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1. 发明专利

JP2014112262A Liquid crystal display device 有权
标题翻译：液晶显示装置
公开(公告)号：JP2014112262A
公开(公告)日：2014-06-19
申请号：JP2014051749
申请日：2014-03-14
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： MIYAMOTO KENICHI , HAYASHI MASAMI , TANAHARA MANABU , AOKI OSAMU
IPC分类号： G02F1/1339 , G02F1/1335
摘要： PROBLEM TO BE SOLVED: To provide a liquid crystal display device excellent in display quality.SOLUTION: The liquid crystal display device having a pixel electrode 19 including a transmissive pixel electrode 191 and a reflection pixel electrode 192 comprises: a TFT array substrate 10; a counter substrate 30; a seal material 37 for bonding the substrates to each other; an organic film 18 including a thick film portion formed on the TFT array substrate 10 and provided under the pixel electrode 19 and a thin film portion provided outside the thick film portion; a columnar spacer 35 formed on the counter substrate 30 and maintaining a substrate gap between the TFT array substrate and the counter substrate; and a gap holding pad 20 formed outside a display area 41 and inside the seal material 37, and adjusting the substrate gap outside the display area 41 depending on the substrate gap on the pixel electrode 19. The columnar spacer 35 maintains the substrate gap between the TFT array substrate and the counter substrate, on the gap holding pad 20 and the pixel electrode 19.
摘要翻译：要解决的问题：提供显示质量优异的液晶显示装置。解决方案：具有透射像素电极191和反射像素电极192的像素电极19的液晶显示装置包括：TFT阵列基板10; 对置基板30; 用于将基板彼此粘合的密封材料37; 包括形成在TFT阵列基板10上并设置在像素电极19下方的厚膜部分的有机膜18和设置在厚膜部分外部的薄膜部分; 形成在对置基板30上并保持TFT阵列基板和对置基板之间的基板间隙的柱状间隔件35; 以及形成在显示区域41的外部和密封材料37内部的间隙保持垫20，并且根据像素电极19上的基板间隙调整显示区域41外的基板间隙。柱状间隔件35将基板间隙保持在 TFT阵列基板和对置基板，位于间隙保持垫20和像素电极19上。

2. 发明专利

JP2013135060A Photoelectric conversion device, manufacturing method of the same, and manufacturing method of imaging apparatus using the photoelectric conversion device 有权
标题翻译：光电转换装置及其制造方法以及使用光电转换装置的成像装置的制造方法
公开(公告)号：JP2013135060A
公开(公告)日：2013-07-08
申请号：JP2011283787
申请日：2011-12-26
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： MIYAMOTO KENICHI , HAYASHI MASAMI , NOGUCHI HIDEKI , MURAKAMI TAKESUKE
IPC分类号： H01L27/146 , G01T7/00 , H01L27/144 , H01L31/09 , H04N5/32 , H04N5/367 , H04N5/374
CPC分类号： H01L27/14636 , H01L27/14612 , H01L27/14658 , H01L27/14683 , H01L29/6675
摘要： PROBLEM TO BE SOLVED: To solve the problem in which, when repairing a line defect of an array substrate and changing it into a point defect by a repair using a laser, since there is a case where a PD or a TFT is damaged caused by damage of laser energy and such at repairing, an elemental device which receives damage, even if an initial operation is normal, changes its characteristics from a long term operation, and becomes incapable of correctly correcting, and a generation of a point defect during usage is concerned.SOLUTION: Electrical connections between a switching element and a photodiode, or between a data wiring and the switching element of a pixel where a line defect is repaired are cut off, and the pixel is registered as a defective pixel which is not charged in advance, and an image processing is performed.
摘要翻译：要解决的问题：为了解决在通过使用激光修复而修复阵列基板的线缺陷并将其变为点缺陷的问题的情况下，由于存在PD或TFT损坏的情况，激光能量的损坏等等，即使初始动作正常，接受损伤的元件也能够从长期运转中改变其特性，不能正确地修正，在使用时产生点缺陷是开关元件与光电二极管之间或数据线与修复线缺陷的像素的开关元件之间的电气连接被切断，像素被注册为不带电的缺陷像素进行图像处理。

3. 发明专利

JP2013024970A Method for manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：JP2013024970A
公开(公告)日：2013-02-04
申请号：JP2011157759
申请日：2011-07-19
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： TAKAI KOICHI , ITO YASUYOSHI , HAYASHI MASAMI , ISHIGA NOBUAKI , TODO JUNICHI
IPC分类号： G02F1/1368 , G03F7/20 , H01L21/027 , H01L21/3205 , H01L21/768
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device, by which a region that can be patterned in a predetermined layer formed on a substrate can be maintained to the maximum and a device with high accuracy can be manufactured.SOLUTION: A process of forming a gate wiring line of a TFT substrate is carried out through the following steps (a) and (b). Step (a): a resist pattern 11 for gate wiring is obtained by exposing exposure regions RA1 and RA2 on a predetermined resist by successively using two reticles and then developing the resist. In this step, a pattern 7 for position correction comprising recesses 7a to 7c is also formed in a part of the resist pattern 11 for gate wiring in an overlapping region DA1 of the exposure regions RA1 and RA2. Step (b): a gate wiring line and a capacitor wiring line are obtained by patterning a wiring material of a base by using the resist pattern 11 for gate wiring obtained in Step (a).
摘要翻译：解决的问题：为了提供一种制造半导体器件的方法，通过该方法可以将形成在基板上的预定层中的图案化区域保持在最大程度，并且可以制造高精度的器件。解决方案：通过以下步骤（a）和（b）进行形成TFT基板的栅极布线的工艺。步骤（a）：通过连续地使用两个掩模将曝光区域RA1和RA2暴露在预定的抗蚀剂上，然后显影抗蚀剂，获得用于栅极布线的抗蚀剂图案11。在该步骤中，在曝光区域RA1和RA2的重叠区域DA1中的用于栅极布线的抗蚀剂图案11的一部分中还形成用于包括凹部7a至7c的位置校正用图案7。步骤（b）：通过使用步骤（a）中获得的栅极布线用抗蚀剂图案11，对基材的布线材料进行图案化，得到栅极布线和电容布线。版权所有（C）2013，JPO＆INPIT

4. 发明专利

JP2004362792A Organic electroluminescent display device and its manufacturing method 有权
公开(公告)号：JP2004362792A
公开(公告)日：2004-12-24
申请号：JP2003156349
申请日：2003-06-02
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： YAMAYOSHI ICHIJI , IKENAGA TAKEHIRO , OKUMURA TAKANORI , FUCHIGAMI HIROYUKI , NISHIURA ATSUNORI , HAYASHI MASAMI , ODA KOJI
IPC分类号： H05B33/22 , H01L51/50 , H05B33/10 , H05B33/14
摘要： PROBLEM TO BE SOLVED: To provide an organic EL display device and its manufacturing method capable of preventing an organic EL element from deteriorating due to the infiltration of moisture from a flattened insulating film into an EL layer, causing no problems by forming of an inorganic insulating film at low temperature, and free from complexifying a manufacturing process. SOLUTION: The organic EL display device is provided with an organic insulating film 5 formed on the top side of a base plate 1, an inorganic insulating film 8 formed on a top side of the organic insulating film 5 for moisture blocking, and a pixel separating film 9 formed only on a top side of the inorganic insulating film 8. The top face of the inorganic insulating film 8 has a pixel area in which the EL layer 10 comes in contact with the organic insulating film 5 through a pixel electrode layer 7. The inorganic insulating film 8 is arranged only at a part other than the pixel area out of the top face of the organic insulating film 5. COPYRIGHT: (C)2005,JPO&NCIPI

5. 发明专利

JP2015031714A 薄膜トランジスタアレイ基板およびその製造方法有权
标题翻译：薄膜晶体管阵列基板及其制造方法
公开(公告)号：JP2015031714A
公开(公告)日：2015-02-16
申请号：JP2013158906
申请日：2013-07-31
申请人：三菱電機株式会社 , Mitsubishi Electric Corp
发明人： HAYASHI MASAMI , HASHIGUCHI TAKASHI
IPC分类号： G02F1/1368 , G02F1/1343 , H01L21/28 , H01L21/336 , H01L29/786
CPC分类号： H01L27/1248 , G02F1/13454 , H01L27/12 , H01L27/124 , H01L29/66757 , H01L29/78621
摘要：【課題】平坦化膜を有する構造の薄膜トランジスタアレイ基板において、コンタクトホールの面積増大を抑えながら工程負荷を低減するとともに、安定したコンタクト抵抗を得る。【解決手段】画素電極8は、第2層間絶縁膜12に形成された第1の開口H1と、第1の開口H1の底部を包含し共通電極7に形成された第2の開口H7と、第1の開口H1の底部に包含され第1層間絶縁膜11および第3層間絶縁膜13に形成された第3の開口H4とを介して、TFT10のドレイン電極6に接続する。共通電極7は、第2層間絶縁膜12に形成された第4の開口H2と、第4の開口H2の底部に包含され第1層間絶縁膜11に形成された第5の開口H6とを介して、コンタクト電極72を介して共通配線71に接続する。【選択図】図4
摘要翻译：要解决的问题：为了在抑制接触孔面积的增加的同时降低工艺负荷，并且在具有平坦化膜的结构的薄膜晶体管阵列基板中获得稳定的接触电阻。解决方案：连接像素电极8 通过形成在第二层间绝缘膜12中的第一开口H1和包括第一开口H1的底部并形成在公共电极7中的第二开口H7连接到TFT 10的漏电极6，并且第三开口H4包括在第二开口H1中第一开口H1的底部并形成在第一层间绝缘膜11和第三层间绝缘膜13中。公共电极7通过接触电极72经由形成在第二层间绝缘膜中的第四开口H2连接到公共布线71 膜12和第五开口H6，其包括在第四开口H2的底部并形成在第一层间绝缘膜11中。

6. 发明专利

JP2012099721A Thin film transistor array substrate, and liquid crystal display unit 有权
标题翻译：薄膜晶体管阵列基板和液晶显示单元
公开(公告)号：JP2012099721A
公开(公告)日：2012-05-24
申请号：JP2010247542
申请日：2010-11-04
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： HAYASHI MASAMI , MIYAGAWA OSAMU , TAKEGUCHI TORU , YANO SHINICHI , ITO YASUYOSHI , NAGANO SHINGO
IPC分类号： H01L29/786 , G02F1/1368 , H01L21/3205 , H01L21/768 , H01L23/522
CPC分类号： H01L27/124 , G02F1/13452 , G02F1/136286
摘要： PROBLEM TO BE SOLVED: To obtain a thin film transistor array substrate capable of enhancing the yield or the reliability by preventing or retarding occurrence of the floating of an insulating film formed on the upper layer of a transparent conductive film, and to provide a liquid crystal display unit.SOLUTION: The TFT array substrate 100 comprises a TFT 51, a transparent conductive film pattern 6 formed to directly overlap any one of a source electrode 53, a drain electrode 54, or a metal pattern 5 formed of the same material as the source electrode 53 and the drain electrode 54 on the same layer, and an upper layer insulating film 9 covering a gate insulating film 8 including the transparent conductive film pattern 6. At least the transparent conductive film pattern 6 formed in a frame region 42 is formed so as not to cover the source electrode 53, the drain electrode 54 or the end face of the metal pattern 5.
摘要翻译：解决的问题：为了获得能够通过防止或延迟形成在透明导电膜的上层上的绝缘膜的漂浮的发生而提高成品率或可靠性的薄膜晶体管阵列基板，并且提供液晶显示单元。解决方案：TFT阵列基板100包括TFT51，形成为直接与源极电极53，漏电极54或金属图案5中的任何一个形成的透明导电膜图案6，所述源极电极53，漏电极54或与由源电极53和漏电极54，以及覆盖包括透明导电膜图案6的栅极绝缘膜8的上层绝缘膜9.至少形成在框区域42中的透明导电膜图案6形成以便不覆盖源电极53，漏电极54或金属图案5的端面。版权所有（C）2012，JPO＆INPIT

7. 发明专利

JP2011114310A Photoelectric conversion device, and method of manufacturing the same 有权
标题翻译：光电转换装置及其制造方法
公开(公告)号：JP2011114310A
公开(公告)日：2011-06-09
申请号：JP2009271958
申请日：2009-11-30
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： HAYASHI MASAMI
IPC分类号： H01L27/146 , G01J1/02 , H01J40/06 , H01L27/14 , H01L31/10 , H04N5/335
CPC分类号： H01L27/14692 , H01L27/1461 , H01L27/14612 , H01L27/14663
摘要： PROBLEM TO BE SOLVED: To provide a photoelectric conversion device having high performance, and to provide a method of manufacturing the same. SOLUTION: The photoelectric conversion device includes a thin film transistor 101 formed on a substrate 1 and a photodiode 100 electrically connected with the thin film transistor 101, wherein the photodiode 100 includes a lower electrode 10 connected with a drain electrode 7 of the thin film transistor 101, a photoelectric conversion layer 11 formed on the lower electrode 10, an upper electrode 12 formed on the photoelectric conversion layer 11 with a transparent conductive film and also formed so as to be included in an upper surface of the photoelectric conversion layer 11 when viewed from above, and a protection film (a compound layer 20 etc.) provided so as to protect the upper surface of the photoelectric conversion layer 11 in the portion outside the upper electrode 12. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种具有高性能的光电转换装置，并提供其制造方法。解决方案：光电转换装置包括形成在基板1上的薄膜晶体管101和与薄膜晶体管101电连接的光电二极管100，其中光电二极管100包括与电极10的漏电极7连接的下电极10 薄膜晶体管101，形成在下电极10上的光电转换层11，在透明导电膜上形成于光电转换层11上并形成为包含在光电转换层的上表面中的上电极12 11，以及设置为保护光电转换层11的上表面在上电极12外部的部分的保护膜（复合层20等）。版权所有（C）2011 ，JPO＆INPIT

8. 发明专利

JP2009295908A Photosensor, and method of manufacturing the same 审中-公开
标题翻译：照相机及其制造方法
公开(公告)号：JP2009295908A
公开(公告)日：2009-12-17
申请号：JP2008150399
申请日：2008-06-09
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： HAYASHI MASAMI
IPC分类号： H01L27/146 , H01L21/336 , H01L29/786 , H01L31/10
摘要： PROBLEM TO BE SOLVED: To provide a photosensor that suppresses the leakage current of a photodiode. SOLUTION: The photosensor includes: a first passivation film 41 formed in an upper layer of a thin-film transistor 52; an opening which is provided in the first passivation film 41 and electrically connects a drain electrode 13 with a lower electrode 14; a second passivation film 42 which coats the thin-film transistor 52 and the photodiode 51; upper layer wiring 23 which is formed in an upper layer of the second passivation film 42 and electrically connected with an upper electrode 15 via a contact hole provided in the second passivation film 42; and a connection film 16 formed in an upper layer than the upper electrode 14 so that the upper electrode 14 is not exposed when the contact hole is formed. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供抑制光电二极管的漏电流的光电传感器。光电传感器包括：形成在薄膜晶体管52的上层中的第一钝化膜41; 设置在第一钝化膜41中并将漏电极13与下电极14电连接的开口; 涂覆薄膜晶体管52和光电二极管51的第二钝化膜42; 上层布线23，其形成在第二钝化膜42的上层中，并经由设置在第二钝化膜42中的接触孔与上电极15电连接; 以及形成在比上电极14上的上层中的连接膜16，使得当形成接触孔时上电极14不暴露。版权所有（C）2010，JPO＆INPIT

9. 发明专利

JP2009231399A Photo-sensor array substrate 有权
标题翻译：照片传感器阵列基板
公开(公告)号：JP2009231399A
公开(公告)日：2009-10-08
申请号：JP2008072664
申请日：2008-03-20
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： MORITA HIROMASA , HAYASHI MASAMI , UCHIDA YUSUKE
IPC分类号： H01L27/146 , G01T1/00 , G01T1/20 , G01T1/24 , H01L27/14
摘要： PROBLEM TO BE SOLVED: To solve the problem that a photo-sensor used in an X-ray imaging and display device or the like is formed on a base electrode, however, an amorphous silicon film constituting the photo-sensor is likely peeled off depending on the surface state of the base electrode, particularly, effects of contamination or the like by dry etching when opening contact holes in an insulating film are serious. SOLUTION: A drain electrode 7 is composed of a lower layer 7a and an upper layer 7b. The upper layer 7b is removed after opening a contact hole CH1. Namely, a photodiode 100 is formed on the lower layer 7a. COPYRIGHT: (C)2010,JPO&INPIT

10. 发明专利

JP2009139394A Transflective type liquid crystal display device and its manufacturing method 有权
标题翻译：转移型液晶显示装置及其制造方法
公开(公告)号：JP2009139394A
公开(公告)日：2009-06-25
申请号：JP2007312224
申请日：2007-12-03
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： HAYASHI MASAMI
IPC分类号： G02F1/1368 , G02F1/1335
CPC分类号： G02F1/1339 , G02F1/133371 , G02F1/133555 , G02F1/1345 , G02F2001/133388 , G02F2001/136231 , H01L27/1248 , H01L27/1288
摘要： PROBLEM TO BE SOLVED: To provide a transflective type liquid crystal display device capable of improving reliability without increasing the number of photoengraving processes, and to provide its manufacturing method. SOLUTION: The method of manufacturing the transflective type liquid crystal display device forms an organic film 18 having a film thickness difference on a passivation film 17 covering TFT 50, etches the passivation film 17 to form a contact hole 13, etches a reflection electrode 10b and a transparent electrode 10a on the organic film 18 by using a resist pattern 35 having the film thickness difference, removes a thin film part 35b of the resist pattern 35 by ashing, removes a thin film part 18b of the exposed organic film 18 to form an opening part 18d, etches the reflection electrode 10b by using a resist pattern 35c where the thin film part is removed, and sticks the substrate 3 and a substrate 21 so that a frame-like seal material 31 is arranged in the opening part 18d of the organic film 18. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种能够在不增加光刻工序的情况下提高可靠性的半透射型液晶显示装置，并提供其制造方法。解决方案：半透射型液晶显示装置的制造方法在覆盖TFT 50的钝化膜17上形成具有膜厚差的有机膜18，蚀刻钝化膜17以形成接触孔13，蚀刻反射通过使用具有膜厚差的抗蚀剂图案35在有机膜18上形成电极10b和透明电极10a，通过灰化除去抗蚀剂图案35的薄膜部分35b，去除暴露的有机膜18的薄膜部分18b 为了形成开口部分18d，通过使用除去薄膜部分的抗蚀剂图案35c来蚀刻反射电极10b，并且将基板3和基板21粘贴，使得框状密封材料31布置在开口部分有机薄膜18d。版权所有（C）2009，JPO＆INPIT

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