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1. 发明专利

JP2011040674A Wafer grinding apparatus 有权
标题翻译： WAFER GRINDING APPARATUS
公开(公告)号：JP2011040674A
公开(公告)日：2011-02-24
申请号：JP2009189148
申请日：2009-08-18
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： SAKUTANI KAZUHIKO , MATSUOKA TAKASHI , KITANO KATSUHISA , KOJIMA YOSHIKI , SUNAMOTO MASATOSHI
IPC分类号： H01L21/304 , B24B9/00 , B24B57/02
摘要： PROBLEM TO BE SOLVED: To provide a wafer grinding apparatus which does not contaminate the wafer surface with grinding powder when grinding the bevel to eliminate the need of the wafer cleaning process after the grinding.
SOLUTION: To grind the lower half of the bevel of a wafer 2, a rotary grindstone 41 is moved to a position shown by 41a and the rotating grinding face 43 thereof is made to contact the edge face of the wafer 2. By rotating a stage 31 on which the wafer is fixed, the grindstone 41 contacts the entire circumference of the edge face of the wafer 2 to grind the bevel. The rotary grindstone 41 is moved toward the lower surface of the wafer 2 at a constant rate along the bevel while the stage 31 performs one revolution, and this procedure is continued until the rotary grindstone 41 reaches a position 41b shown in the Fig.2. During the grinding, a coolant liquid is injected from a nozzle arranged at an upper position of the wafer to a position of the grindstone just before the grinding position. When the upper half of the bevel is ground, the grinding is performed similarly while the coolant is injected from a nozzle arranged at a lower position of the wafer.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种在研磨斜面时不用研磨粉末污染晶片表面的晶片研磨装置，以消除研磨后晶片清洁过程的需要。解决方案：为了磨削晶片2的斜面的下半部分，旋转磨石41移动到由41a所示的位置，并且其旋转磨削面43与晶片2的边缘面接触。通过旋转其上固定有晶片的台31，磨石41接触晶片2的边缘面的整个圆周以研磨斜面。当台31进行一圈旋转磨石41沿着斜面以恒定的速度移动到晶片2的下表面，并且该过程继续进行，直到旋转砂轮41到达图2所示的位置41b。在研磨期间，将冷却剂液体从布置在晶片的上部位置的喷嘴喷射到刚好在研磨位置之前的磨石的位置。当斜面的上半部磨削时，类似地进行研磨，同时从布置在晶片的下部位置的喷嘴喷射冷却剂。版权所有（C）2011，JPO＆INPIT

2. 发明专利

JP2015053442A 半導体装置有权
标题翻译：半导体器件
公开(公告)号：JP2015053442A
公开(公告)日：2015-03-19
申请号：JP2013186422
申请日：2013-09-09
申请人：三菱電機株式会社 , Mitsubishi Electric Corp
发明人： KAWASHIMA YUJI , SUDO SHINGO , SAKUTANI KAZUHIKO
IPC分类号： H01L23/12 , H01L21/52
CPC分类号： H01L2224/48091 , H01L2224/73265 , H01L2924/13055 , H01L2924/19107 , H01L2924/00014 , H01L2924/00
摘要：【課題】ヒートサイクルに対する信頼性が高い半導体装置を提供する。【解決手段】樹脂系材料から成る絶縁層5と、絶縁層5の表面に形成され、孔部41を有する金属製の配線パターン4と、樹脂系導電性接着剤7によって配線パターン4と電気的に接続された裏面が、孔部41に充填された樹脂系導電性接着剤7によって絶縁層5の表面に接着された半導体素子2と、を備える。樹脂系材料から成る絶縁層5と樹脂系導電性接着剤7との線膨張係数の温度依存性を近くできるため、ヒートサイクル時に接着界面に発生する応力が低くなり、半導体素子2が剥がれにくく、ヒートサイクルに対する信頼性の高い半導体装置が得られる。【選択図】図1
摘要翻译：要解决的问题：提供对于热循环具有高可靠性的半导体器件。解决方案：半导体器件包括：由树脂基材料构成的绝缘层5; 形成在绝缘层5的表面上并具有孔41的金属布线图案4; 以及半导体元件2，其背面通过树脂系导电性粘合剂7与布线图案4电连接，并通过填充在孔41中的树脂系导电性粘合剂7与绝缘层5的表面接合。由于由树脂类材料构成的绝缘层5和树脂系导电性粘合剂7的线膨胀系数的温度依赖性可以近似，所以在热循环中在键合界面产生的应力减小，其中，半导体元件2难以剥离，并且对于热循环具有高可靠性。

3. 发明专利

JP2013247175A Semiconductor device manufacturing method and semiconductor device 审中-公开
标题翻译：半导体器件制造方法和半导体器件
公开(公告)号：JP2013247175A
公开(公告)日：2013-12-09
申请号：JP2012118321
申请日：2012-05-24
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： SAKUTANI KAZUHIKO
IPC分类号： H01L21/301 , H01L21/304
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method which can reduce chipping that occurs in cutting of a wafer and reliably separate the wafer into semiconductor devices.SOLUTION: A semiconductor device manufacturing method comprises: a first cutting step S4 of cutting a semiconductor substrate 1 on which a plurality of device regions 2 are formed by using a first dicing blade 6, from a first principal surface side, to form a groove between the device regions 2; and a second cutting step of cutting the semiconductor substrate 1 from the second principal surface side by using a second dicing blade 16 that has a thickness smaller than that of the first dicing blade 6, until the groove is reached.
摘要翻译：要解决的问题：提供一种半导体器件制造方法，其可以减少切割晶片时发生的切屑，并将晶片可靠地分离成半导体器件。解决方案：半导体器件制造方法包括：切割半导体的第一切割步骤S4 通过使用第一切割刀6从第一主表面侧形成多个器件区域2的衬底1，以在器件区域2之间形成沟槽; 以及第二切割步骤，通过使用厚度小于第一切割刀6的厚度的第二切割刀片16从第二主表面侧切割半导体基板1，直到达到凹槽。

4. 发明专利

JP2011218623A Insert molding apparatus, and insert molding method 审中-公开
标题翻译：插入模具和插入模制方法
公开(公告)号：JP2011218623A
公开(公告)日：2011-11-04
申请号：JP2010088561
申请日：2010-04-07
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： SAKUTANI KAZUHIKO , ARAI NORIYOSHI
IPC分类号： B29C33/14 , B29C45/14
摘要： PROBLEM TO BE SOLVED: To provide a method or an apparatus for molding an insert molded article with a good productivity, a good yield and a reduced cost even when the dimensions of the insert articles are fluctuated.SOLUTION: An insert molding apparatus, including a pair of mold members respectively having cavity forming faces on opposing both faces, and bringing an exposing predetermined part of an insert part stored in a cavity formed by bringing a pair of the mold members into contact with each other into contact with the cavity forming face, is characterized in that the neighborhood of a contact part of the cavity forming face and the exposing predetermined part of the mold members is made into an elastically deformable thin thickness part.
摘要翻译：要解决的问题：即使当插入物品的尺寸波动时，提供一种具有良好的生产率，良好的产量和降低的成本的模制成型件的方法或装置。解决方案：一种插入成型设备，包括一对模具构件，其分别在相对的两个面上具有腔形成面，并且将存储在通过使一对模具构件形成的空腔中的插入部分的暴露预定部分彼此接触地与腔形成面接触，其特征在于，腔形成面的接触部分和模具部件的暴露预定部分的附近被制成可弹性变形的薄壁部分。版权所有（C）2012，JPO＆INPIT

5. 发明专利

JP2012240367A Extrusion molding device 审中-公开
标题翻译：挤出成型设备
公开(公告)号：JP2012240367A
公开(公告)日：2012-12-10
申请号：JP2011114832
申请日：2011-05-23
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： SAKUTANI KAZUHIKO
IPC分类号： B29C47/90 , B29L22/00
摘要： PROBLEM TO BE SOLVED: To provide an extrusion molding device with low maintenance frequency and high productivity, that can mold an extrusion molded product having a hollow part and a rib in the inside with excellent dimension accuracy.SOLUTION: The extrusion molding device includes: an extrusion molding die having an outer die for regulating the outer shape of a resin member and a core for regulating the inner shape of the resin member; an extruder for injecting a melted resin to the extrusion molding die; a magnetic sizing core where a through-hole is opened; a sizing outer die surrounding the sizing core; a support rod whose one end side is inserted to the through-hole of the sizing core, and the other end side is fixed to the core of the extrusion molding die; and a stopper for regulating movement in the axial direction of the support rod of the sizing core. To the sizing outer die, a plurality of magnets and a plurality of electromagnets are fixed, the magnetic force of the electromagnets is adjusted, and the position of the sizing core to the sizing outer die is adjusted.
摘要翻译：要解决的问题：为了提供具有低维护频率和高生产率的挤出成型装置，可以将具有中空部分和内部的肋的挤出成型产品模制成具有优异的尺寸精度。解决方案：挤出成型装置包括：具有用于调节树脂构件的外形的外模和用于调节树脂构件的内部形状的芯的挤出成型模具; 用于将熔融树脂注射到挤出成型模具的挤出机; 磁性筛分芯，其中通孔被打开; 周围定型芯的定型外模; 其一端侧插入尺寸芯的通孔的支撑杆，另一端侧固定在挤压成形模的芯部; 以及用于调节上浆芯的支撑杆的轴向移动的止动件。在尺寸调整外模上，固定有多个磁铁和多个电磁铁，调整电磁铁的磁力，并调整上胶芯到定型外模的位置。版权所有（C）2013，JPO＆INPIT

6. 发明专利

JP2010071103A Ion engine testing device 审中-公开
标题翻译：离子发动机测试装置
公开(公告)号：JP2010071103A
公开(公告)日：2010-04-02
申请号：JP2008236399
申请日：2008-09-16
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： SAKUTANI KAZUHIKO , IDA HIDENORI , NAGAYAMA TAKAHISA , OZAKI TOSHIYUKI
IPC分类号： F03H1/00 , B64G7/00 , G01M15/14
摘要： PROBLEM TO BE SOLVED: To provide an ion engine testing device which is improved in vacuum evacuation speed without enlarging the device and responds to higher output of an ion engine or the like.
SOLUTION: In the ion engine testing device, targets 20-29 formed with incidence surfaces inclined to emission directions of ions 8 are arranged in a cylindrical vacuum vessel 1 at intervals, communication between a first space 3 formed at one side of the vacuum vessel 1 and having the ions 8 from the ion engine 2 discharged therein and a second space 4 formed at another side of the vacuum vessel 1 is made through the interval, and a first cryopanel 5 and a second cryopanel 6 are installed in the first space 3 and the second space 4, respectively.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种离子发动机测试装置，其在不扩大装置并响应离子发动机等的更高输出的情况下提高真空排气速度。解决方案：在离子发动机测试装置中，形成有倾斜于离子8的发射方向的入射表面的目标20-29以间隔布置在圆柱形真空容器1中，在形成在第一空间3的一侧的第一空间3之间连通将离子发动机2的离子8排出并且形成在真空容器1的另一侧的第二空间4形成在真空容器1中，第一冷冻板5和第二冷冻板6安装在第一空间3和第二空间4。版权所有（C）2010，JPO＆INPIT

7. 发明专利

JP2009267192A Manufacturing method for semiconductor device and semiconductor manufacturing device 审中-公开
标题翻译：半导体器件和半导体制造器件的制造方法
公开(公告)号：JP2009267192A
公开(公告)日：2009-11-12
申请号：JP2008116649
申请日：2008-04-28
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： UEDA TOSHIYUKI , TSUNAMI DAISUKE , SAKUTANI KAZUHIKO
IPC分类号： H01L21/205 , C23C16/04
摘要： PROBLEM TO BE SOLVED: To prevent deterioration of the characteristics of a semiconductor device due to vaporization of organic foreign substances adhered on the wafer outer periphery part at the time of forming an epitaxial layer on a wafer by the gas phase epitaxial process, in a manufacturing method for the semiconductor device and a semiconductor manufacturing device.
SOLUTION: The manufacturing method for the semiconductor device includes a thin film forming step of forming a thin film on a wafer, a protection film forming step of forming an adhesion preventive protection film not containing an organic component on the surface and the side surface of the wafer outer periphery part using a resist, a pattern forming step of forming a pattern on the thin film in a region surrounded by the adhesion preventive protection film, a protection film removing step of removing the adhesion preventive protection film after the pattern forming step, and an epitaxial layer forming step of forming an epitaxial layer by the gas phase epitaxial process on the wafer after the protection film removing step.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：解决的问题为了防止在通过气相外延工艺在晶片上形成外延层时附着在晶片外周部分上的有机异物的蒸发导致的半导体器件的特性劣化，在半导体器件和半导体制造器件的制造方法中。解决方案：半导体器件的制造方法包括在晶片上形成薄膜的薄膜形成步骤，在表面和侧面形成不含有机组分的防粘连保护膜的保护膜形成步骤使用抗蚀剂的晶片外周部的表面，在由防粘合保护膜包围的区域中的薄膜上形成图案的图案形成工序;保护膜除去工序，在图案形成后去除粘合防止保护膜以及在保护膜去除步骤之后通过气相外延工艺在晶片上形成外延层的外延层形成步骤。版权所有（C）2010，JPO＆INPIT

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