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    • 1. 发明专利
    • Preparation of fine powdery silicon nitride
    • 精细粉末硅氮化物的制备
    • JPS61117108A
    • 1986-06-04
    • JP23803484
    • 1984-11-12
    • Mitsubishi Gas Chem Co Inc
    • SUZUKI TAKASHIKAWAKAMI TAKAMASAKOYAMA GOJIISAKI HIROMASANAKANORI AIKO
    • C01B21/068
    • PURPOSE: To obtain amorphous or partly crystalline fine powdery silicon nitride having high purity by allowing an organosilicon compd. contg. no halogen nor oxygen to cause gaseous phase reaction in the atmosphere of inert gas or nonoxidizing gas.
      CONSTITUTION: A silane compd. or polysilane compd. having SiH bonds and being expressed by the formula (I) (wherein at least one of Rs is H and the rests are H, alkyl, allyl, phenyl with the proviso that all Rs are not H simultane ously; n is 1W4) or a polysilane compd. or polycarbosilane compd. expressed by the formula (I), or a polysilane compd. having SiH bonds and expressed by the formula (II) (wherein at least one among Rs is H and the rests are H, alkyl, phenyl: R' is methylene, ethylene, or phenylene; m is 1 or 2) is allowed to cause vapor phase reaction in the presence of NH
      3 , to obtain desired silicon carbide fine powder.
      COPYRIGHT: (C)1986,JPO&Japio
    • 目的:通过使有机硅化合物获得具有高纯度的无定形或部分结晶的细粉状氮化硅。 对比 无卤素或氧气在惰性气体或非氧化气体气氛中引起气相反应。 构成:硅烷化合物 或聚硅烷化合物 具有SiH键并由式(I)表示(其中Rs中的至少一个为H,其余为H,烷基,烯丙基,苯基,条件是所有Rs不同时为H; n为1-4) 或聚硅烷化合物。 或聚碳硅烷化合物 由式(I)表示,或聚硅烷化合物。 具有SiH键并由式(II)表示(其中Rs中的至少一个为H,其余为H,烷基,苯基:R'为亚甲基,亚乙基或亚苯基; m为1或2) 在NH 3存在下进行气相反应,得到所需的碳化硅细粉末。
    • 2. 发明专利
    • Crystalline aluminosilicate composition
    • 水晶铝酸盐组合物
    • JPS58213628A
    • 1983-12-12
    • JP9736282
    • 1982-06-07
    • Mitsubishi Gas Chem Co Inc
    • SUZUKI TAKASHIHASHIMOTO SHIYOUICHIROUNAKANO RIAKOOSAKU MASAMI
    • C07C1/20B01J20/18B01J29/00C01B39/04C07C1/00C07C67/00
    • PURPOSE: To provide a crystalline aluminosilicate composition containing transition elements, giving seven diffraction lines each having specific lattice spacing and specific relative intensity in the X-ray diffraction pattern, and able to be easily regenerated and activated after using as a catalyst.
      CONSTITUTION: A crystalline aluminosilicate composition containing transition elements, and giving seven diffraction lines exhibiting the lattice spacings and relative intensities shown in the table in the X-ray diffraction pattern (the relative intensity is given by taking the intensity of either diffraction line corresponding to the lattice spacing of 10.0±0.4 or 3.83±0.05Å as 100). The composition is useful as an adsorbent or a catalyst. When it is used as a catalyst, it can be easily regenerated and activated by heating at a temperature considerably lower than the spontaneous ignition point of the tar deposited on the catalyst (about 530°C), e.g. at 380°C. The composition can be prepared, e.g. by adding a transition element compound or a transition metal to the aqueous raw material mixture liquid for the preparation of crystalline aluminosilicate.
      COPYRIGHT: (C)1983,JPO&Japio
    • 目的:提供含有过渡元素的结晶硅铝酸盐组合物,在X射线衍射图中给出七个具有特定晶格间距和特定相对强度的衍射线,并且能够在使用催化剂之后容易地再生和活化。 构成:含有过渡元素的结晶硅铝酸盐组合物,并且在X射线衍射图中给出表现出表格所示的晶格间距和相对强度的七条衍射线(相对强度通过取相应于 10.0 +或-0.4或3.83+或-0.05Ang的晶格间距为100)。 该组合物可用作吸附剂或催化剂。 当其用作催化剂时,可以通过在显着低于沉积在催化剂(约530℃)的焦油的自发点上的温度下加热而容易地再生和活化。 在380摄氏度 组合物可以制备,例如 通过向用于制备结晶硅铝酸盐的原料混合液中加入过渡元素化合物或过渡金属。
    • 3. 发明专利
    • Production of fine silicon carbide powder
    • 精细碳化硅粉的生产
    • JPS6144708A
    • 1986-03-04
    • JP16538784
    • 1984-08-07
    • Mitsubishi Gas Chem Co Inc
    • SUZUKI TAKASHIKAWAKAMI TAKAMASAKOYAMA GOJIISAKI HIROMASANAKANO RIAKO
    • C01B31/36
    • PURPOSE: To obtain efficiently fine silicon carbide powder of high purity in a short time, by heat-treating fine powder prepared by reacting an alkoxysilane compound in the vapor phase in a nonoxidizing atmosphere.
      CONSTITUTION: An alkoxysilane compound expressed by the formula (R is chlorine, bromine, iodine, hydrogen, alkyl, allyl or phenyl; R' is alkyl, allyl or phenyl; n is 0, 1, 2 or 3), e.g. tetramethoxysilane or dimethyldimethoxysilane, is prepared. The resultant alkoxysilane compound is then preheated in a preheater and gasified, and the formed gas is mixed with a nonoxidizing gas, e.g. Ar or N
      2 , introduced into a reaction tube and reacted in the vapor phase at about 800W1,500°C. The formed fine powder is then cooled and collected. The resultant fine powder is heat-treated at about 1,350W1,850°C in a nonoxidizing atmosphere, e.g. hydrogen or argon, and crystallized to afford the aimed fine silicon carbide powder.
      COPYRIGHT: (C)1986,JPO&Japio
    • 目的:为了在短时间内获得高纯度的高纯度碳化硅粉末,通过对在非氧化气氛中的气相中的烷氧基硅烷化合物进行反应而制备的细粉进行热处理。 构成:由式(R为氯,溴,碘,氢,烷基,烯丙基或苯基; R'为烷基,烯丙基或苯基; n为0,1,2或3)表示的烷氧基硅烷化合物。 四甲氧基硅烷或二甲基二甲氧基硅烷。 然后将所得的烷氧基硅烷化合物在预热器中预热并气化,并将形成的气体与非氧化气体,例如, Ar或N2引入反应管中并在气相中在约800-1,500℃反应。 然后将形成的细粉末冷却并收集。 所得细粉末在非氧化气氛中,例如约1350-18850℃热处理。 氢气或氩气,并结晶,得到目标细小的碳化硅粉末。
    • 5. 发明专利
    • Production of silicon nitride fine powder
    • 生产氮化硅精粉
    • JPS6163506A
    • 1986-04-01
    • JP18421384
    • 1984-09-03
    • Mitsubishi Gas Chem Co Inc
    • SUZUKI TAKASHIKAWAKAMI TAKAMASAKOYAMA GOJIISAKI HIROMASANAKANORI AIKO
    • C01B21/068
    • C01B21/068C01P2002/02C01P2004/32C01P2004/62C01P2004/82
    • PURPOSE: To improve operation properties and long-term operating characteristics, and to reduce an amount of ammonium chloride as a by-product, by reacting a specific organosilicon compound in the presence of ammonia in a gaseous phase.
      CONSTITUTION: An organosilicon compound shown by the formula is used as a raw material. In the formula, R is alkyl group, phenyl group, vinyl group, allyl group, etc., and n is 1, 2, or 3. CH
      3 SiCl
      3 , (CH
      3 )
      2 SiCl
      2 , (CH
      3 )
      3 SiCl, etc. may be cited as the compound shown by the formula. The organosilicon compound is reacted with ammonia in the presence of an inert gas such as hydrogen, nitrogen, argon, helium, etc. or in a nonoxidizing gas atmosphere in a gaseous phase, to produce silicon nitride powder.
      COPYRIGHT: (C)1986,JPO&Japio
    • 目的:为了提高操作性能和长期运行特性,并通过在氨气存在下在气相中使特定的有机硅化合物反应来减少副产物中的氯化铵的量。 构成:将由式表示的有机硅化合物用作原料。 在该式中,R是烷基,苯基,乙烯基,烯丙基等,n是1,2或3.可以列举CH 3 SiCl 3,(CH 3)2 SiCl 2,(CH 3)3 SiCl等等 化合物如下式所示。 有机硅化合物在惰性气体例如氢气,氮气,氩气,氦气等存在下或在非氧化性气体气氛中在气相中与氨反应,生成氮化硅粉末。
    • 6. 发明专利
    • Manufacture of silicon nitride fine powder
    • 硅酸盐粉末的制造
    • JPS6140805A
    • 1986-02-27
    • JP16359484
    • 1984-08-03
    • Mitsubishi Gas Chem Co Inc
    • SUZUKI TAKASHIKAWAKAMI TAKAMASAKOYAMA GOJIISAKI HIROMASANAKANO RIEKO
    • C01B21/068
    • PURPOSE: To manufacture efficiently silicon nitride fine powder by subjecting alkoxysilane compds. to a gas phase reaction and heat-treating the obtained fine powder in the nonoxidizing atmosphere.
      CONSTITUTION: (i) Alkoxysilane (e.g. tetraethoxylsilane) shown by a formula (R is chlorine, bromine, iodine, alkyl group plus phenyl group and R' is alkyl group, allyl group plurs phenyl group and (n) is 0, 1, 2 plus 3) is heated and decomposed at abut 800W1,500°C under the presence of gas such as Ar and H
      2 to form the amorphous particles of about ≥0.5μ particle size (about 28.6W70wt% carbon amount) consisting essentially of silicon dioxide and carbon. Then (ii) the above- mentioned particles are calcined at about 1,000W1,700°C for about 0.5W15hr in the atmosphere of nonoxidizing gas contg. N
      2 and NH
      3 or the like to manufacture silicon nitride fine powder remarkably large in the proportion of α phase.
      COPYRIGHT: (C)1986,JPO&Japio
    • 目的:通过对烷氧基硅烷化合物进行处理,有效地制造氮化硅细粉。 进行气相反应,并在非氧化气氛中对得到的细粉末进行热处理。 (i)由式(R为氯,溴,碘,烷基加苯基和R'为烷基,烯丙基基团苯基和(n))所示的烷氧基硅烷(例如四乙氧基硅烷)为0,1,2 加3)在气体例如Ar和H 2的存在下在约800-1,500℃下加热分解,形成大体上> =0.5μm粒度(约28.6-70wt%碳量)的无定形颗粒,其基本上由 二氧化硅和碳。 然后(ii)上述颗粒在非氧化气体气氛中在约1,000-1,700℃下煅烧约0.5-15小时。 N2和NH3等以制造氮化硅细粉末,α相的比例非常大。
    • 7. 发明专利
    • Preparation of hydroxynaphthalene and its derivative
    • 羟基苯甲酸及其衍生物的制备
    • JPS6118740A
    • 1986-01-27
    • JP14014184
    • 1984-07-06
    • Mitsubishi Gas Chem Co Inc
    • NAITOU SUSUMUNAKANORI AIKOSUZUKI TAKASHI
    • C07C37/56C07C27/00C07C39/14C07C67/00
    • PURPOSE: To obtain the titled substance useful as an intermediate for dye, etc. easily in high yield without using complicated process such as sulfonation and alkali melting, etc., by oxidizing naphthaldehyde as a raw material with hydrogen peroxide, etc. in the presence of an organic solvent such as an organic fatty acid, etc.
      CONSTITUTION: A naphthaldehyde shown by the formula (R is H, 1W10C alkyl, or alkoxy; n is 1W4) is oxidized with hydrogen peroxide, or an organic peracid or one of their mixture in the presence of an organic fatty acid or a mixture of the organic fatty acid and an organic fatty acid ester or an aromatic hydrocarbon [preferably an amount of the solvent used is preferably 2W10 times, especially 5W8 times as mush as the raw material compound by weight, and an amount of water content in the solvent is preferably small, and it is ≤20wt% (based on the solvent)], to give the aimed compound. The reaction temperature is 30W150°C, preferably 50W90°C.
      COPYRIGHT: (C)1986,JPO&Japio
    • 目的:在不使用磺化和碱熔等复杂工艺的情况下,通过以二氧化碳等作为原料氧化萘甲醛等,可以容易地高收率地获得用作染料等的中间体的标题物质。 的有机溶剂如有机脂肪酸等。构成:由式(R为H,1-10C烷基或烷氧基; n为1-4)表示的萘醛用过氧化氢或有机过酸 或其有机脂肪酸或有机脂肪酸和有机脂肪酸酯或芳族烃的混合物的混合物中的一种(优选使用的溶剂的量优选为2-10倍,特别是5-8 以原料化合物的重量计,溶剂中的水含量优选较小,为<20重量%(基于溶剂)],得到目标化合物。 反应温度为30-150℃,优选为50-90℃。
    • 8. 发明专利
    • Preparation of olefin
    • 烯烃的制备
    • JPS5759819A
    • 1982-04-10
    • JP13622080
    • 1980-09-30
    • Mitsubishi Gas Chem Co Inc
    • SUZUKI TAKASHIHASHIMOTO SHIYOUICHIROUNAKANO RIAKOTSUJI TOMOJI
    • C07C1/20B01J29/00B01J29/06C07B61/00C07C1/00C07C11/02C07C15/02C07C67/00
    • Y02P20/52Y02P30/42
    • PURPOSE: In preparing an olefin from methanol and/or dimethyl ether, to reduce the amount of a diluent used, to improve rate of reaction and selectivity, to prevent a catalyst from deteriorating, by reducing rate of feed of a raw material per crosssectional area of catalytic layer and per hour.
      CONSTITUTION: Using a catalyst comprising crystalline aluminosilicate zeolite (e.g., FZ-1 zeolite, etc.), olefin is prepared from methanol and/or dimethyl ether by a catalytic reactor of fixed bed. In the reaction, methanol and/or dimethyl ether are fed in amounts in range from 0.3W15g per sec per crosssectional area of catalyst, and the amount of a diluent used is reduced. The heat of reaction produced per crosssectional area of catalytic layer in a direction perpendicular to the direction of the raw material and per hour can be made small. The reduction in the amount of the feed of the diluent can save energy.
      COPYRIGHT: (C)1982,JPO&Japio
    • 目的:在从甲醇和/或二甲醚制备烯烃时,为了减少所用稀释剂的使用量,提高反应速率和选择性,防止催化剂变质,通过降低每个横截面积原料的进料速率 的催化层和每小时。 构成:使用包含结晶硅铝酸盐沸石(例如FZ-1沸石等)的催化剂,通过固定床的催化反应器由甲醇和/或二甲醚制备烯烃。 在该反应中,甲醇和/或二甲醚的供给量为每个催化剂横截面积为0.3-15g / sec,并且所用稀释剂的量减少。 在垂直于原料方向和每小时的方向上,催化剂层的每个横截面产生的反应热可以减小。 稀释剂进料量的减少可以节省能源。
    • 10. 发明专利
    • Preparation of silicon nitride or silicon carbide
    • 硅氮化硅或碳化硅的制备
    • JPS61127606A
    • 1986-06-14
    • JP25012484
    • 1984-11-27
    • Mitsubishi Gas Chem Co Inc
    • SUZUKI TAKASHIKAWAKAMI TAKAMASAKOYAMA GOJIISAKI HIROMASANAKANOSATO AIKO
    • C01B31/36C01B21/068
    • PURPOSE: To obtain easily fine powdery silicon nitride or silicon carbide capable of providing a sintered body having superior high temp. characteristics by heat- treating fine powder obtg. by a gaseous phase reaction of a siloxane compd. with a nonoxidative atmosphere.
      CONSTITUTION: A siloxane compd. [e.g. one expressed by the formula (I) or (II)] contg. no halogen is introduced into a reaction zone of a gaseous phase reaction after gasifying the compd. by heating is accompany with an inert gas (e.g. Ar, He, etc.) when SiC is to be prepd., or in accompany with inert gas contg. NH
      3 when Si
      3 N
      4 is to be prepd. The gaseous phase reaction is caused at 600W1,600°C, then the reaction gas is colled and fine powdery reaction product is collected in a collecting device. Further, the reaction product is heat- treated at 1,350W1,850°C in a nonoxidative atmosphere such as Ar to cause crystallization. Thus, aimed fine powdery Si
      3 N
      4 or SiC is obtd.
      COPYRIGHT: (C)1986,JPO&Japio
    • 目的:为了获得能够提供具有优异高温的烧结体的容易细小的氮化硅粉末或碳化硅。 通过热处理细粉的特点。 通过硅氧烷化合物的气相反应。 具有非氧化气氛。 构成:硅氧烷化合物 [例如。 由式(I)或(II)表示的) 在气化化合物后,没有卤素引入气相反应的反应区。 伴随着惰性气体(例如Ar,He等),当SiC被制备时,伴随着惰性气体, 当要制备Si3N4时,NH3。 在600-1,600℃引起气相反应,然后反应气体被收集,细粉末反应产物收集在收集装置中。 此外,反应产物在诸如Ar的非氧化气氛中在1,350-1,850℃进行热处理以引起结晶。 因此,目标细粉末Si 3 N 4或SiC是可以得到的。