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    • 10. 发明专利
    • Designating method of defective minor loop of magnetic bubble memory
    • 磁性气泡记忆缺陷小环的指定方法
    • JPS59168985A
    • 1984-09-22
    • JP4211283
    • 1983-03-16
    • Hitachi Ltd
    • ANDOU TETSUYASHIDA KOUJI
    • G11C11/14
    • G11C11/14
    • PURPOSE:To obtain a magnetic bubble memory device low in error rate and high in reliability by designating minor loops adjacent to checked-out defective minor loop as defective minor loops. CONSTITUTION:For minor loops 1-n-1, n, n+1-m, those circle marks shown in a figure are designated as normal minor loops, and cross marks are designated as defective minor loops. This way of designation is to designate, in addition to a defective minor loop (n) checked out by examination, two adjacent minor loops n-1 and n+1 as defective minor loops. By such a way of designation of minor loops, those minor loops which may heighten the error rate are skipped as defective minor loops and not used. Accordingly, the error rate of the device becomes low and the reliability is made high.
    • 目的:为了获得低错误率和可靠性高的磁性气泡记忆装置,通过指定与检出缺陷的小环相邻的小环作为有缺陷的小环。 构成:对于小环1-n-1,n,n + 1-m,图中所示的那些圆标记被指定为普通次级环,并且交叉标记被指定为有缺陷的小环。 这种指定方式除了通过检查检出的有缺陷的小环(n)之外,指定两个相邻的小环n-1和n + 1作为有缺陷的小环。 通过这种小循环的指定方式,可以将可能提高错误率的那些次要循环作为有缺陷的小循环被跳过而不被使用。 因此,装置的错误率变低,可靠性提高。