING 失效
公开(公告)号：JPH02270961A
公开(公告)日：1990-11-06
申请号：JP9102889
申请日：1989-04-10
申请人： KOBE STEEL LTD
发明人： MUNEMASA ATSUSHI , KUMAKIRI TADASHI , AKARI KOUICHIROU
IPC分类号： C23C14/34
摘要： PURPOSE:To coat the inner surface of a bent pipe with a film in uniform thickness distribution by assembling the intermediate split target elements having a circular cross section and a trapezoidal side surface in conformity to the curve of the bent pipe. CONSTITUTION:A thin film is formed on the inner surface of a 90 deg. bent pipe 1 by sputtering. Accordingly, the plural intermediate split target elements 2a-2e having a circular cross section of the same diameter and a trapezoidal side surface are connected. Meanwhile, terminal targets 4a and 4e having a rectangular side surface are joined to the intermediate split targets 2a and 2e by connecting screws 6 and 7 at the center of the cross section. The targets are thus assembled in conformity to the curve of the bent pipe 1 into a shape occupying practically the center line of the inner surface in the bent pipe 1. By this method, the inner surface of the bent pipe is coated with a thin film resistant to corrosion and wear in a short time.

7. 发明专利

JPH01255668A FORMATION OF FILM USING COAXIAL MAGNETRON SPUTTERING DEVICE 失效
公开(公告)号：JPH01255668A
公开(公告)日：1989-10-12
申请号：JP8190388
申请日：1988-04-01
申请人： KOBE STEEL LTD
发明人： MUNEMASA ATSUSHI , KUMAKIRI TADASHI , AKARI KOUICHIROU
IPC分类号： C23C14/36 , C23C14/34
摘要： PURPOSE:To form a composite film in a relatively short time with no need to complicate and enlarge the structure of a device itself by composing a tubular target of annular split pieces having different compositions in the axial direction, and moving a group ot permanent magnets arranged at the axial center of the target in the axial direction. CONSTITUTION:The positions of a group 6 of permanent magnets are adjusted so that a magnetic field region H formed by the permanent magnets 6a, 6b, 6c,... as shown in figure (a) and vertical to an electric field E is placed at the central part of each annular split pieces 11a in the axial direction. In the succeeding sputtering, only the central part of each split piece 11a is sputtered, and the sputtered particles Q are deposited on a substrate 4 to form a coating film 15a. A coating film 15b having the same composition as the split piece 11b is formed as shown in figure (b) on the coating film 15a. Namely, the permanent magnet group 6 is moved an appropriate distance at an appropriate time when sputtering is stopped so that the magnetic field region H formed by each permanent magnet and vertical to the electric field E is placed at the central part of each split piece 11b in the axial direction, and the coating film 15b is formed on the coating film 15a.

8. 发明专利

JPS63227773A FORMATION OF FILM BY SPUTTERING 失效
公开(公告)号：JPS63227773A
公开(公告)日：1988-09-22
申请号：JP5989087
申请日：1987-03-14
申请人： KOBE STEEL LTD
发明人： MAEDA YASUSHI , KUMAKIRI TADASHI , AKARI KOUICHIROU , MUNEMASA ATSUSHI
IPC分类号： C23C14/34
摘要： PURPOSE:To make the thickness and compsn. of a film uniform by arranging chemically different plural unit targets to form a rod target for sputtering, relatively rotating the target at the center of a tubular base materials in the axial center and carrying out sputtering. CONSTITUTION:A rod target 5 for sputtering is formed by arranging chemically different plural unit targets 5a, 5b in the longitudinal direction so that they are insulated from each other. While the target 5 is relatively rotated at the center of a tubular base material 4 in the axial center, sputtering is carried out to form a film on the inside of the base material 4.

9. 发明专利

JPS63223168A TARGET FOR SPUTTERING 失效
公开(公告)号：JPS63223168A
公开(公告)日：1988-09-16
申请号：JP5580987
申请日：1987-03-11
申请人： KOBE STEEL LTD
发明人： KUMAKIRI TADASHI , MAEDA YASUSHI , AKARI KOUICHIROU , MUNEMASA ATSUSHI
IPC分类号： C23C14/34
摘要： PURPOSE:To easily realize a cylindrical target and to permit effective sputtering, by using split pieces having coupling edges in the direction oblique with the plane orthogonal with the axial center to assemble the target. CONSTITUTION:The target is so constituted that the entire part has a cylindrical shape by alternately laminating the annular split pieces 10a, 10b having the coupling edges 20 in the direction oblique with the plane orthogonal with the axial center of the target in a manner as to connect the coupling edges 20 to each other thereby assembling the target. The adjacent split pieces 10a, 10b are constituted by varying the component compsns. with each other. This target is disposed on a target supporting material 5 and spacers 21, 22 are disposed on the top and bottom end part sides which are then pressed and fixed. The easy assembly of the cylindrical target is thereby permitted even if materials having poor workability are used. Effective sputtering is thus permitted.

10. 发明专利

JP2008114418A Resin sealing mold for electronic component 有权
标题翻译：电子元件的树脂密封模具
公开(公告)号：JP2008114418A
公开(公告)日：2008-05-22
申请号：JP2006298031
申请日：2006-11-01
申请人： Craft Techno:Kk , Kobe Steel Ltd , Towa Corp , Towa株式会社 , 有限会社クラフトテクノ , 株式会社神戸製鋼所
发明人： KAWAMOTO YOSHIHISA , SAEKI KAORU , AKARI KOUICHIROU , KUMAKIRI TADASHI
IPC分类号： B29C33/38 , B29K63/00 , B29L31/34 , H01L21/56
摘要： PROBLEM TO BE SOLVED: To provide a resin sealing mold for an electronic component which makes various resin materials (including a strong adhesion sealing material) satisfy both mold release properties and corrosion resistance of the mold and form the surface treatment layer of the mold enough in consideration of environmental problems.
SOLUTION: By forming a chromium carbide film A (surface treatment layer) in a necessary place of each of the surfaces of these molds 1 and 2 by depositing (surface treatment) by a vacuum film depositing method, the resin sealing molding of the electronic component 5 set on a substrate 6 can be carried out in mold cavities 3 and 4.
COPYRIGHT: (C)2008,JPO&INPIT

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式