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    • 2. 发明专利
    • PHOTOCONDUCTIVE DEVICE
    • JPH06291340A
    • 1994-10-18
    • JP7780693
    • 1993-04-05
    • MITSUBISHI PAPER MILLS LTD
    • KAGAMI YOSHIHARUAIDA MASAYUKI
    • G03G5/04G03G5/06H01L51/42H01L31/0344
    • PURPOSE:To provide a visible light region with an absorption wavelength region and to impart a high performance of generating photoelectric charge by forming a bis-azo compound between two electrodes. CONSTITUTION:In a photoconductive device wherein a layer containing photoconductive substance is interposed between two electrodes, a bis-azo compound is one where the distance among atoms which are distant farthest in vertical direction to the plane where the number of atoms is the largest is at least 3 Angstrom . The bis-azo compound contains a coupler component shown by chemical formula. Regarding the formula, SCF calculation of ground state of a molecule is carried out by using the semi-empirical molecular orbit method, PM3 method. By calculation, values of charges for each atom of X is found and this charge value is designated as Y. A value of original charge of each atom is designated as Z. A manufactured photoconductive device is one that is a layer made of a photoconductive substance which contains a bis-azo compound that the total of Z-Y values of the atoms regarding X is at least-0.55. In the formula, X represents hydrocarbon group a heterocyclic group, or the like.
    • 10. 发明专利
    • PHOTOELECTRIC TRANSDUCING ELEMENT
    • JPH03218076A
    • 1991-09-25
    • JP1468090
    • 1990-01-23
    • MITSUBISHI PAPER MILLS LTD
    • KAGAMI YOSHIHARUENDO KAZUCHIKAFURUKAWA AKIRAOMAE MASANORI
    • H01L51/42H01L31/04
    • PURPOSE:To obtain a high photoelectric transducing efficiency with a photoelectric transducing element utilizing a metal-semiconductor junction by coating the semiconductor with the oxide of a transition metal or a phthalocyanine coordinated with the chloride of the transition metal. CONSTITUTION:This photoelectric transducing element is formed by coating the entire exposed surfaces of the first and second electrodes 2 and 3 successively formed on a substrate 1 with an organic film 4 and respectively connecting lead wires 6 and 7 to the third electrode 5 attached onto the film 4 and electrode 3. Of the metal-semiconductor junction forming the element, the semiconductor is constituted of the oxide of a transition metal or a phthalocyanine containing naphthalocyanine, porphyrin, etc., and coordinated with the chloride of the transition metal. Oxotitanium phthalocyanine, oxovanadium phthalocyanine, chloroindium phthalocyanine, etc., can be used as the phthalocyanine and a vapor deposition method is used for forming the semiconductor. The thickness of the semiconductor is set at 200-2,000Angstrom and the substrate 1 is heat-treated at 20-300 deg.C under a vacuum condition after the deposition.