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    • 3. 发明专利
    • LASER PROCESSING
    • JPH1197821A
    • 1999-04-09
    • JP25820697
    • 1997-09-24
    • MITSUBISHI ELECTRIC CORP
    • YUYAMA TAKAYUKIKANEOKA MASARU
    • B23K26/382H05K3/00B23K26/00
    • PROBLEM TO BE SOLVED: To conduct the drilling of a printed board with high quality and good productivity by dividing the number of pulses of laser beam into 'n', successively irradiating the laser beam into each hole in each process and repeating the drilling processes just for only the number corresponding to the number of processes. SOLUTION: A laser beam is made to be irradiated for n1 pulses in accordance with a specified oscillation frequency (n1 pulse irradiating holes 18). In other words, the laser beam is irradiated on all the holes within the area, n1 pulses for each, with one hole at a time. After that, laser beam is irradiated on all the holes beginning with the first hole in the area according to the specified frequency, each of 2n pulses per hole at a time ((n1+n2) pulse laser irradiating holes 20). In such manner, laser beam irradiation is repeated until the final process, wherein laser beam is irradiated with, nn pulses for each. At this time, the total number of pulses irradiated on each hole becomes n1+n2+...nn=N. 'n' represents the number into which the N (the total number of pulses) is divided. In this way, the total number of pulses N is divided by 'n' and process in which several pulses of laser beam is irradiated for each process is repeated.
    • 9. 发明专利
    • SEMICONDUCTOR INTEGRATED-CIRCUIT DEVICE
    • JPH10335567A
    • 1998-12-18
    • JP14212897
    • 1997-05-30
    • MITSUBISHI ELECTRIC CORP
    • MURAKI KENJIYUYAMA TAKAYUKI
    • H01L23/12H01L21/56H01L23/31H01L23/485H01L23/498H01L23/50
    • PROBLEM TO BE SOLVED: To facilitate manufacture and attain downsizing and thinning by providing a conductive layer having an external connection portion and a chip connection portion, and a wiring portion for connecting these connection portions, formed as a single layer, on insulating base material having a specific thermal expansion coefficient. SOLUTION: A plurality of conductive layers 3, each formed as a single layer, are provided on the surface of insulating base material 11 having a thermal expansion coefficient of 4 to 16×10 deg.C , corresponding to a plurality of conductive pads 8 of a semiconductor chip 1. The insulting base material 11 and the conductive layers 3, each comprising an external connection portion, a chip connection portion and a wiring portion, construct an insulating substrate. Then, the semiconductor integrated- circuit device is formed by using an insulating film of fiber-enhanced plastic material as the insulating base material, thus attaining thinning and downsizing. Further, as holes 15 with the external connection portion 4 of the conductive layer 3 as their bottom are provided in the insulating base member 11 to electrically connect the conductive pads 8 and external connection terminals 7 of the semiconductor chip 1, through hole processing or the like with respect to the insulating base material 11 can be omitted.