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1. 发明专利

JP2012117959A Antenna measurement device and antenna measurement method 有权
标题翻译：天线测量装置和天线测量方法
公开(公告)号：JP2012117959A
公开(公告)日：2012-06-21
申请号：JP2010269281
申请日：2010-12-02
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： TAKAHASHI TORU , KIHIRA KAZUNARI , NISHINO TAMOTSU
IPC分类号： G01R29/10 , H01Q3/26
摘要： PROBLEM TO BE SOLVED: To provide an antenna measurement method and an antenna measurement device that can simplify measurement of an elementary electric field of a phased array antenna.SOLUTION: The antenna measurement method includes: a high frequency signal generation step for generating high frequency signals; an amplitude phase change step for changing an amplitude and a phase of the high frequency signal corresponding to an element antenna to be a measurement object by relating the amplitude and the phase to each other, of the high frequency signals generated in the high frequency signal generation step; a high frequency signal radiation step for radiating the high frequency signals including the high frequency signal having the amplitude and the phase changed in the amplitude phase change step from a plurality of element antennas corresponding to the respective high frequency signals; a high frequency signal reception step for receiving the radiated high frequency signals by an antenna for measurement; and an elementary electric field calculation step for calculating the elementary electric field of the element antenna to be the measurement object based on the high frequency signals received in the high frequency signal reception step.
摘要翻译：要解决的问题：提供一种能够简化相控阵天线的基本电场的测量的天线测量方法和天线测量装置。解决方案：天线测量方法包括：高频信号产生步骤，用于产生高频信号; 振幅相位变化步骤，用于通过将振幅和相位彼此相关联地将与作为测量对象的元件天线相对应的高频信号的幅度和相位彼此相关联，以在高频信号生成中产生的高频信号步; 高频信号辐射步骤，用于从对应于各个高频信号的多个元素天线辐射包括在幅度相位变化步长中改变了幅度和相位的高频信号的高频信号; 高频信号接收步骤，用于通过用于测量的天线接收辐射的高频信号; 以及基本电场计算步骤，用于基于在高频信号接收步骤中接收的高频信号来计算作为测量对象的元件天线的基本电场。版权所有（C）2012，JPO＆INPIT

2. 发明专利

JP2012054917A Antenna device 有权
标题翻译：天线设备
公开(公告)号：JP2012054917A
公开(公告)日：2012-03-15
申请号：JP2011170244
申请日：2011-08-03
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： GOTO JUN , TAKAHASHI TORU , NISHINO TAMOTSU
IPC分类号： H01Q21/30 , H01Q13/08
摘要： PROBLEM TO BE SOLVED: To provide an antenna device capable of improving antenna characteristic while operating at two frequency bands close to each other, and being miniaturized than before.SOLUTION: The antenna device 1 includes a ground conductor 5, a flat circle MSA2 provided in non-contact manner to the ground conductor 5, a PSA3 consisting of an annular conductor pattern 30 which includes in non-contact manner the circle MSA2 on the same plane as the circle MSA2, the ground conductor 5, and connection conductors 7a-7d connecting a part of the inner peripheral edge part of the conductor pattern 30 to the ground conductor 5, and a power feeding circuit 6 which supplies a first high frequency signal to the circle MSA2 and supplies a second high frequency signal to the PSA3.
摘要翻译：要解决的问题：提供一种能够在彼此靠近的两个频带上工作时能够改善天线特性并且比以前小型化的天线装置。解决方案：天线装置1包括接地导体5，与接地导体5以非接触方式设置的扁平圆形MSA2，由环形导体图案30组成的PSA3，该环形导体图案30以非接触方式包括圆形MSA2 在与圆形MSA2相同的平面上，接地导体5和将导体图案30的内周边缘部分的一部分连接到接地导体5的连接导体7a-7d，以及馈电电路6，高频信号到圆MSA2，并向PSA3提供第二高频信号。版权所有（C）2012，JPO＆INPIT

3. 发明专利

JP2009065042A High-frequency passive element and method of manufacturing the same 有权
标题翻译：高频被动元件及其制造方法
公开(公告)号：JP2009065042A
公开(公告)日：2009-03-26
申请号：JP2007232862
申请日：2007-09-07
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： RI SHIYAKU , NISHINO TAMOTSU , YOSHIDA YUKIHISA , MIYAZAKI MORIYASU
IPC分类号： H01F17/00 , B81B1/00 , B81C1/00 , H01F41/04 , H01F41/34 , H01L21/822 , H01L27/04
摘要： PROBLEM TO BE SOLVED: To provide a high-frequency passive element which is excellent in characteristics and achieves miniaturization, and to provide a method of manufacturing the same.
SOLUTION: A high-frequency passive element 101 has a substrate 1 wherein a first recess 9 is formed in a major surface, a first winding line conductor 2 which is formed on a bottom surface of the first recess 9 and an upper surface of which is formed approximately parallel to the major surface of the substrate 1, an insulating film 3 which is formed flat on the first winding line conductor 2 and the major surface of the substrate 1 and a second winding line conductor 4 formed on the insulating film 3.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种性能优异且实现小型化的高频无源元件，并提供其制造方法。解决方案：高频无源元件101具有基板1，其中第一凹槽9形成在主表面上，第一绕组线导体2形成在第一凹槽9的底表面上，上表面其形成为大致平行于基板1的主表面，在第一绕组导线2和基板1的主表面上平坦地形成的绝缘膜3和形成在绝缘膜上的第二绕组导线4 3.版权所有（C）2009，JPO＆INPIT

4. 发明专利

JP2008306359A High-pass filter built-in switch, high-pass/low-pass filter switching phase shifter, tunable resonator, pass band variable bandpass filter, and stop band variable band rejection filter 有权
标题翻译：高通滤波器内置开关，高通/低通滤波器开关相位变压器，可调谐谐振器，通带变幅滤波器和停止带可变带防雷滤波器
公开(公告)号：JP2008306359A
公开(公告)日：2008-12-18
申请号：JP2007150351
申请日：2007-06-06
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： KITSUKAWA TAKESUKE , NISHINO TAMOTSU , HANYA MASAKI , MIYAZAKI MORIYASU
IPC分类号： H03H7/12 , B81B3/00 , H03H7/075
摘要： PROBLEM TO BE SOLVED: To provide a high-pass filter built-in switch which includes a cantilever structure switch formed using a MEMS, to process high-frequency signals with low loss. SOLUTION: The high-pass filter built-in switch includes two cantilever structure switches which open/close a movable electrode provided at a free end of a cantilever and a fixed electrode that faces the movable electrode by deforming the cantilever. The cantilever structure switch includes a first input/output terminal which is connected to a high-frequency line where the fixed electrode of one cantilever structure switch is provided, with a support end of a cantilever being connected to GND through a parallel inductor, a second input/output terminal connected to a high-frequency line where the fixed electrode of the other cantilever structure switch is provided, and a serial capacitor which connects the support end of the cantilever on one cantilever structure switch to that of the cantilever of the other cantilever structure switch. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种高通滤波器内置开关，其包括使用MEMS形成的悬臂结构开关，以处理具有低损耗的高频信号。
解决方案：高通滤波器内置开关包括两个悬臂结构开关，其通过使悬臂变形使开放/闭合悬臂悬臂的自由端的可动电极和面对可动电极的固定电极。悬臂结构开关包括连接到设置有一个悬臂结构开关的固定电极的高频线路的第一输入/输出端子，悬臂的支撑端通过并联电感器连接到GND，第二输入/输出端子输入/输出端子连接到提供另一个悬臂结构开关的固定电极的高频线路，以及串联电容器，其将悬臂的支撑端连接到一个悬臂结构开关与另一悬臂梁的悬臂梁的支撑端结构开关版权所有（C）2009，JPO＆INPIT

5. 发明专利

JP2008252612A High-frequency circuit, array antenna apparatus using the same, and integrated circuit 审中-公开
标题翻译：高频电路，使用其的阵列天线装置和集成电路
公开(公告)号：JP2008252612A
公开(公告)日：2008-10-16
申请号：JP2007092298
申请日：2007-03-30
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： NISHINO TAMOTSU , MIYAZAKI MORIYASU , MIYAGUCHI KENICHI , OHASHI HIDEMASA , TAWARA YUKIHIRO , YOSHIDA YUKIHISA , KOJIMA HISATAKA
IPC分类号： H03K17/955 , H01P1/12 , H01P1/18 , H01P5/04 , H03K17/00
摘要： PROBLEM TO BE SOLVED: To determine one state by activating a required switch, in advance, if no activation of the switch is required during operation, and mechanically fixing the switch at the same time, with the state being kept thereafter without the application of a high voltage.
SOLUTION: The high frequency circuit comprises a switch having a spring-like beam 3; a drive electrode 4 for driving the beam 3 of the switch; a switching side high-frequency contact point 5; a high board side high-frequency contact point 6, that is provided to a board to face the switch side high-frequency contact point 5; a high-frequency line which transmits high frequency, when the high frequency contact points 5 and 6 contact by driving with the drive electrode 4; a DC power source 14 for applying a current that is adequate to melt and bond the metal, constituting the high-frequency contact points 5 and 6, inductors 9 and 10 provided between the high-frequency line and the DC power supply 14, and capacitors 7 and 8 that are loaded in series on the high-frequency line.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：为了通过启动所需开关来确定一个状态，如果在操作期间不需要启动开关，并且同时机械地固定开关，则在不保存状态的情况下，应用高电压。解决方案：高频电路包括具有弹簧状光束3的开关; 用于驱动开关的光束3的驱动电极4; 切换侧高频接点5; 设置在板对面开关侧高频接触点5的高板侧高频接点6; 当高频接触点5和6通过驱动电极4驱动而接触时，发送高频的高频线路; 构成设置在高频线路和直流电源14之间的高频接触点5和6，电感器9和10的金属熔融融合电流的DC电源14以及电容器 7和8串联在高频线上。版权所有（C）2009，JPO＆INPIT

6. 发明专利

JP2007221692A Phase-shifting circuit of line length switch type 有权
标题翻译：线长切换类型的相移电路
公开(公告)号：JP2007221692A
公开(公告)日：2007-08-30
申请号：JP2006042718
申请日：2006-02-20
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： NISHINO TAMOTSU , HANYA MASAKI , KIYUUZAKI MORIYASU , SODA SHINNOSUKE , YOSHIDA YUKIHISA
IPC分类号： H01P1/18
摘要： PROBLEM TO BE SOLVED: To adapt a circuit to the frequency of short wavelength by simplifying the circuit for miniaturization.
SOLUTION: The circuit is provided with: a branch part provided respectively on an input side and an output side; two paths formed between the branch parts; and respectively one switches provided in the middle of the respective paths and having two contacts for switching a line length. A difference between electrical lengths between 2 contacts of both of the switches is made to be 360/n° (n is a natural number), and electrical lengths from the branch part on the input side to the contact of the switch in an opened state when one of the switches comes into the opened state are made to be a half wave length of an operating frequency.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：通过简化用于小型化的电路，使电路适应短波长的频率。解决方案：电路设有：分别在输入侧和输出侧设置的分支部分; 在分支部分之间形成两条路径; 并且分别设置在各个路径的中间并具有用于切换线路长度的两个触点的一个开关。两个开关的两个触点之间的电长度之间的差异为360 / n°（n为自然数），并且从开启的输入侧的分支部分到开关的接触的电长度当其中一个开关进入打开状态时，使其成为工作频率的半波长。版权所有（C）2007，JPO＆INPIT

7. 发明专利

JP2006278720A High-frequency semiconductor integrated circuit 有权
标题翻译：高频半导体集成电路
公开(公告)号：JP2006278720A
公开(公告)日：2006-10-12
申请号：JP2005095496
申请日：2005-03-29
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： NAKAJIMA KENSUKE , SUEMATSU KENJI , TSUTSUMI TSUNEJI , NISHINO TAMOTSU , YOSHIDA YUKIHISA
IPC分类号： H01L27/04 , H01L21/822
摘要： PROBLEM TO BE SOLVED: To provide a high-frequency semiconductor integrated circuit which is kept high in high-frequency isolation characteristics and capable of restraining unnecessary connections from being made through an epitaxial layer where vias or pads are formed, even when the pads or through vias are provided on a silicon substrate where the epitaxial layer of low resistivity has been formed.
SOLUTION: The high-frequency semiconductor integrated circuit includes the silicon substrate 1, the epitaxial layer 2 formed on the silicon substrate 1, an oxide film 3 formed on the epitaxial layer 2, the pad 4 formed on the oxide film 3, and a trench 5 which is arranged so as to surround the pad 4 and isolates the epitaxial layer 2 located outside and inside its surrounds.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：解决的问题：为了提供高频隔离特性保持高的能够抑制通过形成通孔或焊盘的外延层进行不必要的连接的高频半导体集成电路，即使在焊盘或通孔设置在已经形成低电阻率的外延层的硅衬底上。解决方案：高频半导体集成电路包括硅衬底1，形成在硅衬底1上的外延层2，形成在外延层2上的氧化膜3，形成在氧化物膜3上的焊盘4，以及沟槽5，其布置成围绕焊盘4并隔离位于其周围的外部和外部的外延层2。版权所有（C）2007，JPO＆INPIT

8. 发明专利

JP2006229871A Antenna device 有权
标题翻译：天线设备
公开(公告)号：JP2006229871A
公开(公告)日：2006-08-31
申请号：JP2005044478
申请日：2005-02-21
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： KOGA YOKO , NISHIZAWA KAZUFUMI , NISHINO TAMOTSU , YOSHIDA YUKIHISA , MIYASHITA HIROAKI , MAKINO SHIGERU
IPC分类号： H01Q13/08
摘要： PROBLEM TO BE SOLVED: To obtain an antenna device which enables an adjustment with a high flexibility by an equivalent relative permittivity, when a plane antenna is produced on a high permittivity board, using micro-machining technology.
SOLUTION: The antenna device is composed of a laminated structure of a first semiconductor board 21 where a patch antenna 23 is patterned on the bottom of a cavity portion, and a second semiconductor board 24, where a whole or a part of a cavity portion opening side including the bottom of the cavity portion, is covered with a conductor 26 which becomes a ground. The first semiconductor board 21 is arranged with the pattered side of the patch antenna 23 directed upward. The second semiconductor board 24 is placed under the first semiconductor board so as to face the opening side of the cavity portion 25 to a side where the patch antenna 23 of the first semiconductor board 21 is not patterned.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：为了获得能够通过等效的相对介电常数进行高灵活性的调整的天线装置，当使用微加工技术在高介电常数板上制造平面天线时。解决方案：天线装置由在空腔部分的底部上构图贴片天线23的第一半导体板21和第二半导体板24的整体或部分的层叠结构构成，包括空腔部分的底部的空腔部分开口侧被形成地面的导体26覆盖。第一半导体板21布置成贴片天线23的图案侧朝向上方。第二半导体板24被放置在第一半导体板的下面，以便面对空腔部分25的开口侧到第一半导体板21的贴片天线23未被图案化的一侧。版权所有（C）2006，JPO＆NCIPI

9. 发明专利

JP2006196974A Antenna system 有权
标题翻译：天线系统
公开(公告)号：JP2006196974A
公开(公告)日：2006-07-27
申请号：JP2005003804
申请日：2005-01-11
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： KOGA YOKO , NISHIZAWA KAZUFUMI , NISHINO TAMOTSU , MIYASHITA HIROAKI , ONO YOSHIKI
IPC分类号： H01Q3/01 , H01Q9/27 , H01Q9/28 , H01Q13/10 , H01Q21/24
摘要： PROBLEM TO BE SOLVED: To provide an antenna system for selecting left-handed rotatory/right-handed rotatory circularly polarized waves or two linearly polarized waves and emitting the selected wave.
SOLUTION: The antenna system is structured such that concentric circular-arc conductors on a plane are halved, open ends of each circular-arc conductor in semi-circular concentric circular-arc conductor groups 11, 12 in pairs wherein the open ends of each circular-arc conductor are arranged opposite to each other, are connected to the open ends of the circular-arc conductors in the other semi-circular concentric circular-arc conductor groups 11, 12 and whose radius is different through a means 13 switching the connection, a feeding point 14 is arranged in the center of the semi-circular concentric circular-arc conductors and respectively connected to the semi-circular concentric circular-arc conductor adjacent to the feeding point 14 via means 15, 16 for switching connections, and the semi-circular concentric circular-arc conductors are connected to form a ring connection clockwise or counterclockwise by using the feeding point 14 as a start point as a whole.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供用于选择左旋旋转/右旋旋转极化波或两个线偏振波并发射所选择的波的天线系统。解决方案：天线系统被构造成使得平面上的同心圆弧导体成对地分开，每对圆弧形导体的半圆形同心圆弧形导体组11,12成对地开放，其中开口端每个圆弧导体彼此相对布置，连接到另一个半圆形同心圆弧导体组11,12中的圆弧导体的开口端，并且半径不同通过装置13切换连接时，馈电点14布置在半圆形同心圆弧形导体的中心，分别通过用于切换连接的装置15,16连接到与馈电点14相邻的半圆形同心圆弧导体，并且半圆形同心圆弧形导体通过使用馈电点14作为起点作为整体而顺时针或逆时针连接形成环形连接。版权所有（C）2006，JPO＆NCIPI

10. 发明专利

JP2002368115A Semiconductor integrated circuit 有权
标题翻译：半导体集成电路
公开(公告)号：JP2002368115A
公开(公告)日：2002-12-20
申请号：JP2001177562
申请日：2001-06-12
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： MAEDA KENICHI , NISHINO TAMOTSU , SUEMATSU KENJI , TAKAGI SUNAO , SHIMOZAWA MITSUHIRO , ITO KENJI , IKUSHIMA TAKAYUKI , KATSURA TAKATOSHI , SADAHIRO KEIICHI
IPC分类号： H01L21/76 , H01L21/822 , H01L27/04
摘要： PROBLEM TO BE SOLVED: To obtain a semiconductor integrated circuit which suppresses unwanted capacitive coupling.
SOLUTION: The semiconductor integrated circuit comprises trench isolations 4a, 4b for separating dielectric layers 1a-1c and doped layers 2a-2c, a first circuit 5 formed on the dielectric layer 1a and the doped layer 2a, a second circuit 6 formed on the dielectric layer 1c and the doped layer 2c, a conductive metal shield 11 disposed between the trench isolations 4a, 4b, a high-frequency ground 12 provided outside the semiconductor integrated circuit and a wire 13 connecting the metal shield 11 to the high-frequency ground 12. The high-frequency grounded metal shield 11 suppresses unwanted capacitive coupling between the first and second circuits 5, 6.
COPYRIGHT: (C)2003,JPO
摘要翻译：要解决的问题：获得抑制不需要的电容耦合的半导体集成电路。解决方案：半导体集成电路包括用于分离电介质层1a-1c和掺杂层2a-2c的沟槽隔离物4a，4b，形成在电介质层1a和掺杂层2a上的第一电路5，形成在电介质层上的第二电路6 层1c和掺杂层2c，设置在沟槽隔离物4a，4b之间的导电金属屏蔽件11，设置在半导体集成电路外部的高频接地12和将金属屏蔽件11连接到高频接地12的导线13 高频接地金属屏蔽11抑制第一和第二电路5,6之间的不需要的电容耦合。

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