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    • 8. 发明专利
    • METHOD FOR FORMING RESIST PATTERN
    • JPH11233409A
    • 1999-08-27
    • JP3145498
    • 1998-02-13
    • NIPPON KOKAN KK
    • HOTTA EISUKESAITO HIROMICHI
    • G03F7/20H01L21/027
    • PROBLEM TO BE SOLVED: To reduce the photo-processing time at the time of forming a resist pattern, by-applying a photosensitive material onto a wafer, then carrying out exposure with the internal environment of an aligner held at a higher temperature than at the room temperature, and then carrying out development. SOLUTION: After a wafer is heated, a resist 2 is applied on the rotating wafer 1 by a coater using a spin coat method. Next, exposure is carried out with the internal environment of an aligner held at a high temperature, thus transferring a circuit pattern 3 of a reticle to the resist 2. Subsequently, after development is carried out by a developer, heating is carried out to remove the resist on the exposed portion, thus forming a resist pattern 4. It is preferred that the internal environment of the aligner is held at 90-110 deg.C. According to such a method for forming a resist pattern, since the wafer inside the aligner is held at a higher temperature than the room temperature, heating of the wafer after resist coating and before development can be made unnecessary. As a result, the photo-processing time can be reduced.