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1. 发明专利

JP2005294344A Capacitor 有权
标题翻译：电容器
公开(公告)号：JP2005294344A
公开(公告)日：2005-10-20
申请号：JP2004103774
申请日：2004-03-31
申请人： Matsushita Electric Ind Co Ltd , 松下電器産業株式会社
发明人： MIURA TERUHISA , SHIMAMOTO HIDEKI , KAMIOKA KOJI , HARADA YOICHI
IPC分类号： H01G11/66 , H01G2/04 , H01G9/008 , H01G9/06 , H01G9/10 , H01G11/42 , H01G11/74 , H01G11/78 , H01G11/80 , H01G11/82 , H01G9/016 , H01G9/155
摘要： PROBLEM TO BE SOLVED: To provide a capacitor capable of solving the problem that a connection space is increased owing to anode/cathode terminals being led out oppositely to each other when a plurality of capacitors are coupled, and of reducing a connection space with easy connection, and further of reducing unnecessary resistance.
SOLUTION: The opening of a metal case 3 in which a capacitor element 2 is accommodated is sealed with a sealing plate 4 on which anode/cathode terminals 5, 6 are provided, and the anode of the capacitor element 2 is connected to the anode terminal 5 while the cathode of the same is connected to the anode terminal 6 via the metal case 3 and a connection member 8. With this constitution, the anode/cathode can be taken out from the end surface of the capacitor element 2 directly and in the same direction to ensure low resistance and miniaturization owing to a reduction by half of the connection space upon coupling a plurality of the capacitors.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种电容器，其能够解决当多个电容器耦合时由于阳极/阴极端子彼此相反引出的连接空间增加的问题，并且减小连接空间方便连接，进一步减少不必要的阻力。解决方案：容纳有电容器元件2的金属壳体3的开口用设置有阳极/阴极端子5,6的密封板4密封，电容器元件2的阳极连接到阳极端子5同时其阴极经由金属壳体3和连接构件8连接到阳极端子6.利用这种结构，阳极/阴极可以从电容器元件2的端面直接取出并且在相同的方向上，以确保在耦合多个电容器时由于减少一半的连接空间而导致的低电阻和小型化。版权所有（C）2006，JPO＆NCIPI

2. 发明专利

JPH11162786A SOLID ELECTROLYTIC CAPACITOR AND ITS MANUFACTURING METHOD 失效
公开(公告)号：JPH11162786A
公开(公告)日：1999-06-18
申请号：JP32259897
申请日：1997-11-25
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： SHIMADA HIROSHI , HARADA YOICHI , NAKAJIMA HIDEO , UENO MOTONOBU , TERADA MITSUO , KANEMITSU YASUO
IPC分类号： H01G9/012 , H01G9/00 , H01G9/08
摘要： PROBLEM TO BE SOLVED: To efficiently accommodate a large-capacity capacitor element by installing an armor case so that the outer-periphery side surface of the capacitor element on the surface of an anode body can be covered, connecting the cathode layer of the capacitor element to the conductor layer of armor case, and connecting an external cathode terminal to the conductor layer of the armor case. SOLUTION: In a capacitor element 11, an anode-leading wire 12 connects, while separating a penetrating insulator layer 13, an external anode terminal 14 to one edge part of the anode-leading wire 12 in a porous anode body that is obtained by forming and sintering tantalum metal powder being buried so that one edge part of the anode-leading wire 12 consisting of a tantalum wire is exposed. After that, a dielectric oxide layer, a solid electrolyte layer, and a cathode layer 15 are successively formed on the surface of the anode body. Then, a conductor connection layer 16 is filled among the cathode layer 15, an armor case 17, and an external cathode terminal 18 and they are electrically connected. A conductive layer 19 covers one portion of the external anode terminal 14, the insulator layer 13, and the armor case 17.

3. 发明专利

JPH09171945A MANUFACTURE OF ELECTRODE FOIL FOR ALUMINUM ELECTROLYTIC CAPACITOR 失效
公开(公告)号：JPH09171945A
公开(公告)日：1997-06-30
申请号：JP33298195
申请日：1995-12-21
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： HARADA YOICHI , NAKAHARA TAKEHIKO , WATANABE YOSHIHIRO , KOJIMA KOICHI
IPC分类号： C25F3/04 , H01G9/04
摘要： PROBLEM TO BE SOLVED: To obtain the stabilized electrode foil having excellent quality by performing the DC electrolytic etching of an aluminum foil at the front stage, performing the dipping processing of the aluminum foil at the post stage, thereafter performing AC electrolytic etching, and forming the constant initial pit, which becomes the starting point of the AC electrolytic etching at the post stage. SOLUTION: At the front stage, a DC current is made to flow through an aluminum foil in etching liquid, and the DC electrolytic etching of the aluminum foil is performed. Thereafter, the aluminum foil is dipped into the etching liquid, and the dipping processing of the aluminum foil is performed. Then, the current density of the AC electrolytic etching is gradually increased. Thereafter, the etching is performed at the constant current density of about 0.3A/cm . Then, the etched etching foil undergoes formation in the aqueous solution of oxalic acid, and the electrode foil is manufactured. Thus, the electrode foil, wherein electrostatic capacitance is not lowered and the stable quality is provided, can be obtained.

4. 发明专利

JPH0510832B2 失效
公开(公告)号：JPH0510832B2
公开(公告)日：1993-02-10
申请号：JP21671484
申请日：1984-10-16
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： WADA HIROKO , IKEDA KOSUKE , HARADA YOICHI , YOSHIGAMI NOBORU
IPC分类号： H01L31/0264 , H01L31/0296 , H01L31/18

5. 发明专利

JPH02206181A MANUFACTURE OF THIN FILM 失效
公开(公告)号：JPH02206181A
公开(公告)日：1990-08-15
申请号：JP2690489
申请日：1989-02-06
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： HARADA YOICHI , YOSHIGAMI NOBORU
IPC分类号： H01L21/203 , H01L31/0248
摘要： PURPOSE:To enable Cl concentration to be controlled correctly and to facilitate formation of a thin film by performing a sputtering process in an atmosphere principally composed of Ar and additionally containing saturated vapor of S2Cl2 or SOCl2 added thereto through a medium of Ar. CONSTITUTION:When a thin film is formed by a sputtering process using a target principally composed of CdS or CdSe, or solid solution thereof (CdS/CdSe) and additionally containing a trace quantity of Cu and Cl, sputtering gas used for this purpose is gaseous mixture composed of the principal component of Ar and an additive component of Ar containing saturated vapor of S2Cl2 obtained by passing the Ar in S2Cl2 as a liquid Cl compound. Proportions of the components are selected appropriately. According to this method, concentration of Cl can be controlled correctly and formation of the thin film can be facilitated.

6. 发明专利

JPH01149472A THIN FILM TRANSISTOR AND DRIVING METHOD THEREOF 失效
公开(公告)号：JPH01149472A
公开(公告)日：1989-06-12
申请号：JP30788187
申请日：1987-12-04
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： TERAUCHI MASAHARU , NOMURA KOJI , NISHITANI MIKIHIKO , HARADA YOICHI , OGAWA KUNI , YOSHIGAMI NOBORU
IPC分类号： H01L29/78 , H01L27/12 , H01L29/786
摘要： PURPOSE:To obtain a stable thin film transistor small in characteristic change by a method wherein a semiconductor layer which is formed of CdSe having a specified conductivity is provided onto a region of a gate insulating film under which a part or the whole of a gate electrode is contained. CONSTITUTION:An Al layer is formed on a glass substrate through a resistive heating evaporation method to be a gate electrode 2. An Al-Ta-O layer is formed thereon as a gate insulating film 3 through, for example, a sputtering method, and a CdSe layer which has a conductivity of 0.01OMEGA/m or more and is 100nm or so in thickness is provided as a semiconductor layer 4 to a region on a gate insulating film 3 under which a part or the whole of the above gate electrode 2 contained through, for example, a resistive heating evaporation method. Moreover, an Al layer, a polyimide organic insulating film, and, for example, an Al layer are provided thereon as a source and a drain electrode 5, a second insulating film 6, and a fourth electrode 7 respectively. When the above thin film transistor is made to start operating, a direct voltage is applied to the fourth electrode 7 to make a part of the CdSe semiconductor layer a depletion layer on the second insulating film 6 side.

7. 发明专利

JPH01145695A THIN FILM TRANSISTOR CIRCUIT AND DRIVING THEREOF 失效
公开(公告)号：JPH01145695A
公开(公告)日：1989-06-07
申请号：JP30507387
申请日：1987-12-01
申请人： MATSUSHITA ELECTRIC IND CO LTD , MATSUSHITA GRAPHIC COMMUNIC
发明人： TERAUCHI MASAHARU , NOMURA KOJI , NISHITANI MIKIHIKO , HARADA YOICHI , OGAWA KUNI , YOSHIGAMI NOBORU , KUMABE KENJI
IPC分类号： G02F1/136 , G02F1/133 , G02F1/1368 , G09G3/36 , H01L27/12 , H01L27/14 , H01L27/146
摘要： PURPOSE: To enable normal operations for a long time by driving all thin film transistors(TFTs) using a waveform composed of symmetrical positive and negative potentials as a gate voltage. CONSTITUTION: The voltages positive and negative to source terminals are alternately impressed to the gate terminals of TFT Ts1 -Tsn . Therefore, concerning the charges such as carrier or ion caught or moved on a semiconductor, insulator and such a field surface by the positive (or negative) voltage, the carrier is released from a capture level and the ion returns to the original position by the negative (or positive) voltage. Therefore, the fluctuation in the drain currents of the TFT Ts1 -Tsn is reduced. Thus, a driving circuit can be successively normally operated even when its is continuously used for a long time.

8. 发明专利

JPH01140662A MANUFACTURE OF IMAGE SENSOR 失效
公开(公告)号：JPH01140662A
公开(公告)日：1989-06-01
申请号：JP29895987
申请日：1987-11-26
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： HARADA YOICHI , HISAMOTO KAZUE , OGAWA KUNI , YOSHIGAMI NOBORU
IPC分类号： H01L27/146 , H01L27/14
摘要： PURPOSE:To prevent the deterioration of an image sensor in forming process of a driving circuit, by forming a metal protecting film by stacking it on a photosensor, and forming thereon an insulating film. CONSTITUTION:At the time of forming an image sensor, metal protecting films 14, 16 are formed on a photosensor by stacking, and thereon an insulating film 17 is formed. First, the protecting film 14 is formed, by converting a part of the light receiving part and an opposing electrode 13 of the photosensor with photosensitive polyimide. Then Al is deposited, the protecting film 16 is subjected to pattern-forming on the photosensor, and Al2O3 as an insulating film 17 is deposited by sputtering on the photosensor and a gate electrode 15. The deterioration of sensor due to heat, vacuum and plasma at the time of forming the gate insulating film 17 and of etching can be prevented, by forming the Al protecting film 16 on the photosensor.

9. 发明专利

JPH0193172A THIN-FILM TRANSISTOR 失效
公开(公告)号：JPH0193172A
公开(公告)日：1989-04-12
申请号：JP25103687
申请日：1987-10-05
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： NOMURA KOJI , TERAUCHI MASAHARU , NISHITANI MIKIHIKO , HARADA YOICHI , OGAWA KUNI , YOSHIGAMI NOBORU
IPC分类号： H01L29/78 , H01L21/316 , H01L21/336 , H01L27/12 , H01L29/786
摘要： PURPOSE:To build an element capable of withstanding changes due to passage of time by a method wherein a gate insulating film is formed by sputtering in a 0.8-2.0Pa atmosphere for reduction in charged traps and leak currents in the gate insulating film. CONSTITUTION:On an insulating substrate 1 made for example of glass, an approximately 100nm-thick Al gate electrode 2 is built and, covering them, an approximately 300nm-thick Al2O3 gate insulating film 3 is formed by high-frequency magnetron sputtering. Further, on the gate insulating film 3, an approximately 50nm-thick CdSe film 4 is formed by resistance heating, and an approximately 100nm-thick Al-made source electrode 5 and drain electrode 6 are built with a prescribed gap of several to several tens of mums between them. The gate insulating film 3, being formed by spattering in a 0.8-2.0Pa atmosphere, suffers less from changes due to passage of time or is reduced in gate leak currents.

10. 发明专利

JPS645224A THIN FILM TRANSISTOR CIRCUIT AND ITS DRIVE METHOD 失效
公开(公告)号：JPS645224A
公开(公告)日：1989-01-10
申请号：JP16179287
申请日：1987-06-29
申请人： MATSUSHITA ELECTRIC IND CO LTD , MATSUSHITA GRAPHIC COMMUNIC
发明人： TERAUCHI MASAHARU , NOMURA KOJI , NISHITANI MIKIHIKO , HARADA YOICHI , OGAWA KUNI , YOSHIGAMI NOBORU , ISE YUKIHIKO , KUMABE KENJI
IPC分类号： H01L27/146 , H01L27/14 , H03K17/693 , H04N1/028 , H04N5/335 , H04N5/357 , H04N5/374 , H04N5/376
摘要： PURPOSE:To keep the electric characteristic of a thin film transistor (TR) stable for a long time by adopting the constitution such that a positive and a negative voltage are applied alternately to a gate terminal of the thin film TR with respect to the source terminal so as to reduce number of carriers acquired in the gate insulator layer, the semiconductor layer and their boundary. CONSTITUTION:Drains (or sources) of switching thin film TRs Ts1-Tsn are connected to one electrode of N-set of thin film elements S1-Sn to be driven sequentially and the sources (or drains) are connected mutually to form a signal output line. The drains (or sources) of the 1st stage thin film TRs T11-T1n are connected to the other terminal of N-set of load resistors R1-Rn whose one electrode is at a common potential, the sources (drains) of the 1st stage thin film TR of the (2n1-1)th and the 2n1-th order are connected to form the 1st stage output terminal. The drains (or sources) of the K-th stage thin film TRs Tk1-Tkl are connected to the (k-1)-th stage output terminal and the sources (drains) are connected to two adjacent thin film TRs to form the k-th stage output terminal.

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