专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

JPH01153262A MIRROR FINISHING METHOD 失效
公开(公告)号：JPH01153262A
公开(公告)日：1989-06-15
申请号：JP31250487
申请日：1987-12-10
申请人： MITSUBISHI METAL CORP , NIPPON SILICONE KK
发明人： SHIMANUKI YASUSHI , KISHIMOTO MIKIO
IPC分类号： H01L21/304 , B24B37/00 , H01L21/306
摘要： PURPOSE:To enable the surface of a workpiece to be polished into a satisfactory mirror surface for a short time by using specified aqueous solution for abrasives. CONSTITUTION:A wafer (a kind of workpieces) like silicon and a polishing machine are slid while abrasives are supplied to the surface of wafer to mirror polish said surface. Then, aqueous solution containing 0.05-0.2wt.% of aqueous amine, 0.05-1.0wt.% of abrasive grains, pure water and residue are used for abrasives. By setting thus the concentration of abrasive grains to 0.05-1.0wt.% can be reduced the damage of the surface of wafer due to the abrasive grains. Further, by setting the concentration of aqueous amine to 0.05-0.2wt.% can be intensified the solving action of aqueous amine, so that a wafer polishing time can be shortened.

2. 发明专利

JPH01193170A SPECULAR FACE GRINDING/POLISHING METHOD 失效
公开(公告)号：JPH01193170A
公开(公告)日：1989-08-03
申请号：JP1630988
申请日：1988-01-27
申请人： MITSUBISHI METAL CORP , NIPPON SILICONE KK
发明人： SHIMANUKI YASUSHI , KISHIMOTO MIKIO
IPC分类号： H01L21/304 , B24B37/00
摘要： PURPOSE:To perform specular face grinding/polishing work at a material to be ground in a good manner by removing oxide film on the material with grinding particles in a first grinding liquid supplied at the starting time of grinding, and grinding this surface through dissolving action by a soluble amine in a second grinding liquid as well as removing action by a grinding machine. CONSTITUTION:In specularly grinding the surface of a wafer made of silicone to be ground by relatively making the wafer and a grinding machine slide, upon start-up of grinding, a first grinding liquid including grinding particles is supplied to the wafer surface, and the particles remove oxide film on the wafer surface. Next, onto the wafer surface, a second grinding liquid composed of pure water and soluble amine, and including no grinding particles is supplied. The wafer surface is then well ground in a mirror face manner without damage layer with the dissolbing action of this amine as well as the removing action of the grinding machine.

3. 发明专利

JPS5913480B2 JPS5913480B2 - 失效
公开(公告)号：JPS5913480B2
公开(公告)日：1984-03-29
申请号：JP15262478
申请日：1978-12-12
申请人： Mitsubishi Metal Corp
发明人： SUGA FUKUHIKO , TOMIZAWA KENJI , UMEHARA MIZUHIRO , ASAKUSA KAZUTOSHI , KISHIMOTO MIKIO
IPC分类号： C30B27/02 , C30B15/00 , C30B29/40 , H01L21/18 , H01L21/208

4. 发明专利

JPS5934637A Preventive method for warpage of indium phosphide wafer 失效
标题翻译：预防磷化氢波形的预防方法
公开(公告)号：JPS5934637A
公开(公告)日：1984-02-25
申请号：JP14438982
申请日：1982-08-20
申请人： Mitsubishi Metal Corp
发明人： MIYAIRI HIROO , TAKAHASHI AKIO , KISHIMOTO MIKIO
IPC分类号： C23F1/30 , H01L21/02 , H01L21/306
CPC分类号： H01L21/306
摘要： PURPOSE:To reduce th warpage by removing a surface damage layer through etching prior to mirror polishing regarding the wafer after cutting. CONSTITUTION:A crystal of indium phosphide after cutting is etched by using an etchent of a nitric acid-hydrochloric acid group solution or a 3% bromine- methanol solution in order to remove the surface damage layer on cutting prior to the mirror polishing of the indium phosphide wafer. A ratio of water : nitric acid : hydrochloric acid is kept within a range of 12:7:1-3:1:1 in the nitric acid- hydrochloric acid group solution, a range of a heating temperature is kept at 70- 80 deg.C and etching time is kept for 5-7min as the conditions of the etchent, and the crystal is etched with extremely excellent uniformity. When hydrochloric acid is used in quantity more than said ratio or more to nitric acid, a phosphorus element starts its decomposition at approximately 50 deg.C. Etching is too strong on heating when a ratio of nitric acid is high, and in that case, an etching rate is difficult to be controlled.
摘要翻译：目的：通过在切割之后的晶片抛光之前通过蚀刻去除表面损伤层来减少翘曲。构成：通过使用硝酸 - 盐酸组溶液或3％溴 - 甲醇溶液等来蚀刻切割后的磷化铟晶体，以便在对铟进行镜面抛光之前去除切割时的表面损伤层磷化晶片。在硝酸 - 盐酸溶液中，水：硝酸：盐酸的比例保持在12：7：1-3：1：1的范围内，加热温度范围保持在70-80度蚀刻时间保持为5-7分钟，作为等离子体的条件，并且以非常优异的均匀性蚀刻晶体。当盐酸的使用量超过硝酸比例时，磷元素在约50℃开始分解。当硝酸的比例高时，在加热时蚀刻过强，在这种情况下，难以控制蚀刻速率。

5. 发明专利

JPS5580796A METHOD AND DEVICE FOR GROWING HIGH DISSOCIATION PRESSURE COMPOUND SINGLE CRYSTAL FOR SEMICONDUCTOR BY DOUBLEESEALED MELT PULLING METHOD 失效
公开(公告)号：JPS5580796A
公开(公告)日：1980-06-18
申请号：JP15262478
申请日：1978-12-12
申请人： MITSUBISHI METAL CORP
发明人： SUGA FUKUHIKO , TOMIZAWA KENJI , UMEHARA MIZUHIRO , ASAKUSA KAZUTOSHI , KISHIMOTO MIKIO
IPC分类号： C30B27/02 , C30B15/00 , C30B29/40 , H01L21/18 , H01L21/208
摘要： PURPOSE:To enhance the crystallinity of the title single crystal and reduce the cost by housing a lower portion of a pulling shaft, a crucible and an upper portion of a rotating shaft in a core tube and double-sealing a high dissociation press. cpd. melt in the crucible by a specified method. CONSTITUTION:Quartz crucible 2, a lower portion of rotary pulling shaft 6 and an upper portion of rotating shaft 9 are housed in core tube 20 set on vertically movable driving stand 19 in metallic container 1 for growing a known single crystal such as GaAs provided with main- and after-heaters 7, 3, etc. The top of tube 20 is sealed with interlocked Mo cover 4 contg. molten B2O3 5, and the bottom with similar cover 21. The surface of molten GaAs in crucible 2 is coated with B2O3 melt 16. To receive molten B2O3 flowing from covers 4, 21, pans 17, 24 made of Mo or the like are attached. As a result, a conventional trouble due to deposition of GaAs or the like on the inside of the heated wall is prevented, resulting in no hindrance in crystallinity and enhanced productivity.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式