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    • 5. 发明专利
    • Processed high-purity copper material having uniform and fine crystalline structure, and process for production thereof
    • 具有均匀性和细小结晶结构的加工高纯度铜材料及其生产工艺
    • JP2011184711A
    • 2011-09-22
    • JP2010048516
    • 2010-03-05
    • Mitsubishi Materials Corp三菱マテリアル株式会社
    • KUMAGAI TSUTOMUKOIDE MASATO
    • C22F1/08B21B3/00B22D21/00C22F1/00C23C14/34
    • C22F1/08B21B2003/005C23C14/165C23C14/3414
    • PROBLEM TO BE SOLVED: To provide a processed high-purity copper material which has a uniform and fine crystal structure, and is suitable for use as a sputtering target.
      SOLUTION: A mass of a cast comprising high purity copper having a Cu purity of ≥99.9999 wt.% is hot-forged at ≥550°C, is thereafter rapidly water-cooled, is next warm-forged at the initial temperature of ≥350°C, is subsequently rapidly cooled with water, is then subjected to cold cross rolling at the total draft of ≥50%, and is then subjected to stress relieving annealing at ≥200°C so as to be a processed high-purity copper material having a uniform and fine crystal structure in which the average crystal particle diameter is ≤20 μm, and also, when the particle diameter distribution is measured for the individual crystal particles, the ratio of an area occupied by the crystal particles with particle diameter exceeding 2.5 times the average crystal particle diameter is
    • 要解决的问题:提供具有均匀和精细晶体结构并且适合用作溅射靶的经加工的高纯度铜材料。 解决方案:将包含Cu纯度≥99.9999重量%的高纯度铜的铸件块在≥550℃下热锻,然后快速水冷,接着在初始温度下加热锻造 ≥350℃,随后用水快速冷却,然后以≥50%的总吃水进行冷交叉轧制,然后在≥200℃下进行应力消除退火, 具有平均结晶粒径≤20μm的均匀且微细的晶体结构的纯度高的铜材料,并且当对于各个晶体粒子测量粒径分布时,晶体颗粒占据的面积与颗粒的比例 超过平均结晶粒径的2.5倍的直径小于所有结晶粒子所占的总面积的10%。 版权所有(C)2011,JPO&INPIT
    • 7. 发明专利
    • Copper grains for plating
    • 铜粉粒
    • JP2014173179A
    • 2014-09-22
    • JP2013049624
    • 2013-03-12
    • Mitsubishi Materials Corp三菱マテリアル株式会社
    • AKIYAMA YOSHIYUKIKOIDE MASATOCHO TOSHIYUKI
    • C25D17/10
    • PROBLEM TO BE SOLVED: To provide copper grains for plating capable of efficiently feeding copper ions into a plating solution consisting of a sulfuric acid solution, etc. without entailing a grave deterioration of the dissolution rate even in a case where the dissolution thereof has advanced.SOLUTION: The provided copper grains 10 for plating are used on an occasion for feeding copper ions into a plating solution, whereas particle diameters D thereof are confined to a range of 0.5 mm or above and 6.0 mm or below, whereas the interior of each includes pores 11 constituting a plurality of fine closed spaces, whereas the apparent density thereof is set within a range of 7.0 g/mL or above and 8.5 g/mL or below.
    • 要解决的问题:为了提供能够将铜离子有效地供给到由硫酸溶液等构成的电镀液中的电镀用铜粒子,即使在溶解速度提高的情况下也不会引起溶解速度的严重劣化。 解决方案:所提供的用于电镀的铜颗粒10用于将铜离子供给到电镀液中的情况下,而其粒径D被限制在0.5mm以上且6.0mm以下的范围,而各自的内部包括 孔11构成多个精细封闭空间,而其表观密度设定在7.0g / mL以上且8.5g / mL以下的范围内。