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1. 发明专利

JP2000277397A ELECTRIC FIELD ACTIVATING METHOD FOR ELECTRIC DOUBLE- LAYER CAPACITOR 失效
公开(公告)号：JP2000277397A
公开(公告)日：2000-10-06
申请号：JP8124199
申请日：1999-03-25
申请人： NGK INSULATORS LTD , OKAMURA KENKYUSHO KK
发明人： ARAI YUSUKE , KATSUKAWA HIROYUKI , YOSHIDA HITOSHI , OKAMURA MICHIO
IPC分类号： H01G11/00 , H01G11/22 , H01G11/34 , H01G11/38 , H01G11/42 , H01G11/44 , H01G11/86 , H02J7/10 , H01G9/155 , H01G9/058
摘要： PROBLEM TO BE SOLVED: To improve capacitance density, even when using the same polarized electrode by optimizing the first charging conditions. SOLUTION: In this electric field activating method of an electric double-layer capacitor, with at least one kind of alkaline metal and alkaline metal compound, a polarization electrode 26 formed by using a carbon material that is heat- treated at a temperature or higher temperature, where the vapor of the alkaline metal is generated as a main material is dipped into an organic electrolyte. Constant-current charging in the first charging is made by a current which is lower than that being actually used, and/or in the first charging, the constant- current charging is carried out until a prescribed voltage that is equal to or less than an actual-use voltage and at the same time, is equal to or less than the decomposition voltage of the electrolyte is achieved for performing the constant-voltage charging until relaxation voltage becomes sufficiently small at the prescribed voltage.

2. 发明专利

JP2000277390A ELECTRIC DOUBLE-LAYER CAPACITOR 失效
公开(公告)号：JP2000277390A
公开(公告)日：2000-10-06
申请号：JP7941899
申请日：1999-03-24
申请人： NGK INSULATORS LTD
发明人： ARAI YUSUKE , KATSUKAWA HIROYUKI , YOSHIDA HITOSHI
IPC分类号： H01G11/22 , H01G11/32 , H01G11/34 , H01G11/38 , H01G11/44 , H01G11/54 , H01G11/78 , H01G11/80 , H01G11/84 , H01G11/86 , H01G9/058
摘要： PROBLEM TO BE SOLVED: To provide an electric double-layer capacitor composed by dipping a polarization electrode indicating large capacitance formed mainly by using a carbon material with a structure body made of microcrystal carbon similar to graphite into an organic electrolyte. SOLUTION: In the electric double-layer capacitor, a polarization electrode composed mainly of carbon materials 90 and 92 is dipped into an organic electrolyte, the carbon materials 90 and 92 have a structural body 96 made of mirocrystal carbon 94 similar to graphite, the organic electrolyte is decomposed by a first charging, coating is formed on the surface of the structure body 96 and/or at a gap part 98 between the structural bodies 96, and an electric double-layer is formed in the coating for allowing capacitance to manifest itself.

3. 发明专利

JPH08266876A PRODUCTION OF GAS SEPARATING BODY 失效
公开(公告)号：JPH08266876A
公开(公告)日：1996-10-15
申请号：JP9432195
申请日：1995-03-28
申请人： NGK INSULATORS LTD
发明人： SAKAI OSAMU , NAKAMURA SHINJI , KAWAE TAKAYUKI , YOSHIDA HITOSHI
IPC分类号： B01D53/22 , B01D71/02 , C01B3/50
摘要： PURPOSE: To prevent the generation of pinholes in a gas separation membrane in the case of producing the gas separating body having a porous substrate and a gas separation membrane covering the substrate by substantially removing org. matter from the surface of the porous substrate and then forming a gas separation membrane on the substrate. CONSTITUTION: When a gas separating body is formed, a porous substrate is dipped in water and irradiated with an ultrasonic wave for about one hour, the process is repeated five times, and then the substrate is allowed to stand in a drier and dried. The substrate is then allowed alternately to directly hit an aq. hydrochloric acid soln. of palladium chloride and an aq. hydrochloric acid soln. of tin chloride and nucleated. The substrate is then electroless-plated by using a plating soln. contg. a metal such as palladium and a reducing agent in the chemical plating stage to coat the nucleated plane with the metal. The substrate is then electroplated with silver and kept at about 900 deg.C for 2hr in an electric furnace, hence the palladium and silver are alloyed by the mutual diffusion, and the gas separating body is completed.

4. 发明专利

JPH0585732A PRODUCTION OF BI-BASE SUPERCONDUCTOR 失效
公开(公告)号：JPH0585732A
公开(公告)日：1993-04-06
申请号：JP25199391
申请日：1991-09-30
申请人： NGK INSULATORS LTD
发明人： SAKAI HITOSHI , YOSHIDA HITOSHI
IPC分类号： C01G1/00 , C01G29/00 , H01B12/06 , H01B13/00
摘要： PURPOSE:To provide a Bi-base superconductor having excellent superconducting characteristics and high surface smoothness independently of the thickness especially even in case of a large thickness. CONSTITUTION:When a Bi-base superconductor is produced, a Bi-base superconducting molded body to be fired is mounted on a firing support at the time of firing including a partial melting process and a temp. gradient is formed so that the temp. of the bottom of the molded body brought into contact with the support is increased toward the top. The molded body is fired and then cooled.

5. 发明专利

JPH0524828A RARE EARTH-BASED OXIDE SUPERCONDUCTOR, PRODUCTION THEREOF AND RAW MATERIAL MIXED POWDER 失效
公开(公告)号：JPH0524828A
公开(公告)日：1993-02-02
申请号：JP20002791
申请日：1991-07-15
申请人： KOKUSAI CHODENDO SANGYO GIJUTS , NGK INSULATORS LTD
发明人： YOSHIDA HITOSHI , SAKAI HITOSHI
IPC分类号： C01G1/00 , C01G3/00 , H01B12/00 , H01B13/00 , H01L39/24
摘要： PURPOSE:To produce rare earth-based oxide superconductor showing an excellent critical current density even in a high magnetic field by using the conventional fusion method in which operation is simple. CONSTITUTION:Rare earth-based oxide superconductors produced by the fusion method and having a structure where submicron particles of one or more elements selected from Rh, Pt, Pd, Ru and Os are uniformly dispersed and contained in a BEBa2Cu3Oy, (BE represents Y, Gd, Dy, Ho, Er or Yb) oxide superconductor crystal in an amount of 0.01-5wt.% on element base.

6. 发明专利

JPH0477348A PRODUCTION OF BISMUTH-BASED SUPERCONDUCTOR 失效
公开(公告)号：JPH0477348A
公开(公告)日：1992-03-11
申请号：JP18754990
申请日：1990-07-16
申请人： NGK INSULATORS LTD
发明人： YOSHIDA HITOSHI , SAKAI HITOSHI
IPC分类号： C04B35/00 , C01G1/00 , C01G29/00 , C04B35/45 , H01B12/06 , H01B13/00 , H01L39/24
摘要： PURPOSE:To form a superconducting crystal phase with a good orientation property even in the case of a large-sized or a thick Bi-based superconductor by moving a local partial melt region from a specified direction to stepwise and continuously partially melt the whole region of the superconducting layer and crystallizing the whole region. CONSTITUTION:In the production of a bismuth-based superconductor by means of partial melting, the superconductor forming part is locally and partially melted under specified sintering conditions, the local and partial melt zone is continuously moved to partially melt the whole region of the superconductor forming part under the same sintering condition, and then the whole region is heat-treated. The partial melt zone is preferably moved so that the sintering condition is kept at 870-920 deg.C for a specified time. The partial melt region is generally kept for about 0.5-10hr.

7. 发明专利

JPH0459653A BISMUTH BASED SUPERCONDUCTOR AND PRODUCTION THEREOF 失效
公开(公告)号：JPH0459653A
公开(公告)日：1992-02-26
申请号：JP17292790
申请日：1990-06-29
申请人： NGK INSULATORS LTD
发明人： YOSHIDA HITOSHI
IPC分类号： C04B35/00 , C01G1/00 , C04B35/45 , H01B12/00 , H01L39/12
摘要： PURPOSE:To produce a Bi based superconductor having high critical current density (Jc) and good mechanical strength by partially melting and solidifying a surface part of Bi-containing compound oxide sintered compact and forming a high density layer in the surface part. CONSTITUTION:A mixed powder composition consisting of an element such as Bi, Sr, Ca or Cu or compound thereof is sintered to afford a Bicontaining compound oxide sintered compact capable of constituting Bi based superconductor of Bi-Sr-Ca-Cu-O oxide, etc. The surface part of the sintered compact is partially melted, then solidified. Thereby superconducting property is provided to the sintered compact and simultaneously a high-density layer is formed in the surface part. The above-mentioned partial melting can be carried out at about 880-930 deg.C for 5 min to 6hr. Thickness of the above-mentioned high-density layer is preferably about 100mum to 5mm. Thereby the aimed Bi based superconductor having high Jc and satisfied in mechanical strength is obtained.

8. 发明专利

JPH03215372A COMPOSITE MATERIAL OF BISMUTH-BASED SUPERCONDUCTOR AND METAL AND ITS PRODUCTION 失效
公开(公告)号：JPH03215372A
公开(公告)日：1991-09-20
申请号：JP543090
申请日：1990-01-13
申请人： NGK INSULATORS LTD
发明人： SAKAI HITOSHI , OSAWA YOSHIMI , YOSHIDA HITOSHI
IPC分类号： C04B37/02 , C01G1/00 , C01G29/00 , C04B35/45 , H01B12/06 , H01B13/00 , H01L39/24
摘要： PURPOSE:To obtain a composite material of a Bi-based superconductor and a metal, having excellent thermal shock resistance and exhibiting excellent bonding force between an intermediate layer and both of a metal substrate and a Bi-based superconducting layer by laminating a metal substrate, an intermediate layer consisting of a material similar to a Bi-based superconductor and a Bi-based superconducting layer. CONSTITUTION:The objective composite material of a Bi-based superconductor and a metal is produced by forming a Bi-based superconductor layer composed of Bi2Sr2CaCu2Ox, etc., on a metal substrate having a thickness of preferably about 500mum to 10mm and made or stainless steel, Ni alloy, etc., interposing the following intermediate layer between the superconducting layer and the metal layer and sintering the laminate. A part of total of the above intermediate layer has a melting point higher than that of the Bi-based superconductor and contains elements constituting the Bi-based superconductor. The above composite material has excellent superconductivity, is resistant to delamination even by repeatedly using at an extremely low temperature for attaining superconductivity and is free from the deterioration of the superconducting properties.

9. 发明专利

JPH02299295A SUPERCONDUCTIVE MAGNETIC SHIELD PLATE 失效
公开(公告)号：JPH02299295A
公开(公告)日：1990-12-11
申请号：JP12068689
申请日：1989-05-15
申请人： NGK INSULATORS LTD
发明人： WATANABE KEIICHIRO , YOSHIDA HITOSHI , SAKAI HITOSHI
IPC分类号： H05K9/00 , H01B12/06
摘要： PURPOSE:To obtain a superconductive magnetic shield plate which is able to shield an object from intensive magnetism by a method wherein the magnetic shield plate is formed into a two-layered structure composed of a superconductive layer and a board which supports the superconductive layer. CONSTITUTION:A superconductive magnetic shield plate of this design is composed of a board and a superconductive layer, and it is desirable that a protective layer provided outside the superconductive layer and moreover an intermediate layer provided between the board and the superconductive layer are added. In this case, it is desirable that the materials of the board and the superconductive layer are so selected as to make the thermal expansion coefficient of the board nearly identical to that of the superconductive layer, the superconductive layer is not required to be defined in kind, and any kind of a board which has a prescribed thermal expansion coefficient can be used for this purpose, and the board can be formed of various kinds of material such as metal material, ceramic material, and glass material. By this setup, a superconductive magnetic shield plate, which has such a shielding capacity that it can shields an object from an intensive magnetic field, can be obtained.

10. 发明专利

JPH02275779A SUPERCONDUCTING CERAMIC COMPOSITE MATERIAL 失效
公开(公告)号：JPH02275779A
公开(公告)日：1990-11-09
申请号：JP9720089
申请日：1989-04-17
申请人： NGK INSULATORS LTD
发明人： YOSHIDA HITOSHI , SAKAI HITOSHI , YOSHIDA MANABU , ODA TOSHIO
IPC分类号： G12B17/02 , C04B35/74 , G01R33/035 , H01B12/06 , H05K9/00
摘要： PURPOSE:To improve the mechanical strength a composite material without firmly bonding a ceramic with a metal by forming a superconducting ceramic on the surface and in the holes of a porous metal, etc., thereby integrating the metal with the ceramic. CONSTITUTION:A superconducting ceramic 2 is formed on the surface 4 and in the holes 5, 11 of porous metals 8, 10 or the ceramics 2 are connected with each other through the holes 6, 11. The ceramic is integrated 1 with the above porous metal 3.

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