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1. 发明专利

JPH0254769A MANUFACTURE OF THIN SUPERCONDUCTOR FILM 失效
公开(公告)号：JPH0254769A
公开(公告)日：1990-02-23
申请号：JP20584488
申请日：1988-08-18
申请人： MITSUBISHI METAL CORP
发明人： HAGINO SADAAKI , UCHIDA HIROTO , SAKURAI TAKESHI
IPC分类号： H01L39/24 , C01G1/00 , C01G3/00 , C01G29/00 , C04B41/87 , C23C16/30 , H01B12/00 , H01B13/00
摘要： PURPOSE:To manufacture a thin superconductor film improved in critical current density by allowing plural gaseous raw materials to react with each other in a vapor phase under the conditions for accelerating the decomposition of bonding to ligands to form an intermediate film and then oxidizing the above intermediate film. CONSTITUTION:Ligand gases held in ligand vessels 11, 12, 13 are supplied on carrier gas into raw material vessels 1, 2, 3, respectively. Superconductor materials, such as Ba, Y, and Cu, in the raw material vessels 1, 2, 3 are formed into metallic complex gases under the heating conditions by means of heaters 8, respectively, and then supplied into a reaction vessel 5. A chemical reaction is allowed to occur in the reaction vessel 5 and the prescribed superconducting material is deposited on a substrate 9, by which a filmy intermediate is formed. The substrate 9 on which the intermediate film is formed is placed in an annealing furnace, etc., to undergo the oxidation of the intermediate film, by which the thin film of ceramics superconductor which is dense and practically in a chemically equilibrium weight state can be formed.

2. 发明专利

JPH01308808A PRODUCTION OF FILMY SUPERCONDUCTOR 失效
公开(公告)号：JPH01308808A
公开(公告)日：1989-12-13
申请号：JP13974988
申请日：1988-06-06
申请人： MITSUBISHI METAL CORP
发明人： HAGINO SADAAKI , UCHIDA HIROTO , SAKURAI TAKESHI
IPC分类号： C01B13/20 , C01G1/00 , C01G3/00 , C01G29/00 , C23C16/40 , H01B12/06 , H01B13/00 , H01L39/24
摘要： PURPOSE:To obtain the title superconductor through CVD process with enhanced film formation rate, causing no contamination with the carbon in the ligand, by making raw materials into ligand-contg. metal complex gases respectively and carrying out chemical reaction in the presence of both water vapor and oxygen. CONSTITUTION:A vaporized ligand (e.g. hexafluoroacetylacetone) is put into each of containers 11, 12, 13, while plural kinds of raw materials (e.g. Ba compound, Y compound, Cu compound) are pout into respective containers 1, 2, 3. Thence, the ligand in the containers 11, 12, 13 is transferred through a carrier gas (e.g. Ar) to the respective containers 1, 2, 3 followed by heating using respective heaters 8 to convert the raw materials into ligand-contg. metal complex gases, respectively, which are then introduced into a reaction chamber 5. Simultaneously, water vapor-contg. oxygen 10 is also introduced into said chamber 5 followed by heating the resultant mixed gas using a heater 8 to cause reactions, thus forming the objective filmy superconductor on a substrate 9.

3. 发明专利

JPH01153835A DYNAMIC VIBRATION REDUCER USING ZN-AL ALLOY MEMBER 失效
公开(公告)号：JPH01153835A
公开(公告)日：1989-06-16
申请号：JP31162387
申请日：1987-12-09
申请人： MITSUBISHI METAL CORP
发明人： ONO NAOKI , SAKURAI TAKESHI , WATARAI YUSUKE , WADA MASAHIRO , KIMURA TOSHIRO , SUGIURA KENGO
IPC分类号： F16F15/02 , F16F1/02 , F16F15/06
摘要： PURPOSE:To make the captioned dynamic vibration reducer small and light while usable even under a high temperature by forming a vibration reducing body provided on a vibrating body in order to suppress vibration with a Zn-Al alloy having both spring function and damping function. CONSTITUTION:A vibration reducing body 12 is formed with a Zn-Al super plastic alloy (ZM-11, ZM-3, etc.) having a spring function and a damping function. This Zn-Al alloy has a higher heat resistance than that of rubber and a high strength while having a higher vibration reducing property than that of a cast iron, and greatly increases an internal friction value Q under a high temperature. For example, when this vibration reducing body 12 is supported by a fixed member 10 via a vibrating body 11 made of an iron plate and vibrated by means of a vibrating electromagnet 15 and, as the vibrating condition is measured by means of a pickup 17 and a vibrometer 18, it can be detected that a spring function and a damping function are sufficiently obtained. Also, when it is heated at 120 deg.C by means of a heater 14, a logarithmic decrement becomes approx. 5.7 times that at the time of free damping, greatly improving the characteristic under a high temperatures.

4. 发明专利

JPH0258824A CVD APPARATUS 失效
公开(公告)号：JPH0258824A
公开(公告)日：1990-02-28
申请号：JP21096988
申请日：1988-08-24
申请人： MITSUBISHI METAL CORP
发明人： TAKESHITA TAKUO , HAGINO SADAAKI , SAKURAI TAKESHI
IPC分类号： H01L21/205 , H01L21/263 , H01L21/31
摘要： PURPOSE:To increase a film depositing rate, to Iower the reaction heating temperature and to improve the recovery of raw materials by providing within a reaction vessel a susceptor for holding substrates on which a reaction product of the raw gas is to be deposited, and an ultraviolet radiating means for radiating ultraviolet rays along and orthogonally to the flowing direction of the raw gas. CONSTITUTION:Within a reaction vessel 11, a substrate holding face 26 is provided on each of three side faces of a susceptor 25 inclined at the same angle with respect to the flowing direction of raw gas so that a plurality of substrates on which a reaction product of the raw gas is to be deposited are held on these holding faces 26. An ultraviolet ray source 30 is provided near the reaction vessel and ultraviolet rays therefrom are guided via a mirror 31 to a half mirror 32 by which they are divided into two parts. One part of the ultraviolet rays is guided via a mirror 33 to a window 14 from which it enters the reaction vessel along the flowing direction of the gas. The other part of the ultraviolet rays is guided to a group of half mirrors 34 provided corresponding to windows 19, whereby it is divided equally and introduced into the vessel orthogonally fo the axis of the vessel. In this manner, the reaction can be accelerated while the product can be prevented from being reacted again.

5. 发明专利

JPH0254811A MANUFACTURE OF SUPERCONDUCTOR THIN FILM 失效
公开(公告)号：JPH0254811A
公开(公告)日：1990-02-23
申请号：JP20584388
申请日：1988-08-18
申请人： MITSUBISHI METAL CORP
发明人： HAGINO SADAAKI , UCHIDA HIROTO , SAKURAI TAKESHI
IPC分类号： C01G3/00 , C01G1/00 , C01G29/00 , H01B12/06 , H01B13/00
摘要： PURPOSE:To heighten critical current density of a superconductor thin film by making a plurality of raw material gas forming yttrium or bismuth ceramic superconductor to react in a vapor phase for forming an intermediate film followed by oxidizing the intermediate film. CONSTITUTION:Raw material gas of a plurality of raw materials for forming an yttrium ceramic superconductor or a bismuth ceramics superconductor is housed inside the coordinator containers 11, 12 and 13 for being fed to the raw material containers 1, 2 and 3 being carried by Ar as carrier gas. A substrate 9, to which an intermediate film for generating the superconductor is to be stuck, is set up inside a reaction chamber 5. A superconductor raw material inside the raw material containers 1, 2 and 3 is fed inside the reaction chamber 5 decompressed by a vacuum pump 7 under a heating condition by a heater 8 as metal complex gas carried by Ar gas so as to form the intermediate film on the substrate 9. Next, the substrate 9 is set up in an annealing furnace where the intermediate film is oxidized under a prescribed condition. As a result thereof, a dense superconductor thin film is formed thus to enable critical current density to be heightened.

6. 发明专利

JPH01308804A PRODUCTION OF FILMY SUPERCONDUCTOR 失效
公开(公告)号：JPH01308804A
公开(公告)日：1989-12-13
申请号：JP13974588
申请日：1988-06-06
申请人： MITSUBISHI METAL CORP
发明人： HAGINO SADAAKI , UCHIDA HIROTO , SAKURAI TAKESHI
IPC分类号： C04B41/87 , C01B13/20 , C01G1/00 , C01G3/00 , C01G29/00 , C23C16/40 , C23C16/44 , C23C16/448 , H01B12/06 , H01B13/00 , H01L39/24
摘要： PURPOSE:To obtain the title superconductor through CVD process with enhanced film formation rate and improved productivity, by making one of plural raw materials into a ligand-contg. metal complex gas to enhance the vapor pressure of the raw material. CONSTITUTION:A vaporized ligand (e.g. hexafluoroacetylacetone) is put into each of containers 11, 12, 13, while plural kinds of raw materials (e.g. Ba compound, Y compound, Cu compound) are put into respective containers 1, 2, 3. Thence, the ligand in the containers 11, 12, 13 is transferred through a carrier gas (e.g. Ar) to the respective containers 1, 2, 3 followed by heating using respective heaters 8 to convert the raw materials in the containers 1, 2, 3 into ligand- contg. metal complex gases, respectively, which are then introduced into a reaction chamber 5. Simultaneously, oxygen 10 is also introduced into said chamber 5 followed by heating the resultant mixed gas using a heater 8 to cause chemical reaction, thus forming the objective filmy superconductor on a substrate 9.

7. 发明专利

JPH01308802A PRODUCTION OF FILMY SUPERCONDUCTOR AND DEVICE THEREFOR 失效
公开(公告)号：JPH01308802A
公开(公告)日：1989-12-13
申请号：JP13975188
申请日：1988-06-06
申请人： MITSUBISHI METAL CORP
发明人： HAGINO SADAAKI , UCHIDA HIROTO , SAKURAI TAKESHI
IPC分类号： C04B41/87 , C01B13/14 , C01G1/00 , C01G3/00 , C01G29/00 , C23C16/40 , H01B13/00
摘要： PURPOSE:To improve film-forming speed by vaporizing one raw material of superconductor among plural kind of raw materials in the presence of ligand to obtain a gas of metal complex and thus increasing vapor pressure of gas of raw material of superconductor, in production of filmy superconductor by CVD method. CONSTITUTION:Gaseous ligand (e.g., hexafluoroacetylacetone) is contained in ligand vessels 11, 12 and 13 and plural kind of raw materials of superconductor (e.g., Ba-compound, Y-compound and Cu-compound) are contained in raw material vessels 1, 2 and 3. Next, ligands in the ligand vessels 11, 12 and 13 are respectively transferred to the raw material vessels 1, 2 and 3 by carrier gas (e.g., Ar), heated by heater 8 and the raw materials of superconductor in the raw material vessel 1, 2 and 3 are vaporized to gas of metal complex in the presence of ligand, then introduced into a reaction chamber 5 and oxygen 10 is simultaneously introduced into the reaction chamber 5, heated by the heater 8 and chemical reaction is risen to form a filmy superconductor on a base plate 9.

8. 发明专利

JPH01197351A PRODUCTION OF SUPERCONDUCTING CERAMIC SINTERED BODY HAVING HIGH CRITICAL TEMPERATURE AND HIGH TOUGHNESS 失效
公开(公告)号：JPH01197351A
公开(公告)日：1989-08-09
申请号：JP1905388
申请日：1988-01-29
申请人： MITSUBISHI METAL CORP
发明人： TAKESHITA TAKUO , HAGIWARA SADAAKI , SAKURAI TAKESHI , SUGIHARA TADASHI
IPC分类号： H01L39/24 , C01G1/00 , C01G3/00 , C04B35/00 , C04B35/45 , H01B12/00 , H01B13/00
摘要： PURPOSE:To obtain a superconducting ceramic sintered body having high critical temp. and high toughness by incorporating a specified amt. of F into a sintered body forming a solid solution by compounding a specified amt. of a metal fluoride with starting material powder for the production of a Y-Ba-Cu-O type superconducting ceramic. CONSTITUTION:Powder of oxide of a rare earth element including Y (e.g., Y2O3, Er2O3), powder of oxide or carbonate of an alkaline earth metal (e.g., BaO), and powder of copper oxide, are mixed in a specified proportion of a specified composition, and 0.01-0.35wt.% (expressed in terms of amt. of F) powder of metal fluoride (e.g., BaF2, CuF2) is mixed with said mixture. Then, the obtd. powder mixture is converted to superconducting ceramic powder by executing calcination and pulverization each once or repeatedly >=2 times. A molded green compact of the ceramic powder is sintered. The title superconducting ceramic sintered body is obtd. by incorporating thus 0.01-0.3wt.% F into the sintered body.

9. 发明专利

JPH02167852A PRODUCTION OF SUPERCONDUCTIVE CERAMICS 失效
公开(公告)号：JPH02167852A
公开(公告)日：1990-06-28
申请号：JP32451188
申请日：1988-12-22
申请人： MITSUBISHI METAL CORP
发明人： HAGINO SADAAKI , SAKURAI TAKESHI
IPC分类号： C04B35/00 , C01G1/00 , C01G15/00 , C04B35/45 , H01B12/00
摘要： PURPOSE:To efficiently add Tl and simultaneously readily recover unreacted Tl by heating a sintered ceramics containing excess BaO in a gaseous thallium halide and substituting Ba with Tl. CONSTITUTION:A sintered ceramics containing excess BaO is ground into pieces and the obtained particles with 1-5mum particle size are blended with a binder (e.g. turpentine oil). The resultant mixture is coated on a substrate 3 and the binder is then removed by heating to form a sintered ceramics film 4. The sintered ceramics film 4 formed on the substrate 3 is then put into a reaction furnace 2 equipped with a heater 1 and heated at >=800 deg.C while feeding a gaseous thallium halide (e.g. TlF3) into the furnace 2 and Tl2O3 is added into the film 4 by substituting the excess Ba in the film 4 with Tl. BaF2 generated in the furnace 2 and unreacted gaseous thallium halide are then introduced into a recovery furnace 5 accommodating BaO and heated at >=800 deg.C using a heater 6 to recover the gaseous thallium halide and exhaust BaF2.

10. 发明专利

JPH01308807A PRODUCTION OF FILMY SUPERCONDUCTOR 失效
公开(公告)号：JPH01308807A
公开(公告)日：1989-12-13
申请号：JP13974888
申请日：1988-06-06
申请人： MITSUBISHI METAL CORP
发明人： HAGINO SADAAKI , UCHIDA HIROTO , SAKURAI TAKESHI
IPC分类号： C04B41/87 , C01B13/20 , C01G1/00 , C01G3/00 , C01G29/00 , C23C16/40
摘要： PURPOSE:To obtain the title superconductor through CVD process with enhanced film formation rate and reduced reaction temperature, applicable to ICs, by making raw materials into respective metal complex gases and also carrying the reaction under ultraviolet irradiation. CONSTITUTION:A vaporized ligand (e.g. hexafluoroacetylacetone) is put into each of containers 11, 12, 13, while plural kinds of raw materials (e.g. Ba compound, Y compound, Cu compound) are put into respective containers 1, 2, 3. Thence, the ligand in each of the containers 11, 12, 13 is transferred through a carrier gas (e.g. Ar) to the respective containers 1, 2, 3 followed by heating using respective heaters 8 to convert the raw materials in the containers 1, 2, 3 into ligand-contg. metal complex gases, respectively, which are then introduced into a reaction chamber 5. Simultaneously, oxygen 10 is also introduced into the chamber 5 followed by heating the resultant mixed gas using a heater 8 under ultraviolet 15 irradiation to cause chemical reactions, thus forming the objective filmy superconductor on a substrate 9.

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