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    • 10. 发明专利
    • PREPARATION OF HIGH-PURITY SILICON NITRIDE FROM FERROSILICON
    • JPS5841707A
    • 1983-03-11
    • JP13970581
    • 1981-09-07
    • NIPPON KOKAN KK
    • TAKAHATA KENJINAKAGAWA KEIICHISHIMOMURA HIROAKIKATOU YOSHINORI
    • C01B33/00C01B21/068C01B21/082C30B29/62
    • PURPOSE:To prepare high-quality Si3N4 inexpensively, by putting fine powder of ferrosilicon in a container, sending it to a vacuum furnace, closing the furnace, introducing an N2 gas into the furnace under a specific condition, cooling it slowly after a given time. CONSTITUTION:Fine powder of low-quality ferrosilicon having >= about 200mesh is put in the containers 2, the containers are piled on plural steps on the truck 3, and it is sent to the vacuum furnace 1. The furnace 1 is closed and evacuated by the exhaust pipe 4 at the normal temperature as it is. Electricity is applied to the electrode bars 5 made of graphite set at regular intervals, the furnace is heated upto a fixed temperature, the evacuation is stopped, and the temperature is raised upto about 1350 deg.C. When the inner pressure in the furnace is made higher than a given pressure, an N2 gas is introduced from the pipe 6, the furnace is returned to the normal pressure, and the furnace is maintained in this condition for a fixed time. The electricity is stopped, the furnace is allowed to stand and cooled, the whisker Si3N4 7 is formed on the furnace wall, the electrode bars 5, the truck 3, etc. in the furnace, and it is collected. After these operations are repeated for several times, the remaining substance in the container 2 is recovered as ferrosilicon.