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1. 发明专利

JP2011204708A Semiconductor wafer 有权
标题翻译： SEMICONDUCTOR WAFER
公开(公告)号：JP2011204708A
公开(公告)日：2011-10-13
申请号：JP2010067550
申请日：2010-03-24
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： MUKAI KENJI , OTSUKA HIROYUKI
IPC分类号： H01L21/66 , H01L21/822 , H01L27/04
摘要： PROBLEM TO BE SOLVED: To obtain a semiconductor wafer, capable of reducing the number of test pads, and capable of testing each transistor individually in a wafer state.SOLUTION: A plurality of semiconductor devices 2 are arranged in matrix in a semiconductor wafer 1. Dicing lines 3 are provided in order to separate the plurality of semiconductor devices 2. Each semiconductor device 2 includes a plurality of transistors 4. A plurality of test pads 5 (first test pads) are connected individually to the collectors (first terminals) of the plurality of transistors 4. A ground electrode 11 is connected commonly to the emitters (second terminals) of the plurality of transistors 4. A test pad 7 (second test pad) is connected commonly to the bases (control terminals) of the plurality of transistors 4 via wiring 6 which passes through the dicing line 3.
摘要翻译：要解决的问题：获得能够减少测试焊盘数量并能够以晶片状态单独测试每个晶体管的半导体晶片。解决方案：多个半导体器件2以矩阵形式布置在半导体晶片1中。设置切割线3以分离多个半导体器件2.每个半导体器件2包括多个晶体管4.多个测试焊盘5（第一测试焊盘）分别连接到第一半导体器件的集电器（第一端子）多个晶体管4.接地电极11共同连接到多个晶体管4的发射极（第二端子）。测试焊盘7（第二测试焊盘）共同连接到多个晶体管的基极（控制端子） 4通过穿过切割线3的布线6。

2. 发明专利

JP2013106252A Transmission amplifier 审中-公开
标题翻译：传输放大器
公开(公告)号：JP2013106252A
公开(公告)日：2013-05-30
申请号：JP2011249735
申请日：2011-11-15
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： SHINJO SHINTARO , KATO KATSUYA , MUKAI KENJI , HORIGUCHI KENICHI , HIEDA MORISHIGE
IPC分类号： H03F1/26 , H03F3/24 , H04B1/04
摘要： PROBLEM TO BE SOLVED: To provide a low distortion, low noise and compact transmission amplifier.SOLUTION: At least one stage of amplifiers connected in multiple stages comprises an amplifier having a resistance 9 connected between a collector electrode and a base electrode of a bipolar transistor 3, and supplying an input bias from an output power supply 10 to the base electrode of the bipolar transistor 3 via an inductor 8 and the resistance 9. The resistance 9 and the output power supply 10 determine the input bias determining an operating condition of the bipolar transistor 3 to eliminate the superimposition of a distortion by a bias circuit on the bipolar transistor 3, which implements a low noise transmission amplifier. An inductor dedicated to supplying an input bias is dispensed with, which implements a compact transmission amplifier.
摘要翻译：要解决的问题：提供低失真，低噪声和紧凑型发射放大器。解决方案：以多级连接的放大器的至少一级包括具有连接在双极晶体管3的集电极和基极之间的电阻9的放大器，并将输入偏压从输出电源10提供给电阻9和输出电源10确定输入偏压，确定双极型晶体管3的工作状态，以消除由偏置电路引起的失真的叠加双极晶体管3，其实现低噪声发射放大器。专用于提供输入偏置的电感器被省去，其实现了紧凑的发射放大器。版权所有（C）2013，JPO＆INPIT

3. 发明专利

JP2013038772A Nonlinear characteristic analyzer and transmitter 审中-公开
标题翻译：非线性特性分析仪和发射机
公开(公告)号：JP2013038772A
公开(公告)日：2013-02-21
申请号：JP2012145699
申请日：2012-06-28
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： NITTA NAOKO , HORIGUCHI KENICHI , KATO KATSUYA , MUKAI KENJI , HIEDA MORISHIGE , MORI KAZUTOMI
IPC分类号： H04B1/04 , H03F3/24 , H04B17/00
摘要： PROBLEM TO BE SOLVED: To obtain a nonlinear characteristic analyzer which can achieve nonlinear characteristic analysis of a power amplifier with increased accuracy.SOLUTION: Level variable means 3 changes a two-tone signal from two-tone signal generation means 2 to two different average power levels. A two-tone signal which has had part of its signal branched being used an input signal, and the two-tone signal which has been amplified by a power amplifier 1 being used an output signal, nonlinear characteristic calculation means 9 calculates the dynamic nonlinear characteristic of the power amplifier 1 from these input and output signals. Nonlinear characteristic averaging means 10 averages the dynamic nonlinear characteristics calculated by the nonlinear characteristic calculation means 9. Nonlinear characteristic combining means 11 combines the nonlinear characteristics having different average power levels which have been averaged by the nonlinear characteristic averaging means 10 before and outputs the combined characteristic.
摘要翻译：要解决的问题：获得能够以更高精度实现功率放大器的非线性特性分析的非线性特性分析仪。
解决方案：电平变量装置3将双音信号发生装置2的双音信号改变成两个不同的平均功率电平。使用其信号分支的一部分的双音信号用于输入信号，并且由功率放大器1放大的双音信号用作输出信号，非线性特性计算装置9计算动态非线性特性的功率放大器1从这些输入和输出信号。非线性特性平均装置10对由非线性特性计算装置9计算出的动态非线性特性进行平均。非线性特征组合装置11将已经由非线性特性平均装置10进行平均的不同平均功率电平的非线性特性组合在一起，并输出组合特性。版权所有（C）2013，JPO＆INPIT

4. 发明专利

JP2013219724A Power amplifier module 审中-公开
标题翻译：功率放大器模块
公开(公告)号：JP2013219724A
公开(公告)日：2013-10-24
申请号：JP2012091075
申请日：2012-04-12
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： MUKAI KENJI , HORIGUCHI KENICHI , HIEDA MORISHIGE , NITTA NAOKO , KATO KATSUYA
IPC分类号： H03F3/213 , H03F3/24
摘要： PROBLEM TO BE SOLVED: To provide a power amplifier module capable of reducing a chip area formed on a gallium arsenide substrate without degrading high frequency characteristics.SOLUTION: A reference voltage circuit 4, a control circuit 5 and a regulator circuit 6 are formed on a silicon substrate 8, and an amplifier 1 and a bias circuit 7 are formed on a gallium arsenide substrate 9. Thus, a chip area formed on the gallium arsenide substrate 9 can be reduced without degrading high frequency characteristics.
摘要翻译：要解决的问题：提供一种能够减少形成在砷化镓衬底上的芯片面积而不降低高频特性的功率放大器模块。解决方案：基准电压电路4，控制电路5和调节器电路6形成在硅衬底8以及放大器1和偏置电路7形成在砷化镓衬底9上。因此，可以降低在砷化镓衬底9上形成的芯片面积而不降低高频特性。

5. 发明专利

JP2012134627A Power amplifier 有权
标题翻译：功率放大器
公开(公告)号：JP2012134627A
公开(公告)日：2012-07-12
申请号：JP2010283156
申请日：2010-12-20
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： YAMAMOTO KAZUYA , MIYASHITA MIYO , MATSUZUKA TAKAYUKI , MUKAI KENJI
IPC分类号： H03F3/24 , H03G3/10
CPC分类号： H03F3/191 , H03F1/56 , H03F3/193 , H03F2200/15 , H03F2200/18 , H03F2200/211 , H03F2200/222 , H03F2200/318 , H03F2200/387 , H03F2200/411 , H03G1/007
摘要： PROBLEM TO BE SOLVED: To provide a power amplifier with an interstage attenuator which can implement gain switching while suppressing a deterioration in input reflection loss before and after the gain switching, and can implement gain switching while suppressing an increase in phase shift difference before and after the gain switching.SOLUTION: IN, OUT are RF input/output terminals; and Tr1, Tr2 are HBTs (heterojunction bipolar transistors). Fa1, Fa2 are FETs (field effect transistors). Cc1, Cc2 are decoupling capacities; Vc1, Vc2 are collector power terminals of the power stages Tr1, Tr2; Ra1, Ra2, Raa2, Rg1, Rg2 are resistance; Cs1 is an interstage matching capacity; Cp1 is an attenuator parallel capacity; and Vg1, Vg2 are attenuator control terminals. A capacity Ca1 is disposed in series with the resistance Ra1.
摘要翻译：要解决的问题：为了提供具有级间衰减器的功率放大器，其可以在抑制增益切换之前和之后的输入反射损耗的劣化的同时实现增益切换，并且可以在抑制相移差的增加的同时实现增益切换增益切换前后。解决方案：IN，OUT是RF输入/输出端子; Tr1，Tr2是HBT（异质结双极晶体管）。 Fa1，Fa2是FET（场效应晶体管）。 Cc1，Cc2是去耦能力; Vc1，Vc2是功率级Tr1，Tr2的集电极电源端子; Ra1，Ra2，Raa2，Rg1，Rg2为电阻; Cs1是级间匹配能力; Cp1是衰减器并联容量; Vg1，Vg2是衰减器控制端子。电容Ca1与电阻Ra1串联设置。版权所有（C）2012，JPO＆INPIT

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