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1. 发明专利

JP2009027629A Power amplifier 有权
标题翻译：功率放大器
公开(公告)号：JP2009027629A
公开(公告)日：2009-02-05
申请号：JP2007191173
申请日：2007-07-23
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： YAMAMOTO KAZUYA , SUZUKI SATOSHI , ASADA TOMOYUKI , MATSUZUKA TAKAYUKI , SHIMURA TERUYUKI
IPC分类号： H03F1/02 , H03F3/213 , H03F3/24
CPC分类号： H03F1/0277 , H03F1/0261 , H03F1/30 , H03F3/195 , H03F2200/411 , H03F2200/451
摘要： PROBLEM TO BE SOLVED: To provide a power amplifier which improves a rise-up delay of the output power at a changeover from a main power amplifier to an auxiliary power amplifier or vice versa.
SOLUTION: The power amplifier is operated by change-over between a main power amplifier 10 and an auxiliary power amplifier 20 having an idle current smaller than that of the main power amplifier 10. The main power amplifier 10 and the auxiliary power amplifier 20 are formed on a same GaAs chip, and respectively possess pre-stage amplification elements 12, 22 for amplifying an RF signal, post-stage amplification elements 14, 24 for amplifying the output signal of the pre-stage amplification elements 12, 22, pre-stage bias circuits 16, 26 for driving the pre-stage amplification elements 12, 22, and post-stage bias circuits 17, 27 for driving the post-stage amplification elements 14, 24. The spacing between the post-stage amplification element 14 of the main power amplifier and the post-stage amplification element 24 of the auxiliary power amplifier is 100 μm or smaller. The spacing between the post-stage amplification element 14 of the main power amplifier and the post-stage bias circuit 27 of the auxiliary power amplifier is 200 μm or smaller.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种功率放大器，其改善在从主功率放大器切换到辅助功率放大器时的输出功率的上升延迟，反之亦然。解决方案：功率放大器通过在主功率放大器10和具有小于主功率放大器10的空闲电流的辅助功率放大器20之间的转换来操作。主功率放大器10和辅助功率放大器 20分别形成在同一GaAs芯片上，分别具有用于放大RF信号的前置放大元件12,22，用于放大前置放大元件12,22的输出信号的后置放大元件14,24，用于驱动前级放大元件12,22和用于驱动后级放大元件14,24的后级偏置电路17,27的前级偏置电路16,26。后级放大元件辅助功率放大器的主功率放大器14和后级放大元件24的14的值为100μm以下。主功率放大器的后级放大元件14与辅助功率放大器的后级偏置电路27之间的间隔为200μm以下。版权所有（C）2009，JPO＆INPIT

2. 发明专利

JP2003008469A High frequency module 有权
标题翻译：高频模块
公开(公告)号：JP2003008469A
公开(公告)日：2003-01-10
申请号：JP2001188331
申请日：2001-06-21
申请人： Kyocera Corp , Mitsubishi Electric Corp , 三菱電機株式会社 , 京セラ株式会社
发明人： NAKAMATA KATSURO , ISOYAMA SHINJI , SHIMURA TERUYUKI , OKUDA TOSHIO
IPC分类号： H05K1/02 , H01L25/00 , H01P1/15 , H03F3/60 , H04B1/44
CPC分类号： H01L2224/16225 , H01L2224/48091 , H01L2224/48227 , H01L2224/73265 , H01L2924/1305 , H01L2924/3011 , H01L2924/3025 , H01L2924/00014 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a high frequency module that can integrate and downsize circuit components from a branching circuit which branches a plurality of transmission/reception system signals with different pass bands to respective transmission/reception system signals to a power amplifier and has an excellent characteristic. SOLUTION: A layered board comprising a plurality of layered dielectric layers 11-18 of the high frequency module is provided with a branching circuit DIP 10 that branches a plurality of transmission/reception system signals to respective transmission/reception system signals, switch circuits SW 10, 20 that switch each transmission/reception signal into a transmission system TX signal and a reception system RX signal and with power amplifiers AMP 10, 20 comprising high frequency amplification semiconductor elements and matching circuits MAT 10, 20 that amplify transmission signals with pass frequencies of each transmission system TX.
摘要翻译：要解决的问题：提供一种高频模块，其能够将来自分支电路的电路组件的集成和小型化，该分支电路将具有不同通带的多个发送/接收系统信号分散到相应的发送/接收系统信号到功率放大器，并且具有优秀的特点。解决方案：包括高频模块的多层分层电介质层11-18的分层板设置有分支电路DIP10，其将多个发送/接收系统信号分支到相应的发送/接收系统信号，开关电路SW 10 ，20，其将每个发送/接收信号切换成传输系统TX信号和接收系统RX信号，以及包括高频放大半导体元件的功率放大器AMP 10,20和匹配电路MAT 10,20，放大具有通过频率的传输信号每个传输系统TX。

3. 发明专利

JP2005064658A Output overvoltage protection circuit for power amplifier 审中-公开
标题翻译：用于功率放大器的输出过压保护电路
公开(公告)号：JP2005064658A
公开(公告)日：2005-03-10
申请号：JP2003289815
申请日：2003-08-08
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： YAMAMOTO KAZUYA , SHIMURA TERUYUKI , ASADA TOMOYUKI , SUZUKI SATOSHI
IPC分类号： H03F1/52 , H03F3/21
CPC分类号： H03F1/52
摘要： PROBLEM TO BE SOLVED: To solve the problem that a final-stage transistor generates an excessive output for thermal breakdown if load fluctuation occurs in an operation state at an overvoltage power supply.
SOLUTION: An overvoltage output protection circuit 71 for a power amplifier comprises monitor circuits (Trf1-Trf4) which allow a current to flow when an overvoltage output is monitored at an output transistor Tr3 at a final stage of a power amplifier 51, and current mirror circuits (Trm1 and Trm2) that supply a current proportional to the current from the monitor circuit. The output of the output transistor Tr3 at the final stage is suppressed by lowering the base bias of a first-stage transistor Tr1 using the current supplied from the current mirror circuit.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：为了解决在过电压电源的运行状态下发生负载波动的情况下，最终级晶体管产生用于热击穿的过大输出的问题。解决方案：用于功率放大器的过电压输出保护电路71包括监视电路（Trf1-Trf4），当功率放大器51的最后级的输出晶体管Tr3监视过电压输出时允许电流流动，以及电流镜电路（Trm1和Trm2），其提供与来自监视器电路的电流成比例的电流。通过使用从电流镜电路供给的电流来降低第一级晶体管Tr1的基极偏置来抑制最后级的输出晶体管Tr3的输出。版权所有（C）2005，JPO＆NCIPI

4. 发明专利

JP2006295551A High-output amplifier and multistage high-output amplifier 有权
标题翻译：高输出放大器和多级高输出放大器
公开(公告)号：JP2006295551A
公开(公告)日：2006-10-26
申请号：JP2005113588
申请日：2005-04-11
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： SHINJO SHINTARO , MORI KAZUTOMI , SHIMURA TERUYUKI , SUEMATSU KENJI
IPC分类号： H03F3/19
摘要： PROBLEM TO BE SOLVED: To obtain a high-output amplifier being miniaturized and having small loss for the output power.
SOLUTION: The high-output amplifier has a main amplifier 2 amplifying a high-frequency signal input, in response to the base current, the base bias circuit 5 for controlling the base current of the main amplifier 2, in response to a differential current Iset-Ifb and a reference circuit 6 for generating a reference current Iset corresponding to the reference voltage Vset of a reference power supply 7. The high-output amplifier further has a detector 8 detecting the base current of the base bias circuit 5 and generating a feedback current Ifb, where the detecting current is level-adjusted by the reference current of the reference circuit 6 and a current comparison circuit 9 feeds back the differential current Iset-Ifb, level-adjusted by the reference current Iset of the reference circuit 6 and the detector 8, to the base bias circuit 5. Since the base current of the base bias circuit 5, controlling the base current of the main amplifier 2, is detected, the high-output amplifier can be miniaturized, and loss of the output power is reduced without having to use a distributor.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：获得小型化的高输出放大器，并且对输出功率具有小的损耗。解决方案：高输出放大器具有主放大器2，响应于基极电流放大高频信号输入，用于响应于主放大器2控制主放大器2的基极电流的基极偏置电路5 差分电流Iset-Ifb和用于产生与参考电源7的参考电压Vset相对应的参考电流Iset的参考电路6.高输出放大器还具有检测基极偏置电路5的基极电流的检测器8，产生反馈电流Ifb，其中检测电流由参考电路6的参考电流进行电平调整，电流比较电路9反馈由参考电路的参考电流Iset进行电平调整的差动电流Iset-Ifb 6和检测器8连接到基极偏置电路5.由于检测到控制主放大器2的基极电流的基极偏置电路5的基极电流，所以高输出放大器可以小型化和输出功率的损失减少，而不必使用分配器。版权所有（C）2007，JPO＆INPIT

5. 发明专利

JP2011030069A High frequency amplifier 审中-公开
标题翻译：高频放大器
公开(公告)号：JP2011030069A
公开(公告)日：2011-02-10
申请号：JP2009175355
申请日：2009-07-28
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： MORI KAZUTOMI , YAMAUCHI KAZUHISA , MIHO SATOSHI , SHIMURA TERUYUKI , INOUE AKIRA
IPC分类号： H03F3/24 , H03F3/189 , H03F3/68
摘要： PROBLEM TO BE SOLVED: To provide a high frequency amplifier that reduces an influence of load variation in a compact circuit constitution, and also achieves low power consumption and high efficiency during a low output time.
SOLUTION: The high frequency amplifier includes an input distribution and matching circuit 23, first and second amplifying elements 3 and 20, base bias circuits 4 and 21 which apply base bias voltages to the amplifying elements 3 and 20, collector bias circuits 5 and 22 which apply collector bias voltages to the amplifying element 3 and 20, a low-pass filter type matching circuit 6 which matches impedance of an input signal amplified by the first amplifying element 3, a high-pass filter type matching circuit 7 which matches impedance of an input signal amplified by the second amplifying element 20, a node A configured to put together the input signals passed through the matching circuits 6 and 7, and a matching circuit 8 which converts the composite signal to characteristic impedance of an output terminal 2. The input distribution and matching circuit 23 gives a distribution signal the opposite phase difference of a phase difference generated between the matching circuits 6 and 7.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种在紧凑的电路结构中减小负载变动的影响的高频放大器，并且在低输出时间内实现低功耗和高效率。解决方案：高频放大器包括输入分配和匹配电路23，第一和第二放大元件3和20，将基极偏置电压施加到放大元件3和20的基极偏置电路4和21，集电极偏置电路5 和22，其对集成电路偏置电压施加到放大元件3和20;低通滤波器型匹配电路6，匹配由第一放大元件3放大的输入信号的阻抗;匹配的高通滤波器型匹配电路由第二放大元件20放大的输入信号的阻抗，被配置为将通过匹配电路6和7的输入信号组合在一起的节点A以及将复合信号转换为输出端子2的特性阻抗的匹配电路8 输入分配和匹配电路23给出了在匹配电路6和7之间产生的相位差的相反相位差的分布信号 P>版权所有（C）2011，JPO＆INPIT

6. 发明专利

JP2003347870A Power amplifier 审中-公开
标题翻译：功率放大器
公开(公告)号：JP2003347870A
公开(公告)日：2003-12-05
申请号：JP2002148071
申请日：2002-05-22
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： YAMAMOTO KAZUYA , SHIMURA TERUYUKI , ASADA TOMOYUKI , SUZUKI SATOSHI
IPC分类号： H03F3/213 , H03F3/193 , H03G3/12
CPC分类号： H03F3/193
摘要： PROBLEM TO BE SOLVED: To improve a power amplifier, capable of conducting gain switching suitable to GSM (global system for mobile communications)/EDGE (enhanced data rate for GSM evolution) modes, while suppressing the noise power of receiving bands. SOLUTION: An amplifier unit 28 of the power amplifier comprises a first to a third amplifier stage 422, 423 and 425 and a signal transfer unit 58, provided in parallel to the amplifier stage 422. When a control voltage Vmod2 is set to L level, an input signal IN1800 is amplified by the first to the third amplifier stage 422, 423 and 425, and the signal transfer unit 58 does not transfer a signal during this period. When a control voltage Vmod2 is set to H level, the signal transfer unit 58 transfers the input signal IN1800 to a transistor Tr2 via a diode D1. A Vmod1800 is set to L level during this period, and the amplifier stage 422 of the first stage is turned off, and power consumption is reduced. COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：为了改善适用于GSM（全球移动通信系统）/ EDGE（用于GSM演进的增强数据速率）模式的增益切换的功率放大器，同时抑制接收频带的噪声功率。解决方案：功率放大器的放大器单元28包括与放大器级422并联设置的第一至第三放大器级422,423和425以及信号传送单元58.当控制电压Vmod2被设置为 L电平时，输入信号IN1800由第一至第三放大器级422,423和425放大，信号传送单元58在此期间不传输信号。当控制电压Vmod2被设置为H电平时，信号传送单元58经由二极管D1将输入信号IN1800传送到晶体管Tr2。在此期间，Vmod1800设置为L电平，第一级的放大级422被截止，功耗降低。版权所有（C）2004，JPO

7. 发明专利

JP2003008470A High frequency module 审中-公开
标题翻译：高频模块
公开(公告)号：JP2003008470A
公开(公告)日：2003-01-10
申请号：JP2001188332
申请日：2001-06-21
申请人： Kyocera Corp , Mitsubishi Electric Corp , 三菱電機株式会社 , 京セラ株式会社
发明人： NAKAMATA KATSURO , ISOYAMA SHINJI , SHIMURA TERUYUKI , OKUDA TOSHIO
IPC分类号： H01P1/15 , H03F3/60 , H04B1/44
CPC分类号： H01L2224/16225 , H01L2224/48091 , H01L2924/3011 , H01L2924/00014
摘要： PROBLEM TO BE SOLVED: To provide a high frequency module that can integrate and downsize circuit components from a branching circuit, which branches a plurality of transmission reception system signals with different pass bands to respective transmission reception system signals, to a power amplifier and has an excellent characteristic. SOLUTION: A layered board comprising a plurality of layered dielectric layers 11-18 of the high frequency module is provided with a branching circuit DIP 10 that branches a plurality of transmission/reception system signals to respective transmission/reception system signals, switch circuits SW 10, 20 that switch each transmission/reception signal into a transmission system TX signal and a reception system RX signal, with power amplifiers AMP 10, 20 comprising high frequency amplification semiconductor elements and matching circuits MAT 10, 20 that amplify transmission signals with pass frequencies of each transmission system TX and with couplers COP 10, 20 that monitor outputs.
摘要翻译：要解决的问题：提供一种高频模块，其可以将来自分支电路的电路组件的集成和小型化，该分支电路将具有不同通带的多个发送接收系统信号分散到相应的发送接收系统信号，并且具有优秀的特点。解决方案：包括高频模块的多层分层电介质层11-18的分层板设置有分支电路DIP10，其将多个发送/接收系统信号分支到相应的发送/接收系统信号，开关电路SW 10 ，20，其将每个发送/接收信号切换成传输系统TX信号和接收系统RX信号，功率放大器AMP 10,20包括高频放大半导体元件和匹配电路MAT 10,20，其放大具有通过频率的传输信号每个传输系统TX以及监视输出的耦合器COP 10,20。

8. 发明专利

JPH11274381A Heat radiating structure of bypolar transistor device 失效
标题翻译： BYPOLAR晶体管器件的热辐射结构
公开(公告)号：JPH11274381A
公开(公告)日：1999-10-08
申请号：JP7905198
申请日：1998-03-26
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： SHIMURA TERUYUKI , MIURA TAKESHI
IPC分类号： H01L29/73 , H01L21/331 , H01L23/36 , H01L29/737
CPC分类号： H01L2224/34 , H01L2224/376 , H01L2924/00014 , H01L2224/37599 , H01L2924/00012
摘要： PROBLEM TO BE SOLVED: To provide an emitter ballast resistor which provides stable operation and is easily manufactured by providing the emitter ballast resistor on each connecting conductor from each emitter electrode and by forming a heat flow path that reaches a rear face metal layer from the emitter electrode.
SOLUTION: In a current path, each connecting conductor 15 from each emitter electrode 1 to a collected wiring 16 is separately provided from an air bridge conductor 2, an emitter ballast resistor 14 is connected to each connecting conductor 15, and the collected wiring 16 is connected to a grounding pad 17. Then a heat flow path reaches a rear face metal layer 92 from an emitter electrode 11, through an air bridge metal conductor 2, a heat sink 3 and a semi-insulating semiconductor layer 91. Heat is dissipated from the rear face metal layer 92 to the outside of the device. Therefore, each emitter of the respective transistor is grounded through each ballast resistor 14, the emitter current of each unit transistor is stabilized by the ballast resistor 14, and the operation of the transistor is stabilized.
COPYRIGHT: (C)1999,JPO
摘要翻译：要解决的问题：提供一种发射器镇流电阻器，其提供稳定的操作并且通过在每个发射极电极的每个连接导体上设置发射极镇流电阻并且通过形成从发射器到达背面金属层的热流路容易地制造电极。解决方案：在电流通路中，从空气桥导体2分别设置从每个发射极1到集电布线16的每个连接导体15，每个连接导体15连接发射极镇流电阻14，并且收集的布线16 连接到接地垫17.然后热流路通过空气桥金属导体2，散热器3和半绝缘半导体层91从发射电极11到达背面金属层92.热量从背面金属层92到设备的外部。因此，各个晶体管的每个发射极通过每个镇流电阻器14接地，每个单位晶体管的发射极电流由镇流电阻器14稳定，晶体管的工作稳定。

9. 发明专利

JP2960136B2 Semiconductor device and a method of manufacturing the same 失效
公开(公告)号：JP2960136B2
公开(公告)日：1999-10-06
申请号：JP24501190
申请日：1990-09-13
申请人：三菱電機株式会社
发明人： SHIMURA TERUYUKI
IPC分类号： H01L29/73 , H01L21/331 , H01L29/205 , H01L29/737

10. 发明专利

JPH09162194A HETEROJUNCTION BIPOLAR TRANSISTOR 失效
公开(公告)号：JPH09162194A
公开(公告)日：1997-06-20
申请号：JP32035695
申请日：1995-12-08
申请人： MITSUBISHI ELECTRIC CORP
发明人： UNEME YUTAKA , KADOIWA KAORU , HAYAFUJI AKIO , SHIMURA TERUYUKI
IPC分类号： H01L21/331 , H01L29/205 , H01L29/73 , H01L29/737
摘要： PROBLEM TO BE SOLVED: To provide a heterojunction bipolar transistor in which the transistor units can operate uniformly. SOLUTION: The heterojunction bipolar transistor comprises a plurality of transistor units 15, each having an emitter layer 7, a base layer 5 and a collector layer 4, formed between an emitter electrode 34 and a collector electrode 33. In such a heterojunction bipolar transistor, a ballast resistance layer 9 of Alx Ga1-x As (0.5

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